KR100821115B1 - 메모리 링크 처리용 온 더 플라이 빔 경로 에러 정정 방법 - Google Patents
메모리 링크 처리용 온 더 플라이 빔 경로 에러 정정 방법 Download PDFInfo
- Publication number
- KR100821115B1 KR100821115B1 KR1020037010793A KR20037010793A KR100821115B1 KR 100821115 B1 KR100821115 B1 KR 100821115B1 KR 1020037010793 A KR1020037010793 A KR 1020037010793A KR 20037010793 A KR20037010793 A KR 20037010793A KR 100821115 B1 KR100821115 B1 KR 100821115B1
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- KR
- South Korea
- Prior art keywords
- axis
- processing
- laser beam
- high speed
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- 238000012545 processing Methods 0.000 title claims abstract description 32
- 238000012937 correction Methods 0.000 title abstract description 21
- 238000000034 method Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 16
- 210000001747 pupil Anatomy 0.000 claims description 10
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000007246 mechanism Effects 0.000 abstract description 4
- 230000009021 linear effect Effects 0.000 description 22
- 238000013461 design Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 210000003128 head Anatomy 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- -1 silicide metals Chemical class 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000036461 convulsion Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000003562 lightweight material Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26964601P | 2001-02-16 | 2001-02-16 | |
US60/269,646 | 2001-02-16 | ||
PCT/US2002/004561 WO2002067180A1 (en) | 2001-02-16 | 2002-02-15 | On-the-fly beam path error correction for memory link processing |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030091990A KR20030091990A (ko) | 2003-12-03 |
KR100821115B1 true KR100821115B1 (ko) | 2008-04-11 |
Family
ID=23028100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037010793A KR100821115B1 (ko) | 2001-02-16 | 2002-02-15 | 메모리 링크 처리용 온 더 플라이 빔 경로 에러 정정 방법 |
Country Status (8)
Country | Link |
---|---|
JP (3) | JP4397163B2 (zh) |
KR (1) | KR100821115B1 (zh) |
CN (2) | CN101172319A (zh) |
CA (1) | CA2438566A1 (zh) |
DE (1) | DE10296339T5 (zh) |
GB (1) | GB2390699B (zh) |
TW (1) | TW535199B (zh) |
WO (1) | WO2002067180A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6706999B1 (en) * | 2003-02-24 | 2004-03-16 | Electro Scientific Industries, Inc. | Laser beam tertiary positioner apparatus and method |
US7363180B2 (en) * | 2005-02-15 | 2008-04-22 | Electro Scientific Industries, Inc. | Method for correcting systematic errors in a laser processing system |
US7297972B2 (en) * | 2005-08-26 | 2007-11-20 | Electro Scientific Industries, Inc. | Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target |
US8026158B2 (en) * | 2007-06-01 | 2011-09-27 | Electro Scientific Industries, Inc. | Systems and methods for processing semiconductor structures using laser pulses laterally distributed in a scanning window |
US8378259B2 (en) * | 2008-06-17 | 2013-02-19 | Electro Scientific Industries, Inc. | Eliminating head-to-head offsets along common chuck travel direction in multi-head laser machining systems |
TWI523720B (zh) | 2009-05-28 | 2016-03-01 | 伊雷克托科學工業股份有限公司 | 應用於雷射處理工件中的特徵的聲光偏轉器及相關雷射處理方法 |
WO2012054927A2 (en) * | 2010-10-22 | 2012-04-26 | Electro Scientific Industries, Inc. | Laser processing systems and methods for beam dithering and skiving |
JP6516722B2 (ja) | 2013-03-15 | 2019-05-22 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | ビームポジショナのレーザ出射に基づく制御 |
KR102245812B1 (ko) * | 2013-03-15 | 2021-04-30 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | Aod 이동 저감을 위한 aod 툴 정착을 위한 레이저 시스템 및 방법 |
CN111266741A (zh) * | 2018-11-19 | 2020-06-12 | 深圳市圭华智能科技有限公司 | 激光加工系统及激光加工方法 |
JP7442351B2 (ja) * | 2020-03-12 | 2024-03-04 | 株式会社ディスコ | レーザー加工装置 |
EP4201577A4 (en) * | 2020-08-18 | 2024-05-29 | Nikon Corporation | OPTICAL DEVICE AND PROCESSING DEVICE |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1006938B (zh) * | 1985-04-01 | 1990-02-21 | 索尼公司 | 光信息再现设备 |
JPH089110B2 (ja) * | 1988-03-03 | 1996-01-31 | 株式会社ニコン | レーザ加工装置のレーザビーム制御方法 |
JP2942804B2 (ja) * | 1988-03-03 | 1999-08-30 | 株式会社ニコン | レーザ加工装置及びレーザ加工装置のレーザビーム制御方法 |
DE4000166A1 (de) * | 1990-01-05 | 1991-07-11 | Hell Rudolf Dr Ing Gmbh | Verfahren und einrichtung zur korrektur von positionsfehlern eines abgelenkten lichtstrahls |
US5673110A (en) * | 1993-01-26 | 1997-09-30 | Phase Metrics, Inc. | Multiplexed laser interferometer for non-dispersed spectrum detection in a dynamic flying height tester |
JPH08195461A (ja) * | 1995-01-18 | 1996-07-30 | Hitachi Constr Mach Co Ltd | ダムバー加工方法及びダムバー加工装置 |
US5847960A (en) * | 1995-03-20 | 1998-12-08 | Electro Scientific Industries, Inc. | Multi-tool positioning system |
US5751585A (en) * | 1995-03-20 | 1998-05-12 | Electro Scientific Industries, Inc. | High speed, high accuracy multi-stage tool positioning system |
JPH08316396A (ja) * | 1995-05-16 | 1996-11-29 | Hitachi Constr Mach Co Ltd | ダムバー切断方法及びダムバー切断装置 |
JPH0970679A (ja) * | 1995-09-07 | 1997-03-18 | Nikon Corp | レーザ加工装置の制御方法 |
CN1180221A (zh) * | 1996-09-30 | 1998-04-29 | 大宇电子株式会社 | 控制光盘播放机的跟踪平衡装置和方法 |
JP3769942B2 (ja) * | 1997-09-02 | 2006-04-26 | セイコーエプソン株式会社 | レーザー加工方法及び装置、並びに非導電性透明基板の回路形成方法及び装置 |
JPH11267873A (ja) * | 1998-03-23 | 1999-10-05 | Seiko Epson Corp | レーザ光の走査光学系及びレーザ加工装置 |
US6088107A (en) * | 1998-10-20 | 2000-07-11 | Trw Inc. | High resolution positioner |
JPH11245061A (ja) * | 1998-12-15 | 1999-09-14 | Nikon Corp | レーザ加工装置のレーザビーム制御方法 |
-
2002
- 2002-02-15 CN CNA2007100915231A patent/CN101172319A/zh active Pending
- 2002-02-15 DE DE10296339T patent/DE10296339T5/de not_active Withdrawn
- 2002-02-15 CN CNB028046862A patent/CN1317667C/zh not_active Expired - Lifetime
- 2002-02-15 CA CA002438566A patent/CA2438566A1/en not_active Abandoned
- 2002-02-15 GB GB0318352A patent/GB2390699B/en not_active Expired - Fee Related
- 2002-02-15 WO PCT/US2002/004561 patent/WO2002067180A1/en active Application Filing
- 2002-02-15 JP JP2002566426A patent/JP4397163B2/ja not_active Expired - Lifetime
- 2002-02-15 KR KR1020037010793A patent/KR100821115B1/ko active IP Right Grant
- 2002-02-15 TW TW091102701A patent/TW535199B/zh not_active IP Right Cessation
-
2007
- 2007-04-24 JP JP2007114770A patent/JP4833909B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-07 JP JP2011024232A patent/JP5055443B2/ja not_active Expired - Lifetime
Non-Patent Citations (3)
Title |
---|
미국특허 5,751,585호(1998.05.12) |
미국특허 5,798,927호(1998.08.25) |
미국특허 5,847,960호(1998.12.08) |
Also Published As
Publication number | Publication date |
---|---|
JP4833909B2 (ja) | 2011-12-07 |
JP4397163B2 (ja) | 2010-01-13 |
JP2004527376A (ja) | 2004-09-09 |
CN1317667C (zh) | 2007-05-23 |
CA2438566A1 (en) | 2002-08-29 |
JP2011098394A (ja) | 2011-05-19 |
KR20030091990A (ko) | 2003-12-03 |
CN1491398A (zh) | 2004-04-21 |
DE10296339T5 (de) | 2004-04-15 |
CN101172319A (zh) | 2008-05-07 |
GB2390699B (en) | 2004-10-13 |
GB0318352D0 (en) | 2003-09-10 |
JP2007203375A (ja) | 2007-08-16 |
WO2002067180A1 (en) | 2002-08-29 |
TW535199B (en) | 2003-06-01 |
GB2390699A (en) | 2004-01-14 |
JP5055443B2 (ja) | 2012-10-24 |
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