KR100810203B1 - 반도체 디바이스에서 피처를 패터닝하기 위한 기술 - Google Patents

반도체 디바이스에서 피처를 패터닝하기 위한 기술 Download PDF

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KR100810203B1
KR100810203B1 KR1020067003310A KR20067003310A KR100810203B1 KR 100810203 B1 KR100810203 B1 KR 100810203B1 KR 1020067003310 A KR1020067003310 A KR 1020067003310A KR 20067003310 A KR20067003310 A KR 20067003310A KR 100810203 B1 KR100810203 B1 KR 100810203B1
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South Korea
Prior art keywords
antireflective material
substrate
feature
features
antireflective
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Expired - Fee Related
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Korean (ko)
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KR20060064650A (ko
Inventor
스콧 디. 알렌
캐서리나 이. 바비치
스티븐 제이. 홈즈
아르판 피. 마호로월러
더크 파이퍼
리차드 스테판 와이즈
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인터내셔널 비지네스 머신즈 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020067003310A 2003-09-12 2004-05-13 반도체 디바이스에서 피처를 패터닝하기 위한 기술 Expired - Fee Related KR100810203B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/661,041 2003-09-12
US10/661,041 US7030008B2 (en) 2003-09-12 2003-09-12 Techniques for patterning features in semiconductor devices

Publications (2)

Publication Number Publication Date
KR20060064650A KR20060064650A (ko) 2006-06-13
KR100810203B1 true KR100810203B1 (ko) 2008-03-07

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KR1020067003310A Expired - Fee Related KR100810203B1 (ko) 2003-09-12 2004-05-13 반도체 디바이스에서 피처를 패터닝하기 위한 기술

Country Status (7)

Country Link
US (3) US7030008B2 (https=)
EP (1) EP1665347A1 (https=)
JP (1) JP4755592B2 (https=)
KR (1) KR100810203B1 (https=)
CN (1) CN1849698B (https=)
TW (1) TWI345803B (https=)
WO (1) WO2005036625A1 (https=)

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US8026180B2 (en) * 2007-07-12 2011-09-27 Micron Technology, Inc. Methods of modifying oxide spacers
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US8409457B2 (en) * 2008-08-29 2013-04-02 Micron Technology, Inc. Methods of forming a photoresist-comprising pattern on a substrate
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US8268543B2 (en) * 2009-03-23 2012-09-18 Micron Technology, Inc. Methods of forming patterns on substrates
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US8323871B2 (en) * 2010-02-24 2012-12-04 International Business Machines Corporation Antireflective hardmask composition and a method of preparing a patterned material using same
CN102222640B (zh) * 2010-04-16 2013-08-14 中芯国际集成电路制造(上海)有限公司 通孔形成方法
US20110253670A1 (en) * 2010-04-19 2011-10-20 Applied Materials, Inc. Methods for etching silicon-based antireflective layers
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US9054160B2 (en) 2011-04-15 2015-06-09 International Business Machines Corporation Interconnect structure and method for fabricating on-chip interconnect structures by image reversal
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US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US8822137B2 (en) 2011-08-03 2014-09-02 International Business Machines Corporation Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication
US20130062732A1 (en) 2011-09-08 2013-03-14 International Business Machines Corporation Interconnect structures with functional components and methods for fabrication
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
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US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9159581B2 (en) 2012-11-27 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a semiconductor device using a bottom antireflective coating (BARC) layer
US9153455B2 (en) * 2013-06-19 2015-10-06 Micron Technology, Inc. Methods of forming semiconductor device structures, memory cells, and arrays
US9917027B2 (en) * 2015-12-30 2018-03-13 Globalfoundries Singapore Pte. Ltd. Integrated circuits with aluminum via structures and methods for fabricating the same
US10157773B1 (en) * 2017-11-28 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having layer with re-entrant profile and method of forming the same
US10867842B2 (en) * 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for shrinking openings in forming integrated circuits
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WO2010123528A3 (en) * 2008-12-30 2011-01-06 3M Innovative Properties Company Nanostructured articles and methods of making nanostructured articles
US9435916B2 (en) 2008-12-30 2016-09-06 3M Innovative Properties Company Antireflective articles and methods of making the same
US9908772B2 (en) 2008-12-30 2018-03-06 3M Innovative Properties Company Nanostructured articles and methods of making nanostructured articles
US9939557B2 (en) 2008-12-30 2018-04-10 3M Innovative Properties Company Antireflective articles and methods of making the same

Also Published As

Publication number Publication date
JP2007505492A (ja) 2007-03-08
TW200523998A (en) 2005-07-16
US20050056823A1 (en) 2005-03-17
CN1849698B (zh) 2012-07-11
US7545041B2 (en) 2009-06-09
EP1665347A1 (en) 2006-06-07
US20080187731A1 (en) 2008-08-07
US7030008B2 (en) 2006-04-18
US20060118785A1 (en) 2006-06-08
CN1849698A (zh) 2006-10-18
KR20060064650A (ko) 2006-06-13
WO2005036625A1 (en) 2005-04-21
TWI345803B (en) 2011-07-21
JP4755592B2 (ja) 2011-08-24

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