KR100530914B1 - 포지티브포토레지스트조성물 - Google Patents

포지티브포토레지스트조성물 Download PDF

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Publication number
KR100530914B1
KR100530914B1 KR1019980003611A KR19980003611A KR100530914B1 KR 100530914 B1 KR100530914 B1 KR 100530914B1 KR 1019980003611 A KR1019980003611 A KR 1019980003611A KR 19980003611 A KR19980003611 A KR 19980003611A KR 100530914 B1 KR100530914 B1 KR 100530914B1
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KR
South Korea
Prior art keywords
group
alkali
photoresist composition
positive photoresist
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980003611A
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English (en)
Korean (ko)
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KR19980071173A (ko
Inventor
시로오 탄
토시아키 아오아이
토오루 후지모리
Original Assignee
후지 샤신 필름 가부시기가이샤
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Publication of KR19980071173A publication Critical patent/KR19980071173A/ko
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Publication of KR100530914B1 publication Critical patent/KR100530914B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
KR1019980003611A 1997-02-07 1998-02-07 포지티브포토레지스트조성물 Expired - Fee Related KR100530914B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02536997A JP3802179B2 (ja) 1997-02-07 1997-02-07 ポジ型フォトレジスト組成物
JP97-25369 1997-02-07

Publications (2)

Publication Number Publication Date
KR19980071173A KR19980071173A (ko) 1998-10-26
KR100530914B1 true KR100530914B1 (ko) 2006-08-10

Family

ID=12163926

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980003611A Expired - Fee Related KR100530914B1 (ko) 1997-02-07 1998-02-07 포지티브포토레지스트조성물

Country Status (3)

Country Link
US (1) US6004721A (enExample)
JP (1) JP3802179B2 (enExample)
KR (1) KR100530914B1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100533402B1 (ko) * 1998-04-14 2005-12-02 후지 샤신 필름 가부시기가이샤 포지티브 감광성 조성물
JP3974718B2 (ja) * 1998-11-09 2007-09-12 Ａｚエレクトロニックマテリアルズ株式会社 感放射線性樹脂組成物
US6251569B1 (en) * 1999-08-13 2001-06-26 International Business Machines Corporation Forming a pattern of a negative photoresist
US6727036B2 (en) * 1999-12-27 2004-04-27 Fuji Photo Film Co., Ltd. Positive-working radiation-sensitive composition
US6534241B2 (en) * 2000-01-12 2003-03-18 Howard A. Fromson Method of actinically imaging a semiconductor
TW453612U (en) * 2000-04-26 2001-09-01 Ritdisplay Corp Surface processing device of display panel
JP4562240B2 (ja) * 2000-05-10 2010-10-13 富士フイルム株式会社 ポジ型感放射線性組成物及びそれを用いたパターン形成方法
KR100583095B1 (ko) * 2000-06-30 2006-05-24 주식회사 하이닉스반도체 광산 발생제와 함께 광 라디칼 발생제(ｐｒｇ)를 포함하는포토레지스트 조성물
TW594383B (en) * 2001-02-21 2004-06-21 Fuji Photo Film Co Ltd Positive resist composition for electron beam
JP4595275B2 (ja) * 2001-09-28 2010-12-08 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US7303852B2 (en) * 2001-12-27 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method
US7510822B2 (en) * 2002-04-10 2009-03-31 Fujifilm Corporation Stimulation sensitive composition and compound
JP4115322B2 (ja) 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
US7541131B2 (en) * 2005-02-18 2009-06-02 Fujifilm Corporation Resist composition, compound for use in the resist composition and pattern forming method using the resist composition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06282073A (ja) * 1993-03-26 1994-10-07 Fuji Photo Film Co Ltd ポジ型感光性組成物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3198915B2 (ja) * 1996-04-02 2001-08-13 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP3808140B2 (ja) * 1996-09-10 2006-08-09 Ａｚエレクトロニックマテリアルズ株式会社 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06282073A (ja) * 1993-03-26 1994-10-07 Fuji Photo Film Co Ltd ポジ型感光性組成物

Also Published As

Publication number Publication date
JP3802179B2 (ja) 2006-07-26
KR19980071173A (ko) 1998-10-26
US6004721A (en) 1999-12-21
JPH10221854A (ja) 1998-08-21

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