KR100537473B1 - 자기발광형 표시장치 - Google Patents
자기발광형 표시장치 Download PDFInfo
- Publication number
- KR100537473B1 KR100537473B1 KR10-2001-0069470A KR20010069470A KR100537473B1 KR 100537473 B1 KR100537473 B1 KR 100537473B1 KR 20010069470 A KR20010069470 A KR 20010069470A KR 100537473 B1 KR100537473 B1 KR 100537473B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- display
- electrode
- light
- display pixel
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- 238000004020 luminiscence type Methods 0.000 title description 4
- 239000011159 matrix material Substances 0.000 claims abstract description 8
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- 239000000758 substrate Substances 0.000 description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 239000011521 glass Substances 0.000 description 7
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- 239000010409 thin film Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
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- 238000000059 patterning Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
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- 238000010030 laminating Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (5)
- 적어도 발광층을 포함하는 자기발광부를 가진 복수의 표시화소가 매트릭스 형상으로 배치됨에 있어, 상기 표시화소가 서로 전기적으로 절연된 복수의 제1전극과 이 제1전극에 대향하도록 배치되는 제2전극을 갖추고, 상기 발광부는 상기 제1 및 제2전극 사이에 보유지지되고, 또 상기 제1 및 제2전극 중 어느 한쪽이 광출사면 내에 배치되며, 상기 표시화소에서 하나의 표시화소로부터 인접한 다른 표시화소로 향하는 광이 상기 광출사면측으로 꺼내지도록 하는 광반사면을 상기 하나의 표시화소와 상기 다른 표시화소 사이에 설치한 것을 특징으로 하는 자기발광형 표시장치.
- 제1항에 있어서, 상기 제1전극을 각각 전기적으로 절연하는 격벽을 더 구비하고, 상기 제1 또는 제2전극 중, 상기 발광층을 매개로 상기 광출사면과 대향하도록 배치되는 쪽의 전극의 형성면이, 상기 각 표시화소의 단변(端邊)에 형성된 상기 격벽의 개구의 경사각에 의해, 광출사면에 대해 예각을 이루는 상기 광반사면을 형성하는 것을 특징으로 자기발광형 표시장치.
- 제2항에 있어서, 제2전극은, 복수의 표시화소에 걸쳐 연속하여 형성되는 것을 특징으로 하는 자기발광형 표시장치.
- 제2항에 있어서, 상기 광출사면과 대향 배치되는 측의 상기 전극의 형성면이, 개개의 상기 표시화소의 단변 전둘레에서, 광출사면에 대해, 예각을 이루도록 형성되는 것을 특징으로 하는 자기발광형 표시장치.
- 제2항에 있어서, 상기 복수의 제1전극은, 각각 격벽에 의해 전기적으로 절연되어 있으며, 상기 격벽을 덮는 전면에 상기 제2전극이 형성되고, 상기 표시화소 단변의 상기 격벽에 형성된 개구의 경사각에 의해, 상기 제2전극이 개개의 상기 표시화소의 단변에서, 광출사면에 대해, 예각을 이루도록 형성되는 것을 특징으로 하는 자기발광형 표시장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2000-00341843 | 2000-11-09 | ||
JP2000341843 | 2000-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020036735A KR20020036735A (ko) | 2002-05-16 |
KR100537473B1 true KR100537473B1 (ko) | 2005-12-19 |
Family
ID=18816505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0069470A KR100537473B1 (ko) | 2000-11-09 | 2001-11-08 | 자기발광형 표시장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6829023B2 (ko) |
KR (1) | KR100537473B1 (ko) |
CN (1) | CN1180304C (ko) |
TW (1) | TW535137B (ko) |
Families Citing this family (44)
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US8153184B2 (en) * | 2001-11-26 | 2012-04-10 | Samsung Mobile Display Co., Ltd. | Organic EL display device and method of manufacturing the same |
KR100656490B1 (ko) * | 2001-11-26 | 2006-12-12 | 삼성에스디아이 주식회사 | 풀칼라 유기전계 발광표시소자 및 그의 제조방법 |
US7579771B2 (en) | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US7786496B2 (en) * | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
JP2003317971A (ja) * | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
US7164155B2 (en) | 2002-05-15 | 2007-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7897979B2 (en) * | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
JP4216008B2 (ja) * | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、dvdプレーヤー、電子遊技機器、または携帯情報端末 |
JP4286495B2 (ja) * | 2002-06-28 | 2009-07-01 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
JP2004047215A (ja) * | 2002-07-10 | 2004-02-12 | Toshiba Corp | 有機el素子および有機el表示装置 |
JP2005534146A (ja) * | 2002-07-23 | 2005-11-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | エレクトロルミネセントディスプレイ、このようなディスプレイを有する電子デバイス及びエレクトロルミネセントディスプレイを製造する方法 |
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JP2004119304A (ja) * | 2002-09-27 | 2004-04-15 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス表示装置およびその製造方法 |
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JP2004170787A (ja) * | 2002-11-21 | 2004-06-17 | Toshiba Corp | 表示装置およびその駆動方法 |
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JP4373086B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP3791616B2 (ja) * | 2003-02-06 | 2006-06-28 | セイコーエプソン株式会社 | 配線基板、電気光学装置及びその製造方法並びに電子機器 |
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US7449724B2 (en) * | 2003-09-12 | 2008-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US7502392B2 (en) * | 2003-09-12 | 2009-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Laser oscillator |
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KR100611152B1 (ko) * | 2003-11-27 | 2006-08-09 | 삼성에스디아이 주식회사 | 평판표시장치 |
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CN104460127B (zh) * | 2013-09-25 | 2017-12-12 | 群创光电股份有限公司 | 自发光显示元件 |
KR102181978B1 (ko) * | 2014-08-22 | 2020-11-24 | 삼성디스플레이 주식회사 | 발광 표시 장치 및 그 제조 방법 |
KR102016565B1 (ko) * | 2017-11-30 | 2019-08-30 | 엘지디스플레이 주식회사 | 전계발광표시장치 |
KR102500676B1 (ko) * | 2018-02-02 | 2023-02-16 | 삼성디스플레이 주식회사 | 발광 표시 장치 |
KR20200040046A (ko) * | 2018-10-08 | 2020-04-17 | 엘지디스플레이 주식회사 | 표시장치 |
CN110164916B (zh) * | 2018-12-05 | 2021-02-02 | 京东方科技集团股份有限公司 | 显示面板、显示设备及制造显示面板的方法 |
JP7360272B2 (ja) * | 2019-08-19 | 2023-10-12 | 株式会社ジャパンディスプレイ | 表示装置 |
CN114220930B (zh) * | 2021-10-29 | 2022-10-11 | 长沙惠科光电有限公司 | 显示面板及其制备方法 |
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---|---|---|---|---|
KR20000033167A (ko) * | 1998-11-20 | 2000-06-15 | 윤종용 | 반사형 액정 디스플레이 장치 |
KR100322074B1 (ko) * | 1999-03-31 | 2002-02-04 | 김순택 | 플라즈마 디스플레이 패널 |
Family Cites Families (3)
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JP3881092B2 (ja) * | 1997-07-10 | 2007-02-14 | シチズン時計株式会社 | 液晶表示パネル |
JP3188411B2 (ja) * | 1996-10-18 | 2001-07-16 | キヤノン株式会社 | 反射型液晶装置用画素電極基板、該画素電極基板を用いた液晶装置及び該液晶装置を用いた表示装置 |
JP3530362B2 (ja) * | 1996-12-19 | 2004-05-24 | 三洋電機株式会社 | 自発光型画像表示装置 |
-
2001
- 2001-10-31 TW TW090127063A patent/TW535137B/zh not_active IP Right Cessation
- 2001-11-08 KR KR10-2001-0069470A patent/KR100537473B1/ko active IP Right Grant
- 2001-11-08 US US09/986,463 patent/US6829023B2/en not_active Expired - Lifetime
- 2001-11-09 CN CNB011378824A patent/CN1180304C/zh not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000033167A (ko) * | 1998-11-20 | 2000-06-15 | 윤종용 | 반사형 액정 디스플레이 장치 |
KR100322074B1 (ko) * | 1999-03-31 | 2002-02-04 | 김순택 | 플라즈마 디스플레이 패널 |
Also Published As
Publication number | Publication date |
---|---|
US6829023B2 (en) | 2004-12-07 |
CN1180304C (zh) | 2004-12-15 |
TW535137B (en) | 2003-06-01 |
KR20020036735A (ko) | 2002-05-16 |
US20020063515A1 (en) | 2002-05-30 |
CN1366207A (zh) | 2002-08-28 |
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