KR100830361B1 - 능동 바이어스 회로 - Google Patents

능동 바이어스 회로 Download PDF

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Publication number
KR100830361B1
KR100830361B1 KR1020047001462A KR20047001462A KR100830361B1 KR 100830361 B1 KR100830361 B1 KR 100830361B1 KR 1020047001462 A KR1020047001462 A KR 1020047001462A KR 20047001462 A KR20047001462 A KR 20047001462A KR 100830361 B1 KR100830361 B1 KR 100830361B1
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KR
South Korea
Prior art keywords
transistor
circuit
current mirror
source
reference voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020047001462A
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English (en)
Korean (ko)
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KR20040028963A (ko
Inventor
처밍 데이비드 쉬
Original Assignee
프리스케일 세미컨덕터, 인크.
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Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20040028963A publication Critical patent/KR20040028963A/ko
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
KR1020047001462A 2001-07-30 2002-06-26 능동 바이어스 회로 Expired - Fee Related KR100830361B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/918,015 US6492874B1 (en) 2001-07-30 2001-07-30 Active bias circuit
US09/918,015 2001-07-30
PCT/US2002/020309 WO2003012980A1 (en) 2001-07-30 2002-06-26 Active bias circuit

Publications (2)

Publication Number Publication Date
KR20040028963A KR20040028963A (ko) 2004-04-03
KR100830361B1 true KR100830361B1 (ko) 2008-05-20

Family

ID=25439654

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047001462A Expired - Fee Related KR100830361B1 (ko) 2001-07-30 2002-06-26 능동 바이어스 회로

Country Status (5)

Country Link
US (1) US6492874B1 (cg-RX-API-DMAC7.html)
JP (1) JP4087336B2 (cg-RX-API-DMAC7.html)
KR (1) KR100830361B1 (cg-RX-API-DMAC7.html)
CN (1) CN100502230C (cg-RX-API-DMAC7.html)
WO (1) WO2003012980A1 (cg-RX-API-DMAC7.html)

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US6864748B2 (en) * 2003-01-31 2005-03-08 Lsi Logic Corporation Differential current amplifier with common mode rejection and high frequency boost
JP2004274433A (ja) * 2003-03-10 2004-09-30 Mitsubishi Electric Corp 高周波集積回路装置
US6946912B2 (en) * 2003-10-21 2005-09-20 Northrop Grumman Corporation MMIC distributed amplifier gate control using active bias
US6956437B2 (en) * 2003-12-23 2005-10-18 Agere Systems Inc. Metal-oxide-semiconductor device having integrated bias circuit
JP4569165B2 (ja) * 2004-05-13 2010-10-27 ソニー株式会社 バイアス回路およびこれを有する増幅回路ならびに通信装置
US7057462B2 (en) * 2004-05-28 2006-06-06 Freescale Semiconductor, Inc. Temperature compensated on-chip bias circuit for linear RF HBT power amplifiers
KR100605258B1 (ko) * 2005-02-28 2006-07-31 삼성전자주식회사 초 저전력 소모 특성을 갖는 기준전압 발생회로
TW200637139A (en) * 2005-04-06 2006-10-16 Richwave Technology Corp Adaptive linear biasing circuit
US20070030064A1 (en) * 2005-08-03 2007-02-08 Yinglei Yu Integrated laterally diffused metal oxide semiconductor power detector
US7274258B2 (en) * 2005-09-08 2007-09-25 Industrial Technology Research Institute Dynamic bias circuit for a radio-frequency amplifier
US10367049B2 (en) 2005-11-04 2019-07-30 Interdigital Ce Patent Holdings Electro-optical element integrating an organic electroluminescent diode and an organic transistor for modulating said diode
US7365604B2 (en) * 2005-12-16 2008-04-29 Mediatek Inc. RF amplifier with a bias boosting scheme
US8270917B2 (en) * 2006-04-24 2012-09-18 Icera Canada ULC Current controlled biasing for current-steering based RF variable gain amplifiers
JP2007329831A (ja) * 2006-06-09 2007-12-20 Matsushita Electric Ind Co Ltd 増幅回路
US7446612B2 (en) * 2006-09-08 2008-11-04 Skyworks Solutions, Inc. Amplifier feedback and bias configuration
US7869775B2 (en) 2006-10-30 2011-01-11 Skyworks Solutions, Inc. Circuit and method for biasing a gallium arsenide (GaAs) power amplifier
US8093952B2 (en) * 2006-12-29 2012-01-10 Broadcom Corporation Method and system for precise current matching in deep sub-micron technology
JP4271708B2 (ja) * 2007-02-01 2009-06-03 シャープ株式会社 電力増幅器、およびそれを備えた多段増幅回路
WO2009004534A1 (en) * 2007-07-03 2009-01-08 Nxp B.V. Electronic device and a method of biasing a mos transistor in an integrated circuit
JP2009165100A (ja) * 2007-12-11 2009-07-23 Hitachi Metals Ltd 高周波増幅器及び高周波モジュール並びにそれらを用いた移動体無線機
JP5107272B2 (ja) * 2009-01-15 2012-12-26 株式会社東芝 温度補償回路
US8710812B1 (en) * 2009-01-27 2014-04-29 Xilinx, Inc. Regulating a supply voltage provided to a load circuit
US9166533B2 (en) * 2009-07-30 2015-10-20 Qualcomm Incorporated Bias current monitor and control mechanism for amplifiers
CN102006017B (zh) * 2010-12-02 2013-11-06 无锡中普微电子有限公司 偏置电路及其功率放大电路
CN102638230B (zh) * 2011-02-10 2015-08-05 启碁科技股份有限公司 温度补偿装置及卫星信号接收系统
US8665015B1 (en) * 2012-08-17 2014-03-04 Cambridge Silicon Radio Limited Power amplifier circuit
JP6043599B2 (ja) * 2012-11-15 2016-12-14 サムソン エレクトロ−メカニックス カンパニーリミテッド． バイアス回路、および増幅装置
JP5821876B2 (ja) * 2013-03-05 2015-11-24 株式会社村田製作所 電力増幅モジュール
EP2779452B1 (en) * 2013-03-13 2018-08-15 Nxp B.V. Switchable current source circuit and method
EP2922199B1 (en) * 2014-03-17 2020-05-13 Nxp B.V. A bias circuit for a transistor amplifier
US9780736B1 (en) * 2016-03-30 2017-10-03 Synaptics Incorporated Temperature compensated offset cancellation for high-speed amplifiers
US10224918B2 (en) * 2016-12-07 2019-03-05 Infineon Technologies Americas Corp. Active gate bias driver
EP4296824B1 (en) * 2018-08-13 2025-12-17 Avago Technologies International Sales Pte. Limited System and method for controlling the impact of process and temperature in passive signal detector for automotive ethernet
US10615893B1 (en) * 2018-09-27 2020-04-07 Intel Corporation Transmitter with feedback control
KR102262903B1 (ko) 2019-04-18 2021-06-09 삼성전기주식회사 듀얼 보상 기능을 갖는 바이어스 회로 및 증폭 장치
CN115699568B (zh) * 2020-06-11 2025-11-18 株式会社索思未来 放大电路、差动放大电路、接收电路以及半导体集成电路
EP4020798A1 (en) 2020-12-23 2022-06-29 Carrier Corporation Oscillator circuit comprising surface integrated waveguide resonator

Citations (1)

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Publication number Priority date Publication date Assignee Title
US5990727A (en) 1995-05-26 1999-11-23 Nec Corporation Current reference circuit having both a PTAT subcircuit and an inverse PTAT subcircuit

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US4220930A (en) 1978-12-26 1980-09-02 Rca Corporation Quasi-linear amplifier with feedback-controlled idling currents
US4789842A (en) 1987-11-23 1988-12-06 Jiri Naxera Composite transistor device with over-current protection
FR2623951B1 (fr) * 1987-11-27 1990-03-09 Thomson Hybrides Microondes Amplificateur lineaire hyperfrequence a tres large bande passante
US4975632A (en) 1989-03-29 1990-12-04 Texas Instruments Incorporated Stable bias current source
US5469111A (en) 1994-08-24 1995-11-21 National Semiconductor Corporation Circuit for generating a process variation insensitive reference bias current
US5570065A (en) 1994-08-26 1996-10-29 Motorola, Inc. Active bias for radio frequency power amplifier
US5608353A (en) 1995-03-29 1997-03-04 Rf Micro Devices, Inc. HBT power amplifier
US5689211A (en) 1996-02-14 1997-11-18 Lucent Technologies Inc. Quiescent current control for the output stage of an amplifier
US5724004A (en) * 1996-06-13 1998-03-03 Motorola, Inc. Voltage bias and temperature compensation circuit for radio frequency power amplifier
US5986508A (en) 1996-08-26 1999-11-16 Nevin; Larry J. Bias concept for intrinsic gain stabilization over temperature
US5854578A (en) 1997-09-15 1998-12-29 Motorola, Inc. Active circuit having a temperature stable bias
US5949274A (en) 1997-09-22 1999-09-07 Atmel Corporation High impedance bias circuit for AC signal amplifiers
JP4158214B2 (ja) 1997-10-31 2008-10-01 沖電気工業株式会社 半導体集積回路
KR100272508B1 (ko) 1997-12-12 2000-11-15 김영환 내부전압(vdd) 발생회로
FI105611B (fi) 1998-03-13 2000-09-15 Nokia Mobile Phones Ltd Radiotajuusvahvistimet
US6091279A (en) 1998-04-13 2000-07-18 Lucent Technologies, Inc. Temperature compensation of LDMOS devices
US6046642A (en) 1998-09-08 2000-04-04 Motorola, Inc. Amplifier with active bias compensation and method for adjusting quiescent current
US6087820A (en) 1999-03-09 2000-07-11 Siemens Aktiengesellschaft Current source
IT1313384B1 (it) * 1999-04-28 2002-07-23 St Microelectronics Srl Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut
US6313705B1 (en) * 1999-12-20 2001-11-06 Rf Micro Devices, Inc. Bias network for high efficiency RF linear power amplifier
US6300837B1 (en) * 2000-03-28 2001-10-09 Philips Electronics North America Corporation Dynamic bias boosting circuit for a power amplifier
US6259324B1 (en) 2000-06-23 2001-07-10 International Business Machines Corporation Active bias network circuit for radio frequency amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5990727A (en) 1995-05-26 1999-11-23 Nec Corporation Current reference circuit having both a PTAT subcircuit and an inverse PTAT subcircuit

Also Published As

Publication number Publication date
CN100502230C (zh) 2009-06-17
CN1537358A (zh) 2004-10-13
JP4087336B2 (ja) 2008-05-21
WO2003012980A1 (en) 2003-02-13
KR20040028963A (ko) 2004-04-03
US6492874B1 (en) 2002-12-10
JP2005526412A (ja) 2005-09-02

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