TW444125B - Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit - Google Patents
Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit Download PDFInfo
- Publication number
- TW444125B TW444125B TW088111791A TW88111791A TW444125B TW 444125 B TW444125 B TW 444125B TW 088111791 A TW088111791 A TW 088111791A TW 88111791 A TW88111791 A TW 88111791A TW 444125 B TW444125 B TW 444125B
- Authority
- TW
- Taiwan
- Prior art keywords
- patent application
- integrated circuit
- item
- scope
- laser beam
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 56
- 230000003287 optical effect Effects 0.000 title claims abstract description 12
- 239000000523 sample Substances 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 238000001514 detection method Methods 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000010521 absorption reaction Methods 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 230000008859 change Effects 0.000 claims description 17
- 230000010287 polarization Effects 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
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- 238000005516 engineering process Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 12
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- 239000012535 impurity Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 6
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- 239000013078 crystal Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
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- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000005697 Pockels effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
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- JLKIGFTWXXRPMT-UHFFFAOYSA-N sulphamethoxazole Chemical compound O1C(C)=CC(NS(=O)(=O)C=2C=CC(N)=CC=2)=N1 JLKIGFTWXXRPMT-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measurement Of Current Or Voltage (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Measuring Leads Or Probes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/130,741 US6072179A (en) | 1998-08-07 | 1998-08-07 | Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW444125B true TW444125B (en) | 2001-07-01 |
Family
ID=22446102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088111791A TW444125B (en) | 1998-08-07 | 1999-07-12 | Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6072179A (enExample) |
| EP (1) | EP1102999B1 (enExample) |
| JP (1) | JP4846902B2 (enExample) |
| KR (1) | KR100504135B1 (enExample) |
| AU (1) | AU5216699A (enExample) |
| DE (1) | DE69927387T2 (enExample) |
| IL (1) | IL141195A (enExample) |
| TW (1) | TW444125B (enExample) |
| WO (1) | WO2000008478A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6215577B1 (en) * | 1999-10-25 | 2001-04-10 | Intel Corporation | Method and apparatus for optically modulating an optical beam with a multi-pass wave-guided optical modulator |
| FR2801680B3 (fr) * | 1999-11-26 | 2002-02-15 | Christophe Vaucher | Methode de test electrique de la conformite de l'interconnexion de conducteurs electriques disposes sur un substrat, sans contact et sans outillage |
| US6587258B1 (en) * | 2000-03-24 | 2003-07-01 | Southwest Sciences Incorporated | Electro-optic electric field probe |
| US6636056B1 (en) * | 2000-10-20 | 2003-10-21 | Intel Corporation | Apparatus and method for testing integrated circuits |
| US7019511B1 (en) * | 2001-01-05 | 2006-03-28 | Advanced Micro Devices, Inc. | Optical analysis of integrated circuits |
| US6714035B2 (en) | 2002-06-28 | 2004-03-30 | Hewlett-Packard Development Company, L.P. | System and method for measuring fault coverage in an integrated circuit |
| US7291508B2 (en) * | 2003-03-31 | 2007-11-06 | Intel Corporation | Laser probe points |
| FR2859020B1 (fr) * | 2003-08-22 | 2005-11-04 | Centre Nat Rech Scient | Dispositif et procede de detection et de mesure non invasives des proprietes d'un milieu |
| FR2859024B1 (fr) * | 2003-08-22 | 2005-12-09 | Centre Nat Rech Scient | Dispositif et procede de detection et de mesure non invasives d'un champ electrique |
| WO2005057194A1 (en) * | 2003-12-09 | 2005-06-23 | Applied Materials, Inc. | Differential evaluation of adjacent regions for change in reflectivity |
| US7136163B2 (en) * | 2003-12-09 | 2006-11-14 | Applied Materials, Inc. | Differential evaluation of adjacent regions for change in reflectivity |
| US7190458B2 (en) * | 2003-12-09 | 2007-03-13 | Applied Materials, Inc. | Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity |
| US7505150B2 (en) * | 2005-05-13 | 2009-03-17 | Laytec Gmbh | Device and method for the measurement of the curvature of a surface |
| US7659981B2 (en) * | 2005-08-26 | 2010-02-09 | Dcg Systems, Inc. | Apparatus and method for probing integrated circuits using polarization difference probing |
| US7450245B2 (en) | 2005-06-29 | 2008-11-11 | Dcg Systems, Inc. | Method and apparatus for measuring high-bandwidth electrical signals using modulation in an optical probing system |
| US7616312B2 (en) | 2005-06-29 | 2009-11-10 | Dcg Systems, Inc. | Apparatus and method for probing integrated circuits using laser illumination |
| US7733100B2 (en) * | 2005-08-26 | 2010-06-08 | Dcg Systems, Inc. | System and method for modulation mapping |
| JP4711801B2 (ja) * | 2005-10-28 | 2011-06-29 | ルネサスエレクトロニクス株式会社 | 回路設計システム及び回路設計プログラム |
| US8754633B2 (en) * | 2009-05-01 | 2014-06-17 | Dcg Systems, Inc. | Systems and method for laser voltage imaging state mapping |
| US9651610B2 (en) * | 2013-06-29 | 2017-05-16 | Intel Corporation | Visible laser probing for circuit debug and defect analysis |
| TWI487924B (zh) * | 2013-11-19 | 2015-06-11 | Machvision Inc | 印刷電路板的檢測方法及其裝置 |
| US10573605B2 (en) * | 2016-12-13 | 2020-02-25 | University Of Florida Research Foundation, Incorporated | Layout-driven method to assess vulnerability of ICs to microprobing attacks |
| CN109239023B (zh) * | 2018-08-28 | 2020-11-17 | 西安工业大学 | 一种基于自由载流子吸收成像的半导体材料特性测量方法 |
| KR20190091188A (ko) | 2018-11-22 | 2019-08-05 | 주식회사 머니브레인 | 포먼트 주파수 신호들의 변조에 의해, 임의 삭제가 불가능한 합성음 표시를 포함하는 tts 음성 신호를 생성하는 방법 및 컴퓨터 판독가능 기록매체 |
| US10768225B1 (en) | 2019-03-08 | 2020-09-08 | Advanced Micro Devices, Inc. | Probe placement for laser probing system |
| US11143700B2 (en) | 2019-09-25 | 2021-10-12 | Advanced Micro Devices, Inc. | Analysis of electro-optic waveforms |
| US11125815B2 (en) | 2019-09-27 | 2021-09-21 | Advanced Micro Devices, Inc. | Electro-optic waveform analysis process |
| JP7648144B2 (ja) | 2021-05-24 | 2025-03-18 | 国立大学法人福井大学 | 評価方法、評価システム、及び半導体素子の製造方法 |
| CN119334906B (zh) * | 2024-10-21 | 2025-11-28 | 北京工业大学 | 一种用于气体或烟雾探测的激光器及其制备方法和应用 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3976873A (en) * | 1975-05-08 | 1976-08-24 | The United States Of America As Represented By The Secretary Of The Navy | Tunable electroabsorptive detector |
| JPS5269285A (en) * | 1975-12-05 | 1977-06-08 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| US4273421A (en) * | 1977-01-17 | 1981-06-16 | Motorola, Inc. | Semiconductor lifetime measurement method |
| US4480916A (en) * | 1982-07-06 | 1984-11-06 | The United States Of America As Represented By The Secretary Of The Navy | Phase-modulated polarizing interferometer |
| US4503541A (en) * | 1982-11-10 | 1985-03-05 | The United States Of America As Represented By The Secretary Of The Navy | Controlled-linewidth laser source |
| US4583226A (en) * | 1983-07-28 | 1986-04-15 | At&T Bell Laboratories | Coupled cavity injection laser |
| US4661770A (en) * | 1984-12-18 | 1987-04-28 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and apparatus for measuring minority carrier lifetime in a direct band-gap semiconductor |
| US4758092A (en) * | 1986-03-04 | 1988-07-19 | Stanford University | Method and means for optical detection of charge density modulation in a semiconductor |
| JPH0627787B2 (ja) * | 1987-03-19 | 1994-04-13 | ソニー・テクトロニクス株式会社 | 光プローブ |
| JPH0317563A (ja) * | 1989-06-14 | 1991-01-25 | Fujitsu Ltd | 半導体装置の信号測定方法 |
| US5097201A (en) * | 1990-02-15 | 1992-03-17 | Photon Dynamics, Inc. | Voltage imaging system using electro-optics |
| JPH04121673A (ja) * | 1990-09-12 | 1992-04-22 | Yokogawa Electric Corp | 光サンプリング装置 |
| US5164664A (en) * | 1990-10-09 | 1992-11-17 | Siemens Aktiengesellschaft | Method for the optical measurement of electrical potentials |
| JP2906285B2 (ja) * | 1990-10-12 | 1999-06-14 | 横河電機株式会社 | 光サンプリング装置 |
| JP2906633B2 (ja) * | 1990-10-12 | 1999-06-21 | 横河電機株式会社 | 光サンプリング装置 |
| JPH0513522A (ja) * | 1991-07-04 | 1993-01-22 | Advantest Corp | 電荷光学プローブ |
| JP2962234B2 (ja) * | 1996-08-07 | 1999-10-12 | 日本電気株式会社 | 半導体デバイスの寄生ＭＩＭ構造箇所解析法及びＳｉ半導体デバイスの寄生ＭＩＭ構造箇所解析法 |
| US5872360A (en) * | 1996-12-12 | 1999-02-16 | Intel Corporation | Method and apparatus using an infrared laser based optical probe for measuring electric fields directly from active regions in an integrated circuit |
-
1998
- 1998-08-07 US US09/130,741 patent/US6072179A/en not_active Expired - Lifetime
-
1999
- 1999-07-12 TW TW088111791A patent/TW444125B/zh not_active IP Right Cessation
- 1999-07-26 KR KR10-2001-7001619A patent/KR100504135B1/ko not_active Expired - Fee Related
- 1999-07-26 DE DE69927387T patent/DE69927387T2/de not_active Expired - Lifetime
- 1999-07-26 AU AU52166/99A patent/AU5216699A/en not_active Abandoned
- 1999-07-26 IL IL14119599A patent/IL141195A/en not_active IP Right Cessation
- 1999-07-26 EP EP99937303A patent/EP1102999B1/en not_active Expired - Lifetime
- 1999-07-26 WO PCT/US1999/016275 patent/WO2000008478A1/en not_active Ceased
- 1999-07-26 JP JP2000564060A patent/JP4846902B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010072315A (ko) | 2001-07-31 |
| AU5216699A (en) | 2000-02-28 |
| HK1033978A1 (en) | 2001-10-05 |
| JP4846902B2 (ja) | 2011-12-28 |
| KR100504135B1 (ko) | 2005-07-28 |
| WO2000008478A1 (en) | 2000-02-17 |
| JP2002522770A (ja) | 2002-07-23 |
| EP1102999B1 (en) | 2005-09-21 |
| IL141195A0 (en) | 2002-02-10 |
| DE69927387T2 (de) | 2006-07-06 |
| DE69927387D1 (de) | 2006-02-02 |
| US6072179A (en) | 2000-06-06 |
| EP1102999A4 (en) | 2002-10-09 |
| IL141195A (en) | 2004-12-15 |
| EP1102999A1 (en) | 2001-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |