KR100592177B1 - 감열식 유량 검출 소자의 제조 방법 - Google Patents

감열식 유량 검출 소자의 제조 방법 Download PDF

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Publication number
KR100592177B1
KR100592177B1 KR1020040083109A KR20040083109A KR100592177B1 KR 100592177 B1 KR100592177 B1 KR 100592177B1 KR 1020040083109 A KR1020040083109 A KR 1020040083109A KR 20040083109 A KR20040083109 A KR 20040083109A KR 100592177 B1 KR100592177 B1 KR 100592177B1
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KR
South Korea
Prior art keywords
flow rate
rate detection
dummy pattern
detection element
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020040083109A
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English (en)
Korean (ko)
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KR20050107727A (ko
Inventor
카와이마사히로
Original Assignee
미츠비시덴키 가부시키가이샤
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Application filed by 미츠비시덴키 가부시키가이샤 filed Critical 미츠비시덴키 가부시키가이샤
Publication of KR20050107727A publication Critical patent/KR20050107727A/ko
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Publication of KR100592177B1 publication Critical patent/KR100592177B1/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Volume Flow (AREA)
  • Thermistors And Varistors (AREA)
KR1020040083109A 2004-05-10 2004-10-18 감열식 유량 검출 소자의 제조 방법 Expired - Fee Related KR100592177B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004139533A JP4515143B2 (ja) 2004-05-10 2004-05-10 感熱式流量検出素子の製造方法
JPJP-P-2004-00139533 2004-05-10

Publications (2)

Publication Number Publication Date
KR20050107727A KR20050107727A (ko) 2005-11-15
KR100592177B1 true KR100592177B1 (ko) 2006-06-26

Family

ID=35239924

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040083109A Expired - Fee Related KR100592177B1 (ko) 2004-05-10 2004-10-18 감열식 유량 검출 소자의 제조 방법

Country Status (4)

Country Link
US (1) US6995028B2 (https=)
JP (1) JP4515143B2 (https=)
KR (1) KR100592177B1 (https=)
DE (1) DE102004052634B4 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5857032B2 (ja) * 2011-03-02 2016-02-10 日立オートモティブシステムズ株式会社 熱式流量計
WO2013008273A1 (ja) * 2011-07-13 2013-01-17 日立オートモティブシステムズ株式会社 流量計
JP6475198B2 (ja) * 2016-06-29 2019-02-27 太陽誘電株式会社 可変容量デバイス及びアンテナ装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849872A (en) * 1972-10-24 1974-11-26 Ibm Contacting integrated circuit chip terminal through the wafer kerf
US4426773A (en) * 1981-05-15 1984-01-24 General Electric Ceramics, Inc. Array of electronic packaging substrates
JPS6397237U (https=) * 1986-12-12 1988-06-23
US4855253A (en) * 1988-01-29 1989-08-08 Hewlett-Packard Test method for random defects in electronic microstructures
US5389556A (en) * 1992-07-02 1995-02-14 Lsi Logic Corporation Individually powering-up unsingulated dies on a wafer
US5532174A (en) * 1994-04-22 1996-07-02 Lsi Logic Corporation Wafer level integrated circuit testing with a sacrificial metal layer
JPH10206205A (ja) * 1997-01-22 1998-08-07 Ricoh Co Ltd マイクロブリッジセンサの製造方法
US6744346B1 (en) * 1998-02-27 2004-06-01 Micron Technology, Inc. Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece
JP3513041B2 (ja) * 1999-01-25 2004-03-31 三菱電機株式会社 流量センサ
JP3455473B2 (ja) * 1999-07-14 2003-10-14 三菱電機株式会社 感熱式流量センサ
JP3461469B2 (ja) * 1999-07-27 2003-10-27 株式会社日立製作所 熱式空気流量センサ及び内燃機関制御装置
US6133054A (en) * 1999-08-02 2000-10-17 Motorola, Inc. Method and apparatus for testing an integrated circuit
JP2001056310A (ja) * 1999-08-20 2001-02-27 Sony Corp 半導体装置の検査方法
US6225141B1 (en) * 1999-09-03 2001-05-01 Johnson Controls Technology Co. Temperature sensor manufacturing process
JP4101518B2 (ja) * 2000-05-02 2008-06-18 株式会社日立製作所 空気流量計
JP5138134B2 (ja) * 2001-07-16 2013-02-06 株式会社デンソー 薄膜式センサの製造方法ならびにフローセンサの製造方法
US6844218B2 (en) * 2001-12-27 2005-01-18 Texas Instruments Incorporated Semiconductor wafer with grouped integrated circuit die having inter-die connections for group testing

Also Published As

Publication number Publication date
KR20050107727A (ko) 2005-11-15
US20050250239A1 (en) 2005-11-10
DE102004052634A1 (de) 2005-12-08
JP4515143B2 (ja) 2010-07-28
DE102004052634B4 (de) 2012-04-19
US6995028B2 (en) 2006-02-07
JP2005321294A (ja) 2005-11-17

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