KR100751741B1 - 레이저 열처리 장치 및 방법 - Google Patents

레이저 열처리 장치 및 방법 Download PDF

Info

Publication number
KR100751741B1
KR100751741B1 KR1020027010421A KR20027010421A KR100751741B1 KR 100751741 B1 KR100751741 B1 KR 100751741B1 KR 1020027010421 A KR1020027010421 A KR 1020027010421A KR 20027010421 A KR20027010421 A KR 20027010421A KR 100751741 B1 KR100751741 B1 KR 100751741B1
Authority
KR
South Korea
Prior art keywords
workpiece
radiation
exposure field
laser
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020027010421A
Other languages
English (en)
Korean (ko)
Other versions
KR20020093805A (ko
Inventor
호리럭앤드류엠
왕웨이지안
스티테스데이비드쥐
퐁유췌
Original Assignee
울트라테크 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 울트라테크 인크. filed Critical 울트라테크 인크.
Publication of KR20020093805A publication Critical patent/KR20020093805A/ko
Application granted granted Critical
Publication of KR100751741B1 publication Critical patent/KR100751741B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/06—Surface hardening
    • C21D1/09—Surface hardening by direct application of electrical or wave energy; by particle radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/34—Methods of heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020027010421A 2000-02-16 2000-12-28 레이저 열처리 장치 및 방법 Expired - Fee Related KR100751741B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/505,605 2000-02-16
US09/505,605 US6366308B1 (en) 2000-02-16 2000-02-16 Laser thermal processing apparatus and method

Publications (2)

Publication Number Publication Date
KR20020093805A KR20020093805A (ko) 2002-12-16
KR100751741B1 true KR100751741B1 (ko) 2007-08-27

Family

ID=24011035

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027010421A Expired - Fee Related KR100751741B1 (ko) 2000-02-16 2000-12-28 레이저 열처리 장치 및 방법

Country Status (6)

Country Link
US (1) US6366308B1 (enExample)
EP (1) EP1256030B1 (enExample)
JP (2) JP4921673B2 (enExample)
KR (1) KR100751741B1 (enExample)
DE (1) DE60041833D1 (enExample)
WO (1) WO2001061407A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015003817A1 (de) * 2013-07-12 2015-01-15 Manz Ag Vorrichtung und verfahren zum thermischen behandeln eines substrats

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2349912A1 (en) * 2000-07-07 2002-01-07 Heidelberger Druckmaschinen Aktiengesellschaft Setting an image on a printing plate using ultrashort laser pulses
US6577380B1 (en) * 2000-07-21 2003-06-10 Anvik Corporation High-throughput materials processing system
JP2002280323A (ja) * 2001-03-16 2002-09-27 Semiconductor Energy Lab Co Ltd レーザ照射装置
US7154066B2 (en) 2002-11-06 2006-12-26 Ultratech, Inc. Laser scanning apparatus and methods for thermal processing
US20060091120A1 (en) * 2002-11-06 2006-05-04 Markle David A Recycling optical systems and methods for thermal processing
US6747245B2 (en) * 2002-11-06 2004-06-08 Ultratech Stepper, Inc. Laser scanning apparatus and methods for thermal processing
US6844250B1 (en) 2003-03-13 2005-01-18 Ultratech, Inc. Method and system for laser thermal processing of semiconductor devices
US20050000438A1 (en) * 2003-07-03 2005-01-06 Lim Brian Y. Apparatus and method for fabrication of nanostructures using multiple prongs of radiating energy
US20050189329A1 (en) * 2003-09-02 2005-09-01 Somit Talwar Laser thermal processing with laser diode radiation
US7763828B2 (en) * 2003-09-02 2010-07-27 Ultratech, Inc. Laser thermal processing with laser diode radiation
KR100531416B1 (ko) * 2003-09-17 2005-11-29 엘지.필립스 엘시디 주식회사 Ｓｌｓ 장비 및 이를 이용한 실리콘 결정화 방법
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
US7148159B2 (en) * 2003-09-29 2006-12-12 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
TWI272149B (en) * 2004-02-26 2007-02-01 Ultratech Inc Laser scanning apparatus and methods for thermal processing
US7155106B2 (en) * 2004-05-28 2006-12-26 The Boeing Company High efficiency multi-spectral optical splitter
US7326877B2 (en) * 2004-12-01 2008-02-05 Ultratech, Inc. Laser thermal processing chuck with a thermal compensating heater module
US7731798B2 (en) * 2004-12-01 2010-06-08 Ultratech, Inc. Heated chuck for laser thermal processing
US7182495B2 (en) * 2005-05-03 2007-02-27 The Boeing Company Light mixing and homogenizing apparatus and method
US7113684B1 (en) * 2005-06-15 2006-09-26 The Boeing Company Hex tube light homogenizer splitter
US7265906B2 (en) * 2005-07-12 2007-09-04 The Boeing Company Tri-to-hex light mixing and homogenizing apparatus and method
US7324731B2 (en) * 2005-08-09 2008-01-29 The Boeing Company Systems and methods for distributing signals communicated on fiber optic transmission lines
KR100729221B1 (ko) * 2006-01-06 2007-06-19 코닉시스템 주식회사 수평이동가능한 윈도우 모듈을 가지는 레이저 열처리 장치
US20070221640A1 (en) 2006-03-08 2007-09-27 Dean Jennings Apparatus for thermal processing structures formed on a substrate
JP2007307597A (ja) * 2006-05-19 2007-11-29 Disco Abrasive Syst Ltd レーザー加工装置
US7414793B2 (en) 2006-07-21 2008-08-19 The Boeing Company White light splitting and homogenizing systems and methods
US20080025354A1 (en) * 2006-07-31 2008-01-31 Dean Jennings Ultra-Fast Beam Dithering with Surface Acoustic Wave Modulator
US7548364B2 (en) 2006-07-31 2009-06-16 Applied Materials, Inc. Ultra-fast beam dithering with surface acoustic wave modulator
US7443591B1 (en) * 2007-02-01 2008-10-28 The Boeing Company Homogenizing optical beam combiner
US7603017B2 (en) * 2007-02-01 2009-10-13 The Boeing Company Multi-color curved multi-light generating apparatus
US7386214B1 (en) 2007-02-01 2008-06-10 The Boeing Company Homogenizing optical beam combiner
US7732353B2 (en) * 2007-04-18 2010-06-08 Ultratech, Inc. Methods of forming a denuded zone in a semiconductor wafer using rapid laser annealing
JP2010525581A (ja) * 2007-05-01 2010-07-22 マトソン テクノロジー カナダ インコーポレイテッド 照射パルス熱処理方法および装置
US8148663B2 (en) 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
US7947968B1 (en) 2009-01-29 2011-05-24 Ultratech, Inc. Processing substrates using direct and recycled radiation
US8610986B2 (en) * 2009-04-06 2013-12-17 The Board Of Trustees Of The University Of Illinois Mirror arrays for maskless photolithography and image display
EP2239084A1 (en) 2009-04-07 2010-10-13 Excico France Method of and apparatus for irradiating a semiconductor material surface by laser energy
DE102009037112B4 (de) * 2009-07-31 2012-10-25 Carl Zeiss Laser Optics Gmbh Optisches System zum Erzeugen eines Lichtstrahls zur Behandlung eines Substrats
US8014427B1 (en) 2010-05-11 2011-09-06 Ultratech, Inc. Line imaging systems and methods for laser annealing
US9279727B2 (en) 2010-10-15 2016-03-08 Mattson Technology, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
US8026519B1 (en) 2010-10-22 2011-09-27 Ultratech, Inc. Systems and methods for forming a time-averaged line image
US8399808B2 (en) 2010-10-22 2013-03-19 Ultratech, Inc. Systems and methods for forming a time-averaged line image
US9302348B2 (en) 2011-06-07 2016-04-05 Ultratech Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
US8309474B1 (en) 2011-06-07 2012-11-13 Ultratech, Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
US8569187B2 (en) 2011-06-24 2013-10-29 Applied Materials, Inc. Thermal processing apparatus
JP5537615B2 (ja) 2011-08-10 2014-07-02 ウルトラテック インク 時間平均化ライン像を形成するシステム及び方法
US8946594B2 (en) 2011-11-04 2015-02-03 Applied Materials, Inc. Optical design for line generation using microlens array
US8546805B2 (en) 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US8501638B1 (en) 2012-04-27 2013-08-06 Ultratech, Inc. Laser annealing scanning methods with reduced annealing non-uniformities
SG195515A1 (en) 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US9558973B2 (en) 2012-06-11 2017-01-31 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
US8785815B2 (en) 2012-06-22 2014-07-22 Applied Materials, Inc. Aperture control of thermal processing radiation
US9490128B2 (en) 2012-08-27 2016-11-08 Ultratech, Inc. Non-melt thin-wafer laser thermal annealing methods
JP6252134B2 (ja) * 2013-11-28 2017-12-27 三菱電機株式会社 伝送模擬装置及び伝送模擬方法
US9343307B2 (en) 2013-12-24 2016-05-17 Ultratech, Inc. Laser spike annealing using fiber lasers
US20150343560A1 (en) * 2014-06-02 2015-12-03 Fracturelab, Llc Apparatus and method for controlled laser heating
JP6193305B2 (ja) 2014-07-29 2017-09-06 ウルトラテック インク 高性能線形成光学システム及び方法
US10083843B2 (en) 2014-12-17 2018-09-25 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
US11858065B2 (en) 2015-01-09 2024-01-02 Lsp Technologies, Inc. Method and system for use in laser shock peening and laser bond inspection process
EP3242768B8 (en) 2015-01-09 2019-10-23 LSP Technologies, Inc. Method and apparatus for use in laser shock peening processes
US9859121B2 (en) 2015-06-29 2018-01-02 International Business Machines Corporation Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure
US10665504B2 (en) 2017-07-28 2020-05-26 Veeco Instruments Inc. Laser-based systems and methods for melt-processing of metal layers in semiconductor manufacturing
KR102546719B1 (ko) 2018-09-04 2023-06-21 삼성전자주식회사 모니터링 장치 및 모니터링 방법
EP4074492B1 (de) * 2021-04-13 2023-09-20 Leister Technologies AG System zum fügen von werkstücken aus thermoplastischem kunststoff mittels laserdurchstrahlschweissen

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847850A (en) 1986-12-23 1989-07-11 Spectra-Physics, Inc. Continuum generation with miniaturized Q-switched diode pumped solid state laser
US5059013A (en) 1988-08-29 1991-10-22 Kantilal Jain Illumination system to produce self-luminous light beam of selected cross-section, uniform intensity and selected numerical aperture
US6002467A (en) * 1995-03-16 1999-12-14 Nikon Corporation Exposure apparatus and method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151008A (en) 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4154625A (en) 1977-11-16 1979-05-15 Bell Telephone Laboratories, Incorporated Annealing of uncapped compound semiconductor materials by pulsed energy deposition
US4316074A (en) 1978-12-20 1982-02-16 Quantronix Corporation Method and apparatus for laser irradiating semiconductor material
US4292093A (en) * 1979-12-28 1981-09-29 The United States Of America As Represented By The United States Department Of Energy Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces
EP0273058A4 (en) * 1986-06-09 1989-12-12 Komatsu Mfg Co Ltd NARROW BAND MULTI-MODE EXCIMER.
JPH06140704A (ja) 1992-10-26 1994-05-20 Mitsubishi Electric Corp レーザ光照射装置
JP3249606B2 (ja) * 1992-11-06 2002-01-21 株式会社半導体エネルギー研究所 レーザー処理方法並びに半導体素子およびその作製方法
JPH0810729B2 (ja) 1993-01-20 1996-01-31 日本電気株式会社 捺印機
JP3451682B2 (ja) * 1993-11-02 2003-09-29 ソニー株式会社 表面処理装置
KR100299292B1 (ko) * 1993-11-02 2001-12-01 이데이 노부유끼 다결정실리콘박막형성방법및그표면처리장치
US5519227A (en) * 1994-08-08 1996-05-21 The University Of Massachusetts Medical Center Structured scintillation screens
JP3608580B2 (ja) 1995-03-22 2005-01-12 株式会社ニコン 照明光学装置、露光装置、露光方法、及びフライアイレンズ
US5838361A (en) * 1996-01-11 1998-11-17 Micron Technology, Inc. Laser marking techniques
JPH1092722A (ja) * 1996-09-18 1998-04-10 Nikon Corp 露光装置
US5852693A (en) 1996-11-26 1998-12-22 Ultratech Stepper, Inc. Low-loss light redirection apparatus
US6090102A (en) * 1997-05-12 2000-07-18 Irvision, Inc. Short pulse mid-infrared laser source for surgery
JP3175005B2 (ja) * 1997-05-28 2001-06-11 住友重機械工業株式会社 レーザ加工装置
JPH11283933A (ja) * 1998-01-29 1999-10-15 Toshiba Corp レ―ザ照射装置，非単結晶半導体膜の製造方法及び液晶表示装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847850A (en) 1986-12-23 1989-07-11 Spectra-Physics, Inc. Continuum generation with miniaturized Q-switched diode pumped solid state laser
US5059013A (en) 1988-08-29 1991-10-22 Kantilal Jain Illumination system to produce self-luminous light beam of selected cross-section, uniform intensity and selected numerical aperture
US6002467A (en) * 1995-03-16 1999-12-14 Nikon Corporation Exposure apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015003817A1 (de) * 2013-07-12 2015-01-15 Manz Ag Vorrichtung und verfahren zum thermischen behandeln eines substrats

Also Published As

Publication number Publication date
EP1256030A4 (en) 2007-08-01
JP2012023397A (ja) 2012-02-02
EP1256030A1 (en) 2002-11-13
US6366308B1 (en) 2002-04-02
DE60041833D1 (de) 2009-04-30
EP1256030B1 (en) 2009-03-18
KR20020093805A (ko) 2002-12-16
JP2003524892A (ja) 2003-08-19
WO2001061407A1 (en) 2001-08-23
JP4921673B2 (ja) 2012-04-25

Similar Documents

Publication Publication Date Title
KR100751741B1 (ko) 레이저 열처리 장치 및 방법
US8569187B2 (en) Thermal processing apparatus
KR100931809B1 (ko) 이중 파장 열적 흐름 레이저 어닐
US7438468B2 (en) Multiple band pass filtering for pyrometry in laser based annealing systems
US9953851B2 (en) Process sheet resistance uniformity improvement using multiple melt laser exposures
JP2003524892A5 (enExample)
WO2008080099A2 (en) Laser optical system
US20090323739A1 (en) Laser optical system
CN116345288B (zh) 用于晶圆退火的co2激光自适应菲涅尔匀化装置及方法
JP2018117134A (ja) アドバンスアニールプロセスにおいて粒子を低減させる装置および方法
KR102426156B1 (ko) 이중 파장 어닐링 방법 및 장치
JP7721376B2 (ja) 不均一性の照射を最小限に抑えるためのシステムと方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20080421

Republication note text: Request for Correction Notice (Document Request)

Gazette number: 1007517410000

Gazette reference publication date: 20070827

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120727

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130723

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140722

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150717

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160720

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20170719

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20180807

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190818

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190818