KR100615067B1 - 입자조절방법 및 플라스마 처리 챔버 - Google Patents

입자조절방법 및 플라스마 처리 챔버 Download PDF

Info

Publication number
KR100615067B1
KR100615067B1 KR1019997002516A KR19997002516A KR100615067B1 KR 100615067 B1 KR100615067 B1 KR 100615067B1 KR 1019997002516 A KR1019997002516 A KR 1019997002516A KR 19997002516 A KR19997002516 A KR 19997002516A KR 100615067 B1 KR100615067 B1 KR 100615067B1
Authority
KR
South Korea
Prior art keywords
processing chamber
gas
substrate
distribution plate
gas distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019997002516A
Other languages
English (en)
Korean (ko)
Other versions
KR20000048585A (ko
Inventor
윅커토마스이.
마라쉰로버트에이.
Original Assignee
램 리서치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리서치 코포레이션 filed Critical 램 리서치 코포레이션
Publication of KR20000048585A publication Critical patent/KR20000048585A/ko
Application granted granted Critical
Publication of KR100615067B1 publication Critical patent/KR100615067B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1019997002516A 1996-09-30 1997-09-17 입자조절방법 및 플라스마 처리 챔버 Expired - Fee Related KR100615067B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/722,371 1996-09-30
US08/722,371 US5993594A (en) 1996-09-30 1996-09-30 Particle controlling method and apparatus for a plasma processing chamber
US8/722,371 1996-09-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020057006799A Division KR100665649B1 (ko) 1996-09-30 1997-09-17 입자조절방법 및 플라스마 처리 챔버

Publications (2)

Publication Number Publication Date
KR20000048585A KR20000048585A (ko) 2000-07-25
KR100615067B1 true KR100615067B1 (ko) 2006-08-22

Family

ID=24901571

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019997002516A Expired - Fee Related KR100615067B1 (ko) 1996-09-30 1997-09-17 입자조절방법 및 플라스마 처리 챔버
KR1020057006799A Expired - Fee Related KR100665649B1 (ko) 1996-09-30 1997-09-17 입자조절방법 및 플라스마 처리 챔버

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020057006799A Expired - Fee Related KR100665649B1 (ko) 1996-09-30 1997-09-17 입자조절방법 및 플라스마 처리 챔버

Country Status (7)

Country Link
US (2) US5993594A (https=)
EP (1) EP0938740B1 (https=)
JP (2) JP4263245B2 (https=)
KR (2) KR100615067B1 (https=)
AT (1) ATE416474T1 (https=)
DE (1) DE69739145D1 (https=)
WO (1) WO1998014980A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10115565B2 (en) 2012-03-02 2018-10-30 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010049196A1 (en) * 1997-09-09 2001-12-06 Roger Patrick Apparatus for improving etch uniformity and methods therefor
US6120660A (en) * 1998-02-11 2000-09-19 Silicon Genesis Corporation Removable liner design for plasma immersion ion implantation
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6123791A (en) * 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
US6074953A (en) * 1998-08-28 2000-06-13 Micron Technology, Inc. Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
US6491042B1 (en) * 1998-12-07 2002-12-10 Taiwan Semiconductor Manufacturing Company Post etching treatment process for high density oxide etcher
JP3542514B2 (ja) * 1999-01-19 2004-07-14 株式会社日立製作所 ドライエッチング装置
US6408786B1 (en) * 1999-09-23 2002-06-25 Lam Research Corporation Semiconductor processing equipment having tiled ceramic liner
JP2003533010A (ja) * 1999-09-30 2003-11-05 ラム リサーチ コーポレーション 前処理を行なったガス整流板
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6391146B1 (en) 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
US6440219B1 (en) * 2000-06-07 2002-08-27 Simplus Systems Corporation Replaceable shielding apparatus
DE10134806A1 (de) * 2000-08-10 2002-06-13 Stratos Lightwave Inc N D Ges Dampfphasenreaktionsvorrichtung mit Diaphragma für variable Stromverteilung
US7128804B2 (en) * 2000-12-29 2006-10-31 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US6805952B2 (en) 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
JP5079949B2 (ja) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
US6720259B2 (en) * 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US7479304B2 (en) * 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
TWI225668B (en) * 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
US7527706B2 (en) * 2002-10-10 2009-05-05 Tokyo Electron Limited Plasma processing apparatus, process vessel for plasma processing apparatus and dielectric plate for plasma processing apparatus
US20060226003A1 (en) * 2003-01-22 2006-10-12 John Mize Apparatus and methods for ionized deposition of a film or thin layer
US6749684B1 (en) 2003-06-10 2004-06-15 International Business Machines Corporation Method for improving CVD film quality utilizing polysilicon getterer
US7713380B2 (en) * 2004-01-27 2010-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for backside polymer reduction in dry-etch process
US8540843B2 (en) * 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US7138067B2 (en) * 2004-09-27 2006-11-21 Lam Research Corporation Methods and apparatus for tuning a set of plasma processing steps
US7578945B2 (en) * 2004-09-27 2009-08-25 Lam Research Corporation Method and apparatus for tuning a set of plasma processing steps
US20060151116A1 (en) * 2005-01-12 2006-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Focus rings, apparatus in chamber, contact hole and method of forming contact hole
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
US20060278520A1 (en) * 2005-06-13 2006-12-14 Lee Eal H Use of DC magnetron sputtering systems
US20070079936A1 (en) * 2005-09-29 2007-04-12 Applied Materials, Inc. Bonded multi-layer RF window
US20070235320A1 (en) 2006-04-06 2007-10-11 Applied Materials, Inc. Reactive sputtering chamber with gas distribution tubes
KR100798352B1 (ko) 2006-05-24 2008-01-28 주식회사 뉴파워 프라즈마 다중 배열된 방전실을 갖는 플라즈마 반응기 및 이를이용한 플라즈마 처리 시스템
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US7927713B2 (en) * 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
EP2183780A4 (en) 2007-08-02 2010-07-28 Applied Materials Inc THIN FILM TRANSISTORS WITH THIN FILM SEMICONDUCTOR MATERIALS
US8202393B2 (en) * 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
WO2009058235A2 (en) * 2007-10-31 2009-05-07 Lam Research Corporation High lifetime consumable silicon nitride-silicon dioxide plasma processing components
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
WO2009117438A2 (en) 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
KR101013511B1 (ko) 2008-08-12 2011-02-10 주식회사 맥시스 라이너 어셈블리 및 이를 구비하는 플라즈마 처리 장치
US8313612B2 (en) * 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
CN102640294B (zh) * 2009-09-24 2014-12-17 应用材料公司 将湿式处理用于源极-漏极金属蚀刻从而制造金属氧化物或金属氮氧化物tft的方法
US8840763B2 (en) 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US8741097B2 (en) * 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5592098B2 (ja) 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9313872B2 (en) 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5851681B2 (ja) * 2009-10-27 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
US9120985B2 (en) 2010-05-26 2015-09-01 Exxonmobil Research And Engineering Company Corrosion resistant gasifier components
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
JP5617817B2 (ja) * 2011-10-27 2014-11-05 パナソニック株式会社 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法
WO2013078420A2 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Symmetric rf return path liner
US20140097752A1 (en) * 2012-10-09 2014-04-10 Varian Semiconductor Equipment Associates, Inc. Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
JP2014149983A (ja) * 2013-02-01 2014-08-21 Toshiba Corp プラズマ処理装置用電極とその製造方法、及びプラズマ処理装置
US8893702B2 (en) 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
US10504700B2 (en) * 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
WO2017127163A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers
KR102251209B1 (ko) * 2016-06-15 2021-05-11 어플라이드 머티어리얼스, 인코포레이티드 고 전력 플라즈마 에칭 프로세스들을 위한 가스 분배 플레이트 조립체
US10504720B2 (en) 2016-11-29 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Etching using chamber with top plate formed of non-oxygen containing material
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN107600735A (zh) * 2017-10-22 2018-01-19 惠州市通用纸业有限公司 一种便于取拿纸巾的环保型双用纸巾包装袋
US11222794B2 (en) * 2018-03-30 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor fabrication system embedded with effective baking module
CN112071733B (zh) * 2019-06-10 2024-03-12 中微半导体设备(上海)股份有限公司 用于真空处理设备的内衬装置和真空处理设备
JP7426709B2 (ja) * 2019-10-23 2024-02-02 株式会社イー・エム・ディー プラズマ源
US12562355B2 (en) 2021-04-13 2026-02-24 Applied Materials, Inc. Isolator for processing chambers
KR102646591B1 (ko) * 2022-05-13 2024-03-12 세메스 주식회사 기판 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5494713A (en) * 1994-02-03 1996-02-27 Tokyo Electron Limited Method for treating surface of aluminum material and plasma treating apparatus

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445776A (en) * 1980-10-20 1995-08-29 Kabushiki Kaisha Kobe Seiko Sho Method for producing high density sintered silicon nitride (Si3 N.sub.4
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
ES2008682B3 (es) * 1986-11-25 1989-08-01 Battelle Memorial Institute Composicion en polvo de nitruro de silicio reforzado con filamentos cristalinos de carburo de silicio, y su empleo en la fabricacion de piezas sinterizadas.
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
JPH02229431A (ja) * 1989-03-02 1990-09-12 Fujitsu Ltd 半導体装置の製造方法
GB8905073D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
JPH05198534A (ja) * 1992-01-20 1993-08-06 Sony Corp ドライエッチング方法
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
JPH06310065A (ja) * 1993-04-26 1994-11-04 Nissin Electric Co Ltd イオン源装置
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
JP3276023B2 (ja) * 1993-10-20 2002-04-22 東京エレクトロン株式会社 プラズマ処理装置の制御方法
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
GB9321489D0 (en) * 1993-10-19 1993-12-08 Central Research Lab Ltd Plasma processing
TW296534B (https=) * 1993-12-17 1997-01-21 Tokyo Electron Co Ltd
US5580385A (en) * 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5762714A (en) * 1994-10-18 1998-06-09 Applied Materials, Inc. Plasma guard for chamber equipped with electrostatic chuck
US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5824605A (en) 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5494713A (en) * 1994-02-03 1996-02-27 Tokyo Electron Limited Method for treating surface of aluminum material and plasma treating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10115565B2 (en) 2012-03-02 2018-10-30 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
JP2008235924A (ja) 2008-10-02
KR20060029592A (ko) 2006-04-06
ATE416474T1 (de) 2008-12-15
KR100665649B1 (ko) 2007-01-09
KR20000048585A (ko) 2000-07-25
DE69739145D1 (de) 2009-01-15
JP4891287B2 (ja) 2012-03-07
US5993594A (en) 1999-11-30
US6251793B1 (en) 2001-06-26
EP0938740B1 (en) 2008-12-03
JP2001501379A (ja) 2001-01-30
WO1998014980A1 (en) 1998-04-09
JP4263245B2 (ja) 2009-05-13
EP0938740A1 (en) 1999-09-01

Similar Documents

Publication Publication Date Title
KR100615067B1 (ko) 입자조절방법 및 플라스마 처리 챔버
KR100602072B1 (ko) 오염 제어 방법 및 플라즈마 공정 챔버
US6464843B1 (en) Contamination controlling method and apparatus for a plasma processing chamber
US6033585A (en) Method and apparatus for preventing lightup of gas distribution holes
US6624082B2 (en) Systems and methods for two-sided etch of a semiconductor substrate
US6048798A (en) Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US20100099263A1 (en) Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
EP1145273B1 (en) Low contamination high density plasma etch chambers and methods for making the same
JP5122966B2 (ja) 表面波プラズマソース
KR100726381B1 (ko) 반도체 처리용 가스 분배 장치
US7629033B2 (en) Plasma processing method for forming a silicon nitride film on a silicon oxide film
KR102488490B1 (ko) 가스 분배 플레이트 열을 이용한 온도 램핑
KR20010080530A (ko) 반도체 처리를 위한 가스 분산장치
CN1221460A (zh) 等离子加工室的温控方法及设备
JPH0612771B2 (ja) Ｔｅｏｓプラズマｃｖｄ法
US20010009177A1 (en) Systems and methods for two-sided etch of a semiconductor substrate
KR20230142237A (ko) 기판 지지 유닛 및 이를 구비하는 기판 처리 장치

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

A107 Divisional application of patent
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20050321

Effective date: 20060529

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20060529

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 1999 7002516

Appeal request date: 20050321

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2005101001668

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20120806

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130808

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140805

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20150804

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160817

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160817