KR100578582B1 - 플래시 메모리에 응용하기 위한 램프 또는 스텝 게이트 채널 소거 - Google Patents

플래시 메모리에 응용하기 위한 램프 또는 스텝 게이트 채널 소거 Download PDF

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KR100578582B1
KR100578582B1 KR1020017014034A KR20017014034A KR100578582B1 KR 100578582 B1 KR100578582 B1 KR 100578582B1 KR 1020017014034 A KR1020017014034 A KR 1020017014034A KR 20017014034 A KR20017014034 A KR 20017014034A KR 100578582 B1 KR100578582 B1 KR 100578582B1
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South Korea
Prior art keywords
voltage
control gate
erase
well
applying
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Korean (ko)
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KR20020042760A (ko
Inventor
선카발리라비
해대드사미어에스.
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

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  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020017014034A 1999-05-06 2000-05-05 플래시 메모리에 응용하기 위한 램프 또는 스텝 게이트 채널 소거 Expired - Fee Related KR100578582B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/307,259 US6188609B1 (en) 1999-05-06 1999-05-06 Ramped or stepped gate channel erase for flash memory application
US09/307,259 1999-05-06
PCT/US2000/012343 WO2000068952A1 (en) 1999-05-06 2000-05-05 Ramped or stepped gate channel erase for flash memory application

Publications (2)

Publication Number Publication Date
KR20020042760A KR20020042760A (ko) 2002-06-07
KR100578582B1 true KR100578582B1 (ko) 2006-05-12

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KR1020017014034A Expired - Fee Related KR100578582B1 (ko) 1999-05-06 2000-05-05 플래시 메모리에 응용하기 위한 램프 또는 스텝 게이트 채널 소거

Country Status (7)

Country Link
US (1) US6188609B1 (https=)
EP (1) EP1175680B1 (https=)
JP (1) JP3811760B2 (https=)
KR (1) KR100578582B1 (https=)
DE (1) DE60001497T2 (https=)
TW (1) TW461095B (https=)
WO (1) WO2000068952A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100308192B1 (ko) * 1999-07-28 2001-11-01 윤종용 플래시 메모리 셀들의 과소거를 방지할 수 있는 플래시 메모리장치 및 그것의 소거 방법
US7366020B2 (en) * 1999-07-28 2008-04-29 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof
US6914827B2 (en) * 1999-07-28 2005-07-05 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
US6381179B1 (en) * 2000-02-24 2002-04-30 Advanced Micro Devices, Inc. Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure
DE60140039D1 (de) * 2001-02-05 2009-11-12 St Microelectronics Srl Löschverfahren für einen Flash-Speicher
US6385093B1 (en) * 2001-03-30 2002-05-07 Advanced Micro Devices, Inc. I/O partitioning system and methodology to reduce band-to-band tunneling current during erase
TW511203B (en) * 2001-04-20 2002-11-21 Macronix Int Co Ltd Erase method of flash memory
CN100481268C (zh) * 2001-06-25 2009-04-22 旺宏电子股份有限公司 一种闪存的抹除方法
KR100456596B1 (ko) * 2002-05-08 2004-11-09 삼성전자주식회사 부유트랩형 비휘발성 기억소자의 소거 방법
US6891752B1 (en) * 2002-07-31 2005-05-10 Advanced Micro Devices System and method for erase voltage control during multiple sector erase of a flash memory device
US6628545B1 (en) * 2002-11-26 2003-09-30 Advanced Micro Devices, Inc. Memory circuit for suppressing bit line current leakage
US7073104B1 (en) * 2003-03-10 2006-07-04 Advanced Micro Devices, Inc. Method and system for applying testing voltage signal
TWI247311B (en) * 2004-03-25 2006-01-11 Elite Semiconductor Esmt Circuit and method for preventing nonvolatile memory from over erasure
KR100781041B1 (ko) * 2006-11-06 2007-11-30 주식회사 하이닉스반도체 플래시 메모리 장치 및 그 소거 동작 제어 방법
EP2302635B1 (en) * 2009-09-18 2016-01-13 STMicroelectronics Srl Method for biasing an EEPROM non-volatile memory array and corresponding EEPROM non-volatile memory device
US8345485B2 (en) 2011-02-09 2013-01-01 Freescale Semiconductor, Inc. Erase ramp pulse width control for non-volatile memory
US8937837B2 (en) * 2012-05-08 2015-01-20 Sandisk Technologies Inc. Bit line BL isolation scheme during erase operation for non-volatile storage
US8891308B1 (en) 2013-09-11 2014-11-18 Sandisk Technologies Inc. Dynamic erase voltage step size selection for 3D non-volatile memory
KR102606497B1 (ko) 2016-06-27 2023-11-29 삼성전자주식회사 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 소거 방법
US10559368B1 (en) 2018-08-07 2020-02-11 Sandisk Technologies Llc Non-volatile memory with countermeasures for select gate disturb during program pre-charge

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5642311A (en) * 1995-10-24 1997-06-24 Advanced Micro Devices Overerase correction for flash memory which limits overerase and prevents erase verify errors
US5841165A (en) * 1995-11-21 1998-11-24 Programmable Microelectronics Corporation PMOS flash EEPROM cell with single poly
WO1998010471A1 (en) * 1996-09-05 1998-03-12 Macronix International Co., Ltd. Triple well floating gate memory and operating method with isolated channel program, preprogram and erase processes
WO1998047151A1 (en) 1997-04-11 1998-10-22 Programmable Silicon Solutions Electrically erasable nonvolatile memory
JP3175665B2 (ja) 1997-10-24 2001-06-11 日本電気株式会社 不揮発性半導体記憶装置のデータ消去方法
US5970460A (en) * 1997-12-05 1999-10-19 Lernout & Hauspie Speech Products N.V. Speech recognition and editing system
US5978277A (en) * 1998-04-06 1999-11-02 Aplus Flash Technology, Inc. Bias condition and X-decoder circuit of flash memory array

Also Published As

Publication number Publication date
EP1175680B1 (en) 2003-02-26
WO2000068952A1 (en) 2000-11-16
DE60001497D1 (de) 2003-04-03
DE60001497T2 (de) 2003-12-24
KR20020042760A (ko) 2002-06-07
US6188609B1 (en) 2001-02-13
JP2002544643A (ja) 2002-12-24
TW461095B (en) 2001-10-21
JP3811760B2 (ja) 2006-08-23
EP1175680A1 (en) 2002-01-30

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