JP2003140314A - フォトマスクブランク及びその製造方法並びにこのフォトマスクブランクを用いたフォトマスクの製造方法 - Google Patents

フォトマスクブランク及びその製造方法並びにこのフォトマスクブランクを用いたフォトマスクの製造方法

Info

Publication number
JP2003140314A
JP2003140314A JP2001336828A JP2001336828A JP2003140314A JP 2003140314 A JP2003140314 A JP 2003140314A JP 2001336828 A JP2001336828 A JP 2001336828A JP 2001336828 A JP2001336828 A JP 2001336828A JP 2003140314 A JP2003140314 A JP 2003140314A
Authority
JP
Japan
Prior art keywords
substrate
halftone film
photomask blank
photomask
transmittance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001336828A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003140314A5 (enExample
Inventor
Kunihiro Hosono
邦博 細野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001336828A priority Critical patent/JP2003140314A/ja
Priority to US10/162,082 priority patent/US6841314B2/en
Priority to TW091112567A priority patent/TW528927B/zh
Priority to KR10-2002-0038566A priority patent/KR100514238B1/ko
Publication of JP2003140314A publication Critical patent/JP2003140314A/ja
Publication of JP2003140314A5 publication Critical patent/JP2003140314A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2001336828A 2001-11-01 2001-11-01 フォトマスクブランク及びその製造方法並びにこのフォトマスクブランクを用いたフォトマスクの製造方法 Pending JP2003140314A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001336828A JP2003140314A (ja) 2001-11-01 2001-11-01 フォトマスクブランク及びその製造方法並びにこのフォトマスクブランクを用いたフォトマスクの製造方法
US10/162,082 US6841314B2 (en) 2001-11-01 2002-06-05 Method of manufacturing a photomask
TW091112567A TW528927B (en) 2001-11-01 2002-06-10 Method of manufacturing a photomask
KR10-2002-0038566A KR100514238B1 (ko) 2001-11-01 2002-07-04 포토마스크의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001336828A JP2003140314A (ja) 2001-11-01 2001-11-01 フォトマスクブランク及びその製造方法並びにこのフォトマスクブランクを用いたフォトマスクの製造方法

Publications (2)

Publication Number Publication Date
JP2003140314A true JP2003140314A (ja) 2003-05-14
JP2003140314A5 JP2003140314A5 (enExample) 2005-07-07

Family

ID=19151587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001336828A Pending JP2003140314A (ja) 2001-11-01 2001-11-01 フォトマスクブランク及びその製造方法並びにこのフォトマスクブランクを用いたフォトマスクの製造方法

Country Status (4)

Country Link
US (1) US6841314B2 (enExample)
JP (1) JP2003140314A (enExample)
KR (1) KR100514238B1 (enExample)
TW (1) TW528927B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011215404A (ja) * 2010-03-31 2011-10-27 Toppan Printing Co Ltd フォトマスクブランクとその製造方法
JP2012063585A (ja) * 2010-09-16 2012-03-29 Toppan Printing Co Ltd フォトマスクブランク及びフォトマスク

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060251971A1 (en) * 2005-05-03 2006-11-09 Richard Schenker Photo-Mask with variable transmission by ion implantation
US20090137106A1 (en) * 2007-11-27 2009-05-28 Nunan Peter D Using ion implantation to control trench depth and alter optical properties of a substrate
KR100986370B1 (ko) * 2010-04-09 2010-10-08 백광플라텍 주식회사 조립식 물탱크용 부식방지형 스테이볼트 조립체

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03144452A (ja) 1989-10-30 1991-06-19 Oki Electric Ind Co Ltd 位相差マスク
JPH0862822A (ja) * 1994-08-26 1996-03-08 Nec Corp 半透明位相シフトマスクの製造方法
KR0167249B1 (ko) * 1995-07-31 1999-01-15 문정환 위상반전마스크 제조방법
JPH09211838A (ja) * 1996-02-05 1997-08-15 Toshiba Corp 位相シフトマスク及びその製造方法、並びに当該位相シフトマスクを用いた光リソグラフィ方法
JPH1083063A (ja) * 1996-09-06 1998-03-31 Nec Corp ハーフトーン型位相シフトマスク及びその作成方法
KR19980029376A (ko) * 1996-10-25 1998-07-25 김광호 위상반전마스크 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011215404A (ja) * 2010-03-31 2011-10-27 Toppan Printing Co Ltd フォトマスクブランクとその製造方法
JP2012063585A (ja) * 2010-09-16 2012-03-29 Toppan Printing Co Ltd フォトマスクブランク及びフォトマスク

Also Published As

Publication number Publication date
KR100514238B1 (ko) 2005-09-13
TW528927B (en) 2003-04-21
KR20030038330A (ko) 2003-05-16
US6841314B2 (en) 2005-01-11
US20030082462A1 (en) 2003-05-01

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