KR100386188B1 - 트랜지스터를 구비하는 고전압 스위치 회로 및 그를구비하는 반도체 기억 장치 - Google Patents

트랜지스터를 구비하는 고전압 스위치 회로 및 그를구비하는 반도체 기억 장치 Download PDF

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Publication number
KR100386188B1
KR100386188B1 KR10-2001-0001694A KR20010001694A KR100386188B1 KR 100386188 B1 KR100386188 B1 KR 100386188B1 KR 20010001694 A KR20010001694 A KR 20010001694A KR 100386188 B1 KR100386188 B1 KR 100386188B1
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KR
South Korea
Prior art keywords
voltage
node
circuit
high voltage
transistor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2001-0001694A
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English (en)
Korean (ko)
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KR20010104198A (ko
Inventor
가와이신지
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20010104198A publication Critical patent/KR20010104198A/ko
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Publication of KR100386188B1 publication Critical patent/KR100386188B1/ko
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
KR10-2001-0001694A 2000-05-12 2001-01-12 트랜지스터를 구비하는 고전압 스위치 회로 및 그를구비하는 반도체 기억 장치 Expired - Fee Related KR100386188B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000140357A JP2001319490A (ja) 2000-05-12 2000-05-12 高電圧スイッチ回路および当該高電圧スイッチ回路を備える半導体記憶装置
JP2000-140357 2000-05-12

Publications (2)

Publication Number Publication Date
KR20010104198A KR20010104198A (ko) 2001-11-24
KR100386188B1 true KR100386188B1 (ko) 2003-06-02

Family

ID=18647667

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0001694A Expired - Fee Related KR100386188B1 (ko) 2000-05-12 2001-01-12 트랜지스터를 구비하는 고전압 스위치 회로 및 그를구비하는 반도체 기억 장치

Country Status (4)

Country Link
US (1) US6411554B1 (https=)
JP (1) JP2001319490A (https=)
KR (1) KR100386188B1 (https=)
TW (1) TW497332B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3603769B2 (ja) * 2000-09-06 2004-12-22 セイコーエプソン株式会社 レベルシフト回路及びそれを用いた半導体装置
WO2004042923A1 (ja) * 2002-11-06 2004-05-21 Nec Corporation レベル変換回路
US7006389B2 (en) * 2003-12-12 2006-02-28 Micron Technology, Inc. Voltage translator for multiple voltage operations
US7061298B2 (en) * 2003-08-22 2006-06-13 Idaho Research Foundation, Inc. High voltage to low voltage level shifter
US7151400B2 (en) * 2004-07-13 2006-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Boost-biased level shifter
KR100699852B1 (ko) * 2005-07-14 2007-03-27 삼성전자주식회사 Ｈｐｍｏｓ를 이용한 불휘발성 메모리 장치의 워드라인디코더
JP4199765B2 (ja) * 2005-12-02 2008-12-17 マイクロン テクノロジー，インコーポレイテッド 高電圧スイッチング回路
US7599231B2 (en) * 2006-10-11 2009-10-06 Atmel Corporation Adaptive regulator for idle state in a charge pump circuit of a memory device
US7605633B2 (en) * 2007-03-20 2009-10-20 Kabushiki Kaisha Toshiba Level shift circuit which improved the blake down voltage
GB2467183B (en) * 2009-01-27 2013-08-07 Innovision Res & Tech Plc Apparatus for use in near field rf communicators
JP2009163874A (ja) * 2009-04-20 2009-07-23 Renesas Technology Corp 半導体装置
JP5045730B2 (ja) * 2009-11-02 2012-10-10 富士通セミコンダクター株式会社 レベル変換回路
JP5686701B2 (ja) * 2011-08-11 2015-03-18 新日本無線株式会社 正負電圧論理出力回路およびこれを用いた高周波スイッチ回路
US20130328851A1 (en) * 2012-06-08 2013-12-12 Apple Inc. Ground noise propagation reduction for an electronic device
KR102072767B1 (ko) 2013-11-21 2020-02-03 삼성전자주식회사 고전압 스위치 및 그것을 포함하는 불휘발성 메모리 장치
KR20150121288A (ko) * 2014-04-17 2015-10-29 에스케이하이닉스 주식회사 고전압 스위치 회로 및 이를 포함하는 비휘발성 메모리
US9991225B2 (en) 2015-06-23 2018-06-05 Texas Instruments Incorporated High voltage device with multi-electrode control
US10033361B2 (en) * 2015-12-28 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Level-shift circuit, driver IC, and electronic device
WO2023080433A1 (ko) * 2021-11-04 2023-05-11 서울대학교산학협력단 커런트 미러 회로 및 이를 포함하는 뉴로모픽 장치
EP4496222B1 (en) * 2023-07-21 2025-12-31 STMicroelectronics International N.V. HIGH VOLTAGE SWITCHING CIRCUIT AND CORRESPONDING OPERATING METHOD

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243236A (en) * 1991-12-31 1993-09-07 Intel Corporation High voltage CMOS switch with protection against diffusion to well reverse junction breakdown
FR2693327B1 (fr) * 1992-07-06 1994-08-26 Sgs Thomson Microelectronics Circuit de commutation de haute tension.
US5399928A (en) * 1993-05-28 1995-03-21 Macronix International Co., Ltd. Negative voltage generator for flash EPROM design
US5619150A (en) * 1995-07-07 1997-04-08 Micron Quantum Devices, Inc. Switch for minimizing transistor exposure to high voltage
JP3662326B2 (ja) * 1996-01-09 2005-06-22 株式会社ルネサステクノロジ レベル変換回路
JPH09261037A (ja) 1996-03-18 1997-10-03 Fujitsu Ltd 半導体論理回路
US5736869A (en) * 1996-05-16 1998-04-07 Lsi Logic Corporation Output driver with level shifting and voltage protection

Also Published As

Publication number Publication date
US6411554B1 (en) 2002-06-25
TW497332B (en) 2002-08-01
JP2001319490A (ja) 2001-11-16
KR20010104198A (ko) 2001-11-24

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