KR100603682B1 - 플라즈마 한정용 웨이퍼 영역 압력 제어 장치 및 방법 - Google Patents

플라즈마 한정용 웨이퍼 영역 압력 제어 장치 및 방법 Download PDF

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Publication number
KR100603682B1
KR100603682B1 KR1020037004805A KR20037004805A KR100603682B1 KR 100603682 B1 KR100603682 B1 KR 100603682B1 KR 1020037004805 A KR1020037004805 A KR 1020037004805A KR 20037004805 A KR20037004805 A KR 20037004805A KR 100603682 B1 KR100603682 B1 KR 100603682B1
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South Korea
Prior art keywords
confinement
movable
ring
confinement ring
block
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Expired - Fee Related
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KR1020037004805A
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English (en)
Korean (ko)
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KR20030051698A (ko
Inventor
한 태준
데이비드더블유. 벤징
앨버트알. 엘링보
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
KR1020037004805A 2000-10-04 2001-09-26 플라즈마 한정용 웨이퍼 영역 압력 제어 장치 및 방법 Expired - Fee Related KR100603682B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/684,695 2000-10-04
US09/684,695 US6492774B1 (en) 2000-10-04 2000-10-04 Wafer area pressure control for plasma confinement
PCT/US2001/042332 WO2002029848A2 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement

Publications (2)

Publication Number Publication Date
KR20030051698A KR20030051698A (ko) 2003-06-25
KR100603682B1 true KR100603682B1 (ko) 2006-07-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037004805A Expired - Fee Related KR100603682B1 (ko) 2000-10-04 2001-09-26 플라즈마 한정용 웨이퍼 영역 압력 제어 장치 및 방법

Country Status (9)

Country Link
US (3) US6492774B1 (https=)
EP (1) EP1323179B1 (https=)
JP (2) JP5100952B2 (https=)
KR (1) KR100603682B1 (https=)
CN (1) CN1322539C (https=)
AU (1) AU2001296916A1 (https=)
RU (1) RU2270492C2 (https=)
TW (1) TW587272B (https=)
WO (1) WO2002029848A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150008819A (ko) * 2013-07-15 2015-01-23 램 리써치 코포레이션 하이브리드 피처 에칭 및 베벨 에칭 시스템
US12494352B2 (en) 2021-04-29 2025-12-09 Samsung Electronics Co., Ltd. Plasma confinement ring, semiconductor manufacturing apparatus including the same, and method of manufacturing a semiconductor device using the same

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US6602381B1 (en) 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6936135B2 (en) * 2002-04-17 2005-08-30 Lam Research Corporation Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber
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US7364623B2 (en) * 2005-01-27 2008-04-29 Lam Research Corporation Confinement ring drive
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KR100621778B1 (ko) * 2005-06-17 2006-09-11 삼성전자주식회사 플라즈마 처리 장치
CN100362622C (zh) * 2005-12-07 2008-01-16 北京北方微电子基地设备工艺研究中心有限责任公司 下抽气式刻蚀装置
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US7578258B2 (en) * 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US8034409B2 (en) * 2006-12-20 2011-10-11 Lam Research Corporation Methods, apparatuses, and systems for fabricating three dimensional integrated circuits
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US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
CN101809717B (zh) * 2007-09-25 2012-10-10 朗姆研究公司 用于等离子处理设备的喷头电极总成的温度控制模块
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TWI516175B (zh) * 2008-02-08 2016-01-01 蘭姆研究公司 在電漿處理腔室中穩定壓力的方法及其程式儲存媒體
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US8992722B2 (en) * 2009-09-01 2015-03-31 Lam Research Corporation Direct drive arrangement to control confinement rings positioning and methods thereof
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JP5597463B2 (ja) * 2010-07-05 2014-10-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
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US9076826B2 (en) * 2010-09-24 2015-07-07 Lam Research Corporation Plasma confinement ring assembly for plasma processing chambers
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9530620B2 (en) 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
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US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
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US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
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CN105390362B (zh) * 2015-10-29 2017-06-23 上海华力微电子有限公司 用于更换压力控制阀上的o型圈的系统及方法
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US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US20170278679A1 (en) * 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
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CN118380372A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN110767568B (zh) * 2018-07-26 2022-05-27 北京北方华创微电子装备有限公司 压力调节组件、下电极装置、工艺腔室和半导体处理设备
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KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
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Publication number Priority date Publication date Assignee Title
KR20150008819A (ko) * 2013-07-15 2015-01-23 램 리써치 코포레이션 하이브리드 피처 에칭 및 베벨 에칭 시스템
KR102283688B1 (ko) * 2013-07-15 2021-07-30 램 리써치 코포레이션 하이브리드 피처 에칭 및 베벨 에칭 시스템
US12494352B2 (en) 2021-04-29 2025-12-09 Samsung Electronics Co., Ltd. Plasma confinement ring, semiconductor manufacturing apparatus including the same, and method of manufacturing a semiconductor device using the same

Also Published As

Publication number Publication date
AU2001296916A1 (en) 2002-04-15
US20020190657A1 (en) 2002-12-19
WO2002029848A3 (en) 2002-10-31
US7470627B2 (en) 2008-12-30
CN1479936A (zh) 2004-03-03
EP1323179B1 (en) 2013-11-06
KR20030051698A (ko) 2003-06-25
US20050051268A1 (en) 2005-03-10
JP2012178614A (ja) 2012-09-13
CN1322539C (zh) 2007-06-20
TW587272B (en) 2004-05-11
WO2002029848A2 (en) 2002-04-11
US6823815B2 (en) 2004-11-30
JP2004511096A (ja) 2004-04-08
RU2270492C2 (ru) 2006-02-20
US6492774B1 (en) 2002-12-10
EP1323179A2 (en) 2003-07-02
JP5100952B2 (ja) 2012-12-19

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