KR100554486B1 - 기판 표면 상에 금속 함유 막을 도포시키는 방법 - Google Patents

기판 표면 상에 금속 함유 막을 도포시키는 방법 Download PDF

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Publication number
KR100554486B1
KR100554486B1 KR1020017002581A KR20017002581A KR100554486B1 KR 100554486 B1 KR100554486 B1 KR 100554486B1 KR 1020017002581 A KR1020017002581 A KR 1020017002581A KR 20017002581 A KR20017002581 A KR 20017002581A KR 100554486 B1 KR100554486 B1 KR 100554486B1
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compound
formula
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KR20010073064A (ko
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슈테판 우렌브록
브라이언 에이. 바아트스트라
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마이크론 테크놀로지 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/002—Osmium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/002—Osmium compounds
    • C07F15/0026—Osmium compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/0046—Ruthenium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/0046—Ruthenium compounds
    • C07F15/0053—Ruthenium compounds without a metal-carbon linkage

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020017002581A 1998-08-27 1999-07-28 기판 표면 상에 금속 함유 막을 도포시키는 방법 Expired - Fee Related KR100554486B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/141,431 US5962716A (en) 1998-08-27 1998-08-27 Methods for preparing ruthenium and osmium compounds
US09/141,431 1998-08-27

Publications (2)

Publication Number Publication Date
KR20010073064A KR20010073064A (ko) 2001-07-31
KR100554486B1 true KR100554486B1 (ko) 2006-03-03

Family

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KR1020017002581A Expired - Fee Related KR100554486B1 (ko) 1998-08-27 1999-07-28 기판 표면 상에 금속 함유 막을 도포시키는 방법

Country Status (7)

Country Link
US (4) US5962716A (enExample)
JP (1) JP2002523516A (enExample)
KR (1) KR100554486B1 (enExample)
AU (1) AU5236599A (enExample)
MY (1) MY126518A (enExample)
TW (1) TW452603B (enExample)
WO (1) WO2000012520A1 (enExample)

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US5962716A (en) * 1998-08-27 1999-10-05 Micron Technology, Inc. Methods for preparing ruthenium and osmium compounds
US6197628B1 (en) 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
US6239028B1 (en) 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6284655B1 (en) 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
US6323081B1 (en) * 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6319832B1 (en) * 1999-02-19 2001-11-20 Micron Technology, Inc. Methods of making semiconductor devices
US6329286B1 (en) 1999-04-27 2001-12-11 Micron Technology, Inc. Methods for forming conformal iridium layers on substrates
US6380080B2 (en) * 2000-03-08 2002-04-30 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6429127B1 (en) * 2000-06-08 2002-08-06 Micron Technology, Inc. Methods for forming rough ruthenium-containing layers and structures/methods using same
US6461909B1 (en) 2000-08-30 2002-10-08 Micron Technology, Inc. Process for fabricating RuSixOy-containing adhesion layers
US6903005B1 (en) * 2000-08-30 2005-06-07 Micron Technology, Inc. Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics
US6660631B1 (en) * 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
JP2002212112A (ja) * 2001-01-22 2002-07-31 Tanaka Kikinzoku Kogyo Kk 化学気相蒸着用のルテニウム化合物並びにルテニウム薄膜及びルテニウム化合物薄膜の化学気相蒸着方法。
US6399492B1 (en) 2001-03-15 2002-06-04 Micron Technology, Inc. Ruthenium silicide processing methods
KR100727372B1 (ko) 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법
US6420583B1 (en) * 2001-09-27 2002-07-16 Praxair Technology, Inc Methods of synthesizing ruthenium and osmium compounds
KR100476556B1 (ko) * 2002-04-11 2005-03-18 삼성전기주식회사 압전트랜스 장치, 압전트랜스 하우징 및 그 제조방법
US7398209B2 (en) * 2002-06-03 2008-07-08 Voicebox Technologies, Inc. Systems and methods for responding to natural language speech utterance
US7404985B2 (en) 2002-06-04 2008-07-29 Applied Materials, Inc. Noble metal layer formation for copper film deposition
US7910165B2 (en) * 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7264846B2 (en) * 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US6737313B1 (en) 2003-04-16 2004-05-18 Micron Technology, Inc. Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US7265048B2 (en) * 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US8197898B2 (en) * 2005-03-29 2012-06-12 Tokyo Electron Limited Method and system for depositing a layer from light-induced vaporization of a solid precursor
US7850779B2 (en) 2005-11-04 2010-12-14 Applied Materisals, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7833358B2 (en) * 2006-04-07 2010-11-16 Applied Materials, Inc. Method of recovering valuable material from exhaust gas stream of a reaction chamber
CN101223298B (zh) * 2006-09-22 2011-09-07 乔治洛德方法研究和开发液化空气有限公司 含钌膜的沉积方法
EP1935897B1 (en) * 2006-12-22 2011-03-02 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude New organo-Ruthenium compound, the process for its preparation and its use as a ruthenium precursor to manufacture ruthenium based film coated metal electrodes
US20080152793A1 (en) * 2006-12-22 2008-06-26 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitaion Des Procedes Georges Claude Method for the deposition of a ruthenium containing film with aryl and diene containing complexes
US20090028745A1 (en) * 2007-07-24 2009-01-29 Julien Gatineau Ruthenium precursor with two differing ligands for use in semiconductor applications
US7737028B2 (en) * 2007-09-28 2010-06-15 Applied Materials, Inc. Selective ruthenium deposition on copper materials
WO2009057064A2 (en) * 2007-10-29 2009-05-07 L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Ruthenium and osmium precursor synthesis method
US8124528B2 (en) 2008-04-10 2012-02-28 Micron Technology, Inc. Method for forming a ruthenium film
US20110045171A1 (en) * 2009-08-19 2011-02-24 International Business Machines Corporation Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper
US8357614B2 (en) 2010-04-19 2013-01-22 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Ruthenium-containing precursors for CVD and ALD
JP5992764B2 (ja) * 2012-08-20 2016-09-14 田中貴金属工業株式会社 ルテニウム錯体からなる化学蒸着原料及びその製造方法並びに化学蒸着方法
WO2021153640A1 (ja) * 2020-01-31 2021-08-05 田中貴金属工業株式会社 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
TWI777391B (zh) 2020-01-31 2022-09-11 日商田中貴金屬工業股份有限公司 包含有機釕化合物之化學蒸鍍用原料及使用該化學蒸鍍用原料之化學蒸鍍法
TWI789848B (zh) 2020-08-04 2023-01-11 嶺南大學校產學協力團 釕薄膜之形成方法

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Also Published As

Publication number Publication date
WO2000012520A1 (en) 2000-03-09
US6872420B2 (en) 2005-03-29
US5962716A (en) 1999-10-05
JP2002523516A (ja) 2002-07-30
AU5236599A (en) 2000-03-21
US20030212285A1 (en) 2003-11-13
TW452603B (en) 2001-09-01
US6114557A (en) 2000-09-05
MY126518A (en) 2006-10-31
KR20010073064A (ko) 2001-07-31
US6576778B1 (en) 2003-06-10

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