KR100557666B1 - 기판 지지 및 플라즈마 여기용 서셉터 및 그 서셉터를 포함하는 박막 증착 장치 - Google Patents
기판 지지 및 플라즈마 여기용 서셉터 및 그 서셉터를 포함하는 박막 증착 장치 Download PDFInfo
- Publication number
- KR100557666B1 KR100557666B1 KR1020007003777A KR20007003777A KR100557666B1 KR 100557666 B1 KR100557666 B1 KR 100557666B1 KR 1020007003777 A KR1020007003777 A KR 1020007003777A KR 20007003777 A KR20007003777 A KR 20007003777A KR 100557666 B1 KR100557666 B1 KR 100557666B1
- Authority
- KR
- South Korea
- Prior art keywords
- susceptor
- thin film
- showerhead
- power supply
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8/948,279 | 1997-10-09 | ||
| US08/948,279 US6024044A (en) | 1997-10-09 | 1997-10-09 | Dual frequency excitation of plasma for film deposition |
| US08/948,279 | 1997-10-09 | ||
| PCT/US1998/020996 WO1999019537A1 (en) | 1997-10-09 | 1998-10-06 | Dual frequency excitation of plasma for film deposition |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057025432A Division KR100783200B1 (ko) | 1997-10-09 | 1998-10-06 | 박막 증착 장치 및 기판 플라즈마 처리 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010030991A KR20010030991A (ko) | 2001-04-16 |
| KR100557666B1 true KR100557666B1 (ko) | 2006-03-10 |
Family
ID=25487591
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020007003777A Ceased KR100557666B1 (ko) | 1997-10-09 | 1998-10-06 | 기판 지지 및 플라즈마 여기용 서셉터 및 그 서셉터를 포함하는 박막 증착 장치 |
| KR1020057025432A Ceased KR100783200B1 (ko) | 1997-10-09 | 1998-10-06 | 박막 증착 장치 및 기판 플라즈마 처리 장치 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057025432A Ceased KR100783200B1 (ko) | 1997-10-09 | 1998-10-06 | 박막 증착 장치 및 기판 플라즈마 처리 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6024044A (https=) |
| EP (1) | EP1019563A1 (https=) |
| JP (1) | JP4371576B2 (https=) |
| KR (2) | KR100557666B1 (https=) |
| CN (1) | CN1113978C (https=) |
| TW (1) | TW438901B (https=) |
| WO (1) | WO1999019537A1 (https=) |
Families Citing this family (123)
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| US6642149B2 (en) * | 1998-09-16 | 2003-11-04 | Tokyo Electron Limited | Plasma processing method |
| JP3818561B2 (ja) * | 1998-10-29 | 2006-09-06 | エルジー フィリップス エルシーディー カンパニー リミテッド | シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法 |
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| US6770166B1 (en) * | 2001-06-29 | 2004-08-03 | Lam Research Corp. | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor |
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| JP4129855B2 (ja) * | 2001-12-13 | 2008-08-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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- 1998-10-06 KR KR1020007003777A patent/KR100557666B1/ko not_active Ceased
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- 1998-10-06 KR KR1020057025432A patent/KR100783200B1/ko not_active Ceased
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Also Published As
| Publication number | Publication date |
|---|---|
| KR100783200B1 (ko) | 2007-12-06 |
| WO1999019537A1 (en) | 1999-04-22 |
| KR20060007448A (ko) | 2006-01-24 |
| WO1999019537A9 (en) | 1999-07-29 |
| CN1113978C (zh) | 2003-07-09 |
| TW438901B (en) | 2001-06-07 |
| US6024044A (en) | 2000-02-15 |
| CN1274395A (zh) | 2000-11-22 |
| JP2001520457A (ja) | 2001-10-30 |
| EP1019563A1 (en) | 2000-07-19 |
| JP4371576B2 (ja) | 2009-11-25 |
| KR20010030991A (ko) | 2001-04-16 |
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