KR100495987B1 - 가열장치 - Google Patents
가열장치 Download PDFInfo
- Publication number
- KR100495987B1 KR100495987B1 KR10-2002-0061172A KR20020061172A KR100495987B1 KR 100495987 B1 KR100495987 B1 KR 100495987B1 KR 20020061172 A KR20020061172 A KR 20020061172A KR 100495987 B1 KR100495987 B1 KR 100495987B1
- Authority
- KR
- South Korea
- Prior art keywords
- heating element
- auxiliary
- heating
- main
- power
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 351
- 238000009826 distribution Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 51
- 239000000919 ceramic Substances 0.000 claims description 25
- 239000012212 insulator Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229920006015 heat resistant resin Polymers 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Resistance Heating (AREA)
- Control Of Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Abstract
Description
Claims (9)
- 전력을 공급함으로써 발열하여 피가열물을 가열하는 가열면을 구비하는 주가열 소자,상기 가열면의 온도를 미세 조정하도록 전력을 공급함으로써 발열하는 보조 가열 소자,상기 주가열 소자에 전력을 공급하기 위한 주전원,상기 보조 가열 소자에 전력을 공급하기 위한 보조 전원, 및상기 주가열 소자와 상기 보조 가열 소자에 대한 전력 공급량을 각각 독립적으로 제어하는 전원 제어 장치를 구비하고, 상기 주전원으로부터 상기 주가열 소자에 공급되는 전력의 제어 폭에 비하여 상기 보조 전원으로부터 상기 보조 가열 소자에 공급되는 전력의 제어 폭이 작도록, 상기 전원 제어 장치에 의해 상기 보조 가열 소자로의 전력 공급량을 제어하여 상기 가열면의 온도 분포를 제어하는 것을 특징으로 하는 가열 장치.
- 제1항에 있어서, 복수의 상기 보조 가열 소자를 구비하는 것을 특징으로 하는 가열 장치.
- 제1항 또는 제2항에 있어서, 상기 보조 가열 소자는 상기 주가열 소자의 주연부상에 적층되는 것을 특징으로 하는 가열 장치.
- 제2항에 있어서, 상기 복수의 보조 가열 소자는 상기 주가열 소자의 주연부상에 상기 주가열 소자의 중심에 대하여 대략 회전 대칭의 위치에 배치되어 있는 것을 특징으로 하는 가열 장치.
- 제1항 또는 제2항에 있어서, 상기 주가열 소자는 세라믹으로 이루어지는 기판과, 이 기판의 내부에 매설되어 있는 발열체를 구비하는 것을 특징으로 하는 가열 장치.
- 제1항 또는 제2항에 있어서, 상기 보조 가열 소자는 절연체판과, 이 절연체판에 권취된 발열체를 구비하는 것을 특징으로 하는 가열 장치.
- 제4항에 있어서, 상기 기판 및 상기 보조 가열 소자를 기계적으로 적층 상태로 유지시키는 유지 부재를 구비하는 것을 특징으로 하는 가열 장치.
- 제1항 또는 제2항에 있어서, 상기 보조 가열 소자는 세라믹으로 이루어지는 기판과, 이 기판의 내부에 매설되어 있는 발열체를 구비하는 것을 특징으로 하는 가열 장치.
- 제1항 또는 제2항에 있어서, 상기 주가열 소자와 상기 보조 가열 소자는 일체화되어 있고, 세라믹으로 이루어지는 기판의 내부에 매설되는 것을 특징으로 하는 가열 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00318943 | 2001-10-17 | ||
JP2001318943A JP3856293B2 (ja) | 2001-10-17 | 2001-10-17 | 加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030032846A KR20030032846A (ko) | 2003-04-26 |
KR100495987B1 true KR100495987B1 (ko) | 2005-06-20 |
Family
ID=19136563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0061172A KR100495987B1 (ko) | 2001-10-17 | 2002-10-08 | 가열장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6875960B2 (ko) |
JP (1) | JP3856293B2 (ko) |
KR (1) | KR100495987B1 (ko) |
TW (1) | TWI267937B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130010435A (ko) * | 2011-07-13 | 2013-01-28 | 에이에스엠 인터내셔널 엔.브이. | 가열형 회전 기판 지지부를 갖는 웨이퍼 처리 장치 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4026759B2 (ja) * | 2002-11-18 | 2007-12-26 | 日本碍子株式会社 | 加熱装置 |
CN101069010B (zh) * | 2003-07-28 | 2010-12-29 | 菲利普斯&坦洛工业有限公司 | 车辆进气口加热器系统 |
US7126092B2 (en) * | 2005-01-13 | 2006-10-24 | Watlow Electric Manufacturing Company | Heater for wafer processing and methods of operating and manufacturing the same |
KR20060107048A (ko) * | 2005-04-07 | 2006-10-13 | 삼성전자주식회사 | 가열장치 및 그 구동방법 |
US20070125762A1 (en) * | 2005-12-01 | 2007-06-07 | Applied Materials, Inc. | Multi-zone resistive heater |
US9892941B2 (en) * | 2005-12-01 | 2018-02-13 | Applied Materials, Inc. | Multi-zone resistive heater |
US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
WO2009014333A1 (en) * | 2007-07-20 | 2009-01-29 | Lg Electronics Inc. | Electric heater |
US20110073039A1 (en) * | 2009-09-28 | 2011-03-31 | Ron Colvin | Semiconductor deposition system and method |
US10138551B2 (en) | 2010-07-29 | 2018-11-27 | GES Associates LLC | Substrate processing apparatuses and systems |
US8822887B2 (en) * | 2010-10-27 | 2014-09-02 | Shaw Arrow Development, LLC | Multi-mode heater for a diesel emission fluid tank |
CA2847342C (en) | 2011-08-30 | 2016-10-04 | Watlow Electric Manufacturing Company | Method of manufacturing a high definition heater system |
GB201122178D0 (en) | 2011-12-22 | 2012-02-01 | Thermo Fisher Scient Bremen | Method of tandem mass spectrometry |
JP5951438B2 (ja) * | 2012-10-05 | 2016-07-13 | 光洋サーモシステム株式会社 | 熱処理装置 |
US9698041B2 (en) * | 2014-06-09 | 2017-07-04 | Applied Materials, Inc. | Substrate temperature control apparatus including optical fiber heating, substrate temperature control systems, electronic device processing systems, and methods |
CN104853461A (zh) * | 2015-04-29 | 2015-08-19 | 韦道义 | 一种红外加热器 |
CN113675115A (zh) * | 2015-05-22 | 2021-11-19 | 应用材料公司 | 方位可调整的多区域静电夹具 |
JP6806768B2 (ja) * | 2016-04-28 | 2021-01-06 | 京セラ株式会社 | ヒータシステム、セラミックヒータ、プラズマ処理装置及び吸着装置 |
DE202016103834U1 (de) * | 2016-07-15 | 2017-10-19 | Aixtron Se | Vorrichtung zum Beheizen eines Suszeptors eines CVD-Reaktors |
JP6767833B2 (ja) * | 2016-09-29 | 2020-10-14 | 日本特殊陶業株式会社 | 加熱装置 |
CN107845589A (zh) * | 2017-10-27 | 2018-03-27 | 德淮半导体有限公司 | 加热基座以及半导体加工设备 |
KR102091251B1 (ko) * | 2018-08-21 | 2020-03-19 | 엘지전자 주식회사 | 전기 히터 |
JP7407752B2 (ja) * | 2021-02-05 | 2024-01-04 | 日本碍子株式会社 | ウエハ支持台 |
CN114675625A (zh) * | 2022-03-21 | 2022-06-28 | 潍柴动力股份有限公司 | 一种控制器控制方法及装置 |
Citations (1)
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US5927077A (en) * | 1996-04-23 | 1999-07-27 | Dainippon Screen Mfg. Co., Ltd. | Processing system hot plate construction substrate |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US613120A (en) * | 1898-10-25 | Carpet-beater | ||
JPS5959876A (ja) | 1982-09-30 | 1984-04-05 | Ushio Inc | 光照射炉の運転方法 |
JPH05326112A (ja) | 1992-05-21 | 1993-12-10 | Shin Etsu Chem Co Ltd | 複層セラミックスヒーター |
US5700992A (en) * | 1993-10-08 | 1997-12-23 | Toshiba Machine Co., Ltd. | Zigzag heating device with downward directed connecting portions |
US6133557A (en) * | 1995-01-31 | 2000-10-17 | Kyocera Corporation | Wafer holding member |
KR100280634B1 (ko) * | 1996-05-05 | 2001-02-01 | 세이이치로 미야타 | 전기 발열체 및 이를 이용한 정전 척 |
KR100249391B1 (ko) * | 1997-12-30 | 2000-03-15 | 김영환 | 가열장치 |
JP3764278B2 (ja) * | 1998-07-13 | 2006-04-05 | 株式会社東芝 | 基板加熱装置、基板加熱方法及び基板処理方法 |
US6469283B1 (en) * | 1999-03-04 | 2002-10-22 | Applied Materials, Inc. | Method and apparatus for reducing thermal gradients within a substrate support |
US6423949B1 (en) * | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
JP4328009B2 (ja) | 2000-11-30 | 2009-09-09 | 日本碍子株式会社 | 加熱装置 |
-
2001
- 2001-10-17 JP JP2001318943A patent/JP3856293B2/ja not_active Expired - Lifetime
-
2002
- 2002-06-28 TW TW091114405A patent/TWI267937B/zh not_active IP Right Cessation
- 2002-09-17 US US10/244,986 patent/US6875960B2/en not_active Expired - Lifetime
- 2002-10-08 KR KR10-2002-0061172A patent/KR100495987B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US5927077A (en) * | 1996-04-23 | 1999-07-27 | Dainippon Screen Mfg. Co., Ltd. | Processing system hot plate construction substrate |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130010435A (ko) * | 2011-07-13 | 2013-01-28 | 에이에스엠 인터내셔널 엔.브이. | 가열형 회전 기판 지지부를 갖는 웨이퍼 처리 장치 |
KR101944432B1 (ko) * | 2011-07-13 | 2019-01-31 | 에이에스엠 인터내셔널 엔.브이. | 가열형 회전 기판 지지부를 갖는 웨이퍼 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
TWI267937B (en) | 2006-12-01 |
US6875960B2 (en) | 2005-04-05 |
JP3856293B2 (ja) | 2006-12-13 |
JP2003123943A (ja) | 2003-04-25 |
KR20030032846A (ko) | 2003-04-26 |
US20030071032A1 (en) | 2003-04-17 |
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