KR100665587B1 - 유기금속전구용액 제조방법 및 이를 이용하여유기금속증착법에 의한 박막형 산화물 초전도체 제조방법 - Google Patents
유기금속전구용액 제조방법 및 이를 이용하여유기금속증착법에 의한 박막형 산화물 초전도체 제조방법Info
- Publication number
- KR100665587B1 KR100665587B1 KR1020050039847A KR20050039847A KR100665587B1 KR 100665587 B1 KR100665587 B1 KR 100665587B1 KR 1020050039847 A KR1020050039847 A KR 1020050039847A KR 20050039847 A KR20050039847 A KR 20050039847A KR 100665587 B1 KR100665587 B1 KR 100665587B1
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- Prior art keywords
- thin film
- organometallic
- manufacturing
- oxide superconductor
- precursor solution
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 98
- 239000002243 precursor Substances 0.000 title claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 34
- 239000002184 metal Substances 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 claims abstract description 109
- 239000002887 superconductor Substances 0.000 claims abstract description 60
- 125000002524 organometallic group Chemical group 0.000 claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 claims abstract description 55
- 238000000151 deposition Methods 0.000 claims abstract description 37
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- 239000013078 crystal Substances 0.000 claims abstract description 15
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- 238000001465 metallisation Methods 0.000 claims abstract description 11
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- 238000010438 heat treatment Methods 0.000 claims description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 28
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 22
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- 238000006243 chemical reaction Methods 0.000 claims description 20
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- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000007858 starting material Substances 0.000 claims description 15
- 229910052727 yttrium Inorganic materials 0.000 claims description 14
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 claims description 13
- 229940120124 dichloroacetate Drugs 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 150000007524 organic acids Chemical class 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 7
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229940066528 trichloroacetate Drugs 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
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- 229910052693 Europium Inorganic materials 0.000 claims description 5
- 229910052689 Holmium Inorganic materials 0.000 claims description 5
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- 229910002651 NO3 Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- 229910052771 Terbium Inorganic materials 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 238000004090 dissolution Methods 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 claims description 4
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- 229910002367 SrTiO Inorganic materials 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 2
- 239000005751 Copper oxide Substances 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- 229940089960 chloroacetate Drugs 0.000 claims description 2
- FOCAUTSVDIKZOP-UHFFFAOYSA-M chloroacetate Chemical compound [O-]C(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-M 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- 235000005985 organic acids Nutrition 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 109
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 10
- 239000010408 film Substances 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 5
- 239000002131 composite material Substances 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000000843 powder Substances 0.000 description 11
- 229910052788 barium Inorganic materials 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
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- 229920000642 polymer Polymers 0.000 description 6
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 4
- 229940106681 chloroacetic acid Drugs 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 3
- 229910001863 barium hydroxide Inorganic materials 0.000 description 3
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- 150000001242 acetic acid derivatives Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
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- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
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- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 238000000053 physical method Methods 0.000 description 1
- IUGYQRQAERSCNH-UHFFFAOYSA-M pivalate Chemical compound CC(C)(C)C([O-])=O IUGYQRQAERSCNH-UHFFFAOYSA-M 0.000 description 1
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- 238000003756 stirring Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- WROMPOXWARCANT-UHFFFAOYSA-N tfa trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.OC(=O)C(F)(F)F WROMPOXWARCANT-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0324—Processes for depositing or forming copper oxide superconductor layers from a solution
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
Claims (25)
- 산화물 초전도체를 제조하기 위한 전구용액 제조방법에 있어서,출발원료를 금속염 및 금속산화물로 하고, 전기 출발원료를 유기산과 물에 혼합ㆍ교반하고, 가열하여 용해시키는 용해과정(S1)과;상기 출발원료가 완전히 용해되어 용액이 맑아지면 상기 용액이 점성이 있는 젤리 상태가 될 때까지 용매를 증발시키는 증발과정(S2)과;상기 젤리상태의 유기금속화합물을 유기용매에 녹여서 초전도 산화물 박막 제조용 전구용액을 얻는 전구용액수득과정(S3);을 포함하여 이루어짐을 특징으로 하는 유기금속전구용액 제조방법.
- 제 1항에 있어서,상기 금속염은 질산염, 탄산염, 수산화물, 염화물, 초산염으로 이루어진 군으로부터 단독 혹은 2종이상 혼합사용됨을 특징으로 하는 유기금속전구용액 제조방법.
- 제 1항에 있어서,상기 금속화합물을 REO(rare earth oxide), BaO, CuO, (RE1 x RE2 1-x)Ba2Cu3Oy, Y124, Bi-2212, Bi-2223, Tl-1234, Tl-2223, Hg-1234으로 이루어진 군으로부터 단 독 혹은 2종이상 혼합사용됨을 특징으로 하는 유기금속전구용액 제조방법.
- 제 3항에 있어서.0≤x≤1, 6.5≤y≤7이고,RE1 x과 RE2 1-x 은 Y, La, Pr, Nd, Pm, Sm, Eu. Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu 으로 이루어진 군으로부터 단독 혹은 2종이상 혼합사용됨을 특징으로 하는 유기금속전구용액 제조방법.
- 제 1항에 있어서,상기 유기산은 CA(chloroacetate), DCA(dichloroacetate), TCA(trichloroacetate)로 이루어진 군으로부터 단독 사용됨을 특징으로 하는 유기금속전구용액 제조방법.
- 제 1항에 있어서,상기 유기용매는 메틸알콜 또는 에틸알콜인 것을 특징으로 하는 유기금속전구용액 제조방법.
- 제 6항에 있어서,상기 유기용매는 10%-40%의 물을 포함됨을 특징으로 하는 유기금속전구용액 제조방법.
- 제 1항에 있어서,초전도 산화물 박막 제조용 전구용액의 금속이온 농도는 1 ~ 5몰인 것을 특징으로 하는 유기금속전구용액 제조방법.
- 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법에 있어서,양이온의 조성비가 희토류원소(RE; Rare earth element)-바륨(Barium)-구리(Copper) 산화물 초전도 박막과 같은 금속염 및 금속산화물을 출발원료로 하고, 전기 출발원료를 유기산과 물에 혼합ㆍ교반하고, 가열하여 용해시키는 용해과정(S1)과;상기 출발원료가 완전히 용해되어 용액이 맑아지면 상기 용액이 점성이 있는 젤리 상태가 될 때까지 용매를 증발시키는 증발과정(S2)과;상기 젤리상태의 유기금속화합물을 유기용매에 녹여서 초전도 산화물 박막 제조용 전구용액을 얻는 전구용액수득과정(S3)과;유기금속화합물 전구용액을 기판 위에 도포하는 도포과정(S4)과:도포된 염소를 포함하는 유기금속화합물 박막을 열처리 조건(승온속도, 변환온도, PH2O, 가스 유량, 산소 분압)을 조절함으로써 RE-Ba-Cu 산화물로 변환하는 변환과정(S5)과:최종 산소열처리를 통해 산화물초전도체 박막으로 변환시켜 77K의 자장이 가해지지 않은 상태에서 최저수치 1x105 A/cm2 이상의 통전 임계전류밀도를 갖는 산화물초전도박막이 제조되는 열처리과정(S6);을 포함하여 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 9항에 있어서,상기 변환과정에는 산화물 초전도체가 안정하게 존재할 수 있는 가장 낮은 산소분압에서 금속염소화합물 박막을 가열하는 가열단계가 포함하여 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 10항에 있어서,상기 산소분압은 100 ppm(parts per million)보다 크고 1 기압보다 작게 형성됨을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 9항 또는 10항에 있어서,상기 변환과정에서 산소를 포함하는 가스유량은 50 ~ 500 cm3/cm2ㆍmin 으로 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 9항 또는 10항에 있어서,상기 변환과정에서 산소를 포함하는 가스에는 10 ℃ ~ 100 ℃ 사이의 온도로 가열된 물을 통과시켜 가스에 습기가 포함되도록 함을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 9항 또는 10항에 있어서,상기 변환과정에서 열처리조건 중 승온속도는 695 ~ 735 ℃의 구간에서 2 ~ 400 ℃/hr의 범위 내로 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 9항 또는 10항에 있어서,상기 변환과정에서 열처리조건 중 유기금속산화물을 초전도산화물로 변환시키는 변환온도는, 715 ~ 755 ℃의 범위내에서 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 13항에 있어서,상기 변환과정에서 산소를 포함하는 가스에는 20 ℃ ~ 70 ℃ 사이의 온도로 가열된 물을 통과시켜 가스에 습기가 포함되도록 함을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 14항에 있어서,상기 변환과정에서 열처리조건 중 승온속도는 695 ~ 735 ℃의 구간에서 5 ~ 100 ℃/hr의 범위 내로 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 15항에 있어서,상기 변환과정에서 열처리조건 중 유기금속산화물을 초전도산화물로 변환시키는 변환온도는, 725 ~ 745 ℃의 범위내에서 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 9항에 있어서,상기 도포과정에서의 도포방법은, 담금, 회전, 슬롯다이, 스프레이 방식으로 이루어진 군으로부터 단독 또는 2종이상 혼합사용됨을 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 9항에 있어서,상기 도포과정에서 기판은, 유기금속화합물 전구용액이 도포되는 면이 이축 정렬된 집합조직을 갖도록 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 20항에 있어서,상기 도포과정에서 기판은, (100)<001> 방위를 갖는 단결정 세라믹으로 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 20항에 있어서,상기 도포과정에서 기판은, 금속으로 이루어짐을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 21항에 있어서,상기 (100)<001> 방위를 갖는 단결정 세라믹은, SrTiO3, LaAlO3, 지르코니아(Zirconia), 안정화 지르코니아(YSZ), MgO, CeO2, 희토류원소(rare earth element) 산화물로 이루어진 군으로부터 단독 또는 2종이상 혼합 사용됨을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 20항 또는 21항에 있어서,상기 유기금속화합물 전구용액이 도포되는 면의 세라믹은 산화물 초전도체와 본질적으로 격자상수가 정합(lattice matched)을 이루는 것을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
- 제 9항에 있어서,상기 희토류원소(rare earth element)는 Y, La, Pr, Nd, Pm, Sm, Eu. Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu으로 이루어진 군으로부터 단독 또는 둘이상 혼합 사용됨을 특징으로 하는 유기금속증착법에 의한 박막형 산화물 초전도체 제조방법.
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