JP4985954B2 - 面発光型半導体レーザ - Google Patents

面発光型半導体レーザ Download PDF

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Publication number
JP4985954B2
JP4985954B2 JP2007080820A JP2007080820A JP4985954B2 JP 4985954 B2 JP4985954 B2 JP 4985954B2 JP 2007080820 A JP2007080820 A JP 2007080820A JP 2007080820 A JP2007080820 A JP 2007080820A JP 4985954 B2 JP4985954 B2 JP 4985954B2
Authority
JP
Japan
Prior art keywords
layer
refractive index
semiconductor laser
mirror
emitting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007080820A
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English (en)
Japanese (ja)
Other versions
JP2008034797A (ja
JP2008034797A5 (enExample
Inventor
理光 望月
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2007080820A priority Critical patent/JP4985954B2/ja
Priority to US11/761,748 priority patent/US7424043B2/en
Priority to TW096122764A priority patent/TW200805844A/zh
Priority to KR1020070063029A priority patent/KR100826732B1/ko
Priority to EP07012566A priority patent/EP1873878B1/en
Priority to DE602007000751T priority patent/DE602007000751D1/de
Publication of JP2008034797A publication Critical patent/JP2008034797A/ja
Publication of JP2008034797A5 publication Critical patent/JP2008034797A5/ja
Application granted granted Critical
Publication of JP4985954B2 publication Critical patent/JP4985954B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2007080820A 2006-06-27 2007-03-27 面発光型半導体レーザ Expired - Fee Related JP4985954B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007080820A JP4985954B2 (ja) 2006-06-27 2007-03-27 面発光型半導体レーザ
US11/761,748 US7424043B2 (en) 2006-06-27 2007-06-12 Surface-emitting type semiconductor laser
TW096122764A TW200805844A (en) 2006-06-27 2007-06-23 Surface-emitting type semiconductor laser
KR1020070063029A KR100826732B1 (ko) 2006-06-27 2007-06-26 면발광형 반도체 레이저
EP07012566A EP1873878B1 (en) 2006-06-27 2007-06-27 Surface-emitting type semiconductor laser
DE602007000751T DE602007000751D1 (de) 2006-06-27 2007-06-27 Oberflächenemittierender Halbleiterlaser

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006176372 2006-06-27
JP2006176372 2006-06-27
JP2007080820A JP4985954B2 (ja) 2006-06-27 2007-03-27 面発光型半導体レーザ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009275561A Division JP5494936B2 (ja) 2006-06-27 2009-12-03 面発光型半導体レーザ

Publications (3)

Publication Number Publication Date
JP2008034797A JP2008034797A (ja) 2008-02-14
JP2008034797A5 JP2008034797A5 (enExample) 2010-01-28
JP4985954B2 true JP4985954B2 (ja) 2012-07-25

Family

ID=38292644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007080820A Expired - Fee Related JP4985954B2 (ja) 2006-06-27 2007-03-27 面発光型半導体レーザ

Country Status (6)

Country Link
US (1) US7424043B2 (enExample)
EP (1) EP1873878B1 (enExample)
JP (1) JP4985954B2 (enExample)
KR (1) KR100826732B1 (enExample)
DE (1) DE602007000751D1 (enExample)
TW (1) TW200805844A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100536266C (zh) * 2006-06-27 2009-09-02 精工爱普生株式会社 面发光型半导体激光器
KR101292390B1 (ko) * 2008-05-02 2013-08-01 가부시키가이샤 리코 수직 공진기형 면발광 레이저 소자, 수직 공진기형 면발광 레이저 어레이, 광 주사 장치 및 화상 형성 장치
JP5262293B2 (ja) * 2008-05-26 2013-08-14 三菱電機株式会社 光半導体装置
JP2010251458A (ja) * 2009-04-14 2010-11-04 Sony Corp 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法
JP5444994B2 (ja) * 2009-09-25 2014-03-19 三菱電機株式会社 半導体受光素子
KR101725342B1 (ko) 2009-10-12 2017-04-11 삼성디스플레이 주식회사 광배향용 마스크, 이를 이용한 광배향 방법 및 액정 표시 장치
JP2017045802A (ja) * 2015-08-25 2017-03-02 キヤノン株式会社 光伝導素子
WO2019171864A1 (ja) 2018-03-06 2019-09-12 ソニー株式会社 発光素子

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326813A (ja) * 1994-05-31 1995-12-12 Gijutsu Kenkyu Kumiai Shinjiyouhou Shiyori Kaihatsu Kiko 光スイッチ
JPH11220206A (ja) * 1998-01-30 1999-08-10 Furukawa Electric Co Ltd:The 多波長面発光半導体レーザ装置の製造方法
JP2000058958A (ja) * 1998-08-06 2000-02-25 Nippon Telegr & Teleph Corp <Ntt> 多波長面発光半導体レーザアレイ
JP3566902B2 (ja) * 1999-09-13 2004-09-15 古河電気工業株式会社 面発光半導体レーザ素子
WO2002071562A2 (en) 2001-03-02 2002-09-12 Science & Technology Corporation @ Unm Quantum dot vertical cavity surface emitting laser
JP3692060B2 (ja) 2001-09-14 2005-09-07 株式会社東芝 垂直共振器型半導体発光素子
US7656924B2 (en) * 2002-04-05 2010-02-02 The Furukawa Electric Co., Ltd. Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser
JP2004063634A (ja) * 2002-07-26 2004-02-26 Ricoh Co Ltd 半導体分布ブラッグ反射器および面発光レーザ素子および面発光レーザアレイおよび光通信システムおよび光インターコネクションシステム
WO2004015454A2 (en) 2002-07-30 2004-02-19 The Board Of Trustees Of The Leland Stanford Junior University Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material
EP1387452B1 (en) 2002-07-30 2006-09-06 Hitachi, Ltd. Optical device
JP3838218B2 (ja) * 2003-05-19 2006-10-25 ソニー株式会社 面発光型半導体レーザ素子及びその製造方法
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
JP3738849B2 (ja) * 2003-08-07 2006-01-25 セイコーエプソン株式会社 面発光型半導体レーザ、光モジュール、ならびに光伝達装置
JP2005116933A (ja) * 2003-10-10 2005-04-28 Sony Corp 面発光レーザ素子アレイおよび面発光レーザ素子アレイの製造方法
US20070242716A1 (en) * 2004-03-19 2007-10-18 Arizona Board Of Regents, A Body Corporation Acting On Behalf Of Arizona State University High Power Vcsels With Transverse Mode Control
JP3876895B2 (ja) * 2004-06-04 2007-02-07 ソニー株式会社 面発光半導体レーザ
JP4839662B2 (ja) * 2005-04-08 2011-12-21 富士ゼロックス株式会社 面発光半導体レーザアレイおよびそれを用いた光伝送システム

Also Published As

Publication number Publication date
KR20080000530A (ko) 2008-01-02
TW200805844A (en) 2008-01-16
JP2008034797A (ja) 2008-02-14
EP1873878B1 (en) 2009-03-25
DE602007000751D1 (de) 2009-05-07
KR100826732B1 (ko) 2008-04-30
US20070297484A1 (en) 2007-12-27
EP1873878A1 (en) 2008-01-02
US7424043B2 (en) 2008-09-09

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