JPWO2023002767A5 - - Google Patents

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Publication number
JPWO2023002767A5
JPWO2023002767A5 JP2023536643A JP2023536643A JPWO2023002767A5 JP WO2023002767 A5 JPWO2023002767 A5 JP WO2023002767A5 JP 2023536643 A JP2023536643 A JP 2023536643A JP 2023536643 A JP2023536643 A JP 2023536643A JP WO2023002767 A5 JPWO2023002767 A5 JP WO2023002767A5
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JP
Japan
Prior art keywords
region
semiconductor device
main surface
trench
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023536643A
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English (en)
Japanese (ja)
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JPWO2023002767A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/023152 external-priority patent/WO2023002767A1/ja
Publication of JPWO2023002767A1 publication Critical patent/JPWO2023002767A1/ja
Publication of JPWO2023002767A5 publication Critical patent/JPWO2023002767A5/ja
Pending legal-status Critical Current

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JP2023536643A 2021-07-21 2022-06-08 Pending JPWO2023002767A1 (https=)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021121047 2021-07-21
JP2021121046 2021-07-21
PCT/JP2022/023152 WO2023002767A1 (ja) 2021-07-21 2022-06-08 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023002767A1 JPWO2023002767A1 (https=) 2023-01-26
JPWO2023002767A5 true JPWO2023002767A5 (https=) 2024-04-15

Family

ID=84979084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023536643A Pending JPWO2023002767A1 (https=) 2021-07-21 2022-06-08

Country Status (3)

Country Link
US (1) US20240153944A1 (https=)
JP (1) JPWO2023002767A1 (https=)
WO (1) WO2023002767A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023131415A (ja) * 2022-03-09 2023-09-22 ルネサスエレクトロニクス株式会社 半導体装置
US12471381B2 (en) * 2022-09-09 2025-11-11 Infineon Technologies Ag Rectifier device with minimized lateral coupling
DE112024000485T5 (de) * 2023-09-04 2025-10-16 Fuji Electric Co., Ltd. Halbleitervorrichtung und halbleitermodul

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4903055B2 (ja) * 2003-12-30 2012-03-21 フェアチャイルド・セミコンダクター・コーポレーション パワー半導体デバイスおよびその製造方法
US20060238186A1 (en) * 2005-04-22 2006-10-26 Fuji Electric Device Technology Co., Ltd Semiconductor device and temperature detection method using the same
US8564047B2 (en) * 2011-09-27 2013-10-22 Force Mos Technology Co., Ltd. Semiconductor power devices integrated with a trenched clamp diode
US10032728B2 (en) * 2016-06-30 2018-07-24 Alpha And Omega Semiconductor Incorporated Trench MOSFET device and the preparation method thereof
DE102017108048A1 (de) * 2017-04-13 2018-10-18 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer grabenstruktur
JP6740982B2 (ja) * 2017-08-21 2020-08-19 株式会社デンソー 半導体装置
CN111033751B (zh) * 2018-02-14 2023-08-18 富士电机株式会社 半导体装置
JP7324603B2 (ja) * 2019-03-29 2023-08-10 ローム株式会社 半導体装置
US20210202470A1 (en) * 2019-12-31 2021-07-01 Nami MOS CO., LTD. Mosfet with integrated esd protection diode having anode electrode connection to trenched gates for increasing switch speed

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