KR100545033B1 - 에칭종점판정방법 및 에칭종점판정장치 - Google Patents
에칭종점판정방법 및 에칭종점판정장치 Download PDFInfo
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- KR100545033B1 KR100545033B1 KR1019990053755A KR19990053755A KR100545033B1 KR 100545033 B1 KR100545033 B1 KR 100545033B1 KR 1019990053755 A KR1019990053755 A KR 1019990053755A KR 19990053755 A KR19990053755 A KR 19990053755A KR 100545033 B1 KR100545033 B1 KR 100545033B1
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
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Abstract
Description
Claims (38)
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- 드라이에칭의 에칭종점판정방법에 있어서,제 1 디지털 필터수단에 의하여 입력신호파형의 노이즈를 저감하는 단계와,다항식 평활화 미분법에 의하여 상기 신호파형의 미계수의 시계열 데이터를 구하는 단계와,앞의 단계에서 구한 상기 신호파형의 미계수의 시계열 데이터의 노이즈성분을 제 2 디지털 필터수단에 의하여 저감하여 평활화 미계수치를 구하는 단계와,상기 평활화 미계수치와 미리 설정된 값을 판별수단에 의하여 비교하여 에칭의 종점을 판정하는 단계를 포함하는 것을 특징으로 하는 에칭종점판정방법.
- 발광분광법을 사용한 드라이에칭의 에칭종점판정방법에 있어서,AD변환수단에 의하여 특정파장의 발광강도의 시계열 데이터를 얻는 단계와,제 1 디지털 필터수단에 의하여 상기 시계열 데이터를 평활화처리하여 평화화 시계열 데이터를 구하는 단계와,상기 평활화 시계열 데이터에 대하여 다항식 평활화 미분법에 의하여 상기 신호파형의 미계수의 시계열 데이터를 구하는 단계와,상기 미계수의 시계열 데이터를 제 2 디지털 필터링수단에 의하여 평활화처리하여 평활화 미계수치를 구하는 단계와,상기 평활화 미계수치와 미리 설정된 값을 판별수단에 의하여 비교하여 에칭의 종점을 판정하는 단계를 포함하는 것을 특징으로 하는 에칭종점판정방법.
- 제 27항에 있어서,상기 제 1 또는 제 2 디지털 필터수단으로서, 버터워스형 필터를 사용한 것을 특징으로 하는 에칭종점판정방법.
- 제 27항에 있어서,입력신호파형을 저게인동작으로 AD변환하여 신호전압의 대략의 절대치를 구하는 단계와, AD변환기의 차동증폭회로에의 입력전압을 DA변환기의 분해능을 고려하여 구하는 단계와, 앞의 단계에서 구한 AD변환기에의 입력전압(V0)을 DA변환기로부터 출력하는 단계와, 입력신호의 차동파형을 고게인동작으로 AD변환하고, 차동신호전압(V1)을 높은 정밀도로 구하는 단계와, 앞의 2개의 단계에서 구한 전압치를 합성하는 단계를 포함하는 것을 특징으로 하는 에칭종점판정방법.
- 제 30항에 있어서,상기 차동회로에의 옵셋치는 DA변환기의 분해능에서 1비트 잘라내어 설정하는 것을 특징으로 하는 에칭종점판정방법.
- 제 27항에 있어서,에칭처리의 이상을 검출하는 단계와, 상기 이상검출시에 상기 평활화 시계열 데이터와 상기 미계수의 시계열 데이터와 상기 평활화 미계수 시계열 데이터를 각각 수정하는 단계를 포함하는 것을 특징으로 하는 에칭종점판정방법.
- 제 32항에 있어서,생신호레벨의 변화량이 설정치를 넘은 경우, 미분치 평활화신호의 종점판정처리를 중단하고, 미분치 평활화신호의 표시처리를 중단하여, 표시화면에 이상을 표시하고, 생신호레벨의 변화량이 설정치 이하이면, 최초의 단계의 평활화신호 시계열을 과거로 2단계 내려가 현시점의 값을 대입하고, 또한 미분치신호와 미분치 평활화신호에 대하여, 미분처리의 차수 단계 과거로 내려가 현시점의 값을 대입하는 단계를 포함하는 것을 특징으로 하는 에칭종점판정방법.
- 발광강도의 미계수의 시계열 데이터에 의하여 에칭의 종점을 판정하는 에칭종점판정방법에 있어서,디지털 필터수단에 의하여 상기 시계열 데이터를 평활화처리하여 평활화 시계열 데이터를 구하는 단계와, 상기 평활화 시계열 데이터에 대하여 다항식 평활화 미분법에 의하여 미계수의 시계열 데이터를 구하는 단계와, 상기 미계수의 시계열 데이터의 변이를 표시수단에 표시하고, 이상 검출시에 상기 미계수의 시계열 데이터의 표시상에 이상을 나타내는 표시를 가하는 단계를 포함하는 것을 특징으로 하는 에칭종점판정방법.
- 발광분광법을 사용한 드라이에칭의 종점판정장치에 있어서,특정파장의 발광강도의 시계열 데이터를 얻는 AD변환수단과,상기 시계열 데이터를 평활화처리하는 제 1 디지털 필터링수단과,상기 평활화 시계열 데이터에 대하여 다항식 평활화 미분법에 의하여 미계수의 시계열 데이터를 구하는 연산수단과,산출된 상기 미계수의 시계열 데이터를 평활화처리하는 제 2 디지털 필터링수단과,상기 평활화 미계수치와 미리 설정된 값을 비교하여 에칭의 종점을 판정하는 판별수단을 구비한 것을 특징으로 하는 에칭종점판정장치.
- 제 35항에 있어서,에칭처리의 이상을 검출하는 수단과, 상기 이상검출시에 상기 평활화 시계열 데이터와 상기 미계수의 시계열 데이터와 상기 평활화 미계수 시계열 데이터를 각각 수정하는 제 1 디지털 필터링 보정수단과, 상기 미분연산 보정수단과, 제 2 디지털 필터링 보정수단을 구비한 것을 특징으로 하는 에칭종점판정장치.
- 발광강도의 미계수의 시계열 데이터에 의하여 에칭의 종점을 판정하는 에칭종점판정장치에 있어서,디지털 필터수단에 의하여 상기 시계열 데이터를 평활화처리하여 평활화 시계열 데이터를 구하는 수단과,상기 평활화 시계열 데이터에 대하여 다항식 평활화 미분법에 의하여 미계수의 시계열 데이터를 구하는 수단과, 상기 미계수의 시계열 데이터의 변이를 나타내는 표시수단과, 이상검출시에 상기 미계수의 시계열 데이터 표시상에 이상을 나타내는 표시수단을 구비한 것을 특징으로 하는 에칭종점판정장치.
- 제 35항에 있어서,플라즈마방전에 의한 에칭 중에 생기는 발광의 특정파장의 강도를 출력하는 광전자 증배관과, 상기 광전자 증배관으로부터 출력된 전류치를 전압치로 변환하는 IV변환기와, IV변환기로부터의 출력전압을 가공하기 위한 옵셋 및 게인과, IV변환기의 출력과 게인으로부터의 출력을 디지타이즈하는 AD변환기와, AD변환기로 디지타이즈된 데이터로부터 광전자 증배관의 출력을 목표출력으로 하기 위한 센스전압치를 구하는 센스조정수단과, 광전자 증배관의 암전류를 구하는 암전류 산출수단과, 구한 센스전압치가 오버플로우한 경우, 통상은 고정치로서 사용하는 게인을 변화시키는 게인 보정수단과, 구한 센스전압치, 옵셋치, 게인치를 아날로그변환하여 각각 설정하는 DA변환기를 구비한 것을 특징으로 하는 에칭종점판정장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP34136998 | 1998-12-01 | ||
JP10-341369 | 1998-12-01 | ||
JP10727199A JP3383236B2 (ja) | 1998-12-01 | 1999-04-14 | エッチング終点判定方法及びエッチング終点判定装置 |
JP11-107271 | 1999-04-14 |
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KR1020050054344A KR100587576B1 (ko) | 1998-12-01 | 2005-06-23 | 절연막의 에칭방법 |
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CN100459027C (zh) * | 2000-10-23 | 2009-02-04 | 应用材料有限公司 | 采用反射辐射监控衬底处理 |
US6903826B2 (en) | 2001-09-06 | 2005-06-07 | Hitachi, Ltd. | Method and apparatus for determining endpoint of semiconductor element fabricating process |
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1999
- 1999-04-14 JP JP10727199A patent/JP3383236B2/ja not_active Expired - Lifetime
- 1999-11-30 KR KR1019990053755A patent/KR100545033B1/ko active IP Right Grant
- 1999-12-01 US US09/452,174 patent/US6596551B1/en not_active Expired - Lifetime
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2002
- 2002-09-13 US US10/242,425 patent/US20030036282A1/en not_active Abandoned
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JP2000228397A (ja) | 2000-08-15 |
US20030036282A1 (en) | 2003-02-20 |
KR100587576B1 (ko) | 2006-06-08 |
JP3383236B2 (ja) | 2003-03-04 |
KR20000047790A (ko) | 2000-07-25 |
KR20050075317A (ko) | 2005-07-20 |
US6596551B1 (en) | 2003-07-22 |
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