KR100496716B1 - 반도체장치및그제조방법 - Google Patents

반도체장치및그제조방법 Download PDF

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Publication number
KR100496716B1
KR100496716B1 KR10-1998-0035073A KR19980035073A KR100496716B1 KR 100496716 B1 KR100496716 B1 KR 100496716B1 KR 19980035073 A KR19980035073 A KR 19980035073A KR 100496716 B1 KR100496716 B1 KR 100496716B1
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KR
South Korea
Prior art keywords
film
aluminum
barrier layer
aluminum film
temperature
Prior art date
Application number
KR10-1998-0035073A
Other languages
English (en)
Korean (ko)
Other versions
KR19990023960A (ko
Inventor
미치오 아사히나
나오히로 모리야
가즈키 마츠모토
주니치 다케우치
Original Assignee
세이코 엡슨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세이코 엡슨 가부시키가이샤 filed Critical 세이코 엡슨 가부시키가이샤
Publication of KR19990023960A publication Critical patent/KR19990023960A/ko
Application granted granted Critical
Publication of KR100496716B1 publication Critical patent/KR100496716B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-1998-0035073A 1997-08-29 1998-08-28 반도체장치및그제조방법 KR100496716B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP24953597 1997-08-29
JP97-249535 1997-08-29
JP98-67867 1998-03-03
JP6786798 1998-03-03
JP10204396A JPH11317452A (ja) 1997-08-29 1998-07-03 半導体装置およびその製造方法
JP98-204396 1998-07-03

Publications (2)

Publication Number Publication Date
KR19990023960A KR19990023960A (ko) 1999-03-25
KR100496716B1 true KR100496716B1 (ko) 2005-09-30

Family

ID=27299562

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0035073A KR100496716B1 (ko) 1997-08-29 1998-08-28 반도체장치및그제조방법

Country Status (2)

Country Link
JP (1) JPH11317452A (ja)
KR (1) KR100496716B1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207558B1 (en) * 1999-10-21 2001-03-27 Applied Materials, Inc. Barrier applications for aluminum planarization
KR100322890B1 (ko) * 1999-12-30 2002-02-08 박종섭 반도체장치의 절연막 형성방법
JP3480416B2 (ja) 2000-03-27 2003-12-22 セイコーエプソン株式会社 半導体装置
JP3449333B2 (ja) 2000-03-27 2003-09-22 セイコーエプソン株式会社 半導体装置の製造方法
JP2002118167A (ja) * 2000-10-06 2002-04-19 Nec Corp 半導体装置の製造方法
KR100773980B1 (ko) * 2006-08-28 2007-11-19 주식회사 퓨어네츄럴컴퍼니 진공 청소기 겸용 로봇 공기 청정기 및 이에 연결되는진공청소기용 헤드

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05166753A (ja) * 1991-05-14 1993-07-02 Sgs Thomson Microelectron Inc サブミクロンコンタクト用バリア金属プロセス
JPH065715A (ja) * 1992-06-18 1994-01-14 Sony Corp 配線層の形成方法
JPH07312354A (ja) * 1994-04-29 1995-11-28 Sgs Thomson Microelectron Inc 改善したコンタクトバリアを有する集積回路
JPH08186084A (ja) * 1994-12-28 1996-07-16 Nec Corp 半導体装置の製造方法
JPH08203896A (ja) * 1995-01-26 1996-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0917791A (ja) * 1996-08-02 1997-01-17 Hitachi Ltd 半導体装置の製造方法
KR100338094B1 (ko) * 1995-12-04 2002-11-07 주식회사 하이닉스반도체 반도체소자의금속층형성방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05166753A (ja) * 1991-05-14 1993-07-02 Sgs Thomson Microelectron Inc サブミクロンコンタクト用バリア金属プロセス
JPH065715A (ja) * 1992-06-18 1994-01-14 Sony Corp 配線層の形成方法
JPH07312354A (ja) * 1994-04-29 1995-11-28 Sgs Thomson Microelectron Inc 改善したコンタクトバリアを有する集積回路
JPH08186084A (ja) * 1994-12-28 1996-07-16 Nec Corp 半導体装置の製造方法
JPH08203896A (ja) * 1995-01-26 1996-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
KR100338094B1 (ko) * 1995-12-04 2002-11-07 주식회사 하이닉스반도체 반도체소자의금속층형성방법
JPH0917791A (ja) * 1996-08-02 1997-01-17 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH11317452A (ja) 1999-11-16
KR19990023960A (ko) 1999-03-25

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