KR100824661B1 - 반도체 소자의 제조방법 - Google Patents
반도체 소자의 제조방법 Download PDFInfo
- Publication number
- KR100824661B1 KR100824661B1 KR1020010087250A KR20010087250A KR100824661B1 KR 100824661 B1 KR100824661 B1 KR 100824661B1 KR 1020010087250 A KR1020010087250 A KR 1020010087250A KR 20010087250 A KR20010087250 A KR 20010087250A KR 100824661 B1 KR100824661 B1 KR 100824661B1
- Authority
- KR
- South Korea
- Prior art keywords
- heat treatment
- ion implantation
- polysilicon film
- semiconductor device
- film
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 229920005591 polysilicon Polymers 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000005468 ion implantation Methods 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 230000000087 stabilizing effect Effects 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- -1 nitrogen ions Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Abstract
Description
Claims (5)
- 소자 격리막에 의해 액티브영역 및 필드영역이 정의된 반도체 기판 상에 게이트 산화막, 전극 형성용 폴리실리콘막을 차례로 형성하는 단계;상기 폴리실리콘막의 표면에 질소를 이온주입한 후, 150℃/second의 승온속도로 승온시켜 1000℃의 온도에서 급속 열처리(RTP) 공정을 수행하는 단계;상기 급속 열처리 공정 후 급냉각 공정을 수행하는 단계를 포함하여 이루어짐을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 게이트 산화막은 20Å의 두께로 형성함을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 폴리실리콘막은 2000Å의 두께로 형성함을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서,상기 폴리실리콘막에 이온주입하는 단계는 1∼5KeV의 에너지와 1E15∼3E15 atoms/cm2의 도즈량으로 이온주입함을 특징으로 하는 반도체 소자의 제조방법.
- 삭제
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010087250A KR100824661B1 (ko) | 2001-12-28 | 2001-12-28 | 반도체 소자의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010087250A KR100824661B1 (ko) | 2001-12-28 | 2001-12-28 | 반도체 소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030056909A KR20030056909A (ko) | 2003-07-04 |
KR100824661B1 true KR100824661B1 (ko) | 2008-04-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020010087250A KR100824661B1 (ko) | 2001-12-28 | 2001-12-28 | 반도체 소자의 제조방법 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1064837A (ja) * | 1996-08-19 | 1998-03-06 | Nippon Steel Corp | 半導体基板及びその製造方法 |
JPH10189949A (ja) * | 1996-12-24 | 1998-07-21 | Sony Corp | Mos型半導体装置およびその製造方法 |
JPH11204793A (ja) * | 1997-10-24 | 1999-07-30 | Lsi Logic Corp | 電子デバイスのゲート酸化物を硬化させる方法及び半導体デバイス |
KR20000050488A (ko) * | 1999-01-11 | 2000-08-05 | 윤종용 | 듀얼 게이트 구조를 갖는 반도체 장치의 제조 방법 |
-
2001
- 2001-12-28 KR KR1020010087250A patent/KR100824661B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1064837A (ja) * | 1996-08-19 | 1998-03-06 | Nippon Steel Corp | 半導体基板及びその製造方法 |
JPH10189949A (ja) * | 1996-12-24 | 1998-07-21 | Sony Corp | Mos型半導体装置およびその製造方法 |
JPH11204793A (ja) * | 1997-10-24 | 1999-07-30 | Lsi Logic Corp | 電子デバイスのゲート酸化物を硬化させる方法及び半導体デバイス |
KR20000050488A (ko) * | 1999-01-11 | 2000-08-05 | 윤종용 | 듀얼 게이트 구조를 갖는 반도체 장치의 제조 방법 |
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KR20030056909A (ko) | 2003-07-04 |
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