KR100514238B1 - 포토마스크의 제조방법 - Google Patents

포토마스크의 제조방법 Download PDF

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Publication number
KR100514238B1
KR100514238B1 KR10-2002-0038566A KR20020038566A KR100514238B1 KR 100514238 B1 KR100514238 B1 KR 100514238B1 KR 20020038566 A KR20020038566 A KR 20020038566A KR 100514238 B1 KR100514238 B1 KR 100514238B1
Authority
KR
South Korea
Prior art keywords
transmittance
film
photomask
halftone
phase shift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0038566A
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English (en)
Korean (ko)
Other versions
KR20030038330A (ko
Inventor
호소노쿠니히로
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20030038330A publication Critical patent/KR20030038330A/ko
Application granted granted Critical
Publication of KR100514238B1 publication Critical patent/KR100514238B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR10-2002-0038566A 2001-11-01 2002-07-04 포토마스크의 제조방법 Expired - Fee Related KR100514238B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00336828 2001-11-01
JP2001336828A JP2003140314A (ja) 2001-11-01 2001-11-01 フォトマスクブランク及びその製造方法並びにこのフォトマスクブランクを用いたフォトマスクの製造方法

Publications (2)

Publication Number Publication Date
KR20030038330A KR20030038330A (ko) 2003-05-16
KR100514238B1 true KR100514238B1 (ko) 2005-09-13

Family

ID=19151587

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0038566A Expired - Fee Related KR100514238B1 (ko) 2001-11-01 2002-07-04 포토마스크의 제조방법

Country Status (4)

Country Link
US (1) US6841314B2 (enExample)
JP (1) JP2003140314A (enExample)
KR (1) KR100514238B1 (enExample)
TW (1) TW528927B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060251971A1 (en) * 2005-05-03 2006-11-09 Richard Schenker Photo-Mask with variable transmission by ion implantation
US20090137106A1 (en) * 2007-11-27 2009-05-28 Nunan Peter D Using ion implantation to control trench depth and alter optical properties of a substrate
JP5573306B2 (ja) * 2010-03-31 2014-08-20 凸版印刷株式会社 フォトマスクブランクの製造方法
KR100986370B1 (ko) * 2010-04-09 2010-10-08 백광플라텍 주식회사 조립식 물탱크용 부식방지형 스테이볼트 조립체
JP5672887B2 (ja) * 2010-09-16 2015-02-18 凸版印刷株式会社 フォトマスクブランクの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0862822A (ja) * 1994-08-26 1996-03-08 Nec Corp 半透明位相シフトマスクの製造方法
KR970007484A (ko) * 1995-07-31 1997-02-21 문정환 위상반전마스크 제조방법
JPH09211838A (ja) * 1996-02-05 1997-08-15 Toshiba Corp 位相シフトマスク及びその製造方法、並びに当該位相シフトマスクを用いた光リソグラフィ方法
JPH1083063A (ja) * 1996-09-06 1998-03-31 Nec Corp ハーフトーン型位相シフトマスク及びその作成方法
KR19980029376A (ko) * 1996-10-25 1998-07-25 김광호 위상반전마스크 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03144452A (ja) 1989-10-30 1991-06-19 Oki Electric Ind Co Ltd 位相差マスク

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0862822A (ja) * 1994-08-26 1996-03-08 Nec Corp 半透明位相シフトマスクの製造方法
KR970007484A (ko) * 1995-07-31 1997-02-21 문정환 위상반전마스크 제조방법
JPH09211838A (ja) * 1996-02-05 1997-08-15 Toshiba Corp 位相シフトマスク及びその製造方法、並びに当該位相シフトマスクを用いた光リソグラフィ方法
JPH1083063A (ja) * 1996-09-06 1998-03-31 Nec Corp ハーフトーン型位相シフトマスク及びその作成方法
KR19980029376A (ko) * 1996-10-25 1998-07-25 김광호 위상반전마스크 제조방법

Also Published As

Publication number Publication date
TW528927B (en) 2003-04-21
KR20030038330A (ko) 2003-05-16
JP2003140314A (ja) 2003-05-14
US6841314B2 (en) 2005-01-11
US20030082462A1 (en) 2003-05-01

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