KR100385363B1 - 반도체메모리 - Google Patents

반도체메모리 Download PDF

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Publication number
KR100385363B1
KR100385363B1 KR1019950051277A KR19950051277A KR100385363B1 KR 100385363 B1 KR100385363 B1 KR 100385363B1 KR 1019950051277 A KR1019950051277 A KR 1019950051277A KR 19950051277 A KR19950051277 A KR 19950051277A KR 100385363 B1 KR100385363 B1 KR 100385363B1
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KR
South Korea
Prior art keywords
potential
memory
information
plate electrode
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950051277A
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English (en)
Korean (ko)
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KR960025784A (ko
Inventor
간 다께우찌
가쯔미 마쯔노
가즈히꼬 가지가야
오사무 나가시마
마사또시 하세가와
Original Assignee
가부시끼가이샤 히다치 세이사꾸쇼
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Publication date
Application filed by 가부시끼가이샤 히다치 세이사꾸쇼 filed Critical 가부시끼가이샤 히다치 세이사꾸쇼
Publication of KR960025784A publication Critical patent/KR960025784A/ko
Application granted granted Critical
Publication of KR100385363B1 publication Critical patent/KR100385363B1/ko
Assigned to 엘피다 메모리 가부시키가이샤 reassignment 엘피다 메모리 가부시키가이샤 권리의 전부이전등록 Assignors: 가부시끼가이샤 히다치 세이사꾸쇼
Assigned to 램버스 인코포레이티드 reassignment 램버스 인코포레이티드 권리의 전부이전등록 Assignors: 엘피다 메모리 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019950051277A 1994-12-20 1995-12-18 반도체메모리 Expired - Fee Related KR100385363B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31629594A JP3590115B2 (ja) 1994-12-20 1994-12-20 半導体メモリ
JP94-316295 1994-12-20

Publications (2)

Publication Number Publication Date
KR960025784A KR960025784A (ko) 1996-07-20
KR100385363B1 true KR100385363B1 (ko) 2004-03-02

Family

ID=18075530

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950051277A Expired - Fee Related KR100385363B1 (ko) 1994-12-20 1995-12-18 반도체메모리

Country Status (4)

Country Link
US (1) US5615145A (https=)
JP (1) JP3590115B2 (https=)
KR (1) KR100385363B1 (https=)
TW (1) TW293908B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100457346B1 (ko) * 1997-11-27 2005-04-06 삼성전자주식회사 강유전체 랜덤 액세스 메모리 장치

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US5682344A (en) * 1995-09-11 1997-10-28 Micron Technology, Inc. Destructive read protection using address blocking technique
JP3645338B2 (ja) * 1995-12-11 2005-05-11 株式会社東芝 不揮発性半導体記憶装置
KR100601928B1 (ko) * 1996-06-10 2006-10-04 삼성전자주식회사 강유전체랜덤액세서메모리의비휘발성유지장치및방법
US5703804A (en) * 1996-09-26 1997-12-30 Sharp Kabushiki K.K. Semiconductor memory device
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법
US6097624A (en) * 1997-09-17 2000-08-01 Samsung Electronics Co., Ltd. Methods of operating ferroelectric memory devices having reconfigurable bit lines
JP3003628B2 (ja) * 1997-06-16 2000-01-31 日本電気株式会社 強誘電体メモリとその書き込み方法
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
KR100247934B1 (ko) 1997-10-07 2000-03-15 윤종용 강유전체 램 장치 및 그 제조방법
US5880989A (en) * 1997-11-14 1999-03-09 Ramtron International Corporation Sensing methodology for a 1T/1C ferroelectric memory
US20050122765A1 (en) * 1997-11-14 2005-06-09 Allen Judith E. Reference cell configuration for a 1T/1C ferroelectric memory
US5969980A (en) * 1997-11-14 1999-10-19 Ramtron International Corporation Sense amplifier configuration for a 1T/1C ferroelectric memory
US6028783A (en) 1997-11-14 2000-02-22 Ramtron International Corporation Memory cell configuration for a 1T/1C ferroelectric memory
US5986919A (en) * 1997-11-14 1999-11-16 Ramtron International Corporation Reference cell configuration for a 1T/1C ferroelectric memory
US6002634A (en) * 1997-11-14 1999-12-14 Ramtron International Corporation Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
US5956266A (en) * 1997-11-14 1999-09-21 Ramtron International Corporation Reference cell for a 1T/1C ferroelectric memory
US5978251A (en) * 1997-11-14 1999-11-02 Ramtron International Corporation Plate line driver circuit for a 1T/1C ferroelectric memory
US5892728A (en) * 1997-11-14 1999-04-06 Ramtron International Corporation Column decoder configuration for a 1T/1C ferroelectric memory
US5995406A (en) * 1997-11-14 1999-11-30 Ramtron International Corporation Plate line segmentation in a 1T/1C ferroelectric memory
JP3717097B2 (ja) * 1998-07-29 2005-11-16 富士通株式会社 強誘電体メモリ
US6204723B1 (en) * 1999-04-29 2001-03-20 International Business Machines Corporation Bias circuit for series connected decoupling capacitors
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same
KR100318440B1 (ko) * 1999-06-28 2001-12-24 박종섭 강유전체 메모리 장치 및 그의 구동방법
KR100324594B1 (ko) * 1999-06-28 2002-02-16 박종섭 강유전체 메모리 장치
US6392916B1 (en) * 1999-10-01 2002-05-21 Samsung Electronics Co., Ltd. Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device
JP2001297581A (ja) * 2000-04-11 2001-10-26 Fujitsu Ltd データ読み出し方法及び半導体記憶装置
JP4481464B2 (ja) * 2000-09-20 2010-06-16 株式会社東芝 半導体記憶装置及びその製造方法
KR100389032B1 (ko) * 2000-11-21 2003-06-25 삼성전자주식회사 강유전체 메모리 장치 및 그의 제조 방법
JP4329919B2 (ja) * 2001-03-13 2009-09-09 Ｏｋｉセミコンダクタ株式会社 半導体メモリおよび半導体メモリの駆動方法
TW548803B (en) * 2001-06-06 2003-08-21 Matsushita Electric Industrial Co Ltd Non-volatile selector and integrated circuit
US20040061990A1 (en) * 2002-09-26 2004-04-01 Dougherty T. Kirk Temperature-compensated ferroelectric capacitor device, and its fabrication
EP1605468B1 (en) 2003-03-19 2008-08-06 Fujitsu Limited Semiconductor memory
JP3783696B2 (ja) * 2003-04-10 2006-06-07 セイコーエプソン株式会社 強誘電体記憶装置のデータ記憶方法
JP2005064427A (ja) 2003-08-20 2005-03-10 Elpida Memory Inc 不揮発性ランダムアクセスメモリおよびその製造方法
JP4545133B2 (ja) * 2006-11-09 2010-09-15 富士通株式会社 半導体記憶装置及びその製造方法
US8686415B2 (en) * 2010-12-17 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
EP3507805B1 (en) 2016-08-31 2025-10-01 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
SG11201901210UA (en) 2016-08-31 2019-03-28 Micron Technology Inc Ferroelectric memory cells
US10282108B2 (en) 2016-08-31 2019-05-07 Micron Technology, Inc. Hybrid memory device using different types of capacitors
CN109643571A (zh) 2016-08-31 2019-04-16 美光科技公司 包含铁电存储器及用于存取铁电存储器的设备及方法
US10867675B2 (en) * 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3222243B2 (ja) * 1993-01-25 2001-10-22 株式会社日立製作所 半導体記憶装置とそれを用いた情報処理システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100457346B1 (ko) * 1997-11-27 2005-04-06 삼성전자주식회사 강유전체 랜덤 액세스 메모리 장치

Also Published As

Publication number Publication date
JPH08171793A (ja) 1996-07-02
US5615145A (en) 1997-03-25
TW293908B (https=) 1996-12-21
JP3590115B2 (ja) 2004-11-17
KR960025784A (ko) 1996-07-20

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