KR100664332B1 - 전력 트랜지스터 디바이스 - Google Patents

전력 트랜지스터 디바이스 Download PDF

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Publication number
KR100664332B1
KR100664332B1 KR1020007004159A KR20007004159A KR100664332B1 KR 100664332 B1 KR100664332 B1 KR 100664332B1 KR 1020007004159 A KR1020007004159 A KR 1020007004159A KR 20007004159 A KR20007004159 A KR 20007004159A KR 100664332 B1 KR100664332 B1 KR 100664332B1
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KR
South Korea
Prior art keywords
sensor
location
cell
temperature
array
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Expired - Fee Related
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KR1020007004159A
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English (en)
Korean (ko)
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KR20010031207A (ko
Inventor
바커리차드제이
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
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Publication of KR20010031207A publication Critical patent/KR20010031207A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H10D89/105—Integrated device layouts adapted for thermal considerations

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020007004159A 1998-08-20 1999-08-06 전력 트랜지스터 디바이스 Expired - Fee Related KR100664332B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9818044.1 1998-08-20
GBGB9818044.1A GB9818044D0 (en) 1998-08-20 1998-08-20 Power transistor device
PCT/EP1999/005776 WO2000011720A1 (en) 1998-08-20 1999-08-06 Power transistor device

Publications (2)

Publication Number Publication Date
KR20010031207A KR20010031207A (ko) 2001-04-16
KR100664332B1 true KR100664332B1 (ko) 2007-01-02

Family

ID=10837485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007004159A Expired - Fee Related KR100664332B1 (ko) 1998-08-20 1999-08-06 전력 트랜지스터 디바이스

Country Status (6)

Country Link
US (1) US6144085A (https=)
EP (1) EP1048077A1 (https=)
JP (1) JP2002523902A (https=)
KR (1) KR100664332B1 (https=)
GB (1) GB9818044D0 (https=)
WO (1) WO2000011720A1 (https=)

Cited By (1)

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JP2018536858A (ja) * 2015-11-26 2018-12-13 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 第１温度測定素子を備える半導体デバイスおよび半導体デバイスを流れる電流を決定する方法

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US6855985B2 (en) * 2002-09-29 2005-02-15 Advanced Analogic Technologies, Inc. Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
JP3783707B2 (ja) 2003-03-19 2006-06-07 セイコーエプソン株式会社 検査素子付基板並びに電気光学装置用基板及び電気光学装置及び電子機器
DE10317466A1 (de) * 2003-04-16 2004-12-09 Robert Bosch Gmbh Elektromotor
US7187053B2 (en) * 2003-06-26 2007-03-06 International Business Machines Corporation Thermal sensing method and system
DE102004021393B4 (de) * 2004-04-30 2006-06-14 Infineon Technologies Ag Feldeffekt-Leistungstransistor
JP4829480B2 (ja) * 2004-05-10 2011-12-07 三菱電機株式会社 半導体装置
DE102004024887B4 (de) * 2004-05-19 2012-01-26 Infineon Technologies Ag Transistor mit Zellenfeld, Temperatursensor und Isolationsstruktur
DE102004063946B4 (de) * 2004-05-19 2018-03-22 Infineon Technologies Ag Transistoranordnungen mit einer in einem Trennungstrench angeordneten Elektrode
US8120135B2 (en) * 2004-05-19 2012-02-21 Infineon Technologies Ag Transistor
DE102004026233B4 (de) * 2004-05-28 2015-02-12 Infineon Technologies Ag Trenchtransistor
TWI242334B (en) * 2004-06-02 2005-10-21 Microelectronics Tech Inc Receiver signal strength indicator (RSSI) having automatic output detection circuit
JP5080721B2 (ja) * 2004-09-22 2012-11-21 株式会社リコー 半導体装置及びその半導体装置を使用したボルテージレギュレータ
WO2006108444A1 (en) * 2005-04-13 2006-10-19 Freescale Semiconductor, Inc Protection of an integrated circuit and method therefor
US7655944B1 (en) * 2005-06-03 2010-02-02 The United States Of America As Represented By The Secretary Of The Army Systems and methods for estimating thermal resistance of field effect transistor structures
JP5014646B2 (ja) * 2006-03-01 2012-08-29 三菱電機株式会社 半導体装置
US7800171B2 (en) * 2006-10-13 2010-09-21 Infineon Technologies Austria Ag Integrated circuit including a semiconductor device
DE102007020249B4 (de) * 2007-04-30 2015-01-08 Infineon Technologies Austria Ag Halbleiterbauelement, Halbleitersensorstruktur sowie Vorrichtung und Verfahren zum Herstellen eines Halbleiterbauelement
JP4357546B2 (ja) * 2007-06-07 2009-11-04 株式会社東芝 半導体装置
US7734440B2 (en) * 2007-10-31 2010-06-08 Agere Systems Inc. On-chip over-temperature detection
US8203315B2 (en) * 2008-09-30 2012-06-19 Infineon Technologies Ag System and method for temperature based control of a power semiconductor circuit
US20110051302A1 (en) 2009-08-27 2011-03-03 Infineon Technologies Ag Integrated power device and method
US8848330B2 (en) * 2011-07-29 2014-09-30 Infineon Technologies Austria Ag Circuit with a temperature protected electronic switch
CN103426916B (zh) 2012-05-14 2018-12-04 恩智浦美国有限公司 功率mosfet结构及方法
CN103489862B (zh) 2012-06-12 2018-05-22 恩智浦美国有限公司 功率mosfet电流传感结构和方法
JP2017069412A (ja) * 2015-09-30 2017-04-06 ルネサスエレクトロニクス株式会社 半導体装置
JP6638662B2 (ja) * 2017-01-24 2020-01-29 トヨタ自動車株式会社 半導体装置
US10819101B2 (en) * 2017-02-20 2020-10-27 Microsemi Corporation Over-current protection apparatus and method
DE102019102929B3 (de) 2019-02-06 2020-07-09 Infineon Technologies Ag Intelligenter Halbleiterschalter
DE102019119973B3 (de) 2019-07-24 2021-01-21 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019119975B3 (de) 2019-07-24 2021-01-21 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019119972B3 (de) 2019-07-24 2021-01-21 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019121685B4 (de) 2019-08-12 2021-03-04 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019121726A1 (de) 2019-08-13 2021-02-18 Infineon Technologies Ag Intelligenter halbleiterschalter
DE102019121795B4 (de) 2019-08-13 2022-01-20 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102019121794A1 (de) 2019-08-13 2021-02-18 Infineon Technologies Ag Intelligenter elektronischer schalter
DE102020122571B4 (de) 2020-08-28 2023-03-30 Infineon Technologies Ag Intelligenter elektronischer schalter
US10972088B1 (en) 2020-09-01 2021-04-06 Infineon Technologies Ag Temperature detection of a power switch based on paired measurements of current and voltage
US11378614B2 (en) 2020-09-01 2022-07-05 Infineon Technologies Ag Temperature detection of power switch using modulation of driver output impedance
DE102020123149A1 (de) 2020-09-04 2022-03-10 Infineon Technologies Ag Ansteuerschaltung für elektronischen schalter
US20220357211A1 (en) * 2021-05-05 2022-11-10 Mediatek Inc. Integration friendly thermal sensor
DE102022115099B4 (de) 2022-06-15 2025-05-22 Infineon Technologies Ag Intelligenter halbleiterschalter
US12556185B2 (en) 2024-05-06 2026-02-17 Infineon Technologies Ag Blanking periods for safely executing external tristate requests

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US5434443A (en) * 1992-03-20 1995-07-18 U.S. Philips Corporation Semiconductor switch including a power transistor integrated with a temperature sensor therefor
US5726481A (en) * 1995-06-30 1998-03-10 U.S. Philips Corporation Power semiconductor device having a temperature sensor

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US4931844A (en) * 1988-03-09 1990-06-05 Ixys Corporation High power transistor with voltage, current, power, resistance, and temperature sensing capability
JPH0777262B2 (ja) * 1988-04-19 1995-08-16 日本電気株式会社 縦型電界効果トランジスタ
US5444219A (en) * 1990-09-24 1995-08-22 U.S. Philips Corporation Temperature sensing device and a temperature sensing circuit using such a device
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US5336943A (en) * 1991-07-19 1994-08-09 U.S. Philips Corporation Temperature sensing circuit
US5563437A (en) * 1992-02-21 1996-10-08 Motorola, Inc. Semiconductor device having a large sense voltage
JP3982842B2 (ja) * 1993-08-18 2007-09-26 株式会社ルネサステクノロジ 半導体装置
DE19534604C1 (de) * 1995-09-18 1996-10-24 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement mit mehreren Temperatursensoren zum Schutz vor Überlastung
DE19548060A1 (de) * 1995-12-21 1997-06-26 Siemens Ag Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement mit Temperatursensor
KR100471521B1 (ko) * 1997-02-19 2006-04-21 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 온도센서회로를구비한파워반도체장치

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US5434443A (en) * 1992-03-20 1995-07-18 U.S. Philips Corporation Semiconductor switch including a power transistor integrated with a temperature sensor therefor
US5726481A (en) * 1995-06-30 1998-03-10 U.S. Philips Corporation Power semiconductor device having a temperature sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018536858A (ja) * 2015-11-26 2018-12-13 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 第１温度測定素子を備える半導体デバイスおよび半導体デバイスを流れる電流を決定する方法

Also Published As

Publication number Publication date
JP2002523902A (ja) 2002-07-30
GB9818044D0 (en) 1998-10-14
EP1048077A1 (en) 2000-11-02
KR20010031207A (ko) 2001-04-16
US6144085A (en) 2000-11-07
WO2000011720A1 (en) 2000-03-02

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