KR100794716B1 - 트렌치 쇼트키 배리어 정류기 및 이러한 정류기의 제조 방법 - Google Patents

트렌치 쇼트키 배리어 정류기 및 이러한 정류기의 제조 방법 Download PDF

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KR100794716B1
KR100794716B1 KR1020037007940A KR20037007940A KR100794716B1 KR 100794716 B1 KR100794716 B1 KR 100794716B1 KR 1020037007940 A KR1020037007940 A KR 1020037007940A KR 20037007940 A KR20037007940 A KR 20037007940A KR 100794716 B1 KR100794716 B1 KR 100794716B1
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South Korea
Prior art keywords
region
trench
forming
layer
oxide layer
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KR1020037007940A
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English (en)
Korean (ko)
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KR20040033283A (ko
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퓨-이우안 흐쉬에
군 총 소
존 이. 아마토
Original Assignee
제네럴 세미컨덕터, 인코포레이티드
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Publication of KR20040033283A publication Critical patent/KR20040033283A/ko
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Publication of KR100794716B1 publication Critical patent/KR100794716B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020037007940A 2000-12-15 2001-12-13 트렌치 쇼트키 배리어 정류기 및 이러한 정류기의 제조 방법 KR100794716B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/737,357 US6420768B1 (en) 2000-12-15 2000-12-15 Trench schottky barrier rectifier and method of making the same
US09/737,357 2000-12-15
PCT/US2001/048914 WO2002049118A2 (en) 2000-12-15 2001-12-13 Trench schottky barrier rectifier and method of making the same

Publications (2)

Publication Number Publication Date
KR20040033283A KR20040033283A (ko) 2004-04-21
KR100794716B1 true KR100794716B1 (ko) 2008-01-15

Family

ID=24963592

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037007940A KR100794716B1 (ko) 2000-12-15 2001-12-13 트렌치 쇼트키 배리어 정류기 및 이러한 정류기의 제조 방법

Country Status (9)

Country Link
US (2) US6420768B1 (de)
EP (1) EP1346417B1 (de)
JP (1) JP4440542B2 (de)
KR (1) KR100794716B1 (de)
CN (1) CN1315197C (de)
AU (1) AU2002230986A1 (de)
DE (1) DE60118432T2 (de)
TW (1) TW511191B (de)
WO (1) WO2002049118A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6707127B1 (en) * 2000-08-31 2004-03-16 General Semiconductor, Inc. Trench schottky rectifier
FR2850791B1 (fr) * 2003-01-30 2006-01-21 St Microelectronics Sa Composant unipolaire vertical
FR2864345B1 (fr) * 2003-12-18 2006-03-31 St Microelectronics Sa Realisation de la peripherie d'une diode schottky a tranchees mos
CN100424836C (zh) * 2006-12-20 2008-10-08 鞍山市华辰电力器件有限公司 一次涂源全扩散生产整流管芯片的工艺方法
KR100824205B1 (ko) * 2006-12-26 2008-04-21 매그나칩 반도체 유한회사 Dmos 트랜지스터 및 그 제조방법
KR101067953B1 (ko) * 2009-05-12 2011-09-26 주식회사 케이이씨 쇼트키 배리어 다이오드 내장 트렌치 ｍｏｓｆｅｔ 및 그 제조 방법
TWI469221B (zh) * 2009-06-26 2015-01-11 Pfc Device Co 溝渠式蕭基二極體及其製作方法
US9577079B2 (en) 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
CN101800252B (zh) * 2010-03-04 2012-05-30 无锡新洁能功率半导体有限公司 沟槽型肖特基势垒整流器及其制造方法
JP2011243948A (ja) * 2010-04-22 2011-12-01 Elpida Memory Inc 半導体装置及びその製造方法
US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
CN103383969B (zh) * 2012-05-06 2017-04-26 朱江 一种肖特基器件及其制备方法
MY185098A (en) * 2014-08-29 2021-04-30 Mimos Berhad A method for manufacturing a large schottky diode
KR102147640B1 (ko) 2018-04-25 2020-08-25 심요섭 이동형 동물 사체 화장장치
CN109378312B (zh) * 2018-09-14 2020-08-18 西安交通大学 一种体掺杂金刚石基常关型场效应晶体管及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082795A (en) 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
US5365102A (en) 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982260A (en) 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
US5262668A (en) 1992-08-13 1993-11-16 North Carolina State University At Raleigh Schottky barrier rectifier including schottky barrier regions of differing barrier heights
US6078090A (en) * 1997-04-02 2000-06-20 Siliconix Incorporated Trench-gated Schottky diode with integral clamping diode
US5612567A (en) 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082795A (en) 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
US5365102A (en) 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench

Also Published As

Publication number Publication date
EP1346417B1 (de) 2006-03-29
US20020074578A1 (en) 2002-06-20
WO2002049118A2 (en) 2002-06-20
TW511191B (en) 2002-11-21
JP2004521487A (ja) 2004-07-15
AU2002230986A1 (en) 2002-06-24
WO2002049118A3 (en) 2003-04-03
US6558984B2 (en) 2003-05-06
EP1346417A2 (de) 2003-09-24
KR20040033283A (ko) 2004-04-21
DE60118432D1 (de) 2006-05-18
CN1529912A (zh) 2004-09-15
US20020074613A1 (en) 2002-06-20
DE60118432T2 (de) 2006-09-21
US6420768B1 (en) 2002-07-16
CN1315197C (zh) 2007-05-09
JP4440542B2 (ja) 2010-03-24

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