JP2003535978A - 粗ルテニウム含有層を形成する方法、ならびに粗ルテニウム含有層を使用した構造体および粗ルテニウム含有層を使用する方法 - Google Patents
粗ルテニウム含有層を形成する方法、ならびに粗ルテニウム含有層を使用した構造体および粗ルテニウム含有層を使用する方法Info
- Publication number
- JP2003535978A JP2003535978A JP2002502819A JP2002502819A JP2003535978A JP 2003535978 A JP2003535978 A JP 2003535978A JP 2002502819 A JP2002502819 A JP 2002502819A JP 2002502819 A JP2002502819 A JP 2002502819A JP 2003535978 A JP2003535978 A JP 2003535978A
- Authority
- JP
- Japan
- Prior art keywords
- ruthenium
- layer
- crude
- rough
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052707 ruthenium Inorganic materials 0.000 title claims abstract description 210
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims abstract description 209
- 238000000034 method Methods 0.000 title claims abstract description 126
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims abstract description 88
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 88
- 238000006243 chemical reaction Methods 0.000 claims abstract description 76
- 239000002243 precursor Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 239000003990 capacitor Substances 0.000 claims abstract description 50
- 238000000137 annealing Methods 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000001301 oxygen Substances 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 57
- 238000000151 deposition Methods 0.000 claims description 43
- 230000008021 deposition Effects 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 33
- 239000012159 carrier gas Substances 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 18
- 239000012298 atmosphere Substances 0.000 claims description 14
- 230000005672 electromagnetic field Effects 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 239000003085 diluting agent Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 205
- 238000005229 chemical vapour deposition Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 230000004888 barrier function Effects 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 210000000352 storage cell Anatomy 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical compound C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 description 8
- 229910052734 helium Inorganic materials 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 238000007865 diluting Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cis-cyclohexene Natural products C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- -1 ruthenium oxide Chemical class 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000012705 liquid precursor Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910015801 BaSrTiO Inorganic materials 0.000 description 1
- 101150097381 Mtor gene Proteins 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- FTIMWVSQXCWTAW-UHFFFAOYSA-N ruthenium Chemical compound [Ru].[Ru] FTIMWVSQXCWTAW-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/694—Electrodes comprising noble metals or noble metal oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/589,849 US6429127B1 (en) | 2000-06-08 | 2000-06-08 | Methods for forming rough ruthenium-containing layers and structures/methods using same |
| US09/589,849 | 2000-06-08 | ||
| PCT/US2001/040867 WO2001095376A2 (en) | 2000-06-08 | 2001-06-07 | Methods for forming rough ruthenium-containing layers and structures/methods using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003535978A true JP2003535978A (ja) | 2003-12-02 |
| JP2003535978A5 JP2003535978A5 (enExample) | 2006-01-05 |
Family
ID=24359811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002502819A Pending JP2003535978A (ja) | 2000-06-08 | 2001-06-07 | 粗ルテニウム含有層を形成する方法、ならびに粗ルテニウム含有層を使用した構造体および粗ルテニウム含有層を使用する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US6429127B1 (enExample) |
| EP (1) | EP1292992A2 (enExample) |
| JP (1) | JP2003535978A (enExample) |
| KR (1) | KR100644454B1 (enExample) |
| AU (1) | AU2001267039A1 (enExample) |
| WO (1) | WO2001095376A2 (enExample) |
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| JP2002222933A (ja) * | 2001-01-26 | 2002-08-09 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
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-
2000
- 2000-06-08 US US09/589,849 patent/US6429127B1/en not_active Expired - Fee Related
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2001
- 2001-06-07 JP JP2002502819A patent/JP2003535978A/ja active Pending
- 2001-06-07 AU AU2001267039A patent/AU2001267039A1/en not_active Abandoned
- 2001-06-07 EP EP01944651A patent/EP1292992A2/en not_active Withdrawn
- 2001-06-07 WO PCT/US2001/040867 patent/WO2001095376A2/en not_active Ceased
- 2001-06-07 KR KR1020027016735A patent/KR100644454B1/ko not_active Expired - Fee Related
- 2001-10-25 US US10/045,345 patent/US6897160B2/en not_active Expired - Fee Related
- 2001-10-25 US US10/042,025 patent/US6784504B2/en not_active Expired - Fee Related
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2005
- 2005-05-19 US US11/132,678 patent/US7144810B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7144810B2 (en) | 2006-12-05 |
| US6429127B1 (en) | 2002-08-06 |
| US6897160B2 (en) | 2005-05-24 |
| US6784504B2 (en) | 2004-08-31 |
| EP1292992A2 (en) | 2003-03-19 |
| KR20030010674A (ko) | 2003-02-05 |
| WO2001095376A3 (en) | 2002-06-27 |
| US20020058414A1 (en) | 2002-05-16 |
| AU2001267039A1 (en) | 2001-12-17 |
| KR100644454B1 (ko) | 2006-11-10 |
| US20020058415A1 (en) | 2002-05-16 |
| US20050208741A1 (en) | 2005-09-22 |
| WO2001095376A2 (en) | 2001-12-13 |
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