NO20006002L - Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten - Google Patents

Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten

Info

Publication number
NO20006002L
NO20006002L NO20006002A NO20006002A NO20006002L NO 20006002 L NO20006002 L NO 20006002L NO 20006002 A NO20006002 A NO 20006002A NO 20006002 A NO20006002 A NO 20006002A NO 20006002 L NO20006002 L NO 20006002L
Authority
NO
Norway
Prior art keywords
phase
memory cell
capacitor
logic state
signal
Prior art date
Application number
NO20006002A
Other languages
English (en)
Other versions
NO316580B1 (no
NO20006002D0 (no
Inventor
Per-Erik Nordal
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20006002A priority Critical patent/NO316580B1/no
Publication of NO20006002D0 publication Critical patent/NO20006002D0/no
Priority to DE60110461T priority patent/DE60110461T2/de
Priority to KR1020037007036A priority patent/KR100559926B1/ko
Priority to CA002429366A priority patent/CA2429366C/en
Priority to EP01997813A priority patent/EP1346366B1/en
Priority to AT01997813T priority patent/ATE294444T1/de
Priority to PCT/NO2001/000472 priority patent/WO2002043070A1/en
Priority to DK01997813T priority patent/DK1346366T3/da
Priority to AU2002223164A priority patent/AU2002223164B2/en
Priority to RU2003119443/09A priority patent/RU2250518C1/ru
Priority to US10/169,381 priority patent/US6804139B2/en
Priority to AU2316402A priority patent/AU2316402A/xx
Priority to ES01997813T priority patent/ES2239177T3/es
Priority to CNB018222048A priority patent/CN1329920C/zh
Priority to JP2002544724A priority patent/JP3944450B2/ja
Publication of NO20006002L publication Critical patent/NO20006002L/no
Publication of NO316580B1 publication Critical patent/NO316580B1/no
Priority to HK04106328A priority patent/HK1063687A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
NO20006002A 2000-11-27 2000-11-27 Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten NO316580B1 (no)

Priority Applications (16)

Application Number Priority Date Filing Date Title
NO20006002A NO316580B1 (no) 2000-11-27 2000-11-27 Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten
JP2002544724A JP3944450B2 (ja) 2000-11-27 2001-11-27 非破壊的読出しの方法とこの方法を利用する装置
AU2002223164A AU2002223164B2 (en) 2000-11-27 2001-11-27 A method for non-destructive readout and apparatus for use with the method
US10/169,381 US6804139B2 (en) 2000-11-27 2001-11-27 Method for non-destructive readout and apparatus for use with the method
CA002429366A CA2429366C (en) 2000-11-27 2001-11-27 A method for non-destructive readout and apparatus for use with the method
EP01997813A EP1346366B1 (en) 2000-11-27 2001-11-27 A method for non-destructive readout and apparatus for use with the method
AT01997813T ATE294444T1 (de) 2000-11-27 2001-11-27 Verfahren zum zerstörungsfreien auslesen und vorrichtung zur verwendung mit dem verfahren
PCT/NO2001/000472 WO2002043070A1 (en) 2000-11-27 2001-11-27 A method for non-destructive readout and apparatus for use with the method
DK01997813T DK1346366T3 (da) 2000-11-27 2001-11-27 En fremgangsmåde til ikke-destruktiv udlæsning og et apparatur til anvendelse i forbindelse med fremgangsmåden
DE60110461T DE60110461T2 (de) 2000-11-27 2001-11-27 Verfahren zum zerstörungsfreien auslesen und vorrichtung zur verwendung mit dem verfahren
RU2003119443/09A RU2250518C1 (ru) 2000-11-27 2001-11-27 Способ неразрушающего считывания данных и устройство для осуществления данного способа
KR1020037007036A KR100559926B1 (ko) 2000-11-27 2001-11-27 비파괴성 판독 방법 및 장치
AU2316402A AU2316402A (en) 2000-11-27 2001-11-27 A method for non-destructive readout and apparatus for use with the method
ES01997813T ES2239177T3 (es) 2000-11-27 2001-11-27 Procedimiento de lectura no destructiva y aparato para utilizar con el procedimiento.
CNB018222048A CN1329920C (zh) 2000-11-27 2001-11-27 用于非破坏性读出的方法和使用该方法的设备
HK04106328A HK1063687A1 (en) 2000-11-27 2004-08-24 A method for non-destructive readout and apparatusfor use with the mehod

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20006002A NO316580B1 (no) 2000-11-27 2000-11-27 Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten

Publications (3)

Publication Number Publication Date
NO20006002D0 NO20006002D0 (no) 2000-11-27
NO20006002L true NO20006002L (no) 2002-05-28
NO316580B1 NO316580B1 (no) 2004-02-23

Family

ID=19911847

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20006002A NO316580B1 (no) 2000-11-27 2000-11-27 Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten

Country Status (15)

Country Link
US (1) US6804139B2 (no)
EP (1) EP1346366B1 (no)
JP (1) JP3944450B2 (no)
KR (1) KR100559926B1 (no)
CN (1) CN1329920C (no)
AT (1) ATE294444T1 (no)
AU (2) AU2002223164B2 (no)
CA (1) CA2429366C (no)
DE (1) DE60110461T2 (no)
DK (1) DK1346366T3 (no)
ES (1) ES2239177T3 (no)
HK (1) HK1063687A1 (no)
NO (1) NO316580B1 (no)
RU (1) RU2250518C1 (no)
WO (1) WO2002043070A1 (no)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756620B2 (en) 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
CN1303692C (zh) * 2002-09-04 2007-03-07 松下电器产业株式会社 半导体存储装置及其制造方法和驱动方法
US7187600B2 (en) * 2004-09-22 2007-03-06 Freescale Semiconductor, Inc. Method and apparatus for protecting an integrated circuit from erroneous operation
RU2383945C2 (ru) 2006-06-09 2010-03-10 Юрий Генрихович Кригер Методы неразрушаемого считывания информации с ферроэлектрических элементов памяти
US7929338B2 (en) * 2009-02-24 2011-04-19 International Business Machines Corporation Memory reading method for resistance drift mitigation
US8488361B2 (en) * 2011-02-01 2013-07-16 Stmicroelectronics S.R.L. Memory support provided with memory elements of ferroelectric material and improved non-destructive reading method thereof
US8837195B2 (en) * 2012-09-25 2014-09-16 Palo Alto Research Center Incorporated Systems and methods for reading ferroelectric memories
US9460770B1 (en) 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3132326A (en) 1960-03-16 1964-05-05 Control Data Corp Ferroelectric data storage system and method
US4068217A (en) * 1975-06-30 1978-01-10 International Business Machines Corporation Ultimate density non-volatile cross-point semiconductor memory array
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5151877A (en) 1990-12-19 1992-09-29 The Charles Stark Draper Lab., Inc. Ferroelectric space charge capacitor memory system
US5530667A (en) * 1991-03-01 1996-06-25 Olympus Optical Co., Ltd. Ferroelectric memory device
US5262982A (en) 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
JPH05129622A (ja) 1991-10-31 1993-05-25 Olympus Optical Co Ltd 強誘電体メモリ装置
JPH06275062A (ja) 1993-03-19 1994-09-30 Olympus Optical Co Ltd 強誘電体メモリ装置
US5666305A (en) 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
US5729488A (en) * 1994-08-26 1998-03-17 Hughes Electronics Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect
KR100206713B1 (ko) * 1996-10-09 1999-07-01 윤종용 강유전체 메모리 장치에서의 비파괴적 억세싱 방법 및 그 억세싱 회로
EP1094469A1 (de) * 1999-10-22 2001-04-25 Infineon Technologies AG Anordnung zur Auswertung eines aus einem ferroelektrischen Speicherkondensator ausgelesenen Signales
US6574134B1 (en) * 2002-01-18 2003-06-03 Macronix International Co., Ltd. Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability

Also Published As

Publication number Publication date
AU2002223164B2 (en) 2005-02-17
JP3944450B2 (ja) 2007-07-11
KR20030059271A (ko) 2003-07-07
EP1346366B1 (en) 2005-04-27
WO2002043070A1 (en) 2002-05-30
DK1346366T3 (da) 2005-08-01
CN1329920C (zh) 2007-08-01
KR100559926B1 (ko) 2006-03-13
AU2316402A (en) 2002-06-03
US6804139B2 (en) 2004-10-12
EP1346366A1 (en) 2003-09-24
DE60110461T2 (de) 2006-04-27
DE60110461D1 (de) 2005-06-02
CN1488147A (zh) 2004-04-07
ES2239177T3 (es) 2005-09-16
US20020191435A1 (en) 2002-12-19
RU2250518C1 (ru) 2005-04-20
NO316580B1 (no) 2004-02-23
JP2004515023A (ja) 2004-05-20
CA2429366A1 (en) 2002-05-30
ATE294444T1 (de) 2005-05-15
HK1063687A1 (en) 2005-01-07
CA2429366C (en) 2007-02-13
NO20006002D0 (no) 2000-11-27

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