KR100650165B1 - 레이저 묘화장치, 레이저 묘화방법 및 포토마스크의제조방법 - Google Patents

레이저 묘화장치, 레이저 묘화방법 및 포토마스크의제조방법 Download PDF

Info

Publication number
KR100650165B1
KR100650165B1 KR1020050027335A KR20050027335A KR100650165B1 KR 100650165 B1 KR100650165 B1 KR 100650165B1 KR 1020050027335 A KR1020050027335 A KR 1020050027335A KR 20050027335 A KR20050027335 A KR 20050027335A KR 100650165 B1 KR100650165 B1 KR 100650165B1
Authority
KR
South Korea
Prior art keywords
exposure
film thickness
light beam
resist film
film
Prior art date
Application number
KR1020050027335A
Other languages
English (en)
Korean (ko)
Other versions
KR20060045401A (ko
Inventor
다카히사 타죠
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20060045401A publication Critical patent/KR20060045401A/ko
Application granted granted Critical
Publication of KR100650165B1 publication Critical patent/KR100650165B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020050027335A 2004-03-31 2005-03-31 레이저 묘화장치, 레이저 묘화방법 및 포토마스크의제조방법 KR100650165B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00104082 2004-03-31
JP2004104082A JP4440688B2 (ja) 2004-03-31 2004-03-31 レーザ描画装置、レーザ描画方法及びフォトマスクの製造方法

Publications (2)

Publication Number Publication Date
KR20060045401A KR20060045401A (ko) 2006-05-17
KR100650165B1 true KR100650165B1 (ko) 2006-11-27

Family

ID=35049825

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050027335A KR100650165B1 (ko) 2004-03-31 2005-03-31 레이저 묘화장치, 레이저 묘화방법 및 포토마스크의제조방법

Country Status (4)

Country Link
JP (1) JP4440688B2 (zh)
KR (1) KR100650165B1 (zh)
CN (1) CN100465792C (zh)
TW (1) TWI279829B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007163632A (ja) * 2005-12-12 2007-06-28 Hitachi Displays Ltd 表示装置の製造方法および表示装置ならびに露光装置
JP5004283B2 (ja) * 2006-05-15 2012-08-22 Ｈｏｙａ株式会社 Ｆｐｄデバイス製造用マスクブランク、ｆｐｄデバイス製造用マスクブランクの設計方法、及び、ｆｐｄデバイス製造用マスクの製造方法
JP4274251B2 (ja) * 2007-01-24 2009-06-03 ソニー株式会社 レーザ描画方法及びレーザ描画装置
CN102566288B (zh) * 2010-12-21 2013-11-27 无锡华润上华半导体有限公司 曝光方法和系统
KR101862015B1 (ko) 2011-03-25 2018-07-04 삼성전자주식회사 노광 장치에서 노광 에너지 측정 방법
JP6682263B2 (ja) * 2015-12-25 2020-04-15 キヤノン株式会社 検出装置、露光装置および物品の製造方法
WO2022065048A1 (ja) * 2020-09-24 2022-03-31 株式会社ニコン パターン形成方法、電子デバイスの製造方法、及びパターン露光装置
CN115128912A (zh) * 2022-07-08 2022-09-30 西湖大学 一种非机械光扫描光纤光刻机

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4308586A (en) * 1980-05-02 1981-12-29 Nanometrics, Incorporated Method for the precise determination of photoresist exposure time
JPH0210821A (ja) * 1988-06-29 1990-01-16 Nec Corp 縮小投影露光方法
JPH0513292A (ja) * 1991-07-02 1993-01-22 Nikon Corp 露光装置
JPH08233555A (ja) * 1994-12-28 1996-09-13 Matsushita Electric Ind Co Ltd レジストパターンの測定方法及びレジストパターンの測定装置
JPH09128818A (ja) * 1995-11-02 1997-05-16 Sony Corp 露光装置
JPH10135112A (ja) * 1996-11-01 1998-05-22 Hitachi Ltd レジスト感光パラメータの測定方法およびそれを用いた半導体リソグラフィ方法
RU2148854C1 (ru) * 1998-08-12 2000-05-10 Воронежский государственный университет Способ контроля процесса экспонирования пленки фоторезиста
AU5261200A (en) * 1999-05-20 2000-12-12 Micronic Laser Systems Ab A method for error reduction in lithography
JP2002373843A (ja) * 2001-06-14 2002-12-26 Nec Corp 塗布装置及び塗布膜厚制御方法
US7049617B2 (en) * 2001-07-26 2006-05-23 Seiko Epson Corporation Thickness measurement in an exposure device for exposure of a film with a hologram mask, exposure method and semiconductor device manufacturing method
JP3863039B2 (ja) * 2002-03-12 2006-12-27 三洋電機株式会社 半導体製造装置および半導体装置の製造方法
JP4118585B2 (ja) * 2002-04-03 2008-07-16 Ｈｏｙａ株式会社 マスクブランクの製造方法

Also Published As

Publication number Publication date
KR20060045401A (ko) 2006-05-17
CN1677245A (zh) 2005-10-05
TWI279829B (en) 2007-04-21
CN100465792C (zh) 2009-03-04
JP4440688B2 (ja) 2010-03-24
JP2005292271A (ja) 2005-10-20
TW200540936A (en) 2005-12-16

Similar Documents

Publication Publication Date Title
KR100650165B1 (ko) 레이저 묘화장치, 레이저 묘화방법 및 포토마스크의제조방법
KR100737875B1 (ko) 노광장치
US6268906B1 (en) Exposure apparatus and exposure method
US9329504B2 (en) Method of aligning an exposure apparatus, method of exposing a photoresist film using the same and exposure apparatus for performing the method of exposing a photoresist film
CN101194208A (zh) 用于多曝光射束光刻装置的方法
KR20040111029A (ko) 화소위치 특정방법, 화상어긋남 보정방법 및 화상형성장치
US20140152969A1 (en) Lithographic apparatus and device manufacturing method
JP4729463B2 (ja) 露光装置、パーティクル検査システム、パーティクル検査方法、及びデバイス製造方法
KR20130099833A (ko) 노광장치, 노광방법, 및 표시용 패널기판의 제조방법
US6744512B2 (en) Position measuring apparatus and exposure apparatus
JP4211252B2 (ja) パターン露光方法及びその装置
JP5117250B2 (ja) 露光装置
KR20110094807A (ko) 광학 헤드의 중첩 거리 결정 방법 및 이를 이용한 디지털 노광 장치
JP3347130B2 (ja) アライメント方法
US20050133739A1 (en) Charged beam writing method and writing tool
JP5793236B2 (ja) リソグラフィにおける放射ビームスポットの位置の測定
KR20100042864A (ko) 노광장치 및 그 진직도 측정방법
JP2009210960A (ja) レーザ直接描画装置
JP2014513412A (ja) リソグラフィ装置、放射ビームスポットフォーカスを測定するための方法、及びデバイス製造方法
US20230221615A1 (en) Device and method for controlling focus of a laser beam
KR20080114423A (ko) 전자빔 리소그래피 장비의 포토마스크 위치 보정 장치
CN115668064A (zh) 偏移对准方法和显微光刻印刷装置
JPH05166695A (ja) 位置検出方法及びそれを用いた露光装置
JPH01179320A (ja) 荷電ビーム露光装置のビーム位置補正方法
JPH11271983A (ja) レーザビーム露光マーキング装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121114

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20131031

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee