TW200540936A - Laser plotting device, laser plotting method, and method of manufacturing photomask - Google Patents

Laser plotting device, laser plotting method, and method of manufacturing photomask Download PDF

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Publication number
TW200540936A
TW200540936A TW094109733A TW94109733A TW200540936A TW 200540936 A TW200540936 A TW 200540936A TW 094109733 A TW094109733 A TW 094109733A TW 94109733 A TW94109733 A TW 94109733A TW 200540936 A TW200540936 A TW 200540936A
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Taiwan
Prior art keywords
exposure
film thickness
light beam
resist film
film
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TW094109733A
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Chinese (zh)
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TWI279829B (en
Inventor
Takahisa Tazoe
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Hoya Corp
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Publication of TWI279829B publication Critical patent/TWI279829B/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70608Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The object of the present invention is to provide a laser plotting device, having the advantages that the productivity will not be lowered even when an object to be exposed having a resist film (photosensitive resin film) formed on the surface thereof is a large photomask or the like, the optimal amount of exposure can be set in accordance with the variation in the thickness of resist film in a small area, and the plotted pattern comprising fine patterns will not be influenced by the variation in the thickness of resist film so that the plotting of pattern can be well performed. The laser plotting device of the present invention comprises a plotting head 1 for irradiating the exposure light onto the object to be exposed 101, a scanning means 5 for moving the position irradiated by the exposure light R on the object to be exposed 101, a means for measuring the film thickness 24 for measuring the thickness of the resist film 102 according to the reflected light of the exposure light R from the object to be exposed 101, and a modulating means 4 for modulating the intensity of the exposure light according to the pattern to be plotted as set in advance and the measurement result of the means for measuring the film thickness 24.

Description

200540936 九、發明說明: 【發明所屬之技術領域】 本發明係有關於對於半導體晶圓,液晶顯示裝置(L C D ) 用或光罩用之基板,光碟用基板等之例如在表面部形成有 抗蝕劑膜(感光性樹脂膜)之曝光對象物,照射曝光用光 束,藉以描繪指定之描繪圖案的雷射描繪裝置,雷射描繪 方法和光罩之製造方法。 【先前技術】200540936 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a semiconductor wafer, a substrate for a liquid crystal display (LCD) or a photomask, a substrate for an optical disk, and the like, for example, with a surface formed with a resist. The exposure object of the agent film (photosensitive resin film) is irradiated with an exposure light beam, and a laser drawing device, a laser drawing method, and a manufacturing method of a photomask for drawing a designated drawing pattern. [Prior art]

先前提案有雷射描繪裝置,其係對於半導體晶圓,液晶 顯示裝置(LCD)用或光罩用之基板,光碟用基板等之例如在 表面部形成有抗蝕劑膜(感光性樹脂膜)之曝光對象物,描 繪指定之描繪圖案。 另外,在專利文獻1揭示有雷射描繪裝置,其中使用雷 射描繪裝置在大型光罩等之基板描繪指定之描繪圖案,預 先收集用以預測在描繪圖案發生應變之資訊,根據該資訊 預測應變,作成用以減小該應變之校正映像,根據該校正 映像進行圖案描繪。 在該雷射描繪裝置中,收集抗蝕劑膜之厚度不均資訊, 作為預測在描繪圖案發生應變用之資訊。抗蝕劑膜之厚度 不均之測量係使用接觸式膜厚測量機進行。抗蝕劑膜之厚 度不均資訊之收集是經由對虛擬基板塗布抗蝕劑,在該虛 擬基板之多個位置,利用接觸式膜厚測量機,進行抗I虫劑 膜之膜厚之測量。 在抗蝕劑膜之膜厚不均超過特定範圍時,調整抗蝕劑塗 5 312XP/發明說明書(補件)/94-07/94109733A laser drawing device has been previously proposed, and a resist film (photosensitive resin film) is formed on a surface portion of a semiconductor wafer, a substrate for a liquid crystal display device (LCD) or a photomask, and a substrate for an optical disk, for example. The exposure object is drawn with a designated drawing pattern. In addition, Patent Document 1 discloses a laser drawing device in which a specified drawing pattern is drawn on a substrate such as a large mask using the laser drawing device, and information for predicting strain in the drawing pattern is collected in advance, and the strain is predicted based on the information. , Make a correction image to reduce the strain, and perform pattern drawing based on the correction image. In this laser drawing device, information on uneven thickness of the resist film is collected as information for predicting strain in the drawing pattern. The thickness of the resist film is measured using a contact-type film thickness measuring machine. The information on the thickness unevenness of the resist film is collected by applying a resist to a dummy substrate, and measuring the film thickness of the anti-I insecticide film by using a contact-type film thickness measuring machine at a plurality of locations on the dummy substrate. When the uneven thickness of the resist film exceeds a specific range, adjust the resist coating 5 312XP / Invention Specification (Supplement) / 94-07 / 94109733

200540936 膜器(抗蝕劑塗布裝置),變更塗布條件,再度對虛擬基 塗布抗蝕劑,使膜厚不均收歛在特定之範圍内。 另外,校正映像之作成是依照在描繪圖案之各個位置 抗蝕劑膜之厚度不均之資訊,校正描繪圖案之線幅,藉 決定描繪圖案之各個位置之曝光量(劑量)之校正量。 對於實際進行曝光之基板,利用與虛擬基板同樣之 件,塗布抗蝕劑膜,根據校正映像,校正曝光量(劑量) 同時進行與指定之描繪圖案對應之曝光。 [專利文獻1 ] 日本專利特表2 0 0 3 - 5 0 0 8 4 7號公報 【發明内容】 (發明所欲解決之問題) 但是,在上述雷射描繪裝置中,與實際進行曝光之基 分開地,因為必需對虛擬基板塗布抗蝕劑,測量抗蝕劑 之膜厚,所以生產性會降低。特別是對於四角形基板中 少有一邊為300mm以上之大型光罩,對該光罩之全面進 抗蝕劑膜之膜厚之測量時,會使生產性顯著降低。 但是,在只對虛擬基板之數個位置進行抗蝕劑膜之膜 測量時,會使曝光量之校正精確度降低。在此種情況, 於微小區域之抗蝕劑膜之膜厚變動未設定最佳曝光量, 於包含微細圖案之描繪圖案,會受抗蝕劑膜之膜厚變化 影響,因而產生品質劣化。 本發明針對上述之實情而提案,提供即使在表面部形 有抗蝕劑膜(感光性樹脂膜)之曝光對象物為大型光罩等 型者之情況時,亦不會使生產性降低,而且對於微小區 312XP/發明說明書(補件)/94-07/94109733 板 之 以 條 板 膜 至 行 厚 對 對 之 成 大 域 6 200540936 之抗蝕劑膜之膜厚變動,亦可設定最佳曝光量,對於包含 微細圖案之描繪圖案,亦不會受到抗蝕劑膜之膜厚變化之 影響,可以進行良好之描繪圖案之描繪的雷射描繪裝置, 雷射描繪方法及光罩之製造方法。 (解決問題之手段) 用以解決上述問題之本發明之雷射描繪裝置具備有下述 構造。 [構造1 ]200540936 Membrane device (resist coating device), changing the coating conditions, and then coating the dummy substrate with a resist again, so that the uneven film thickness converges within a specific range. In addition, the correction image is created based on the information on the uneven thickness of the resist film at each position of the drawing pattern, and the line width of the drawing pattern is corrected to determine the correction amount of the exposure amount (dose) at each position of the drawing pattern. For the substrate actually exposed, a resist film is applied using the same material as the dummy substrate, and the exposure amount (dose) is corrected based on the correction image, and the exposure corresponding to the designated drawing pattern is performed at the same time. [Patent Document 1] Japanese Patent Publication No. 2 0 3-5 0 8 4 7 [Summary of the Invention] (Problems to be Solved by the Invention) However, in the above-mentioned laser drawing device, the basis for actual exposure Separately, since it is necessary to apply a resist to the dummy substrate and measure the film thickness of the resist, the productivity is lowered. Especially for a large-sized photomask having one side of 300 mm or more in a quadrangular substrate, the measurement of the thickness of the resist film on the entire surface of the photomask significantly reduces the productivity. However, when the resist film is measured on only a few positions of the dummy substrate, the accuracy of the exposure amount correction is reduced. In this case, the optimum exposure amount is not set for the film thickness variation of the resist film in the micro area, and the drawing pattern including the fine pattern is affected by the film thickness variation of the resist film, and thus the quality is deteriorated. The present invention has been proposed in view of the above-mentioned facts, and does not reduce productivity even when the object to be exposed with a resist film (photosensitive resin film) on the surface is a large photomask or the like. For the micro area 312XP / Invention Specification (Supplement) / 94-07 / 94109733, the thickness of the strip film to the thickness of the resist film is large. 6 200540936 The film thickness variation of the resist film can also set the optimal exposure. For drawing patterns containing fine patterns, the laser drawing device, laser drawing method, and mask manufacturing method that can perform good drawing pattern drawing will not be affected by the change in film thickness of the resist film. (Means for Solving the Problems) The laser drawing device of the present invention for solving the above problems has the following structure. [Structure 1]

本發明之雷射描繪裝置,其特徵在於具備有:描繪頭,用 來使曝光用光束照射在表面部形成有抗蝕劑膜之曝光對象 物;掃描手段,在曝光對象物上,使曝光用光束之照射位 置移動;調變手段,用來調變曝光用光束之強度;和膜厚 測量手段,根據來自曝光對象物之曝光用光束之反射光 束,測量抗蝕劑膜之膜厚;調變手段根據預先設定之描繪 圖案和膜厚測量手段之測量結果,調變曝光用光束之強度。 [構造2 ] 本發明之雷射描繪裝置,其特徵在於具備有:描繪頭,用 來使曝光用光束照射在表面部形成有抗蝕劑膜之曝光對象 物;光學頭,用來對曝光對象物照射膜厚測量用光束;掃 描手段,在曝光對象物上,使曝光用光束和膜厚測量用光 束之照射位置移動;調變手段,用來調變曝光用光束之強 度;和膜厚測量手段,根據來自曝光對象物之膜厚測量用 光束之反射光束,測量抗蝕劑膜之膜厚;膜厚測量用光束, 對曝光對象物之被曝光用光束照射之位置,比該曝光用光 7 312XP/發明說明書(補件)/94-07/94109733 200540936 束先照射;調變手段根據預先設定之描繪圖案和膜厚測量 手段之測量結果,調變曝光用光束之強度。 [構造3 ] 本發明之特徵在於構造2之雷射描繪裝置中,使曝光對 象物上之曝光用光束之照射位置,和曝光對象物上之膜厚 測量用光束之照射位置之間隔,成為1 〇 m m以下。 [構造4 ]The laser drawing device of the present invention is characterized by comprising: a drawing head for irradiating an exposure target with a resist film formed on the surface portion with an exposure light beam; and a scanning means for exposing the exposure target to the exposure target. The irradiation position of the light beam is moved; the modulation means is used to adjust the intensity of the exposure beam; and the film thickness measurement means is used to measure the film thickness of the resist film based on the reflected light beam from the exposure beam of the exposure object; The means adjusts the intensity of the light beam for exposure according to a preset drawing pattern and a measurement result of a film thickness measuring means. [Structure 2] The laser drawing device of the present invention includes a drawing head for irradiating an exposure target with a resist film formed on a surface portion by an exposure light beam, and an optical head for the exposure target. Beam irradiation for measuring the thickness of a film; Scanning means to move the irradiation positions of the exposure beam and the film for measuring the thickness of the beam on the object to be exposed; Modulation means for adjusting the intensity of the beam for exposure; and film thickness measurement Means to measure the film thickness of the resist film based on the reflected light beam from the film thickness measurement light beam of the exposure target; the film thickness measurement light beam irradiates the position of the exposure target by the exposure light beam, which is lighter than the exposure light 7 312XP / Invention Manual (Supplement) / 94-07 / 94109733 200540936 First beam irradiation; the modulation means adjusts the intensity of the exposure beam according to the measurement results of the preset drawing pattern and film thickness measurement means. [Structure 3] The present invention is characterized in that in the laser drawing device of Structure 2, the interval between the irradiation position of the exposure beam on the exposure object and the irradiation position of the film thickness measurement beam on the exposure object is set to 1 〇mm or less. [Structure 4]

本發明之雷射描繪方法,其特徵在於所具備之步驟包含 有:利用描繪頭對在表面部形成有抗蝕劑膜之曝光對象物 照射曝光用光束;使曝光對象物上之曝光用光束之照射位 置移動;根據來自曝光對象物之曝光用光束之反射光束, 測量抗蝕劑膜之膜厚;和根據預先設定之描繪圖案和抗蝕 劑膜之膜厚之測量結果,調變曝光用光束之強度。 [構造5 ] 本發明之雷射描繪方法,其特徵在於所具備之步驟包含 有:利用描繪頭對在表面部形成有抗蝕劑膜之曝光對象物 照射曝光用光束,和對曝光對象物照射膜厚測量用光束; 在曝光對象物上,對於被曝光用光束照射之位置,以膜厚 測量用光束比該曝光用光束先照射之方式,使曝光對象物 上之曝光用光束和膜厚測量用光束之照射位置移動;根據 來自曝光對象物之膜厚測量用之反射光束,測量抗蝕劑膜 之膜厚;和根據預先設定之描繪圖案和抗蝕劑膜之膜厚之 測量結果,調變曝光用光束之強度。 [構造6 ] 8 312XP/發明說明書(補件)/94-07/94109733 200540936 本發明之光罩之製造方法,其特徵在於所具備之步驟包 含有:利用描繪頭對在表面部具有抗蝕劑膜之光罩胚料照 射曝光用光束;使光罩胚料上之曝光用光束之照射位置移 動;根據來自光罩胚料之曝光用光束之反射光束,測量抗 蝕劑膜之膜厚;和根據預先設定之描繪圖案和抗蝕劑膜之 膜厚之測量結果,調變曝光用光束之強度。 [構造7 ]The laser drawing method of the present invention is characterized in that the method includes the steps of: irradiating an exposure object with an exposure object having a resist film formed on a surface portion by using a drawing head; and exposing the exposure beam on the exposure object. The irradiation position moves; the thickness of the resist film is measured based on the reflected light beam from the exposure beam of the exposure object; and the exposure light beam is adjusted based on the measurement results of the preset pattern and the thickness of the resist film The intensity. [Structure 5] The laser drawing method of the present invention is characterized in that the method includes the steps of irradiating an exposure object with an exposure beam having a resist film formed on a surface portion by using a drawing head, and irradiating the exposure object. Film thickness measurement beam; on the exposure object, for the position irradiated by the exposure beam, the exposure beam and film thickness are measured on the exposure object in such a way that the film thickness measurement beam is irradiated before the exposure beam. Move with the irradiation position of the light beam; measure the film thickness of the resist film based on the reflected light beam for measuring the film thickness of the exposed object; and adjust the measurement result of the predetermined thickness of the drawing pattern and the film thickness of the resist film. Change the intensity of the exposure beam. [Structure 6] 8 312XP / Invention Specification (Supplement) / 94-07 / 94109733 200540936 The manufacturing method of the photomask of the present invention is characterized in that the steps include: using a drawing head to have a resist on the surface portion The mask blank of the film irradiates the exposure beam; moving the irradiation position of the exposure beam on the mask blank; measuring the film thickness of the resist film based on the reflected beam from the exposure beam of the mask blank; and The intensity of the light beam for exposure is adjusted according to a predetermined measurement result of the drawing pattern and the film thickness of the resist film. [Structure 7]

本發明之光罩之製造方法,其特徵在於所具備之步驟包 含有:利用描繪頭對在表面部具有抗蝕劑膜之光罩胚料照 射曝光用光束,和對光罩胚料照射膜厚測量用光束;在光 罩胚料上,對於被曝光用光束照射之位置,以膜厚測量用 光束比該曝光用光束先照射之方式,使光罩胚料上之曝光 用光束和膜厚測量用光束之照射位置移動;根據來自光罩 胚料之膜厚測量用光束之反射光束,測量抗蝕劑膜之膜 厚;和根據預先設定之描繪圖案和抗蝕劑膜之膜厚之測量 結果,調變曝光用光束之強度。 (發明效果) 在本發明之雷射描繪裝置中,對於利用描繪頭對在表面 部形成有抗蝕劑膜之曝光對象物照射之曝光用光束之強度 進行調變之調變手段係因根據:預先設定之描繪圖案;和依 據來自曝光對象物之曝光用光束之反射光束,測量抗蝕劑 膜之膜厚之膜厚測量手段之測量結果,調變曝光用光束之 強度;故不需要使用虛擬基板,可以根據曝光用光束,即時 地測量抗餘劑膜之膜厚,和可以利用曝光用光束進行描繪。 9 3】2XP/發明說明書(補件)/94-07/94 ] 09733 200540936 因此,在該雷射描繪裝置中,在描繪前不需要膜厚測量 作業,描繪作業所需要之時間可以縮短。另外,在該雷射 描繪裝置中,因為使用曝光用光束測量抗蝕劑膜之膜厚, 所以不需要裝載其他之雷射光源,可以使構造簡化。The manufacturing method of the photomask of the present invention is characterized by comprising the steps of irradiating an exposure light beam to a photomask blank having a resist film on a surface portion with a drawing head, and irradiating the photomask blank with a film thickness. Measurement beam; on the mask blank, for the position irradiated by the exposure beam, the exposure beam and film thickness on the mask blank are measured in such a way that the film thickness measurement beam is irradiated before the exposure beam. Move with the irradiation position of the light beam; measure the film thickness of the resist film based on the reflected light beam of the beam thickness measurement film from the mask blank; and measure the film thickness of the resist film based on the preset pattern and the thickness of the resist film , To adjust the intensity of the exposure beam. (Effects of the Invention) In the laser drawing device of the present invention, the modulation means for adjusting the intensity of the exposure light beam irradiated by the drawing head to the exposure object having the resist film formed on the surface portion is based on: Pre-set drawing pattern; and the result of measuring the thickness of the resist film based on the reflected beam from the exposure beam of the exposure object, and measuring the thickness of the resist film to adjust the intensity of the exposure beam; The substrate can measure the film thickness of the anti-remnant film in real time based on the exposure light beam, and can be drawn using the exposure light beam. 9 3] 2XP / Invention Manual (Supplement) / 94-07 / 94] 09733 200540936 Therefore, in this laser drawing device, no film thickness measurement work is required before drawing, and the time required for drawing work can be shortened. In addition, in this laser mapping device, since the film thickness of the resist film is measured using an exposure light beam, there is no need to mount another laser light source, and the structure can be simplified.

另外,在本發明之雷射描繪裝置中,對於利用描繪頭對 在表面部形成有抗蝕劑膜之曝光對象物照射之曝光用光束 之強度進行調變之調變手段係因根據:預先設定之描繪圖 案;和依據來自曝光對象物之膜厚測量用光束之反射光 束,測量抗蝕劑膜之膜厚之膜厚測量手段之測量結果,調 變曝光用光束之強度;故不需要使用虛擬基板,可以根據 曝光用光束,即時地測量抗蝕劑膜之膜厚,並可以利用曝 光用光束進行描繪。 因此,在該雷射描繪裝置中,在描繪前不需要膜厚測量 作業,描繪作業所需要之時間可以縮短。 另外,在該雷射描繪裝置中,經由使曝光對象物上之曝 光用光束之照射位置,和曝光對象物上之膜厚測量用光束 之照射位置之間隔成為1 0 m m以下,對於利用曝光用光束進 行描繪之位置,可以進行正確之抗蝕劑膜之膜厚測量。 亦即,本發明可以提供雷射描繪裝置,其係即使在表面 部形成有抗蝕劑膜(感光性樹脂膜)之曝光對象物為大型光 罩等大型者之情況時,亦不會使生產性降低,而且對於微 小區域之抗蝕劑膜之膜厚變動亦可以設定最佳曝光量,對 於包含微細圖案之描繪圖案亦不會受抗蝕劑膜之膜厚變化 之影響,可以進行良好之描繪圖案之描繪。 10 312XP/發明說明書(補件)/94-07/94109733 200540936 【實施方式】 下面參照圖式說明本發明之實施形態。 (雷射描繪裝置之第1實施形態) 本發明之雷射裝置是在製造光罩等時,在抗蝕劑上描繪 所希望之圖案之裝置。 該雷射描繪裝置如圖1所示,其構成具備有:描繪頭1 ; 光源3,用來將光束射入到該描繪頭1之射出透鏡2 ;調變 元件4,作為調變手段,用來調變從該光源3射出之曝光 ® 用光束R之強度;偏轉元件5,作為掃描手段,用來使該 曝光用光束R之光路偏轉;和移動載物台6,作為掃描手 段,用來支持可移動操作之被射出透鏡2射出之光束照射 之成為曝光對象物之基板1 0 1。 基板1 0 1是光罩等之製造所使用光罩胚料,在表面部塗 布抗蝕劑(感光性樹脂)藉以形成抗蝕劑膜 1 0 2,利用雷射 束等對該抗蝕劑膜1 0 2描繪所希望之圖案。In addition, in the laser drawing device of the present invention, the adjusting means for adjusting the intensity of the exposure light beam irradiated by the drawing head to the exposure target having the resist film formed on the surface portion is based on: preset Draw the pattern; and adjust the intensity of the light beam for exposure based on the measurement result of the film thickness measurement method for measuring the thickness of the resist film based on the reflected light beam from the light beam for measuring the thickness of the exposure object; The substrate can measure the thickness of the resist film in real time based on the exposure light beam, and can be drawn using the exposure light beam. Therefore, in this laser drawing device, a film thickness measurement operation is not required before the drawing, and the time required for the drawing operation can be shortened. In addition, in this laser drawing device, the interval between the irradiation position of the exposure beam on the exposure target and the irradiation position of the film thickness measurement beam on the exposure target is set to 10 mm or less. The position where the light beam is drawn allows accurate film thickness measurement of the resist film. That is, the present invention can provide a laser drawing device that does not cause production even when a large object such as a large-size mask is used as an exposure target in which a resist film (photosensitive resin film) is formed on a surface portion. The performance is reduced, and the optimal exposure amount can be set for the change in the thickness of the resist film in a small area. The drawing pattern including the fine pattern is not affected by the change in the thickness of the resist film. Draw a picture of the pattern. 10 312XP / Invention Specification (Supplement) / 94-07 / 94109733 200540936 [Embodiment] The embodiment of the present invention will be described below with reference to the drawings. (First Embodiment of Laser Drawing Device) The laser device of the present invention is a device for drawing a desired pattern on a resist when manufacturing a photomask or the like. This laser drawing device is shown in FIG. 1 and has the following components: a drawing head 1; a light source 3 for emitting a light beam to an exit lens 2 of the drawing head 1; and a modulation element 4 as a modulation means. To adjust the intensity of the exposure light beam R emitted from the light source 3; the deflection element 5 is used as a scanning means to deflect the light path of the exposure light beam R; and the moving stage 6 is used as a scanning means to The substrate 1 0 1 which becomes the object of exposure is irradiated with the light beam emitted from the emitting lens 2 which supports the movable operation. The substrate 1 01 is a photomask blank used for the manufacture of a photomask, etc., and a resist (photosensitive resin) is applied on the surface to form a resist film 102, and the resist film is formed by a laser beam or the like. 1 0 2 Draw the desired pattern.

該雷射描繪裝置之描繪頭1如圖2所示,具備有:射出透 鏡2,朝向下方射出曝光用光束R;和基座部7,用來支持 該射出透鏡。該描繪頭1在雷射描繪裝置,經由滑動器8 被支持成為可以上升和下降。該描繪頭1在該雷射描繪裝 置之動作時,朝向成為曝光對象物之基板 101 之表面下 降,成為接近該表面,利用掃描手段,進行對基板1 0 1在 水平方向相對移動之動作。亦即,該描繪頭1係對基板1 0 1 之表面,經由極狹之一定空隙成為面對,在水平方向移動, 同時從該基板1 0 1之表面上方,照射曝光用光束R。 11 312XP/發明說明書(補件)/94-07/94109733As shown in Fig. 2, the drawing head 1 of the laser drawing device is provided with an exit lens 2 to emit an exposure light beam R downward, and a base portion 7 for supporting the exit lens. This drawing head 1 is supported by a laser drawing device via a slider 8 so as to be able to rise and fall. In the operation of the laser drawing device, the drawing head 1 descends toward the surface of the substrate 101 to be an exposure target, approaches the surface, and relatively moves the substrate 101 in a horizontal direction by scanning means. That is, the drawing head 1 faces the surface of the substrate 1 0 1 through a narrow narrow gap and moves in the horizontal direction. At the same time, the exposure beam R is irradiated from above the surface of the substrate 1 0 1. 11 312XP / Invention Specification (Supplement) / 94-07 / 94109733

200540936 另外,描繪頭1和基板1 01之水平方向之相對移動係 由利用移動載物台6使基板1 0 1在水平方向移動操作而 行,但是其進行亦可以經由利用支持滑動器8之移動載 台9使描繪頭1移動。 另外,該描繪頭具備有一機構作為用來將與基板1 0 1 面之間之空隙維持在一定之手段,當朝向基板 1 0 1下 時,對該基板1 01喷射空氣流。在該描繪頭1,使朝向 板1 0 1喷射之空氣流壓力和本身重量平衡,進行飄浮, 來使與基板1 〇〗之間之空隙維持一定。亦即,該描繪頭 在雷射描繪裝置之動作時,利用本身之重量朝向基板 1 下降,和利用從下面部朝向基板1 0 1噴射之空氣流壓力 進行飄浮之動作。在該描繪頭1,利用朝向基板101喷 之空氣流壓力所造成之與基板1 0 1之飄浮間隔係為提高 像能力或檢查能力,成為1 0 // m至數1 0 0 // m程度之極短 隔。 光源3可以使用例如發出波長4 4 2 n m之光束之H e - C a 射等。從該光源3發出之曝光用光束R,如圖1所示, 入到調變元件 4,透過該調變元件4進行強度調變。該 變元件4被調變驅動器1 0驅動,用來調變穿透之曝光用 束R之強度。 對調變驅動器1 0供給經由資料輸入裝置1 1,資料處 裝置1 2,記憶器1 3和資料讀出裝置1 4之資料。資料輸 裝置1 1輸入與對基板1 0 1上之抗蝕劑膜1 〇 2描繪之指定 案對應之資料。該資料輸入裝置1 1輸入之資料,發送到 312XP/發明說明書(補件)/94-07/94109733 經 進 物 表 降 基 用 1 0 1 射 解 間 雷 射 調 光 理 入 圖 資 12 200540936 料處理裝置 1 2,作為與被描繪之圖案對應之位置資料(X Y 座標資料)和強度資料進行處理。在資料處理裝置1 2中被 處理之資料,儲存在記憶器1 3,利用資料讀出裝置1 4從 該記憶器1 3讀出,將其發送到調變驅動器1 0。 另夕卜,資料讀出裝置1 4和調變驅動器1 0被控制器1 5 控制,根據從時脈產生器1 6輸出之時脈進行動作。200540936 In addition, the horizontal movement of the head 1 and the substrate 101 in the horizontal direction is described by moving the substrate 101 in the horizontal direction using the moving stage 6. However, the movement can also be performed by using the support slider 8. The stage 9 moves the drawing head 1. In addition, the drawing head is provided with a mechanism for maintaining a certain distance between the surface of the substrate 101 and the substrate 101, and when the substrate is directed toward the substrate 101, an air flow is sprayed onto the substrate 101. In this drawing head 1, the pressure of the air flow sprayed toward the plate 101 is balanced with its own weight, and the floating is performed so as to maintain a constant gap with the substrate 100. That is, the drawing head is lowered toward the substrate 1 by its own weight during the operation of the laser drawing device, and floats by the pressure of the air flow sprayed from the lower portion toward the substrate 101. In this drawing head 1, the floating distance from the substrate 101 caused by the pressure of the air flow sprayed toward the substrate 101 is in the range of 1 0 // m to the number 1 0 0 // m in order to improve the image capability or inspection capability. Very short. As the light source 3, for example, He-Ca emission from a light beam with a wavelength of 4 4 2 n m can be used. The exposure light beam R emitted from the light source 3 enters the modulation element 4 as shown in FIG. 1, and the intensity modulation is performed through the modulation element 4. The variable element 4 is driven by a modulation driver 10 for adjusting the intensity of the penetrating exposure beam R. The modulation driver 10 is supplied with data via a data input device 11, a data processing device 12, a memory 13 and a data reading device 14. The data input device 11 inputs data corresponding to a designation drawn on the resist film 102 on the substrate 101. The data entered by the data input device 11 is sent to 312XP / Invention Manual (Supplement) / 94-07 / 94109733, which can be used to lower the base of the material table, and use 1 0 1 laser dimming to adjust the photo data. 12 200540936 Material processing The device 12 processes the position data (XY coordinate data) and intensity data corresponding to the drawn pattern. The data processed in the data processing device 12 is stored in the memory 13 and read out from the memory 13 by the data reading device 14 and sent to the modulation driver 10. In addition, the data reading device 14 and the modulation driver 10 are controlled by the controller 15 and operate according to the clock output from the clock generator 16.

另外,被調變元件4進行過強度調變之曝光用光束R, 射入到偏轉元件5,透過該偏轉元件5使射出方向偏轉。 該偏轉元件5可以使用例如音響一光學變換元件,被掃描 電路17驅動,用來使穿透之曝光用光束R之光路以一定週 期偏轉。 掃描電路1 7藉由被控制器1 5所控制之X Y控制器1 8控 制,根據從時脈產生器1 6輸出之時脈進行動作。 被偏轉元件5偏轉射出方向之曝光用光束R,射入到射 出透鏡2,被聚光和照射在基板1 0 1上之抗蝕劑膜1 0 2。依 照此種方式,照射在基板1 0 1上之曝光用光束R,以一定 週期偏轉,和依照描繪在基板1 0 1上之圖案被強度調變。 另外,X Y控制器1 8經由伺服機構1 9、2 0、2 1、2 2,驅 動移動載物台6,如圖1中之箭頭X和箭頭Y所示,以指 定週期使基板1 0 1在水平方向進行移動操作,用來使該基 板1 0 1和描繪頭1相對移動。 本實施形態所使用之描繪方式是一般被稱為光柵掃描方 式。光柵掃描方式如圖3所示,曝光用光束R對基板1 01 上之描繪區域全面進行掃描,到達圖案部份時,使曝光用 13 312XP/發明說明書(補件)/9107/94109733In addition, the exposure light beam R subjected to the intensity modulation by the modulation element 4 is incident on the deflection element 5 and passes through the deflection element 5 to deflect the emission direction. The deflection element 5 can use, for example, an acoustic-optical conversion element and is driven by the scanning circuit 17 to deflect the optical path of the penetrating exposure light beam R at a certain period. The scanning circuit 17 is controlled by the X Y controller 18 controlled by the controller 15 and operates according to the clock output from the clock generator 16. The exposure light beam R deflected by the deflection element 5 in the emission direction is incident on the emission lens 2 and is condensed and irradiated on the substrate 1 101 with a resist film 102. In this way, the exposure light beam R irradiated on the substrate 101 is deflected at a certain period, and the intensity is adjusted in accordance with the pattern drawn on the substrate 101. In addition, the XY controller 18 drives the moving stage 6 through the servo mechanisms 19, 20, 21, and 22, as shown by the arrow X and the arrow Y in FIG. 1, and makes the substrate 1 0 1 at a specified cycle. A moving operation is performed in the horizontal direction to move the substrate 101 and the drawing head 1 relatively. The drawing method used in this embodiment is generally called a raster scan method. The raster scan method is shown in Fig. 3. The exposure beam R scans the entire drawing area on the substrate 1 01. When it reaches the pattern portion, the exposure is used. 13 312XP / Invention Manual (Supplement) / 9107/94109733

200540936 光束R之強度上升到指定值(變成0 N ),在非圖案部份 至指定值(變成OFF)。 為掃描描繪區域全面,曝光用光束R之掃描是在一 間(曝光用光束R之Y方向掃描單位)朝向Y方向掃描 完成朝向Y方向之1區間之掃描時,該曝光用光束R 方向傳送一距離(曝光用光束R之X方向傳送單位), 離使該曝光用光束R掃描過區域之鄰接區域,成為下 曝光用光束R掃描之區域,重複此種動作。在完成該 之描繪時,將曝光用光束R傳送到下一行,重複同樣 描,藉以掃描描繪區域全面。 在將曝光用光束R傳送到下一行時,所使用之方式 Y方向掃描單位間設置稍微重疊部份,鄰接傳送之方5 路徑描繪方式),或為進行多量曝光,以重疊指定量地 Y方向掃描單位之方式(多路徑描繪方式)。 另外,一般Y方向之曝光用光束R之掃描係利用曝 光束R之偏轉進行,X方向之曝光用光束R之移動係 載物台之移動進行。 依照此種方式,重複進行被調變元件4強度調變過 光用光束R在基板1 0 1上之掃描,和利用移動載物台 基板1 0 1之移動,用來在基板1 0 1上進行被輸入裝: 輸入之指定圖案之描繪。另外,利用此種方式進行之 速度,例如為每分鐘300mm2至1500mm2左右。 另外,該雷射描繪裝置具備有膜厚測量手段,根據 曝光對象物之基板101之曝光用光束R之反射光束, 312XP/發明說明書(補件)/94-〇7,/94109733 下降 定區 ,在 在1 該距 一個 一行 之掃 有在 C (單 配置 光用 利用 之曝 6之 【11 描繪 來自 測量 14 200540936200540936 The intensity of the beam R rises to the specified value (becomes 0 N), and reaches the specified value (becomes OFF) in the non-patterned part. In order to scan the entire drawing area, the scanning of the exposure beam R is performed in a period (scanning unit in the Y direction of the exposure beam R). When scanning in the Y direction is completed, the exposure beam R is transmitted in the direction of The distance (the transmission unit in the X direction of the exposure light beam R) is separated from the adjacent area where the exposure light beam R is scanned, and becomes the area scanned by the lower exposure light beam R. This operation is repeated. When this drawing is completed, the exposure light beam R is transmitted to the next line, and the same drawing is repeated to scan the entire drawing area. When transmitting the exposure beam R to the next line, the method used is to set a slight overlap between the scanning units in the Y direction, and the path is drawn next to the transmitting side). Or to perform multiple exposures, overlap the specified direction in the Y direction. Scanning unit method (multi-path drawing method). In addition, the scanning of the exposure beam R in the Y direction is generally performed by using the deflection of the exposure beam R, and the movement of the exposure beam R in the X direction is performed by the movement of the stage. In this way, the scanning of the intensity-modulated light beam R of the modulated element 4 on the substrate 101 and the movement of the moving stage substrate 101 are performed repeatedly on the substrate 101. Carrying out the import: the drawing of the specified pattern entered. In addition, the speed performed by this method is, for example, about 300 mm2 to 1500 mm2 per minute. In addition, the laser drawing device is provided with a film thickness measuring means, based on the reflected light beam of the exposure light beam R of the substrate 101 to be exposed, 312XP / Invention Manual (Supplements) / 94-〇7, / 94109733, a falling fixed area, There is a sweep of 1 line at 1 in C (single configuration light with the use of exposure 6 of [11 pictured from measurement 14 200540936

抗蝕劑膜之膜厚。亦即,來自基板1 ο 1之曝光用光束R之 反射光束,經由射出透鏡2和偏轉元件5,到達光束分支 元件2 3。該光束分支元件2 3係例如射束分裂器。從調變 元件4朝向偏轉元件5之路徑之曝光用光束R,穿透該光 束分支元件2 3。另外,從偏轉元件5朝向調變元件4之路 徑之曝光用光束R,經由該光束分支元件2 3,從到調變元 件4之光路分支,射入到作為膜厚測量手段之膜厚測量電 路2 4。該膜厚測量電路2 4檢測射入之反射光量,根據其 檢測結果算出抗蝕劑膜1 0 2之膜厚。 來自基板101之曝光用光束R之反射光量,由於來自抗 蝕劑膜1 0 2表面之反射光和來自抗蝕劑膜1 0 2背面(亦即, 基板1 0 1之表面)之反射光之干涉而變動。亦即,來自基板 101之曝光用光束R之反射光量值成為抗蝕劑膜102之膜 厚之函數,所以假如預先指定該等反射光量值和膜厚之關 係時,可以利用反射光量之檢測結果得知抗蝕劑膜1 0 2之 膜厚。 另外,要使用曝光用光束R進行抗蝕劑之膜厚測量時, 需要產生來自基板101之曝光用光束R之反射光(即使只有 稍微)。但是,另外一方面,在使雷射描繪裝置進行動作時, 由於描繪精確度上之理由,通常最好將曝光用光束R之反 射光抑制成較低。因此,在本實施形態中,要獲得在對描 繪精確度不會有不良影響之範圍可以檢測之反射光時,亦 可以利用控制抗蝕劑之膜厚等之方法,預先調整從基板 1 0 1反射之反射率。 15 312XP/發明說明書(補件)/94-07/94109733 200540936 另外,在膜厚測量電路2 4算出之抗蝕劑膜1 0 2之膜厚 值,被發送到調變驅動器1 0。該調變驅動器1 0根據抗蝕 劑膜1 0 2之膜厚值,校正調變元件4之調變量。亦即,調 變元件4根據預先設定之描繪圖案和膜厚測量電路2 4之測 量結果,調變曝光用光束R之強度。The thickness of the resist film. That is, the reflected light beam from the exposure light beam R from the substrate 1 ο 1 passes through the exit lens 2 and the deflection element 5 and reaches the light beam branching element 2 3. The beam splitting element 2 3 is, for example, a beam splitter. The exposure beam R from the modulation element 4 to the deflection element 5 passes through the beam branching element 23. In addition, the exposure light beam R from the deflection element 5 to the modulation element 4 is branched from the optical path to the modulation element 4 through the beam branching element 23, and is incident on a film thickness measurement circuit as a film thickness measurement means. twenty four. This film thickness measuring circuit 24 detects the amount of incident reflected light, and calculates the film thickness of the resist film 102 based on the detection result. The amount of reflected light from the exposure light beam R from the substrate 101 is due to the reflected light from the surface of the resist film 102 and the reflected light from the back surface of the resist film 102 (that is, the surface of the substrate 101). Interference changes. That is, the reflected light amount of the exposure light beam R from the substrate 101 becomes a function of the film thickness of the resist film 102. Therefore, if the relationship between the reflected light amount and the film thickness is specified in advance, the reflected light amount can be used. As a result of the inspection, the film thickness of the resist film 102 was found. In addition, in order to measure the thickness of a resist using the exposure light beam R, it is necessary to generate reflected light (even slightly) from the exposure light beam R of the substrate 101. However, on the other hand, when the laser drawing device is operated, it is generally desirable to suppress the reflected light of the exposure light beam R to be low for reasons of drawing accuracy. Therefore, in this embodiment, to obtain reflected light that can be detected in a range that does not adversely affect the drawing accuracy, it is also possible to adjust the slave substrate 1 0 1 in advance by using a method such as controlling the film thickness of the resist. Reflectivity. 15 312XP / Invention Specification (Supplement) / 94-07 / 94109733 200540936 In addition, the film thickness value of the resist film 10 2 calculated in the film thickness measurement circuit 24 is sent to the modulation driver 10. The modulation driver 10 corrects the adjustment variable of the modulation element 4 based on the film thickness value of the resist film 102. That is, the modulation element 4 adjusts the intensity of the exposure light beam R based on a preset drawing pattern and a measurement result of the film thickness measurement circuit 24.

但是,在基板1 0 1之進行指定描繪圖案之描繪之區間, 因為曝光用光束R之強度依照描繪圖案被調變,所以反射 光束亦與該強度調變成正比例地進行變化。因此,在此種 情況,根據預先算出之與射出之曝光用光束R之調變強度 對應之反射光之強度和膜厚之關係,決定抗蝕劑膜之膜厚。 亦即,在該雷射描繪裝置中,如圖4之流程圖所示,首 先在步驟s 11,在基板1 0 1之指定膜厚測量區間,檢測該 曝光用光束R之反射光束之光量。該膜厚測量區間係例如 1 0 0 // Hi程度之區間。 然後,在步驟 s 12,根據檢測到之反射光束之光量,進 行膜厚測量區間之描繪點之抗蝕劑膜1 0 2之膜厚之計算, 算出其平均值,記憶該計算結果。 在步驟s t 3,對於在步驟s t 2算出之抗蝕劑膜1 0 2之膜 厚,判別是否被包含在指定範圍,當存在有被包含在指定 範圍之值時,前進到步驟 s 14,假如未被包含在指定範圍 時,前進到步驟s t 6。在此處之抗蝕劑膜1 0 2之膜厚指定 範圍是指例如指定膜厚土 2 . 5 %至± 5 %程度之範圍。 在步驟s t 6,判斷基板1 0 1之抗蝕劑膜1 0 2為不良,進 行表示有不良之警告。該警告之進行為例如發出警告音或 16 312XP/發明說明書(補件)/94-07/94109733 200540936 進行指定顯示。 在步驟s t 4,根據在步驟s t 2算出之抗蝕劑膜1 0 2之膜 厚,決定曝光用光束R之光量之校正值。 在步驟s t 5,根據在步驟 s 14決定之校正值,進行曝光 量(劑量:D 〇 s e )之校正,而且在進行鄰接之膜厚測量區間之 描繪之同時,進行步驟s 11。However, since the intensity of the exposure light beam R is adjusted in accordance with the drawing pattern in the section where the drawing pattern is designated on the substrate 101, the reflected light beam also changes in proportion to the intensity adjustment. Therefore, in this case, the thickness of the resist film is determined based on the relationship between the intensity of the reflected light and the film thickness calculated in advance corresponding to the modulation intensity of the emitted exposure light beam R. That is, in the laser drawing device, as shown in the flowchart of FIG. 4, firstly, in step s11, the light amount of the reflected light beam of the exposure light beam R is detected in a specified film thickness measurement interval of the substrate 101. The film thickness measurement interval is, for example, an interval of about 1 0 0 // Hi. Then, in step s12, the film thickness of the resist film 102 at the drawing points in the film thickness measurement interval is calculated based on the light amount of the detected reflected beam, and the average value is calculated, and the calculation result is memorized. In step st 3, it is judged whether the film thickness of the resist film 102 calculated in step st 2 is included in the specified range. When there is a value included in the specified range, the process proceeds to step s 14. If it is not included in the specified range, the process proceeds to step st 6. The specified range of the film thickness of the resist film 102 here is, for example, a range of approximately 2.5% to ± 5% of the specified film thickness. At step s6, it is judged that the resist film 102 of the substrate 101 is defective, and a warning indicating that there is a defect is issued. The warning is performed by, for example, sounding a warning sound or 16 312XP / Invention Specification (Supplement) / 94-07 / 94109733 200540936 for designated display. In step st4, a correction value of the light amount of the exposure light beam R is determined based on the film thickness of the resist film 1102 calculated in step st2. In step s 5, the exposure amount (dose: D 0 s e) is corrected based on the correction value determined in step s 14, and at the same time as the adjacent film thickness measurement interval is plotted, step s 11 is performed.

依照此種方式,在該雷射描繪裝置中,重複進行未描繪 之膜厚測量區間之抗钱劑膜1 0 2的膜厚測量,和根據該膜 厚測量結果進行曝光量之校正的描繪,藉此依序進行指定 描繪圖案之描繪。 在光栅掃描方式中,依照上述方式,在重複進行曝光用 光束R之Y方向掃描單位之掃描和X方向傳送單位之移動 之情況時,實用上最好設定成在Y方向掃描單位包含有整 數個膜厚測量區間。在單路徑方式中,更好是設定成在 Y 方向掃描單位中之除了重疊部份外之區間,包含有整數個 膜厚測量區間。 在此種情況,在各行之最初Y方向掃描單位,只測量膜 厚,不進行曝光校正,而是從下一個區間起進行曝光校正。 另夕卜,在Y方向掃描單位,或除了其重疊部份外之區間, 在設定成包含有2個以上膜厚測量區間之情況時,在各個 Y方向掃描單位之最初區間,使用先前之Y方向掃描單位 之膜厚測量結果,進行曝光校正。 另外,對於膜厚測量區間之X方向長度,實用上最好成 為與相當於曝光用光束R之射束直徑之X方向傳送單位相 17 312XP/發明說明書(補件)/94-07/94109733 200540936 同。另外,在Y方向掃描單位,或除了其重疊部份外之區 間,在設定成包含1個膜厚測量區間之情況時,亦可將2 個以上之X方向傳送單位作為膜厚測量區間。 上述方法是反映鄰接區間之膜厚測量結果,進行曝光校 正者,但是抗蝕劑膜通常不是以微觀粗度變動膜厚,而是 在面内具有巨觀傾向地進行變動,所以可獲得充分效果。 (雷射描繪裝置之第2實施形態)In this way, in the laser drawing device, repeating the film thickness measurement of the anti money film 1 2 in the film thickness measurement interval that is not drawn, and drawing the correction of the exposure amount based on the film thickness measurement result, In this way, the drawing of the designated drawing pattern is sequentially performed. In the raster scanning method, according to the above method, when the scanning in the Y-direction scanning unit and the X-direction transmission unit of the exposure light beam R are repeatedly performed, it is practically preferable to set the scanning unit in the Y direction to include an integer number. Film thickness measurement interval. In the single path method, it is more preferable to set the interval except the overlapping portion in the Y-direction scanning unit to include an integer number of film thickness measurement intervals. In this case, in the first Y-direction scanning unit of each line, only the film thickness is measured, and exposure correction is not performed, but exposure correction is performed from the next interval. In addition, when scanning the unit in the Y direction, or an interval other than its overlapping portion, when it is set to include two or more film thickness measurement intervals, the initial interval of each Y-direction scanning unit uses the previous Y The film thickness measurement result of the directional scanning unit is subjected to exposure correction. In addition, the X-direction length of the film thickness measurement interval is preferably practically equal to the X-direction transmission unit equivalent to the beam diameter of the exposure beam R. 17 312XP / Invention Specification (Supplement) / 94-07 / 94109733 200540936 with. In addition, when the scanning unit in the Y direction or an area other than the overlapping portion is set to include one film thickness measurement interval, two or more X-direction transmission units may be used as the film thickness measurement interval. The above method reflects the thickness measurement results of adjacent sections and performs exposure correction. However, the resist film usually does not change the thickness of the film with a microscopic thickness, but changes with a large tendency in the plane, so a sufficient effect can be obtained. . (Second Embodiment of Laser Drawing Device)

另外,本發明之雷射描繪裝置亦可構建成如圖5所示, 與描繪頭1分開地設置用來將膜厚測量用光束Μ照射在成 為曝光對象物之基板1 0 1的光學頭2 5。 在此種情況時,該雷射描繪裝置成為如圖6所示,具有 描繪頭1和用來照射膜厚測量用光束Μ之光學頭2 5,成為 掃描手段之偏轉元件5和移動載物台6係使基板1 0 1上之 曝光用光束R和膜厚測量用光束Μ之照射位置移動。亦即, 從光源3發出之曝光用光束R,射入到調變元件4,被該調 變元件 4進行強度調變。該調變元件 4被調變驅動器1 0 驅動,用來對穿透曝光用光束R之強度進行調變。在調變 驅動器1 0被供給有經由資料輸入裝置11,資料處理裝置 1 2,記憶器1 3和資料讀出裝置1 4之資料。 另外,被該調變元件4強度調變之曝光用光束R,射入 到偏轉元件5之曝光用光束R用之偏轉元件(未圖示),經 由透過該曝光用光束R用偏轉元件使射出方向偏轉。該曝 光用光束R用偏轉元件被掃描電路1 7驅動,用來使穿透之 曝光用光束R之光路以一定週期偏轉。 18 312ΧΡ/發明說明書(補件)/94-07/94109733In addition, as shown in FIG. 5, the laser drawing device of the present invention may be configured as an optical head 2 provided separately from the drawing head 1 to irradiate the film thickness measurement beam M on the substrate 1 0 1 which is the object of exposure 5. In this case, as shown in FIG. 6, the laser drawing device has a drawing head 1 and an optical head 25 for irradiating a film thickness measurement beam M, and a deflection element 5 and a moving stage for scanning means. 6 is to move the irradiation positions of the exposure light beam R and the film thickness measurement light beam M on the substrate 101. That is, the exposure light beam R emitted from the light source 3 is incident on the modulation element 4, and the intensity modulation is performed by the modulation element 4. The modulation element 4 is driven by a modulation driver 10 to adjust the intensity of the light beam R for penetration exposure. The modulation driver 10 is supplied with data via a data input device 11, a data processing device 12, a memory 13 and a data reading device 14. In addition, the exposure beam R whose intensity is modulated by the modulation element 4 is incident on a deflection element (not shown) for the exposure beam R for the deflection element 5 and transmitted through the deflection element for the exposure beam R. Directional deflection. The deflection element for the exposure light beam R is driven by the scanning circuit 17 to deflect the optical path of the penetrating exposure light beam R at a constant period. 18 312XP / Invention Specification (Supplement) / 94-07 / 94109733

200540936 另外,從光學頭25發出之膜厚測量用光束Μ,射入到 轉元件5之膜厚測量用光束Μ用之偏轉元件(未圖示), 透該膜厚測量用光束Μ用偏轉元件使射出方向偏轉。該 厚測量用光束Μ用偏轉元件,與曝光用光束R用偏轉元 同時保持著膜厚測量用光束Μ和曝光用光束R間之一定 離,並被偏轉。 被偏轉元件5偏轉射出方向之曝光用光束R和膜厚測 用光束 Μ,射入到該射出透鏡 2,聚光和照射在基板 1 上之抗蝕劑膜 1 0 2。依照此種方式,照射在基板1 0 1上 曝光用光束R以一定週期被偏轉,和依照被描繪在基板1 上之圖案,被強度調變。 另夕卜,X Υ控制器1 8經由伺服機構1 9、2 0、2 1、2 2驅 移動載物台6,如圖6中之箭頭X和箭頭Υ所示,以指 週期使基板1 0 1在水平方向移動操作,用來使該基板1 與描繪頭1及光學頭2 5進行相對移動。 在該雷射描繪裝置,使用與第1實施形態同樣之光栅 描描繪方式,在基板 1 01 上,例如以每分鐘 3 0 0 mm2 1 5 0 0 m m2左右之速度,進行資料輸入裝置1 1輸入之指定 案之描繪。 另外,該雷射描繪裝置具備有根據來自成為曝光對象 之基板1 0 1之膜厚測量用光束Μ之反射光束,測量抗蚀 膜之膜厚的膜厚測量手段。亦即,來自基板1 〇 1之膜厚 量用光束Μ之反射光束,經由射出透鏡2和偏轉元件5 射入到成為膜厚測量手段之膜厚測量電路2 4。該膜厚測 312ΧΡ/發明說明書(補件)/94-07/94109733 偏 穿 膜 件 距 量 0 1 之 0 1 動 定 0 1 掃 至 圖 物 劑 測 量 19200540936 In addition, the film thickness measurement light beam M emitted from the optical head 25 is incident on a deflection element (not shown) for the film thickness measurement light beam M of the rotating element 5 and passes through the film thickness measurement light beam M for a deflection element. Deflect the shooting direction. The deflection element for the thickness measurement beam M is deflected while maintaining a certain distance between the film thickness measurement beam M and the exposure beam R while the deflection element for the exposure beam R is maintained. The exposure light beam R and the film thickness measurement light beam M, which are deflected by the deflection element 5 in the emission direction, are incident on the emission lens 2 to condense and irradiate the resist film 102 on the substrate 1. In this way, the exposure beam R is irradiated on the substrate 101 and is deflected at a certain period, and the intensity is adjusted in accordance with the pattern drawn on the substrate 1. In addition, the X Υ controller 18 drives the stage 6 through the servo mechanisms 19, 20, 21, 2 and 2, as shown by the arrow X and the arrow 6 in FIG. 0 1 moves in the horizontal direction to move the substrate 1 relative to the drawing head 1 and the optical head 25. In this laser drawing device, the same raster drawing method as in the first embodiment is used. On the substrate 1 01, for example, a data input device 11 is performed at a speed of about 300 mm2 per minute at 5000 m2. The description of the specified designation entered. In addition, this laser drawing device is provided with a film thickness measuring means for measuring the film thickness of the resist film based on the reflected light beam from the film thickness measurement light beam M from the substrate 1 to be exposed. That is, the reflected light beam from the film thickness amount light beam M from the substrate 101 is incident on the film thickness measurement circuit 24 which is a film thickness measurement means through the exit lens 2 and the deflection element 5. The film thickness measurement 312XP / Invention Specification (Supplement) / 94-07 / 94109733 Partially penetrated film piece distance 0 1 of 0 1 Dynamic setting 0 1

200540936 電路2 4檢測射入之反射光量,根據其檢測結果,算出抗 劑膜1 0 2之膜厚。 來自基板1 0 1之膜厚測量用光束Μ之反射光量,由於 自抗蝕劑膜1 0 2表面之反射光和來自抗蝕劑膜1 0 2背面( 即,基板1 0 1之表面)之反射光之干涉而進行變動。亦即 因為來自基板101之膜厚測量用光束Μ之反射光量值成 抗蝕劑膜1 0 2之膜厚之函數,所以假如預先指定該等反 光量值和膜厚之關係時,可以利用反射光量之檢測結果 知抗蝕劑膜1 0 2之膜厚。 另外,在膜厚測量電路2 4算出之抗蝕劑膜1 0 2之膜 值,被發送到調變驅動器1 0。該調變驅動器1 0根據抗 劑膜1 0 2之膜厚值,校正調變元件4之調變量。亦即, 變元件4根據預先設定之描繪圖案和膜厚測量電路2 4之 量結果,調變曝光用光束R之強度。 在該雷射描繪裝置中,膜厚測量用光束Μ在基板1 0 1」 比曝光用光束R先掃描。亦即,在基板1 01上,在被膜 測量用光束Μ照射之位置,然後被曝光用光束R照射。 此,曝光用光束R照射在已被膜厚測量用光束Μ照射之 蝕劑膜1 0 2之測量膜厚後之位置,根據該測量結果進行 度之校正。 另外,該膜厚測量用光束Μ使用抗蝕劑不會被感光之 波長(例如,波長5 0 0 n m以上)雷射。 另外,基板1 0 1上之曝光用光束R之照射位置,和基 1 0 1上之膜厚測量用光束Μ之照射位置之間隔,最好為1 0 312XP/發明說明書(補件)/94-07/94109733 來 亦 , 為 射 得 厚 蝕 調 測 j 厚 因 抗 強 高 板 m m 20 200540936 以下。亦即,利用膜厚測量用光束Μ之照射所測量到之抗 蝕劑膜 1 0 2之膜厚(或根據該膜厚對曝光用光束R之校正 值),在該被測量之位置被曝光用光束R照射前之期間,必 需被記憶,但是經由使曝光用光束R和膜厚測量用光束Μ 之照射位置之間隔變窄,可以使被曝光用光束R照射前必 需記憶之資料量減少。200540936 Circuit 24 detects the amount of incident reflected light, and calculates the film thickness of the resist film 102 based on the detection result. The amount of reflected light from the beam M for measuring the film thickness from the substrate 101 is due to the amount of reflected light from the surface of the resist film 102 and from the back surface of the resist film 102 (ie, the surface of the substrate 101). The interference of reflected light changes. That is, because the reflected light amount value of the light beam M for measuring the film thickness from the substrate 101 is a function of the film thickness of the resist film 102, if the relationship between the reflected light amount value and the film thickness is specified in advance, it can be used As a result of measuring the amount of reflected light, the thickness of the resist film 102 was known. In addition, the film value of the resist film 102 calculated by the film thickness measuring circuit 24 is sent to the modulation driver 10. The modulation driver 10 corrects the modulation variable of the modulation element 4 based on the film thickness value of the resist film 102. That is, the variable element 4 adjusts the intensity of the exposure light beam R based on a preset measurement pattern and a measurement result of the film thickness measurement circuit 24. In this laser drawing device, the film thickness measurement light beam M is scanned on the substrate 1 0 1 ″ before the exposure light beam R. That is, the substrate 101 is irradiated with the light beam M for measurement of the film, and then irradiated with the light beam R for exposure. Here, the exposure beam R is irradiated to the position of the etchant film 102 which has been irradiated with the film thickness measurement beam M after the measurement of the film thickness, and the degree is corrected based on the measurement result. In addition, the film thickness measurement beam M is not irradiated with laser light at a wavelength (for example, a wavelength of 500 nm or more) using a resist. In addition, the interval between the irradiation position of the exposure beam R on the substrate 101 and the irradiation position of the film thickness measurement beam M on the substrate 101 is preferably 10312XP / Invention Specification (Supplement) / 94 -07/94109733 Lai Yi, commissioning for thick erosion test j thickness due to high strength plate 20 20 040 936 or less. That is, the film thickness of the resist film 102 (or the correction value of the exposure light beam R based on the film thickness) measured by the irradiation of the film thickness measurement beam M is exposed at the measured position. The period before irradiation with the light beam R must be memorized. However, by narrowing the interval between the exposure positions of the exposure light beam R and the film thickness measurement beam M, the amount of data that must be stored before the exposure light beam R can be reduced.

另夕卜,該雷射描繪裝置亦可以構建成如圖5所示,使膜 厚測量用光束Μ以大致為4 5 °之射入角,照射基板1 0 1,該 膜厚測量用光束Μ之以大致4 5 °之射出角從基板1 0 1射出 之反射光束,對膜厚測量電路2 4直接射入。 另外,利用膜厚測量電路2 4之抗蝕劑膜1 0 2之膜厚測量 亦可以僅在基板1 0 1之未進行指定描繪圖案之描繪之膜厚 測量區間進行。在此種情況,在該雷射描繪裝置,如圖 7 之流程圖所示,首先在步驟s 11 1,在基板1 0 1之膜厚測量 區間,檢測膜厚測量用光束Μ之反射光束之光量。該膜厚 測量區間係例如1 0 // πι程度之區間。 然後,在步驟s 11 2,根據檢測到之反射光束之光量,進 行抗蝕劑膜1 0 2之膜厚計算,算出其平均值,記憶其計算 結果。 在步驟 s 11 3,對於在步驟 s t 1 2所算出之抗蝕劑膜 1 0 2 之膜厚,判別是否被包含在指定範圍内,假如被包含在指 定範圍内時就前進到步驟s 11 4,假如未被包含在指定範圍 内時就前進到步驟s t 1 6。在此處之抗蝕劑膜1 0 2之膜厚指 定範圍是例如指定膜厚± 2 . 5 %至± 5 %程度之範圍。 21 312XP/發明說明書(補件)/94-07/94109733 200540936 在步驟s t 1 6,判斷基板1 0 1之抗蝕劑膜1 0 2為不良,進 行表示有不良之警告。該警告之進行為例如經由發出警告 音或進行指定顯示。 在步驟 s 11 4,根據在步驟 s t 1 2所算出之抗蝕劑膜1 0 2 之膜厚,決定曝光用光束R之光量之校正值。 在步驟s 11 5,根據在步驟s t 1 4所決定之校正值,進行 曝光量(劑量:D 〇 s e )之校正,在進行描繪之同時,在該區間 進行步驟s t 1 1。In addition, the laser drawing device can also be constructed as shown in FIG. 5 so that the film thickness measurement light beam M is irradiated to the substrate 101 at an incidence angle of approximately 45 °, and the film thickness measurement light beam M The reflected light beam emitted from the substrate 110 at an exit angle of approximately 45 ° is directly incident on the film thickness measurement circuit 24. In addition, the film thickness measurement of the resist film 102 by the film thickness measurement circuit 24 may be performed only in the film thickness measurement section of the substrate 101 where the designated drawing pattern is not drawn. In this case, in the laser drawing device, as shown in the flowchart of FIG. 7, first, in step s 11 1, in the film thickness measurement interval of the substrate 101, the reflected beam of the film thickness measurement beam M is detected. Amount of light. The film thickness measurement interval is, for example, an interval of about 10 // πm. Then, in step s 11 2, the film thickness of the resist film 102 is calculated based on the detected light quantity of the reflected beam, and the average value is calculated, and the calculation result is memorized. In step s 11 3, it is determined whether the film thickness of the resist film 1 0 2 calculated in step st 12 is included in the specified range. If it is included in the specified range, the process proceeds to step s 11 4 If it is not included in the specified range, proceed to step st 1 6. The specified range of the film thickness of the resist film 102 here is, for example, a specified film thickness range of about ± 2.5% to ± 5%. 21 312XP / Invention Specification (Supplement) / 94-07 / 94109733 200540936 In step s16, it is judged that the resist film 10 of the substrate 101 is defective, and a warning is issued to indicate that it is defective. This warning is performed, for example, by sounding a warning sound or performing a specified display. In step s 11 4, a correction value of the light amount of the exposure light beam R is determined based on the film thickness of the resist film 10 2 calculated in step s t 1 2. In step s 11 5, the exposure amount (dose: D 0 s e) is corrected based on the correction value determined in step s t 1 4. At the same time as drawing, step s t 1 1 is performed in this interval.

依照此種方式,在該雷射描繪裝置,重複進行未描繪之 膜厚測量區間之抗蝕劑膜1 〇 2的膜厚測量,和根據該膜測 量結果進行曝光量之校正的描繪,藉以依序進行指定描繪 圖案之描繪。 另外,在光柵掃描方式中,如上述之方式,在重複進行 曝光用光束R之Y方向掃描單位之掃描和X方向傳送單位 之移動之情況時,在實用上最好設定成在Y方向掃描單位 包含有整數個膜厚測量區間,在單路徑方式之情況,更好 是設定成在Y方向掃描單位之除了重疊部份外之區間,包 含有整數個膜厚測量區間。 另外,對於膜厚測量區間之X方向長度,實用上最好與 相當於曝光用光束R之射束直徑之X方向傳送單位相同。 另外,當設定成在Y方向掃描單位,或除了其重疊部份外 之區間包含有1個膜厚測量區間之情況時,亦可將2個以 上之X方向傳送單位作為膜厚測量區間。 在此種方法中,偏轉元件5被設定成使曝光用光束R和 22 312XP/發明說明書(補件)/94-07/94109733 200540936 膜厚測量用光束Μ,分別至少掃描Y方向掃描單位。 【圖式簡單說明】 圖1是方塊圖,用來表示本發明之雷射描繪裝置之第1 實施形態之構造。 圖2是立體圖,用來表示上述雷射描繪裝置之第1實施 形態之描繪頭之構造。 圖3是俯視圖,用來說明上述雷射描繪裝置之描繪方式 之光栅掃描方式。In this way, in the laser drawing device, the film thickness measurement of the resist film 102 in the film thickness measurement interval that is not drawn is repeated, and the exposure amount correction drawing is performed according to the film measurement result, so that In order to draw a designated drawing pattern in sequence. In addition, in the raster scanning method, as described above, when the scanning in the Y-direction scanning unit and the X-direction transmission unit of the exposure light beam R are repeatedly performed, it is preferable to set the scanning unit in the Y-direction practically. Contains an integer number of film thickness measurement intervals. In the case of the single-path method, it is better to set the interval of the scanning unit in the Y direction except for the overlapping portion, which includes an integer number of film thickness measurement intervals. The X-direction length of the film thickness measurement interval is preferably the same as the X-direction transmission unit corresponding to the beam diameter of the exposure beam R. In addition, when the scanning unit is set in the Y direction, or when the interval other than the overlapping portion includes one film thickness measurement interval, two or more X-direction transmission units may be used as the film thickness measurement interval. In this method, the deflection element 5 is set so that the exposure beams R and 22 312XP / Invention Specification (Supplement) / 94-07 / 94109733 200540936 beam thickness measurement beam M are scanned at least in the Y-direction scanning unit, respectively. [Brief Description of the Drawings] FIG. 1 is a block diagram showing the structure of the first embodiment of the laser drawing device of the present invention. Fig. 2 is a perspective view showing the structure of a drawing head according to the first embodiment of the laser drawing device. Fig. 3 is a plan view illustrating a raster scan method of the drawing method of the laser drawing device.

圖4是流程圖,用來表示上述雷射描繪裝置之第1實施 形態之動作。 圖5是側視圖,用來表示本發明之雷射描繪裝置之第2 實施形態之描繪頭之構造。 圖6是方塊圖,用來表示上述雷射描繪裝置之第2實施 形態之構造。 圖7是流程圖,用來表示上述雷射描繪裝置之第2實施 形態之動作。 【主要元件符號說明】 1 描繪頭 2 射出透鏡 3 光源 4 調變元件 5 偏轉元件 6 移動載物台 7 基座部 23 312ΧΡ/發明說明書(補件)m-07/94109733 200540936 8 滑 動 器 9 移 動 載 10 調 變 驅 11 資 料 竿刖 12 資 料 處 13 6己 憶 器 14 資 料 讀 15 控 制 器 16 時 脈 產 17 掃 描 電 18 ΧΥ 控 制 19、 20、2 1 22 23 光 束 分 24 膜 厚 測 25 光 學 頭 10 1 基 板 1 02 抗 蝕 劑 Μ 膜 厚 測 R 曝 光 用Fig. 4 is a flowchart showing the operation of the first embodiment of the laser drawing device. Fig. 5 is a side view showing the structure of a drawing head according to a second embodiment of the laser drawing device of the present invention. Fig. 6 is a block diagram showing the structure of the second embodiment of the laser drawing device. Fig. 7 is a flowchart showing the operation of the second embodiment of the laser drawing device. [Description of main component symbols] 1 Drawing head 2 Ejection lens 3 Light source 4 Modulation element 5 Deflection element 6 Moving stage 7 Base 23 23312 × P / Invention Manual (Supplement) m-07 / 94109733 200540936 8 Slider 9 Move Load 10 Modulation drive 11 Data rod 12 Data office 13 6 Memory device 14 Data reading 15 Controller 16 Clock production 17 Scanning power 18 ▶ Control 19, 20, 2 1 22 23 Beam split 24 Film thickness measurement 25 Optical head 10 1 Substrate 1 02 Resist M Film thickness measurement R For exposure

物台 動器 入裝置 理裝置 出裝置 生器 路 器 伺服機構 支元件 量電路 膜 量用光束 光束 3 ] 2XP/發明說明書(補件)/94-07/94109733 24Stage actuator Input device Processing device Output device Biomechanical device Servo mechanism Supporting element Measuring circuit Film Measuring light beam 3] 2XP / Invention Manual (Supplement) / 94-07 / 94109733 24

Claims (1)

200540936 十、申請專利範圍: 1 . 一種雷射描繪裝置,其特徵在於具備有: 描繪頭,用來使曝光用光束照射在表面部形成有抗蝕劑 膜之曝光對象物; 掃描手段,使上述曝光對象物上之上述曝光用光束之照 射位置移動;200540936 10. Scope of patent application: 1. A laser drawing device, comprising: a drawing head for irradiating an exposure light beam with an exposure target on which a resist film is formed on a surface portion; and a scanning method to make the above The irradiation position of the exposure light beam on the exposure object moves; 調變手段,用來調變上述曝光用光束之強度;及 膜厚測量手段,根據來自上述曝光對象物之上述曝光用 光束之反射光束,測量上述抗蝕劑膜之膜厚; 上述調變手段根據預先設定之描繪圖案和上述膜厚測量 手段之測量結果,調變上述曝光用光束之強度。 2 . —種雷射描繪裝置,其特徵在於具備有: 描繪頭,用來使曝光用光束照射在表面部形成有抗蝕劑 膜之曝光對象物; 光學頭,用來對上述曝光對象物照射膜厚測量用光束; 掃描手段,使上述曝光對象物上之上述曝光用光束和上 述膜厚測量用光束之照射位置移動; 調變手段,用來調變上述曝光用光束之強度;及 膜厚測量手段,根據來自上述曝光對象物之上述膜厚測 量用光束之反射光束,測量上述抗蝕劑膜之膜厚; 上述膜厚測量用光束係於上述曝光對象物對被上述曝光 用光束照射之位置,比該曝光用光束先照射; 上述調變手段根據預先設定之描繪圖案和上述膜厚測量 手段之測量結果,調變上述曝光用光束之強度。 25 3 ] 2XP/發明說明書(補件)/94-07/94109733 200540936 3.如申請專利範圍第2項之雷射描繪裝置,其中,上述 曝光對象物上之上述曝光用光束之照射位置和上述曝光對 象物上之上述膜厚測量用光束之照射位置之間隔,成為 1 0 m m以下。 4 . 一種雷射描繪方法,其特徵在於所具備之步驟包含有: 利用描繪頭對在表面部形成有抗蝕劑膜之曝光對象物照 射曝光用光束;A modulation means for adjusting the intensity of the exposure light beam; and a film thickness measuring means for measuring the film thickness of the resist film based on the reflected light beam from the exposure light beam from the exposure object; the modulation means The intensity of the exposure light beam is adjusted according to a preset drawing pattern and a measurement result of the film thickness measuring means. 2. A laser drawing device, comprising: a drawing head for irradiating an exposure target with a resist film formed on a surface thereof by an exposure light beam; and an optical head for irradiating the exposure target Film thickness measurement beam; Scanning means to move the irradiation positions of the exposure beam and the film thickness measurement beam on the exposure object; Modulation means to adjust the intensity of the exposure beam; and film thickness The measuring means measures the film thickness of the resist film based on the reflected light beam from the light beam for measuring the thickness of the exposure object; the light beam for measuring the thickness is a beam from the object to be irradiated with the light beam for exposure by the exposure object. The position is irradiated before the exposure beam; the modulation means adjusts the intensity of the exposure beam according to a preset drawing pattern and a measurement result of the film thickness measurement means. 25 3] 2XP / Invention Specification (Supplement) / 94-07 / 94109733 200540936 3. The laser drawing device according to item 2 of the patent application scope, wherein the irradiation position of the exposure beam on the exposure object and the above The interval between the irradiation positions of the film thickness measurement beam on the object to be exposed is 10 mm or less. 4. A laser drawing method, comprising the steps of: using a drawing head to irradiate an exposure beam with an exposure target having a resist film formed on a surface portion thereof; 使上述曝光對象物上之上述曝光用光束之照射位置移 動; 根據來自上述曝光對象物之上述曝光用光束之反射光 束,測量上述抗蝕劑膜之膜厚;及 根據預先設定之描繪圖案和上述抗蝕劑膜之膜厚之測量 結果,調變上述曝光用光束之強度。 5. —種雷射描繪方法,其特徵在於所具備之步驟包含有: 利用描繪頭對在表面部形成有抗蝕劑膜之曝光對象物照 射曝光用光束,同時對上述曝光對象物照射膜厚測量用光 束; 在上述曝光對象物上,對於被上述曝光用光束照射之位 置,以上述膜厚測量用光束比該曝光用光束先照射之方 式,使上述曝光對象物上之上述曝光用光束和上述膜厚測 量用光束之照射位置移動; 根據來自上述曝光對象物之上述膜厚測量用光束之反射 光束,測量上述抗蝕劑膜之膜厚;及 根據預先設定之描繪圖案和上述抗蝕劑膜之膜厚之測量 26 312XP/發明說明書(補件)/94-07/94109733 200540936 結果,調變上述曝光用光束之強度。 6 . —種光罩之製造方法,其特徵在於所具備之步驟包含 有: 利用描繪頭對在表面部具有抗蝕劑膜之光罩胚料照射曝 光用光束; 使上述光罩胚料上之上述曝光用光束之照射位置移動; 根據來自上述光罩胚料之上述曝光用光束之反射光束, 測量上述抗蝕劑膜之膜厚;及Moving the irradiation position of the exposure light beam on the exposure object; measuring the film thickness of the resist film based on the reflected light beam of the exposure light beam from the exposure object; and according to a preset drawing pattern and the As a result of measuring the film thickness of the resist film, the intensity of the above-mentioned exposure light beam was adjusted. 5. —A laser drawing method, comprising the steps of: irradiating an exposure object with a resist film having a resist film formed on a surface portion by using a drawing head, and irradiating the exposure object with a film thickness Measuring beam; on the exposure object, for the position irradiated by the exposure beam, the exposure beam and the exposure beam are irradiated with the film thickness measurement beam before the exposure beam; The irradiation position of the film thickness measurement light beam moves; the film thickness of the resist film is measured based on the reflected light beam from the film thickness measurement light beam from the exposure target; and the preset pattern and the resist are measured Measurement of film thickness of film 26 312XP / Invention Specification (Supplement) / 94-07 / 94109733 200540936 As a result, the intensity of the above-mentioned exposure light beam is adjusted. 6. A method for manufacturing a photomask, characterized in that the method includes the steps of: irradiating an exposure light beam to a photomask blank having a resist film on a surface portion by using a drawing head; The irradiation position of the exposure light beam is moved; the film thickness of the resist film is measured based on the reflected light beam of the exposure light beam from the mask blank; and 根據預先設定之描繪圖案和上述抗蝕劑膜之膜厚之測量 結果,調變上述曝光用光束之強度。 7 . —種光罩之製造方法,其特徵在於所具備之步驟包含 有: 利用描繪頭對在表面部具有抗蝕劑膜之光罩胚料照射曝 光用光束,同時對上述光罩胚料照射膜厚測量用光束; 在上述光罩胚料上,對於被上述曝光用光束照射之位 置,以上述膜厚測量用光束比該曝光用光束先照射之方 式,使上述光罩胚料上之上述曝光用光束和上述膜厚測量 用光束之照射位置移動; 根據來自上述光罩胚料之上述膜厚測量用光束之反射光 束,測量上述抗蝕劑膜之膜厚;及 根據預先設定之描繪圖案和上述抗蝕劑膜之膜厚之測量 結果,調變上述曝光用光束之強度。 27 312XP/發明說明書(補件)/94-07/94109733The intensity of the exposure light beam is adjusted based on a preset drawing pattern and a measurement result of the film thickness of the resist film. 7. A method for manufacturing a photomask, characterized in that the method includes the steps of: irradiating the photomask blank having a resist film on a surface portion with an exposure light beam by using a drawing head, and simultaneously irradiating the photomask blank Film thickness measurement beam; on the mask blank, for the position irradiated by the exposure beam, the film thickness measurement beam is irradiated before the exposure beam, so that the above The irradiation positions of the exposure beam and the film thickness measurement beam are moved; the film thickness of the resist film is measured based on the reflected beam of the film thickness measurement beam from the photomask blank; and the preset pattern is drawn. And the measurement result of the thickness of the resist film, the intensity of the exposure light beam is adjusted. 27 312XP / Invention Manual (Supplement) / 94-07 / 94109733
TW094109733A 2004-03-31 2005-03-29 Laser plotting device, laser plotting method, and method of manufacturing photomask TWI279829B (en)

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