KR100408944B1 - 반도체 메모리와 그것을 생산하기 위한 방법 - Google Patents

반도체 메모리와 그것을 생산하기 위한 방법 Download PDF

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Publication number
KR100408944B1
KR100408944B1 KR10-2000-7011234A KR20007011234A KR100408944B1 KR 100408944 B1 KR100408944 B1 KR 100408944B1 KR 20007011234 A KR20007011234 A KR 20007011234A KR 100408944 B1 KR100408944 B1 KR 100408944B1
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KR
South Korea
Prior art keywords
region
contact
semiconductor memory
substrate
bit
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-7011234A
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English (en)
Korean (ko)
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KR20010042569A (ko
Inventor
안드레아스 루쉬
슈테펜 로텐호이서
알렉산더 트뤼비
요이찌 오타니
울리히 침머만
Original Assignee
인피니언 테크놀로지스 아게
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Publication of KR20010042569A publication Critical patent/KR20010042569A/ko
Application granted granted Critical
Publication of KR100408944B1 publication Critical patent/KR100408944B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR10-2000-7011234A 1998-04-08 1999-03-25 반도체 메모리와 그것을 생산하기 위한 방법 Expired - Fee Related KR100408944B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19815874.2 1998-04-08
DE19815874A DE19815874C2 (de) 1998-04-08 1998-04-08 ROM-Halbleiter-Speichervorrichtung mit Implantationsbereichen zur Einstellung eines Kontaktwiderstandes und Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
KR20010042569A KR20010042569A (ko) 2001-05-25
KR100408944B1 true KR100408944B1 (ko) 2003-12-11

Family

ID=7864069

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-7011234A Expired - Fee Related KR100408944B1 (ko) 1998-04-08 1999-03-25 반도체 메모리와 그것을 생산하기 위한 방법

Country Status (7)

Country Link
US (1) US7230877B1 (https=)
EP (1) EP1070352B1 (https=)
JP (1) JP2002511655A (https=)
KR (1) KR100408944B1 (https=)
DE (2) DE19815874C2 (https=)
TW (1) TW404026B (https=)
WO (1) WO1999053546A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7388778B2 (en) 2005-04-27 2008-06-17 Samsung Electronics Co., Ltd. Nonvolatile memory devices that support virtual page storage using odd-state memory cells
US7876614B2 (en) 2007-10-23 2011-01-25 Samsung Electronics Co., Ltd. Multi-bit flash memory device and program and read methods thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102456693A (zh) * 2010-10-27 2012-05-16 上海华虹Nec电子有限公司 掩膜型rom器件的单元结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967666A (ja) * 1982-10-09 1984-04-17 Mitsubishi Electric Corp Ｒｏｍ
JP2508247B2 (ja) * 1989-03-20 1996-06-19 三菱電機株式会社 マスクｒｏｍの製造方法
US5526306A (en) * 1994-02-10 1996-06-11 Mega Chips Corporation Semiconductor memory device and method of fabricating the same
JPH0837164A (ja) * 1994-07-21 1996-02-06 Nec Corp 半導体装置の製造方法
TW287313B (https=) * 1995-02-20 1996-10-01 Matsushita Electric Industrial Co Ltd
JP3586332B2 (ja) * 1995-02-28 2004-11-10 新日本製鐵株式会社 不揮発性半導体記憶装置及びその製造方法
US5563098A (en) * 1995-04-10 1996-10-08 Taiwan Semiconductor Manufacturing Company Buried contact oxide etch with poly mask procedure
JP3185862B2 (ja) * 1997-09-10 2001-07-11 日本電気株式会社 マスク型半導体装置の製造方法
US6030871A (en) * 1998-05-05 2000-02-29 Saifun Semiconductors Ltd. Process for producing two bit ROM cell utilizing angled implant
US6200861B1 (en) * 1999-03-26 2001-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating high density multiple states mask ROM cells

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7388778B2 (en) 2005-04-27 2008-06-17 Samsung Electronics Co., Ltd. Nonvolatile memory devices that support virtual page storage using odd-state memory cells
US7483301B2 (en) 2005-04-27 2009-01-27 Samsung Electronics Co., Ltd. Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
US7710773B2 (en) 2005-04-27 2010-05-04 Samsung Electronics Co., Ltd. Nonvolatile memory devices that support virtual page storage using odd-state memory cells
US7876614B2 (en) 2007-10-23 2011-01-25 Samsung Electronics Co., Ltd. Multi-bit flash memory device and program and read methods thereof

Also Published As

Publication number Publication date
TW404026B (en) 2000-09-01
DE59914831D1 (de) 2008-09-25
EP1070352A1 (de) 2001-01-24
EP1070352B1 (de) 2008-08-13
DE19815874A1 (de) 1999-10-14
US7230877B1 (en) 2007-06-12
JP2002511655A (ja) 2002-04-16
KR20010042569A (ko) 2001-05-25
DE19815874C2 (de) 2002-06-13
WO1999053546A1 (de) 1999-10-21

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