KR100397078B1 - 전압증배기 - Google Patents

전압증배기 Download PDF

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Publication number
KR100397078B1
KR100397078B1 KR10-1998-0705437A KR19980705437A KR100397078B1 KR 100397078 B1 KR100397078 B1 KR 100397078B1 KR 19980705437 A KR19980705437 A KR 19980705437A KR 100397078 B1 KR100397078 B1 KR 100397078B1
Authority
KR
South Korea
Prior art keywords
transistor
pumping
transistors
high voltage
clock signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1998-0705437A
Other languages
English (en)
Korean (ko)
Other versions
KR19990077291A (ko
Inventor
크리스틀 라우터바흐
베르너 베버
Original Assignee
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 지멘스 악티엔게젤샤프트 filed Critical 지멘스 악티엔게젤샤프트
Publication of KR19990077291A publication Critical patent/KR19990077291A/ko
Application granted granted Critical
Publication of KR100397078B1 publication Critical patent/KR100397078B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR10-1998-0705437A 1996-01-16 1996-12-10 전압증배기 Expired - Fee Related KR100397078B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19601369.0 1996-01-16
DE19601369A DE19601369C1 (de) 1996-01-16 1996-01-16 Vorrichtung zur Spannungsvervielfachung, insb. verwendbar zur Erzeugung der Löschspannung für ein EEPROM

Publications (2)

Publication Number Publication Date
KR19990077291A KR19990077291A (ko) 1999-10-25
KR100397078B1 true KR100397078B1 (ko) 2003-10-17

Family

ID=7782884

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0705437A Expired - Fee Related KR100397078B1 (ko) 1996-01-16 1996-12-10 전압증배기

Country Status (11)

Country Link
EP (1) EP0875063B1 (enExample)
JP (1) JP3154727B2 (enExample)
KR (1) KR100397078B1 (enExample)
CN (1) CN1106647C (enExample)
AT (1) ATE181172T1 (enExample)
DE (2) DE19601369C1 (enExample)
ES (1) ES2135270T3 (enExample)
IN (1) IN191530B (enExample)
RU (1) RU2159472C2 (enExample)
UA (1) UA44823C2 (enExample)
WO (1) WO1997026657A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130574A (en) * 1997-01-24 2000-10-10 Siemens Aktiengesellschaft Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump
KR100466198B1 (ko) * 1997-12-12 2005-04-08 주식회사 하이닉스반도체 승압회로
JP3385960B2 (ja) 1998-03-16 2003-03-10 日本電気株式会社 負電圧チャージポンプ回路
JP4393182B2 (ja) 2003-05-19 2010-01-06 三菱電機株式会社 電圧発生回路
DE102005033003A1 (de) * 2005-07-14 2007-01-25 Infineon Technologies Ag Integrierte Schaltungsanordnung zur Potenzialerhöhung
US7855591B2 (en) * 2006-06-07 2010-12-21 Atmel Corporation Method and system for providing a charge pump very low voltage applications
CN101662208B (zh) * 2008-08-26 2013-10-30 天利半导体（深圳）有限公司 一种实现正负高压的电荷泵电路
US20130257522A1 (en) * 2012-03-30 2013-10-03 Tyler Daigle High input voltage charge pump
US9766171B2 (en) 2014-03-17 2017-09-19 Columbia Insurance Company Devices, systems and method for flooring performance testing
RU2762290C9 (ru) * 2020-11-30 2022-01-31 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Образования "Новосибирский Государственный Технический Университет" Инвертирующий повышающий преобразователь постоянного напряжения

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
KR920006991A (ko) * 1990-09-25 1992-04-28 김광호 반도체메모리 장치의 고전압발생회로
JP2771729B2 (ja) * 1992-04-16 1998-07-02 三菱電機株式会社 チャージポンプ回路
JP3743453B2 (ja) * 1993-01-27 2006-02-08 セイコーエプソン株式会社 不揮発性半導体記憶装置
EP0931379B1 (en) 1996-10-10 2008-08-06 Macronix International Co., Ltd. Triple well charge pump

Also Published As

Publication number Publication date
UA44823C2 (uk) 2002-03-15
DE59602202D1 (de) 1999-07-15
JPH11503261A (ja) 1999-03-23
WO1997026657A1 (de) 1997-07-24
CN1207824A (zh) 1999-02-10
CN1106647C (zh) 2003-04-23
EP0875063B1 (de) 1999-06-09
IN191530B (enExample) 2003-12-06
EP0875063A1 (de) 1998-11-04
RU2159472C2 (ru) 2000-11-20
ES2135270T3 (es) 1999-10-16
DE19601369C1 (de) 1997-04-10
KR19990077291A (ko) 1999-10-25
ATE181172T1 (de) 1999-06-15
JP3154727B2 (ja) 2001-04-09

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