KR100504135B1 - 적외선 레이저 프로브를 이용하여 집적회로 내의 전압을직접 측정하기 위한 방법 및 장치 - Google Patents

적외선 레이저 프로브를 이용하여 집적회로 내의 전압을직접 측정하기 위한 방법 및 장치 Download PDF

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Publication number
KR100504135B1
KR100504135B1 KR10-2001-7001619A KR20017001619A KR100504135B1 KR 100504135 B1 KR100504135 B1 KR 100504135B1 KR 20017001619 A KR20017001619 A KR 20017001619A KR 100504135 B1 KR100504135 B1 KR 100504135B1
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South Korea
Prior art keywords
semiconductor
laser beam
integrated circuit
active region
detecting
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Korean (ko)
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KR20010072315A (ko
Inventor
패니시아마리오아이.
엠. 라오발루리알.
이웨이문
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인텔 코오퍼레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Measuring Leads Or Probes (AREA)
KR10-2001-7001619A 1998-08-07 1999-07-26 적외선 레이저 프로브를 이용하여 집적회로 내의 전압을직접 측정하기 위한 방법 및 장치 Expired - Fee Related KR100504135B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/130,741 US6072179A (en) 1998-08-07 1998-08-07 Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit
US09/130,741 1998-08-07

Publications (2)

Publication Number Publication Date
KR20010072315A KR20010072315A (ko) 2001-07-31
KR100504135B1 true KR100504135B1 (ko) 2005-07-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-7001619A Expired - Fee Related KR100504135B1 (ko) 1998-08-07 1999-07-26 적외선 레이저 프로브를 이용하여 집적회로 내의 전압을직접 측정하기 위한 방법 및 장치

Country Status (9)

Country Link
US (1) US6072179A (enExample)
EP (1) EP1102999B1 (enExample)
JP (1) JP4846902B2 (enExample)
KR (1) KR100504135B1 (enExample)
AU (1) AU5216699A (enExample)
DE (1) DE69927387T2 (enExample)
IL (1) IL141195A (enExample)
TW (1) TW444125B (enExample)
WO (1) WO2000008478A1 (enExample)

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US6587258B1 (en) * 2000-03-24 2003-07-01 Southwest Sciences Incorporated Electro-optic electric field probe
US6636056B1 (en) * 2000-10-20 2003-10-21 Intel Corporation Apparatus and method for testing integrated circuits
US7019511B1 (en) * 2001-01-05 2006-03-28 Advanced Micro Devices, Inc. Optical analysis of integrated circuits
US6714035B2 (en) 2002-06-28 2004-03-30 Hewlett-Packard Development Company, L.P. System and method for measuring fault coverage in an integrated circuit
US7291508B2 (en) * 2003-03-31 2007-11-06 Intel Corporation Laser probe points
FR2859020B1 (fr) * 2003-08-22 2005-11-04 Centre Nat Rech Scient Dispositif et procede de detection et de mesure non invasives des proprietes d'un milieu
FR2859024B1 (fr) * 2003-08-22 2005-12-09 Centre Nat Rech Scient Dispositif et procede de detection et de mesure non invasives d'un champ electrique
US7190458B2 (en) * 2003-12-09 2007-03-13 Applied Materials, Inc. Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity
WO2005057194A1 (en) * 2003-12-09 2005-06-23 Applied Materials, Inc. Differential evaluation of adjacent regions for change in reflectivity
US7136163B2 (en) * 2003-12-09 2006-11-14 Applied Materials, Inc. Differential evaluation of adjacent regions for change in reflectivity
US7505150B2 (en) * 2005-05-13 2009-03-17 Laytec Gmbh Device and method for the measurement of the curvature of a surface
US7450245B2 (en) 2005-06-29 2008-11-11 Dcg Systems, Inc. Method and apparatus for measuring high-bandwidth electrical signals using modulation in an optical probing system
US7659981B2 (en) * 2005-08-26 2010-02-09 Dcg Systems, Inc. Apparatus and method for probing integrated circuits using polarization difference probing
US7616312B2 (en) 2005-06-29 2009-11-10 Dcg Systems, Inc. Apparatus and method for probing integrated circuits using laser illumination
US7733100B2 (en) 2005-08-26 2010-06-08 Dcg Systems, Inc. System and method for modulation mapping
JP4711801B2 (ja) * 2005-10-28 2011-06-29 ルネサスエレクトロニクス株式会社 回路設計システム及び回路設計プログラム
SG10201506637YA (en) 2009-05-01 2015-10-29 Dcg Systems Inc Systems and method for laser voltage imaging state mapping
US9651610B2 (en) * 2013-06-29 2017-05-16 Intel Corporation Visible laser probing for circuit debug and defect analysis
TWI487924B (zh) * 2013-11-19 2015-06-11 Machvision Inc 印刷電路板的檢測方法及其裝置
US10573605B2 (en) * 2016-12-13 2020-02-25 University Of Florida Research Foundation, Incorporated Layout-driven method to assess vulnerability of ICs to microprobing attacks
CN109239023B (zh) * 2018-08-28 2020-11-17 西安工业大学 一种基于自由载流子吸收成像的半导体材料特性测量方法
KR20190091188A (ko) 2018-11-22 2019-08-05 주식회사 머니브레인 포먼트 주파수 신호들의 변조에 의해, 임의 삭제가 불가능한 합성음 표시를 포함하는 tts 음성 신호를 생성하는 방법 및 컴퓨터 판독가능 기록매체
US10768225B1 (en) 2019-03-08 2020-09-08 Advanced Micro Devices, Inc. Probe placement for laser probing system
US11143700B2 (en) 2019-09-25 2021-10-12 Advanced Micro Devices, Inc. Analysis of electro-optic waveforms
US11125815B2 (en) 2019-09-27 2021-09-21 Advanced Micro Devices, Inc. Electro-optic waveform analysis process
JP7648144B2 (ja) 2021-05-24 2025-03-18 国立大学法人福井大学 評価方法、評価システム、及び半導体素子の製造方法
CN119334906B (zh) * 2024-10-21 2025-11-28 北京工业大学 一种用于气体或烟雾探测的激光器及其制备方法和应用

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JP2906633B2 (ja) * 1990-10-12 1999-06-21 横河電機株式会社 光サンプリング装置
JP2906285B2 (ja) * 1990-10-12 1999-06-14 横河電機株式会社 光サンプリング装置
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JP2962234B2 (ja) * 1996-08-07 1999-10-12 日本電気株式会社 半導体デバイスの寄生ＭＩＭ構造箇所解析法及びＳｉ半導体デバイスの寄生ＭＩＭ構造箇所解析法
US5872360A (en) * 1996-12-12 1999-02-16 Intel Corporation Method and apparatus using an infrared laser based optical probe for measuring electric fields directly from active regions in an integrated circuit

Also Published As

Publication number Publication date
DE69927387D1 (de) 2006-02-02
KR20010072315A (ko) 2001-07-31
JP2002522770A (ja) 2002-07-23
EP1102999B1 (en) 2005-09-21
EP1102999A1 (en) 2001-05-30
AU5216699A (en) 2000-02-28
WO2000008478A1 (en) 2000-02-17
US6072179A (en) 2000-06-06
IL141195A0 (en) 2002-02-10
HK1033978A1 (en) 2001-10-05
TW444125B (en) 2001-07-01
JP4846902B2 (ja) 2011-12-28
EP1102999A4 (en) 2002-10-09
IL141195A (en) 2004-12-15
DE69927387T2 (de) 2006-07-06

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