KR100704323B1 - 광반도체 집적 회로 장치 및 광기억 재생 장치 - Google Patents

광반도체 집적 회로 장치 및 광기억 재생 장치 Download PDF

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Publication number
KR100704323B1
KR100704323B1 KR1020010052646A KR20010052646A KR100704323B1 KR 100704323 B1 KR100704323 B1 KR 100704323B1 KR 1020010052646 A KR1020010052646 A KR 1020010052646A KR 20010052646 A KR20010052646 A KR 20010052646A KR 100704323 B1 KR100704323 B1 KR 100704323B1
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South Korea
Prior art keywords
photodiode
layer
integrated circuit
semiconductor integrated
light
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Expired - Fee Related
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KR1020010052646A
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English (en)
Korean (ko)
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KR20020045503A (ko
Inventor
기무라시게하루
마이오겐지
도이다께시
다마끼요오이찌
시마노다께시
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20020045503A publication Critical patent/KR20020045503A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020010052646A 2000-12-07 2001-08-30 광반도체 집적 회로 장치 및 광기억 재생 장치 Expired - Fee Related KR100704323B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00373113 2000-12-07
JP2000373113A JP3974322B2 (ja) 2000-12-07 2000-12-07 光半導体集積回路装置及び光記憶再生装置

Publications (2)

Publication Number Publication Date
KR20020045503A KR20020045503A (ko) 2002-06-19
KR100704323B1 true KR100704323B1 (ko) 2007-04-09

Family

ID=18842554

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010052646A Expired - Fee Related KR100704323B1 (ko) 2000-12-07 2001-08-30 광반도체 집적 회로 장치 및 광기억 재생 장치

Country Status (3)

Country Link
US (1) US6573578B2 (enExample)
JP (1) JP3974322B2 (enExample)
KR (1) KR100704323B1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2808926B1 (fr) * 2000-05-12 2003-08-01 Thomson Csf Detecteur optique polarimetrique
JP2002359310A (ja) * 2001-05-30 2002-12-13 Matsushita Electric Ind Co Ltd 半導体装置、及びその製造方法
JP3952860B2 (ja) * 2002-05-30 2007-08-01 株式会社日立製作所 プロトコル変換装置
KR100555526B1 (ko) * 2003-11-12 2006-03-03 삼성전자주식회사 포토 다이오드 및 그 제조방법
JP2006054252A (ja) * 2004-08-10 2006-02-23 Sony Corp 固体撮像装置
EP1670066A1 (fr) * 2004-12-08 2006-06-14 St Microelectronics S.A. Procédé de fabrication d'un circuit intégré comprenant un miroir enterré et ce circuit
JP4618064B2 (ja) 2005-09-12 2011-01-26 ソニー株式会社 半導体装置およびその製造方法
KR100879013B1 (ko) * 2007-05-22 2009-01-19 (주)실리콘화일 매립형 컬렉터를 구비하는 포토트랜지스터
KR101436504B1 (ko) * 2008-01-25 2014-09-02 삼성전자주식회사 이미지 센서
JP2009277862A (ja) * 2008-05-14 2009-11-26 Sony Corp 受光素子、光ピックアップ装置、光ディスク装置および受光装置
US7927963B2 (en) 2008-08-07 2011-04-19 International Business Machines Corporation Integrated circuit structure, design structure, and method having improved isolation and harmonics
US7804151B2 (en) * 2008-08-07 2010-09-28 International Business Machines Corporation Integrated circuit structure, design structure, and method having improved isolation and harmonics
JP5387212B2 (ja) * 2009-07-31 2014-01-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
CN103493202B (zh) * 2011-05-31 2016-07-27 松下知识产权经营株式会社 固体摄像装置及其制造方法
KR102380829B1 (ko) * 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102441803B1 (ko) * 2014-09-02 2022-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
FR3027731B1 (fr) 2014-10-24 2018-01-05 Stmicroelectronics Sa Capteur d'image face avant a courant d'obscurite reduit sur substrat soi
US10418407B2 (en) 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
US12278252B2 (en) 2019-08-28 2025-04-15 Artilux, Inc. Photo-detecting apparatus with low dark current
US12477856B2 (en) * 2019-08-28 2025-11-18 Artilux, Inc. Photo-detecting apparatus with low dark current

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227988A (ja) * 1995-02-21 1996-09-03 Nec Corp 固体撮像装置およびその製造方法
KR19980032306A (ko) * 1996-10-21 1998-07-25 클라크３세존엠 실리콘 온 절연체 격리 포토다이오드
KR0168902B1 (ko) * 1993-12-09 1999-01-15 가네꼬 히사시 고체 촬상장치
KR19990077941A (ko) * 1998-03-17 1999-10-25 이데이 노부유끼 수광소자를갖는반도체장치,광학픽업장치,및수광소자를갖는반도체장치의제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1423779A (en) * 1972-02-14 1976-02-04 Hewlett Packard Co Photon isolators
JP3122118B2 (ja) 1990-07-25 2001-01-09 ソニー株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0168902B1 (ko) * 1993-12-09 1999-01-15 가네꼬 히사시 고체 촬상장치
JPH08227988A (ja) * 1995-02-21 1996-09-03 Nec Corp 固体撮像装置およびその製造方法
KR19980032306A (ko) * 1996-10-21 1998-07-25 클라크３세존엠 실리콘 온 절연체 격리 포토다이오드
KR19990077941A (ko) * 1998-03-17 1999-10-25 이데이 노부유끼 수광소자를갖는반도체장치,광학픽업장치,및수광소자를갖는반도체장치의제조방법

Also Published As

Publication number Publication date
US6573578B2 (en) 2003-06-03
JP2002176190A (ja) 2002-06-21
KR20020045503A (ko) 2002-06-19
US20020070417A1 (en) 2002-06-13
JP3974322B2 (ja) 2007-09-12

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