DE102004052634B4 - Verfahren zur Herstellung von Wärme-Flussmesselementen - Google Patents

Verfahren zur Herstellung von Wärme-Flussmesselementen Download PDF

Info

Publication number
DE102004052634B4
DE102004052634B4 DE102004052634A DE102004052634A DE102004052634B4 DE 102004052634 B4 DE102004052634 B4 DE 102004052634B4 DE 102004052634 A DE102004052634 A DE 102004052634A DE 102004052634 A DE102004052634 A DE 102004052634A DE 102004052634 B4 DE102004052634 B4 DE 102004052634B4
Authority
DE
Germany
Prior art keywords
dummy pattern
heat
film
substrate
flow sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102004052634A
Other languages
German (de)
English (en)
Other versions
DE102004052634A1 (de
Inventor
Masahiro Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102004052634A1 publication Critical patent/DE102004052634A1/de
Application granted granted Critical
Publication of DE102004052634B4 publication Critical patent/DE102004052634B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Volume Flow (AREA)
  • Thermistors And Varistors (AREA)
DE102004052634A 2004-05-10 2004-10-29 Verfahren zur Herstellung von Wärme-Flussmesselementen Expired - Fee Related DE102004052634B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004139533A JP4515143B2 (ja) 2004-05-10 2004-05-10 感熱式流量検出素子の製造方法
JP2004-139533 2004-05-10

Publications (2)

Publication Number Publication Date
DE102004052634A1 DE102004052634A1 (de) 2005-12-08
DE102004052634B4 true DE102004052634B4 (de) 2012-04-19

Family

ID=35239924

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004052634A Expired - Fee Related DE102004052634B4 (de) 2004-05-10 2004-10-29 Verfahren zur Herstellung von Wärme-Flussmesselementen

Country Status (4)

Country Link
US (1) US6995028B2 (https=)
JP (1) JP4515143B2 (https=)
KR (1) KR100592177B1 (https=)
DE (1) DE102004052634B4 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5857032B2 (ja) * 2011-03-02 2016-02-10 日立オートモティブシステムズ株式会社 熱式流量計
WO2013008273A1 (ja) * 2011-07-13 2013-01-17 日立オートモティブシステムズ株式会社 流量計
JP6475198B2 (ja) * 2016-06-29 2019-02-27 太陽誘電株式会社 可変容量デバイス及びアンテナ装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849872A (en) * 1972-10-24 1974-11-26 Ibm Contacting integrated circuit chip terminal through the wafer kerf
US4426773A (en) * 1981-05-15 1984-01-24 General Electric Ceramics, Inc. Array of electronic packaging substrates
US4855253A (en) * 1988-01-29 1989-08-08 Hewlett-Packard Test method for random defects in electronic microstructures
DE19961129A1 (de) * 1999-07-14 2001-02-01 Mitsubishi Electric Corp Flusssensor eines thermischen Typs
US6225141B1 (en) * 1999-09-03 2001-05-01 Johnson Controls Technology Co. Temperature sensor manufacturing process

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6397237U (https=) * 1986-12-12 1988-06-23
US5389556A (en) * 1992-07-02 1995-02-14 Lsi Logic Corporation Individually powering-up unsingulated dies on a wafer
US5532174A (en) * 1994-04-22 1996-07-02 Lsi Logic Corporation Wafer level integrated circuit testing with a sacrificial metal layer
JPH10206205A (ja) * 1997-01-22 1998-08-07 Ricoh Co Ltd マイクロブリッジセンサの製造方法
US6744346B1 (en) * 1998-02-27 2004-06-01 Micron Technology, Inc. Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece
JP3513041B2 (ja) * 1999-01-25 2004-03-31 三菱電機株式会社 流量センサ
JP3461469B2 (ja) * 1999-07-27 2003-10-27 株式会社日立製作所 熱式空気流量センサ及び内燃機関制御装置
US6133054A (en) * 1999-08-02 2000-10-17 Motorola, Inc. Method and apparatus for testing an integrated circuit
JP2001056310A (ja) * 1999-08-20 2001-02-27 Sony Corp 半導体装置の検査方法
JP4101518B2 (ja) * 2000-05-02 2008-06-18 株式会社日立製作所 空気流量計
JP5138134B2 (ja) * 2001-07-16 2013-02-06 株式会社デンソー 薄膜式センサの製造方法ならびにフローセンサの製造方法
US6844218B2 (en) * 2001-12-27 2005-01-18 Texas Instruments Incorporated Semiconductor wafer with grouped integrated circuit die having inter-die connections for group testing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849872A (en) * 1972-10-24 1974-11-26 Ibm Contacting integrated circuit chip terminal through the wafer kerf
US4426773A (en) * 1981-05-15 1984-01-24 General Electric Ceramics, Inc. Array of electronic packaging substrates
US4855253A (en) * 1988-01-29 1989-08-08 Hewlett-Packard Test method for random defects in electronic microstructures
DE19961129A1 (de) * 1999-07-14 2001-02-01 Mitsubishi Electric Corp Flusssensor eines thermischen Typs
US6225141B1 (en) * 1999-09-03 2001-05-01 Johnson Controls Technology Co. Temperature sensor manufacturing process

Also Published As

Publication number Publication date
KR20050107727A (ko) 2005-11-15
US20050250239A1 (en) 2005-11-10
DE102004052634A1 (de) 2005-12-08
JP4515143B2 (ja) 2010-07-28
US6995028B2 (en) 2006-02-07
JP2005321294A (ja) 2005-11-17
KR100592177B1 (ko) 2006-06-26

Similar Documents

Publication Publication Date Title
EP1682882B1 (de) Sensoranordnung mit mehreren potentiometrischen sensoren
DE69831600T2 (de) Zusammengesetzte schaltmatrix zum prüfen und zum verbinden von zu testenden einrichtungen an messvorrichtungen
DE602004010116T2 (de) Verfahren und vorrichtung zum testen elektrischer eigenschaften eines zu prüfenden objekts
DE102010040224B4 (de) Laminiertes Gassensorelement, Gassensor mit einem laminierten Gassensorelement und Verfahren zum Herstellen eines laminierten Gassensorelements
DE60030333T2 (de) Einrichtung zur messung einer physikalischen grösse, verfahren zu ihrer herstellung und fahrzeugsteuersystem mit der einrichtung zur messung einer physikalischen grösse
DE19822123A1 (de) Verfahren und Vorrichtung zum Nachweis von Analyten
DE102014200128B4 (de) Gassensorelement und Gassensor
DE102015202176A1 (de) Gasdetektor
DE69634233T2 (de) Serienherstellung von Chips mit beschichteten selektiven Elektroden
DE102004052634B4 (de) Verfahren zur Herstellung von Wärme-Flussmesselementen
EP0764334B1 (de) Verfahren zur herstellung von bauelementen auf metallfilmbasis
DE102011076109A1 (de) Halbleitertestverfahren und -gerät und Halbleitervorrichtung
WO2008000400A2 (de) Verfahren und vorrichtung zum überprüfen der dichtigkeit von feuchtigkeitsbarrieren für implantate
DE102019126024B4 (de) Verfahren zum Testen eines Gassensors
DE102006022290B4 (de) Heizer mit integriertem Temperatursensor auf Träger
DE102006060113A1 (de) Sensor und Herstellungsverfahren eines Sensors
DE69623245T2 (de) Elektrochemisches Abscheideverfahren
DE19728171A1 (de) Halbleiterteststruktur zur Bewertung von Defekten am Isolierungsrand sowie Testverfahren unter Verwendung derselben
DE69022101T2 (de) Vorrichtung zum Aufsuchen von Störungen bei der Herstellung von phototechnisch realisierten Überzügen auf Leiterplatten.
DE2453578A1 (de) Verfahren zum feststellen von vollstaendig durchgehenden bohrungen in einer auf einem halbleitersubstrat angebrachten isolierschicht
DE102012108820B4 (de) Sensor, elektrisches Bauelement, Verfahren zur Bestimmung einer Temperatur oder einer Betriebsdauer eines elektrischen Bauelements und Verwendung einer intermetallischen Phase oder einer Phasengrenze als Sensor
DE102011085747A1 (de) Verfahren zur Überprüfung und/oder Justierung eines Dünnfilm-pH-Sensors und Selbstüberwachender und/oder -justierender Dünnfilm-pH-Sensor
DE102005043271B4 (de) Vorrichtung zur Messung der Temperatur in vertikal aufgebauten Halbleiterbauelementen bei laufendem Betrieb und kombinierte Teststruktur zur Erfassung der Zuverlässigkeit
DE102015204391A1 (de) Elektronische vorrichtung und verfahren zum herstellen derselben
DE102007056151A1 (de) Thermoelektrisches Bauelement und Verfahren zum Herstellen eines thermoelektrischen Bauelementes

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20120720

R084 Declaration of willingness to licence
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee