JP4263245B2 - パーティクル制御方法及びプラズマ処理チャンバー - Google Patents

パーティクル制御方法及びプラズマ処理チャンバー Download PDF

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Publication number
JP4263245B2
JP4263245B2 JP51655898A JP51655898A JP4263245B2 JP 4263245 B2 JP4263245 B2 JP 4263245B2 JP 51655898 A JP51655898 A JP 51655898A JP 51655898 A JP51655898 A JP 51655898A JP 4263245 B2 JP4263245 B2 JP 4263245B2
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gas
substrate
silicon nitride
processing chamber
plasma
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JP51655898A
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Japanese (ja)
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JP2001501379A5 (https=
JP2001501379A (ja
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ウイッカー，トーマス，イー．
マラスチィン，ロバート，エー．
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP51655898A 1996-09-30 1997-09-17 パーティクル制御方法及びプラズマ処理チャンバー Expired - Fee Related JP4263245B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/722,371 1996-09-30
US08/722,371 US5993594A (en) 1996-09-30 1996-09-30 Particle controlling method and apparatus for a plasma processing chamber
PCT/US1997/016133 WO1998014980A1 (en) 1996-09-30 1997-09-17 Particle controlling method and plasma processing chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008111896A Division JP4891287B2 (ja) 1996-09-30 2008-04-22 プラズマ処理チャンバー、チャンバー要素及びその製造方法

Publications (3)

Publication Number Publication Date
JP2001501379A JP2001501379A (ja) 2001-01-30
JP2001501379A5 JP2001501379A5 (https=) 2005-05-12
JP4263245B2 true JP4263245B2 (ja) 2009-05-13

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ID=24901571

Family Applications (2)

Application Number Title Priority Date Filing Date
JP51655898A Expired - Fee Related JP4263245B2 (ja) 1996-09-30 1997-09-17 パーティクル制御方法及びプラズマ処理チャンバー
JP2008111896A Expired - Fee Related JP4891287B2 (ja) 1996-09-30 2008-04-22 プラズマ処理チャンバー、チャンバー要素及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008111896A Expired - Fee Related JP4891287B2 (ja) 1996-09-30 2008-04-22 プラズマ処理チャンバー、チャンバー要素及びその製造方法

Country Status (7)

Country Link
US (2) US5993594A (https=)
EP (1) EP0938740B1 (https=)
JP (2) JP4263245B2 (https=)
KR (2) KR100615067B1 (https=)
AT (1) ATE416474T1 (https=)
DE (1) DE69739145D1 (https=)
WO (1) WO1998014980A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI821570B (zh) * 2019-06-10 2023-11-11 大陸商中微半導體設備（上海）股份有限公司 用於真空處理設備的內襯裝置和真空處理設備

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TWI821570B (zh) * 2019-06-10 2023-11-11 大陸商中微半導體設備（上海）股份有限公司 用於真空處理設備的內襯裝置和真空處理設備

Also Published As

Publication number Publication date
KR100615067B1 (ko) 2006-08-22
JP2008235924A (ja) 2008-10-02
KR20060029592A (ko) 2006-04-06
ATE416474T1 (de) 2008-12-15
KR100665649B1 (ko) 2007-01-09
KR20000048585A (ko) 2000-07-25
DE69739145D1 (de) 2009-01-15
JP4891287B2 (ja) 2012-03-07
US5993594A (en) 1999-11-30
US6251793B1 (en) 2001-06-26
EP0938740B1 (en) 2008-12-03
JP2001501379A (ja) 2001-01-30
WO1998014980A1 (en) 1998-04-09
EP0938740A1 (en) 1999-09-01

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