KR100494709B1 - 자기정렬 전극을 가지는 액정표시소자의 제조방법 - Google Patents
자기정렬 전극을 가지는 액정표시소자의 제조방법 Download PDFInfo
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- KR100494709B1 KR100494709B1 KR10-2002-0021468A KR20020021468A KR100494709B1 KR 100494709 B1 KR100494709 B1 KR 100494709B1 KR 20020021468 A KR20020021468 A KR 20020021468A KR 100494709 B1 KR100494709 B1 KR 100494709B1
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- South Korea
- Prior art keywords
- liquid crystal
- crystal display
- common electrode
- self
- transparent substrate
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 34
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 33
- 238000000151 deposition Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 206010047571 Visual impairment Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 235000013405 beer Nutrition 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
- 박막트랜지스터부와 화소영역부로 분할된 투명기판상에 게이트전극과 공통전극라인을 각각 형성하는 단계;상기 투명기판상에 절연막을 형성하는 단계;상기 결과물 상에 상기 공통전극라인 상측 및 투명기판의 일부분 상측의 절연막부분을 노출시키는 감광막을 형성하는 단계;상기 감광막을 마스크로 상기 절연막의 소정두께를 선택적으로 패터닝한후 상기 감광막을 일정두께만큼 제거하는 단계;상기 일정두께만큼 제거된 감광막을 마스크로 상기 절연막을 선택적으로 패터닝하여 상기 투명기판의 일부분과 공통전극라인을 노출시키는 각각의 테이퍼진 비어홀을 형성하는 단계;상기 감광막을 제거하는 단계;및상기 기판 결과물 상에 ITO를 증착하여 상기 테이퍼진 비어홀의 하부 및 절연막 상부 각각에 공통전극과 화소전극을 동시에 자기정렬시키는 단계를 포함하여 구성되는 것을 특징으로하는 자기정렬 전극을 가지는 액정표시소자의 제조방법.
- 제1항에 있어서, 상기 감광막은 하프톤 노광마스크로 사용하는 것을 특징으로하는 자기정렬 전극을 가지는 액정표시소자의 제조방법.
- 제1항에 있어서, 상기 화소영역상의 테이퍼진 비어홀은 역테이퍼 각을 가지며, 박막트랜지스터부의 비어홀은 정테이퍼진 각을 갖는 것을 특징으로하는 자기정렬 전극을 가지는 액정표시소자의 제조방법.
- 제1항에 있어서, 상기 액정표시소자는 5마스크공정에 의해 제조하는 것을 특징으로하는 자기정렬 전극을 가지는 액정표시소자의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2002-0021468A KR100494709B1 (ko) | 2002-04-19 | 2002-04-19 | 자기정렬 전극을 가지는 액정표시소자의 제조방법 |
Applications Claiming Priority (1)
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KR10-2002-0021468A KR100494709B1 (ko) | 2002-04-19 | 2002-04-19 | 자기정렬 전극을 가지는 액정표시소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20030083080A KR20030083080A (ko) | 2003-10-30 |
KR100494709B1 true KR100494709B1 (ko) | 2005-06-13 |
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KR10-2002-0021468A KR100494709B1 (ko) | 2002-04-19 | 2002-04-19 | 자기정렬 전극을 가지는 액정표시소자의 제조방법 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103779357A (zh) * | 2014-01-24 | 2014-05-07 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板制造方法 |
CN111040779A (zh) * | 2018-10-15 | 2020-04-21 | 北京八亿时空液晶科技股份有限公司 | 一种液晶垂直自配向添加剂及其制备方法与应用 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1770788A3 (en) | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
CN102709241A (zh) | 2012-05-11 | 2012-10-03 | 北京京东方光电科技有限公司 | 一种薄膜晶体管阵列基板及制作方法和显示装置 |
KR101493128B1 (ko) * | 2012-09-27 | 2015-02-23 | 엘지디스플레이 주식회사 | 액정표시패널 및 그 제조방법 |
KR102442615B1 (ko) * | 2015-07-09 | 2022-09-14 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판의 제조방법 |
KR102494781B1 (ko) * | 2015-12-30 | 2023-02-02 | 엘지디스플레이 주식회사 | 프린지-필드 스위칭 액정표시장치 및 그 제조방법 |
CN105931985A (zh) * | 2016-05-13 | 2016-09-07 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN106129063B (zh) * | 2016-07-05 | 2019-06-25 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0792488A (ja) * | 1993-09-20 | 1995-04-07 | Hitachi Ltd | 液晶表示基板の製造方法 |
KR19990012990A (ko) * | 1997-07-31 | 1999-02-25 | 구자홍 | 횡전계방식 액정표시장치 및 그 제조방법 |
JP2001330854A (ja) * | 2000-05-23 | 2001-11-30 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
KR20020002054A (ko) * | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | 프린지 필드 구동 모드 액정 표시 장치 및 그 제조방법 |
KR20020053575A (ko) * | 2000-12-27 | 2002-07-05 | 주식회사 현대 디스플레이 테크놀로지 | 액정표시장치와 그 제조방법 |
-
2002
- 2002-04-19 KR KR10-2002-0021468A patent/KR100494709B1/ko active IP Right Grant
Patent Citations (5)
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JPH0792488A (ja) * | 1993-09-20 | 1995-04-07 | Hitachi Ltd | 液晶表示基板の製造方法 |
KR19990012990A (ko) * | 1997-07-31 | 1999-02-25 | 구자홍 | 횡전계방식 액정표시장치 및 그 제조방법 |
JP2001330854A (ja) * | 2000-05-23 | 2001-11-30 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
KR20020002054A (ko) * | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | 프린지 필드 구동 모드 액정 표시 장치 및 그 제조방법 |
KR20020053575A (ko) * | 2000-12-27 | 2002-07-05 | 주식회사 현대 디스플레이 테크놀로지 | 액정표시장치와 그 제조방법 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103779357A (zh) * | 2014-01-24 | 2014-05-07 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板制造方法 |
WO2015109710A1 (zh) * | 2014-01-24 | 2015-07-30 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板制造方法 |
US9779949B2 (en) | 2014-01-24 | 2017-10-03 | Boe Technology Group Co., Ltd. | Array substrate, display device, and manufacturing method of array substrate |
CN111040779A (zh) * | 2018-10-15 | 2020-04-21 | 北京八亿时空液晶科技股份有限公司 | 一种液晶垂直自配向添加剂及其制备方法与应用 |
CN111040779B (zh) * | 2018-10-15 | 2022-06-10 | 北京八亿时空液晶科技股份有限公司 | 一种液晶垂直自配向添加剂及其制备方法与应用 |
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