KR100633819B1 - 반도체 집적 회로 장치 - Google Patents

반도체 집적 회로 장치 Download PDF

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Publication number
KR100633819B1
KR100633819B1 KR1020040076422A KR20040076422A KR100633819B1 KR 100633819 B1 KR100633819 B1 KR 100633819B1 KR 1020040076422 A KR1020040076422 A KR 1020040076422A KR 20040076422 A KR20040076422 A KR 20040076422A KR 100633819 B1 KR100633819 B1 KR 100633819B1
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KR
South Korea
Prior art keywords
power supply
circuit
voltage
diode
resistor
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Expired - Fee Related
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KR1020040076422A
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English (en)
Korean (ko)
Other versions
KR20050031399A (ko
Inventor
후지우마사끼
다나까도모하루
Original Assignee
가부시끼가이샤 도시바
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Publication date
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Publication of KR20050031399A publication Critical patent/KR20050031399A/ko
Application granted granted Critical
Publication of KR100633819B1 publication Critical patent/KR100633819B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Electronic Switches (AREA)
KR1020040076422A 2003-09-29 2004-09-23 반도체 집적 회로 장치 Expired - Fee Related KR100633819B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003337549A JP2005109659A (ja) 2003-09-29 2003-09-29 半導体集積回路装置
JPJP-P-2003-00337549 2003-09-29

Publications (2)

Publication Number Publication Date
KR20050031399A KR20050031399A (ko) 2005-04-06
KR100633819B1 true KR100633819B1 (ko) 2006-10-16

Family

ID=34509660

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040076422A Expired - Fee Related KR100633819B1 (ko) 2003-09-29 2004-09-23 반도체 집적 회로 장치

Country Status (3)

Country Link
US (2) US7042787B2 (enExample)
JP (1) JP2005109659A (enExample)
KR (1) KR100633819B1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US7800932B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US20070164388A1 (en) * 2002-12-19 2007-07-19 Sandisk 3D Llc Memory cell comprising a diode fabricated in a low resistivity, programmed state
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
US7618850B2 (en) * 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US7339410B1 (en) * 2003-12-15 2008-03-04 National Semiconductor Corporation Method and system for providing startup delay
KR101044796B1 (ko) * 2004-01-13 2011-06-29 삼성전자주식회사 휴대용 데이터 저장 장치
JPWO2006070663A1 (ja) * 2004-12-28 2008-06-12 ローム株式会社 半導体装置および電子機器
US8102842B2 (en) * 2006-08-04 2012-01-24 Broadcom Corporation Integrated switch
US8165133B2 (en) * 2006-12-22 2012-04-24 Broadcom Corporation Physical layer device with integrated switch
KR100930830B1 (ko) * 2007-06-29 2009-12-10 삼성전자주식회사 전력관리 회로, 이를 포함하는 전력관리 시스템, 및전력관리 방법
KR20090030078A (ko) 2007-09-19 2009-03-24 삼성전자주식회사 부트 로딩 동작을 안전하게 수행하기 위한 반도체 메모리장치 및 그것의 부트 로딩 방법
JP5300291B2 (ja) * 2008-03-13 2013-09-25 スパンション エルエルシー 半導体システム及びその起動方法
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
US7830698B2 (en) * 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
JP5283078B2 (ja) * 2009-01-13 2013-09-04 セイコーインスツル株式会社 検出回路及びセンサ装置
TWI551978B (zh) * 2011-05-26 2016-10-01 華碩電腦股份有限公司 電腦裝置及其電源產生器
JP5562496B2 (ja) 2012-01-13 2014-07-30 三菱電機株式会社 Ｓｒａｍメモリカード及び電圧監視回路
JP6046522B2 (ja) 2013-03-05 2016-12-14 ルネサスエレクトロニクス株式会社 半導体装置及び無線通信装置
US20150042386A1 (en) * 2013-08-06 2015-02-12 Cirel Systems Private Limited Highly accurate power-on reset circuit with least delay
KR20150124521A (ko) * 2014-04-28 2015-11-06 에스케이하이닉스 주식회사 파워업 신호 생성회로 및 이를 포함하는 반도체 장치
KR20170035734A (ko) 2015-09-23 2017-03-31 에스케이하이닉스 주식회사 반도체장치
US9806256B1 (en) 2016-10-21 2017-10-31 Sandisk Technologies Llc Resistive memory device having sidewall spacer electrode and method of making thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04252489A (ja) * 1991-01-28 1992-09-08 Mitsubishi Electric Corp 半導体記憶装置
US5929672A (en) * 1995-06-16 1999-07-27 Rohm Co., Ltd. Power on reset circuit and one chip microcomputer using same
US5814995A (en) * 1996-09-12 1998-09-29 Telcom Semiconductor, Inc. Voltage detector for battery operated device
JPH10228768A (ja) * 1997-02-14 1998-08-25 Mitsubishi Electric Corp 半導体記憶装置
TW419828B (en) * 1997-02-26 2001-01-21 Toshiba Corp Semiconductor integrated circuit
US6204703B1 (en) * 1998-12-21 2001-03-20 Samsung Electronics Co., Ltd. Power on reset circuit with power noise immunity
JP3816788B2 (ja) 2001-11-22 2006-08-30 株式会社東芝 不揮発性半導体記憶装置
KR100463201B1 (ko) * 2002-05-28 2004-12-23 삼성전자주식회사 파워 검출 회로, 이를 이용한 플래시 메모리 장치, 그 플래시 메모리 장치의 파워-온 독출 신호 발생 방법 및 플래시 메모리 장치의 안정적인 파워-온 독출 방법

Also Published As

Publication number Publication date
US7180815B2 (en) 2007-02-20
KR20050031399A (ko) 2005-04-06
US7042787B2 (en) 2006-05-09
US20050083751A1 (en) 2005-04-21
US20060176088A1 (en) 2006-08-10
JP2005109659A (ja) 2005-04-21

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