TW528927B - Method of manufacturing a photomask - Google Patents
Method of manufacturing a photomask Download PDFInfo
- Publication number
- TW528927B TW528927B TW091112567A TW91112567A TW528927B TW 528927 B TW528927 B TW 528927B TW 091112567 A TW091112567 A TW 091112567A TW 91112567 A TW91112567 A TW 91112567A TW 528927 B TW528927 B TW 528927B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- mask
- phase difference
- transmittance
- wavelength
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000012535 impurity Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000005468 ion implantation Methods 0.000 claims abstract description 36
- 150000002500 ions Chemical class 0.000 claims description 40
- 230000005540 biological transmission Effects 0.000 claims description 18
- 238000002513 implantation Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 3
- 239000011149 active material Substances 0.000 claims description 2
- 230000036211 photosensitivity Effects 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 2
- 239000010453 quartz Substances 0.000 abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 26
- 230000010363 phase shift Effects 0.000 abstract description 4
- 238000002834 transmittance Methods 0.000 description 87
- 238000007689 inspection Methods 0.000 description 80
- 230000007547 defect Effects 0.000 description 38
- 239000000463 material Substances 0.000 description 27
- 238000010586 diagram Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000001459 lithography Methods 0.000 description 8
- 239000002585 base Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- -1 oxynitrides Chemical class 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical class [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001336828A JP2003140314A (ja) | 2001-11-01 | 2001-11-01 | フォトマスクブランク及びその製造方法並びにこのフォトマスクブランクを用いたフォトマスクの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW528927B true TW528927B (en) | 2003-04-21 |
Family
ID=19151587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091112567A TW528927B (en) | 2001-11-01 | 2002-06-10 | Method of manufacturing a photomask |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6841314B2 (enExample) |
| JP (1) | JP2003140314A (enExample) |
| KR (1) | KR100514238B1 (enExample) |
| TW (1) | TW528927B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060251971A1 (en) * | 2005-05-03 | 2006-11-09 | Richard Schenker | Photo-Mask with variable transmission by ion implantation |
| US20090137106A1 (en) * | 2007-11-27 | 2009-05-28 | Nunan Peter D | Using ion implantation to control trench depth and alter optical properties of a substrate |
| JP5573306B2 (ja) * | 2010-03-31 | 2014-08-20 | 凸版印刷株式会社 | フォトマスクブランクの製造方法 |
| KR100986370B1 (ko) * | 2010-04-09 | 2010-10-08 | 백광플라텍 주식회사 | 조립식 물탱크용 부식방지형 스테이볼트 조립체 |
| JP5672887B2 (ja) * | 2010-09-16 | 2015-02-18 | 凸版印刷株式会社 | フォトマスクブランクの製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03144452A (ja) | 1989-10-30 | 1991-06-19 | Oki Electric Ind Co Ltd | 位相差マスク |
| JPH0862822A (ja) * | 1994-08-26 | 1996-03-08 | Nec Corp | 半透明位相シフトマスクの製造方法 |
| KR0167249B1 (ko) * | 1995-07-31 | 1999-01-15 | 문정환 | 위상반전마스크 제조방법 |
| JPH09211838A (ja) * | 1996-02-05 | 1997-08-15 | Toshiba Corp | 位相シフトマスク及びその製造方法、並びに当該位相シフトマスクを用いた光リソグラフィ方法 |
| JPH1083063A (ja) * | 1996-09-06 | 1998-03-31 | Nec Corp | ハーフトーン型位相シフトマスク及びその作成方法 |
| KR19980029376A (ko) * | 1996-10-25 | 1998-07-25 | 김광호 | 위상반전마스크 제조방법 |
-
2001
- 2001-11-01 JP JP2001336828A patent/JP2003140314A/ja active Pending
-
2002
- 2002-06-05 US US10/162,082 patent/US6841314B2/en not_active Expired - Fee Related
- 2002-06-10 TW TW091112567A patent/TW528927B/zh not_active IP Right Cessation
- 2002-07-04 KR KR10-2002-0038566A patent/KR100514238B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100514238B1 (ko) | 2005-09-13 |
| KR20030038330A (ko) | 2003-05-16 |
| JP2003140314A (ja) | 2003-05-14 |
| US6841314B2 (en) | 2005-01-11 |
| US20030082462A1 (en) | 2003-05-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |