KR100826732B1 - 면발광형 반도체 레이저 - Google Patents

면발광형 반도체 레이저 Download PDF

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Publication number
KR100826732B1
KR100826732B1 KR1020070063029A KR20070063029A KR100826732B1 KR 100826732 B1 KR100826732 B1 KR 100826732B1 KR 1020070063029 A KR1020070063029 A KR 1020070063029A KR 20070063029 A KR20070063029 A KR 20070063029A KR 100826732 B1 KR100826732 B1 KR 100826732B1
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KR
South Korea
Prior art keywords
refractive index
layer
semiconductor laser
mirror
multilayer film
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KR1020070063029A
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English (en)
Korean (ko)
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KR20080000530A (ko
Inventor
마사미쯔 모찌즈끼
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세이코 엡슨 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1020070063029A 2006-06-27 2007-06-26 면발광형 반도체 레이저 Expired - Fee Related KR100826732B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00176372 2006-06-27
JP2006176372 2006-06-27
JP2007080820A JP4985954B2 (ja) 2006-06-27 2007-03-27 面発光型半導体レーザ
JPJP-P-2007-00080820 2007-03-27

Publications (2)

Publication Number Publication Date
KR20080000530A KR20080000530A (ko) 2008-01-02
KR100826732B1 true KR100826732B1 (ko) 2008-04-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070063029A Expired - Fee Related KR100826732B1 (ko) 2006-06-27 2007-06-26 면발광형 반도체 레이저

Country Status (6)

Country Link
US (1) US7424043B2 (enExample)
EP (1) EP1873878B1 (enExample)
JP (1) JP4985954B2 (enExample)
KR (1) KR100826732B1 (enExample)
DE (1) DE602007000751D1 (enExample)
TW (1) TW200805844A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100536266C (zh) * 2006-06-27 2009-09-02 精工爱普生株式会社 面发光型半导体激光器
KR101292390B1 (ko) * 2008-05-02 2013-08-01 가부시키가이샤 리코 수직 공진기형 면발광 레이저 소자, 수직 공진기형 면발광 레이저 어레이, 광 주사 장치 및 화상 형성 장치
JP5262293B2 (ja) * 2008-05-26 2013-08-14 三菱電機株式会社 光半導体装置
JP2010251458A (ja) * 2009-04-14 2010-11-04 Sony Corp 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法
JP5444994B2 (ja) * 2009-09-25 2014-03-19 三菱電機株式会社 半導体受光素子
KR101725342B1 (ko) 2009-10-12 2017-04-11 삼성디스플레이 주식회사 광배향용 마스크, 이를 이용한 광배향 방법 및 액정 표시 장치
JP2017045802A (ja) * 2015-08-25 2017-03-02 キヤノン株式会社 光伝導素子
WO2019171864A1 (ja) 2018-03-06 2019-09-12 ソニー株式会社 発光素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040100962A (ko) * 2003-05-19 2004-12-02 소니 가부시끼 가이샤 면발광형 반도체 레이저소자
KR20060048158A (ko) * 2004-06-04 2006-05-18 소니 가부시끼 가이샤 면 발광 반도체 레이저 및 그 제조 방법 및 전자 소자의제조 방법
KR100631359B1 (ko) * 2003-08-07 2006-10-09 세이코 엡슨 가부시키가이샤 면발광형 반도체 레이저, 광 모듈 및 광 전달 장치

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JPH07326813A (ja) * 1994-05-31 1995-12-12 Gijutsu Kenkyu Kumiai Shinjiyouhou Shiyori Kaihatsu Kiko 光スイッチ
JPH11220206A (ja) * 1998-01-30 1999-08-10 Furukawa Electric Co Ltd:The 多波長面発光半導体レーザ装置の製造方法
JP2000058958A (ja) * 1998-08-06 2000-02-25 Nippon Telegr & Teleph Corp <Ntt> 多波長面発光半導体レーザアレイ
JP3566902B2 (ja) * 1999-09-13 2004-09-15 古河電気工業株式会社 面発光半導体レーザ素子
WO2002071562A2 (en) 2001-03-02 2002-09-12 Science & Technology Corporation @ Unm Quantum dot vertical cavity surface emitting laser
JP3692060B2 (ja) 2001-09-14 2005-09-07 株式会社東芝 垂直共振器型半導体発光素子
US7656924B2 (en) * 2002-04-05 2010-02-02 The Furukawa Electric Co., Ltd. Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser
JP2004063634A (ja) * 2002-07-26 2004-02-26 Ricoh Co Ltd 半導体分布ブラッグ反射器および面発光レーザ素子および面発光レーザアレイおよび光通信システムおよび光インターコネクションシステム
WO2004015454A2 (en) 2002-07-30 2004-02-19 The Board Of Trustees Of The Leland Stanford Junior University Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material
EP1387452B1 (en) 2002-07-30 2006-09-06 Hitachi, Ltd. Optical device
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
JP2005116933A (ja) * 2003-10-10 2005-04-28 Sony Corp 面発光レーザ素子アレイおよび面発光レーザ素子アレイの製造方法
US20070242716A1 (en) * 2004-03-19 2007-10-18 Arizona Board Of Regents, A Body Corporation Acting On Behalf Of Arizona State University High Power Vcsels With Transverse Mode Control
JP4839662B2 (ja) * 2005-04-08 2011-12-21 富士ゼロックス株式会社 面発光半導体レーザアレイおよびそれを用いた光伝送システム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040100962A (ko) * 2003-05-19 2004-12-02 소니 가부시끼 가이샤 면발광형 반도체 레이저소자
KR100631359B1 (ko) * 2003-08-07 2006-10-09 세이코 엡슨 가부시키가이샤 면발광형 반도체 레이저, 광 모듈 및 광 전달 장치
KR20060048158A (ko) * 2004-06-04 2006-05-18 소니 가부시끼 가이샤 면 발광 반도체 레이저 및 그 제조 방법 및 전자 소자의제조 방법

Also Published As

Publication number Publication date
KR20080000530A (ko) 2008-01-02
TW200805844A (en) 2008-01-16
JP2008034797A (ja) 2008-02-14
EP1873878B1 (en) 2009-03-25
DE602007000751D1 (de) 2009-05-07
US20070297484A1 (en) 2007-12-27
JP4985954B2 (ja) 2012-07-25
EP1873878A1 (en) 2008-01-02
US7424043B2 (en) 2008-09-09

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