KR100644454B1 - 거친 루테늄-함유 층 및 구조물을 형성하는 방법 및 그의 사용 방법 - Google Patents

거친 루테늄-함유 층 및 구조물을 형성하는 방법 및 그의 사용 방법 Download PDF

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KR100644454B1
KR100644454B1 KR1020027016735A KR20027016735A KR100644454B1 KR 100644454 B1 KR100644454 B1 KR 100644454B1 KR 1020027016735 A KR1020027016735 A KR 1020027016735A KR 20027016735 A KR20027016735 A KR 20027016735A KR 100644454 B1 KR100644454 B1 KR 100644454B1
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ruthenium
rough
layer
substrate assembly
reaction chamber
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KR20030010674A (ko
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가로 더데리안
비쉬누 케이. 아가왈
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마이크론 테크놀로지 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020027016735A 2000-06-08 2001-06-07 거친 루테늄-함유 층 및 구조물을 형성하는 방법 및 그의 사용 방법 Expired - Fee Related KR100644454B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/589,849 US6429127B1 (en) 2000-06-08 2000-06-08 Methods for forming rough ruthenium-containing layers and structures/methods using same
US09/589,849 2000-06-08
PCT/US2001/040867 WO2001095376A2 (en) 2000-06-08 2001-06-07 Methods for forming rough ruthenium-containing layers and structures/methods using same

Publications (2)

Publication Number Publication Date
KR20030010674A KR20030010674A (ko) 2003-02-05
KR100644454B1 true KR100644454B1 (ko) 2006-11-10

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Family Applications (1)

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KR1020027016735A Expired - Fee Related KR100644454B1 (ko) 2000-06-08 2001-06-07 거친 루테늄-함유 층 및 구조물을 형성하는 방법 및 그의 사용 방법

Country Status (6)

Country Link
US (4) US6429127B1 (enExample)
EP (1) EP1292992A2 (enExample)
JP (1) JP2003535978A (enExample)
KR (1) KR100644454B1 (enExample)
AU (1) AU2001267039A1 (enExample)
WO (1) WO2001095376A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150108460A (ko) * 2014-03-17 2015-09-30 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150108460A (ko) * 2014-03-17 2015-09-30 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR102257978B1 (ko) * 2014-03-17 2021-05-31 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Also Published As

Publication number Publication date
US7144810B2 (en) 2006-12-05
US6429127B1 (en) 2002-08-06
US6897160B2 (en) 2005-05-24
US6784504B2 (en) 2004-08-31
EP1292992A2 (en) 2003-03-19
KR20030010674A (ko) 2003-02-05
WO2001095376A3 (en) 2002-06-27
US20020058414A1 (en) 2002-05-16
AU2001267039A1 (en) 2001-12-17
US20020058415A1 (en) 2002-05-16
US20050208741A1 (en) 2005-09-22
JP2003535978A (ja) 2003-12-02
WO2001095376A2 (en) 2001-12-13

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