KR100559926B1 - 비파괴성 판독 방법 및 장치 - Google Patents

비파괴성 판독 방법 및 장치 Download PDF

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Publication number
KR100559926B1
KR100559926B1 KR1020037007036A KR20037007036A KR100559926B1 KR 100559926 B1 KR100559926 B1 KR 100559926B1 KR 1020037007036 A KR1020037007036 A KR 1020037007036A KR 20037007036 A KR20037007036 A KR 20037007036A KR 100559926 B1 KR100559926 B1 KR 100559926B1
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South Korea
Prior art keywords
voltage
time dependent
capacitor
response
phase
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Korean (ko)
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KR20030059271A (ko
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펠-에릭 노르달
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띤 필름 일렉트로닉스 에이에스에이
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Computer Hardware Design (AREA)
  • Engineering & Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
  • Dram (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
  • Magnetic Record Carriers (AREA)
  • Glass Compositions (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Communication Control (AREA)
  • Testing Of Coins (AREA)
KR1020037007036A 2000-11-27 2001-11-27 비파괴성 판독 방법 및 장치 Expired - Fee Related KR100559926B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20006002 2000-11-27
NO20006002A NO316580B1 (no) 2000-11-27 2000-11-27 Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten
PCT/NO2001/000472 WO2002043070A1 (en) 2000-11-27 2001-11-27 A method for non-destructive readout and apparatus for use with the method

Publications (2)

Publication Number Publication Date
KR20030059271A KR20030059271A (ko) 2003-07-07
KR100559926B1 true KR100559926B1 (ko) 2006-03-13

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ID=19911847

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KR1020037007036A Expired - Fee Related KR100559926B1 (ko) 2000-11-27 2001-11-27 비파괴성 판독 방법 및 장치

Country Status (14)

Country Link
US (1) US6804139B2 (cg-RX-API-DMAC10.html)
EP (1) EP1346366B1 (cg-RX-API-DMAC10.html)
JP (1) JP3944450B2 (cg-RX-API-DMAC10.html)
KR (1) KR100559926B1 (cg-RX-API-DMAC10.html)
CN (1) CN1329920C (cg-RX-API-DMAC10.html)
AT (1) ATE294444T1 (cg-RX-API-DMAC10.html)
AU (2) AU2002223164B2 (cg-RX-API-DMAC10.html)
CA (1) CA2429366C (cg-RX-API-DMAC10.html)
DE (1) DE60110461T2 (cg-RX-API-DMAC10.html)
DK (1) DK1346366T3 (cg-RX-API-DMAC10.html)
ES (1) ES2239177T3 (cg-RX-API-DMAC10.html)
NO (1) NO316580B1 (cg-RX-API-DMAC10.html)
RU (1) RU2250518C1 (cg-RX-API-DMAC10.html)
WO (1) WO2002043070A1 (cg-RX-API-DMAC10.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756620B2 (en) 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
CN1303692C (zh) * 2002-09-04 2007-03-07 松下电器产业株式会社 半导体存储装置及其制造方法和驱动方法
US7187600B2 (en) * 2004-09-22 2007-03-06 Freescale Semiconductor, Inc. Method and apparatus for protecting an integrated circuit from erroneous operation
RU2383945C2 (ru) 2006-06-09 2010-03-10 Юрий Генрихович Кригер Методы неразрушаемого считывания информации с ферроэлектрических элементов памяти
US7929338B2 (en) * 2009-02-24 2011-04-19 International Business Machines Corporation Memory reading method for resistance drift mitigation
US8488361B2 (en) * 2011-02-01 2013-07-16 Stmicroelectronics S.R.L. Memory support provided with memory elements of ferroelectric material and improved non-destructive reading method thereof
US8837195B2 (en) * 2012-09-25 2014-09-16 Palo Alto Research Center Incorporated Systems and methods for reading ferroelectric memories
US9460770B1 (en) 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells
EP4625415A1 (en) * 2024-03-28 2025-10-01 IMEC vzw A method and a memory device for symmetric non-destructive read-out of a ferroelectric memory cell

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3132326A (en) 1960-03-16 1964-05-05 Control Data Corp Ferroelectric data storage system and method
US4068217A (en) * 1975-06-30 1978-01-10 International Business Machines Corporation Ultimate density non-volatile cross-point semiconductor memory array
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5151877A (en) 1990-12-19 1992-09-29 The Charles Stark Draper Lab., Inc. Ferroelectric space charge capacitor memory system
US5530667A (en) 1991-03-01 1996-06-25 Olympus Optical Co., Ltd. Ferroelectric memory device
US5262982A (en) * 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
JPH05129622A (ja) * 1991-10-31 1993-05-25 Olympus Optical Co Ltd 強誘電体メモリ装置
RU2127005C1 (ru) * 1993-01-27 1999-02-27 Самсунг Электроникс Ко., Лтд. Полупроводниковый прибор и способ его изготовления (варианты)
JPH06275062A (ja) * 1993-03-19 1994-09-30 Olympus Optical Co Ltd 強誘電体メモリ装置
US5666305A (en) * 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
JP3570692B2 (ja) * 1994-01-18 2004-09-29 ローム株式会社 不揮発性メモリ
US5729488A (en) * 1994-08-26 1998-03-17 Hughes Electronics Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect
KR100206713B1 (ko) * 1996-10-09 1999-07-01 윤종용 강유전체 메모리 장치에서의 비파괴적 억세싱 방법 및 그 억세싱 회로
RU2121174C1 (ru) * 1997-09-05 1998-10-27 Александр Анатольевич Мохнатюк Способ создания оптической памяти
EP1094469A1 (de) * 1999-10-22 2001-04-25 Infineon Technologies AG Anordnung zur Auswertung eines aus einem ferroelektrischen Speicherkondensator ausgelesenen Signales
US6574134B1 (en) * 2002-01-18 2003-06-03 Macronix International Co., Ltd. Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability

Also Published As

Publication number Publication date
WO2002043070A1 (en) 2002-05-30
US6804139B2 (en) 2004-10-12
EP1346366B1 (en) 2005-04-27
NO20006002D0 (no) 2000-11-27
CA2429366A1 (en) 2002-05-30
US20020191435A1 (en) 2002-12-19
EP1346366A1 (en) 2003-09-24
HK1063687A1 (en) 2005-01-07
CN1488147A (zh) 2004-04-07
DE60110461T2 (de) 2006-04-27
JP2004515023A (ja) 2004-05-20
AU2002223164B2 (en) 2005-02-17
CA2429366C (en) 2007-02-13
DE60110461D1 (de) 2005-06-02
KR20030059271A (ko) 2003-07-07
NO316580B1 (no) 2004-02-23
CN1329920C (zh) 2007-08-01
RU2250518C1 (ru) 2005-04-20
ES2239177T3 (es) 2005-09-16
DK1346366T3 (da) 2005-08-01
NO20006002L (no) 2002-05-28
AU2316402A (en) 2002-06-03
ATE294444T1 (de) 2005-05-15
JP3944450B2 (ja) 2007-07-11

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