KR100654473B1 - 반도체 디바이스 - Google Patents

반도체 디바이스 Download PDF

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Publication number
KR100654473B1
KR100654473B1 KR1020017002427A KR20017002427A KR100654473B1 KR 100654473 B1 KR100654473 B1 KR 100654473B1 KR 1020017002427 A KR1020017002427 A KR 1020017002427A KR 20017002427 A KR20017002427 A KR 20017002427A KR 100654473 B1 KR100654473 B1 KR 100654473B1
Authority
KR
South Korea
Prior art keywords
layer
insulating
interconnect structure
dielectric constant
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020017002427A
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English (en)
Korean (ko)
Other versions
KR20010072980A (ko
Inventor
마스헨리쿠스지알
반두르젠마리아에이치더블유에이
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
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Filing date
Publication date
Application filed by 코닌클리즈케 필립스 일렉트로닉스 엔.브이. filed Critical 코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Publication of KR20010072980A publication Critical patent/KR20010072980A/ko
Application granted granted Critical
Publication of KR100654473B1 publication Critical patent/KR100654473B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/601Capacitive arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020017002427A 1999-06-29 2000-06-26 반도체 디바이스 Expired - Fee Related KR100654473B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP99202104.8 1999-06-29
EP99202104 1999-06-29

Publications (2)

Publication Number Publication Date
KR20010072980A KR20010072980A (ko) 2001-07-31
KR100654473B1 true KR100654473B1 (ko) 2006-12-05

Family

ID=8240379

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017002427A Expired - Fee Related KR100654473B1 (ko) 1999-06-29 2000-06-26 반도체 디바이스

Country Status (5)

Country Link
US (1) US6452272B1 (https=)
EP (1) EP1118118A1 (https=)
JP (1) JP2003503854A (https=)
KR (1) KR100654473B1 (https=)
WO (1) WO2001001485A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10109877A1 (de) * 2001-03-01 2002-09-19 Infineon Technologies Ag Leiterbahnanordnung und Verfahren zur Herstellung einer Leiterbahnanordnung
US6962835B2 (en) * 2003-02-07 2005-11-08 Ziptronix, Inc. Method for room temperature metal direct bonding
JP4389626B2 (ja) * 2004-03-29 2009-12-24 ソニー株式会社 固体撮像素子の製造方法
JP2008113018A (ja) * 2007-12-03 2008-05-15 Sony Corp 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US8916425B2 (en) * 2010-07-26 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485553A (en) 1983-06-27 1984-12-04 Teletype Corporation Method for manufacturing an integrated circuit device
JP2821830B2 (ja) 1992-05-14 1998-11-05 セイコーインスツルメンツ株式会社 半導体薄膜素子その応用装置および半導体薄膜素子の製造方法
US5656830A (en) * 1992-12-10 1997-08-12 International Business Machines Corp. Integrated circuit chip composite having a parylene coating
KR100389754B1 (ko) * 1994-11-22 2003-10-17 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체장치
EP0770267B1 (en) * 1995-05-10 2002-07-17 Koninklijke Philips Electronics N.V. Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization
US5654222A (en) * 1995-05-17 1997-08-05 Micron Technology, Inc. Method for forming a capacitor with electrically interconnected construction
US5872393A (en) * 1995-10-30 1999-02-16 Matsushita Electric Industrial Co., Ltd. RF semiconductor device and a method for manufacturing the same
DE19543540C1 (de) * 1995-11-22 1996-11-21 Siemens Ag Vertikal integriertes Halbleiterbauelement mit zwei miteinander verbundenen Substraten und Herstellungsverfahren dafür
US5914508A (en) * 1995-12-21 1999-06-22 The Whitaker Corporation Two layer hermetic-like coating process for on-wafer encapsulation of GaAs MMIC's
US5913144A (en) * 1996-09-20 1999-06-15 Sharp Microelectronics Technology, Inc. Oxidized diffusion barrier surface for the adherence of copper and method for same
US6255731B1 (en) * 1997-07-30 2001-07-03 Canon Kabushiki Kaisha SOI bonding structure
JP4538107B2 (ja) * 1998-03-02 2010-09-08 エヌエックスピー ビー ヴィ 半導体素子及び金属化層を有する絶縁層が接着剤により取付られているガラス支持体を有する半導体装置

Also Published As

Publication number Publication date
WO2001001485A3 (en) 2001-05-03
JP2003503854A (ja) 2003-01-28
EP1118118A1 (en) 2001-07-25
KR20010072980A (ko) 2001-07-31
US6452272B1 (en) 2002-09-17
WO2001001485A2 (en) 2001-01-04

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