JP4515143B2 - 感熱式流量検出素子の製造方法 - Google Patents

感熱式流量検出素子の製造方法 Download PDF

Info

Publication number
JP4515143B2
JP4515143B2 JP2004139533A JP2004139533A JP4515143B2 JP 4515143 B2 JP4515143 B2 JP 4515143B2 JP 2004139533 A JP2004139533 A JP 2004139533A JP 2004139533 A JP2004139533 A JP 2004139533A JP 4515143 B2 JP4515143 B2 JP 4515143B2
Authority
JP
Japan
Prior art keywords
flow rate
rate detection
dummy pattern
manufacturing
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004139533A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005321294A5 (https=
JP2005321294A (ja
Inventor
正浩 河合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2004139533A priority Critical patent/JP4515143B2/ja
Priority to US10/944,390 priority patent/US6995028B2/en
Priority to KR1020040083109A priority patent/KR100592177B1/ko
Priority to DE102004052634A priority patent/DE102004052634B4/de
Publication of JP2005321294A publication Critical patent/JP2005321294A/ja
Publication of JP2005321294A5 publication Critical patent/JP2005321294A5/ja
Application granted granted Critical
Publication of JP4515143B2 publication Critical patent/JP4515143B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Volume Flow (AREA)
  • Thermistors And Varistors (AREA)
JP2004139533A 2004-05-10 2004-05-10 感熱式流量検出素子の製造方法 Expired - Fee Related JP4515143B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004139533A JP4515143B2 (ja) 2004-05-10 2004-05-10 感熱式流量検出素子の製造方法
US10/944,390 US6995028B2 (en) 2004-05-10 2004-09-20 Method of manufacturing thermal type flow sensing elements
KR1020040083109A KR100592177B1 (ko) 2004-05-10 2004-10-18 감열식 유량 검출 소자의 제조 방법
DE102004052634A DE102004052634B4 (de) 2004-05-10 2004-10-29 Verfahren zur Herstellung von Wärme-Flussmesselementen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004139533A JP4515143B2 (ja) 2004-05-10 2004-05-10 感熱式流量検出素子の製造方法

Publications (3)

Publication Number Publication Date
JP2005321294A JP2005321294A (ja) 2005-11-17
JP2005321294A5 JP2005321294A5 (https=) 2007-04-12
JP4515143B2 true JP4515143B2 (ja) 2010-07-28

Family

ID=35239924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004139533A Expired - Fee Related JP4515143B2 (ja) 2004-05-10 2004-05-10 感熱式流量検出素子の製造方法

Country Status (4)

Country Link
US (1) US6995028B2 (https=)
JP (1) JP4515143B2 (https=)
KR (1) KR100592177B1 (https=)
DE (1) DE102004052634B4 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5857032B2 (ja) * 2011-03-02 2016-02-10 日立オートモティブシステムズ株式会社 熱式流量計
JP5857050B2 (ja) * 2011-07-13 2016-02-10 日立オートモティブシステムズ株式会社 流量計
JP6475198B2 (ja) * 2016-06-29 2019-02-27 太陽誘電株式会社 可変容量デバイス及びアンテナ装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849872A (en) * 1972-10-24 1974-11-26 Ibm Contacting integrated circuit chip terminal through the wafer kerf
US4426773A (en) * 1981-05-15 1984-01-24 General Electric Ceramics, Inc. Array of electronic packaging substrates
JPS6397237U (https=) * 1986-12-12 1988-06-23
US4855253A (en) * 1988-01-29 1989-08-08 Hewlett-Packard Test method for random defects in electronic microstructures
US5389556A (en) * 1992-07-02 1995-02-14 Lsi Logic Corporation Individually powering-up unsingulated dies on a wafer
US5532174A (en) * 1994-04-22 1996-07-02 Lsi Logic Corporation Wafer level integrated circuit testing with a sacrificial metal layer
JPH10206205A (ja) * 1997-01-22 1998-08-07 Ricoh Co Ltd マイクロブリッジセンサの製造方法
US6744346B1 (en) * 1998-02-27 2004-06-01 Micron Technology, Inc. Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece
JP3513041B2 (ja) * 1999-01-25 2004-03-31 三菱電機株式会社 流量センサ
JP3455473B2 (ja) * 1999-07-14 2003-10-14 三菱電機株式会社 感熱式流量センサ
JP3461469B2 (ja) * 1999-07-27 2003-10-27 株式会社日立製作所 熱式空気流量センサ及び内燃機関制御装置
US6133054A (en) * 1999-08-02 2000-10-17 Motorola, Inc. Method and apparatus for testing an integrated circuit
JP2001056310A (ja) * 1999-08-20 2001-02-27 Sony Corp 半導体装置の検査方法
US6225141B1 (en) * 1999-09-03 2001-05-01 Johnson Controls Technology Co. Temperature sensor manufacturing process
JP4101518B2 (ja) * 2000-05-02 2008-06-18 株式会社日立製作所 空気流量計
JP5138134B2 (ja) * 2001-07-16 2013-02-06 株式会社デンソー 薄膜式センサの製造方法ならびにフローセンサの製造方法
US6844218B2 (en) * 2001-12-27 2005-01-18 Texas Instruments Incorporated Semiconductor wafer with grouped integrated circuit die having inter-die connections for group testing

Also Published As

Publication number Publication date
JP2005321294A (ja) 2005-11-17
DE102004052634B4 (de) 2012-04-19
US20050250239A1 (en) 2005-11-10
US6995028B2 (en) 2006-02-07
KR100592177B1 (ko) 2006-06-26
KR20050107727A (ko) 2005-11-15
DE102004052634A1 (de) 2005-12-08

Similar Documents

Publication Publication Date Title
JP4902679B2 (ja) 計測素子
US7180302B2 (en) Method and system for determining cracks and broken components in armor
JP2017161325A (ja) ガスセンサの検査方法およびガスセンサの製造方法
US20150377813A1 (en) Semiconductor gas sensor device and manufacturing method thereof
US20040144169A1 (en) Gasket flow sensing apparatus and method
CN105826216B (zh) 半导体评价装置、检查用半导体装置及卡盘台的检查方法
JP4515143B2 (ja) 感熱式流量検出素子の製造方法
KR102878020B1 (ko) 분석 유체의 농도 측정을 위한, 리세스에 의해 개방된 멤브레인을 가진 센서
US6845662B2 (en) Thermosensitive flow rate detecting element and method for the manufacture thereof
JP3853260B2 (ja) 評価用素子を含む半導体装置及び該評価用素子を用いた故障解析方法
JP2011174876A (ja) ダイアフラム部を有する基板を備えたセンサ装置、及び同センサ装置を複数備えたセンサ装置アレイ
CN106158743B (zh) 利用多感应像素检测多种气体的传感器的制造方法
JP4746609B2 (ja) 半導体装置及びその製造方法
CN1129529C (zh) 喷墨印头芯片及喷墨印头寿命与缺陷的检测方法
TWI445973B (zh) 電氣連接裝置及使用其之測試裝置
JP4487424B2 (ja) 薄膜部を有するセンサの検査方法
JP2002198576A (ja) 半導体装置
KR101820675B1 (ko) 다층 저항식 다점 온도측정 웨이퍼 센서 및 그 제조방법
CN111430255B (zh) 一种刻蚀深度的检测方法
JP5140917B2 (ja) 帯電量評価素子
KR100676612B1 (ko) 반도체 소자의 패드
JP4912056B2 (ja) プローバ用チャック
JP4179004B2 (ja) 半導体センサ装置
JP3524049B2 (ja) 配線パタ−ンの検査方法
KR101746558B1 (ko) 다층 저항식 다점 온도측정 웨이퍼 센서 및 그 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070223

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070223

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20091118

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091207

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100223

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100420

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100511

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100512

R150 Certificate of patent or registration of utility model

Ref document number: 4515143

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130521

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140521

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees