KR100351049B1 - 웨이퍼 가열 방법 및 이를 적용한 장치 - Google Patents

웨이퍼 가열 방법 및 이를 적용한 장치 Download PDF

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Publication number
KR100351049B1
KR100351049B1 KR1019990030350A KR19990030350A KR100351049B1 KR 100351049 B1 KR100351049 B1 KR 100351049B1 KR 1019990030350 A KR1019990030350 A KR 1019990030350A KR 19990030350 A KR19990030350 A KR 19990030350A KR 100351049 B1 KR100351049 B1 KR 100351049B1
Authority
KR
South Korea
Prior art keywords
heat
heat medium
wafer
solid
medium
Prior art date
Application number
KR1019990030350A
Other languages
English (en)
Korean (ko)
Other versions
KR20010011123A (ko
Inventor
박찬훈
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019990030350A priority Critical patent/KR100351049B1/ko
Priority to TW088122012A priority patent/TW428224B/zh
Priority to CNB001201468A priority patent/CN1193266C/zh
Priority to TW089114514A priority patent/TW473873B/zh
Priority to DE10036001A priority patent/DE10036001A1/de
Priority to GB0018282A priority patent/GB2352507A/en
Priority to DE10036183A priority patent/DE10036183B4/de
Priority to CNB001241370A priority patent/CN1249522C/zh
Priority to GB0018386A priority patent/GB2352508B/en
Priority to JP2000225962A priority patent/JP2001085324A/ja
Priority to JP2000225991A priority patent/JP2001093795A/ja
Publication of KR20010011123A publication Critical patent/KR20010011123A/ko
Priority to US10/011,418 priority patent/US20020088608A1/en
Application granted granted Critical
Publication of KR100351049B1 publication Critical patent/KR100351049B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0233—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Surface Heating Bodies (AREA)
  • Resistance Heating (AREA)
KR1019990030350A 1999-07-26 1999-07-26 웨이퍼 가열 방법 및 이를 적용한 장치 KR100351049B1 (ko)

Priority Applications (12)

Application Number Priority Date Filing Date Title
KR1019990030350A KR100351049B1 (ko) 1999-07-26 1999-07-26 웨이퍼 가열 방법 및 이를 적용한 장치
TW088122012A TW428224B (en) 1999-07-26 1999-12-15 Wafer heating method and device adopting the same
CNB001201468A CN1193266C (zh) 1999-07-26 2000-07-18 晶片加热装置以及使用其加热晶片的方法
TW089114514A TW473873B (en) 1999-07-26 2000-07-20 Method and apparatus for heating a wafer, and method and apparatus for baking a photoresist film on a wafer
GB0018282A GB2352507A (en) 1999-07-26 2000-07-25 A method and apparatus for heating a wafer
DE10036183A DE10036183B4 (de) 1999-07-26 2000-07-25 Verfahren und Gerät zum Erhitzen eines Wafers und Verfahren und Gerät zum Ausheizen eines Photoresistfilms auf einem Wafer
DE10036001A DE10036001A1 (de) 1999-07-26 2000-07-25 Vorrichtung und Verfahren zur Waferheizung
CNB001241370A CN1249522C (zh) 1999-07-26 2000-07-26 加热干胶片及在干胶片上烘烤光致抗蚀剂膜的方法和设备
GB0018386A GB2352508B (en) 1999-07-26 2000-07-26 Method and apparatus for heating a wafer and method and apparatus for baking a photoresist film on a wafer
JP2000225962A JP2001085324A (ja) 1999-07-26 2000-07-26 ウェーハ加熱方法及びこれを適用した装置
JP2000225991A JP2001093795A (ja) 1999-07-26 2000-07-26 ウェーハを加熱するための方法と装置及びウェーハ上にフォトレジストフィルムをベイキングするための方法と装置
US10/011,418 US20020088608A1 (en) 1999-07-26 2001-12-11 Method and apparatus for heating a wafer, and method and apparatus for baking a photoresist film on a wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990030350A KR100351049B1 (ko) 1999-07-26 1999-07-26 웨이퍼 가열 방법 및 이를 적용한 장치

Publications (2)

Publication Number Publication Date
KR20010011123A KR20010011123A (ko) 2001-02-15
KR100351049B1 true KR100351049B1 (ko) 2002-09-09

Family

ID=36693973

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990030350A KR100351049B1 (ko) 1999-07-26 1999-07-26 웨이퍼 가열 방법 및 이를 적용한 장치

Country Status (6)

Country Link
JP (2) JP2001093795A (de)
KR (1) KR100351049B1 (de)
CN (2) CN1193266C (de)
DE (2) DE10036183B4 (de)
GB (2) GB2352507A (de)
TW (2) TW428224B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3882141B2 (ja) * 2002-06-13 2007-02-14 日鉱金属株式会社 気相成長装置および気相成長方法
US7170582B2 (en) * 2004-12-13 2007-01-30 Asml Netherlands B.V. Support device and lightographic apparatus
JP4657940B2 (ja) * 2006-02-10 2011-03-23 東京エレクトロン株式会社 基板の処理システム
JP2007258303A (ja) * 2006-03-22 2007-10-04 Tokyo Electron Ltd 基板熱処理装置
CN101495922B (zh) * 2006-07-28 2012-12-12 迈普尔平版印刷Ip有限公司 光刻系统、热消散方法和框架
US20080145038A1 (en) * 2006-12-15 2008-06-19 Applied Materials, Inc. Method and apparatus for heating a substrate
US20080142208A1 (en) * 2006-12-15 2008-06-19 Applied Materials, Inc. Method and apparatus for heating a substrate
NL2003258A1 (nl) 2008-08-08 2010-02-09 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
TWI835063B (zh) * 2016-07-28 2024-03-11 荷蘭商Ａｓｍｌ荷蘭公司 基板夾持裝置、用於製造此裝置之方法及用於處理或將樣本成像之儀器及方法
US20180096867A1 (en) * 2016-09-30 2018-04-05 Momentive Performance Materials Inc. Heating apparatus with controlled thermal contact
JP6837202B2 (ja) * 2017-01-23 2021-03-03 パナソニックＩｐマネジメント株式会社 基材加熱装置および方法および電子デバイスの製造方法
CN108662930A (zh) * 2017-09-28 2018-10-16 上海微电子装备（集团）股份有限公司 一种热板装置
CN108158039B (zh) * 2018-01-03 2023-07-11 云南中烟工业有限责任公司 一种集成多个Pt温度传感器的MEMS发热芯片及其制造方法
CN108354228B (zh) * 2018-01-03 2023-07-25 云南中烟工业有限责任公司 一种集成Pt温度传感器的MEMS发热芯片及其制造方法
CN108185526B (zh) * 2018-01-03 2023-09-01 云南中烟工业有限责任公司 一种集成二极管温度传感器的mems发热芯片及其制造方法
CN108158040B (zh) * 2018-01-03 2023-11-21 云南中烟工业有限责任公司 一种均匀发热的mems电子烟芯片及其制造方法
CN108538760B (zh) * 2018-04-03 2020-11-27 德淮半导体有限公司 热板结构
JP7477498B2 (ja) * 2018-08-01 2024-05-01 モメンティブ パフォーマンス マテリアルズ インコーポレイテッド 取り外し可能なサーマルレベラー
KR102236933B1 (ko) * 2019-10-21 2021-04-05 정승수 반도체 및 디스플레이 패널 제조용 히터 블록
US11487206B2 (en) * 2019-12-30 2022-11-01 Texas Instruments Incorporated Methods and apparatus for digital material deposition onto semiconductor wafers
JP7491556B2 (ja) * 2020-06-23 2024-05-28 トクデン株式会社 伝熱プレート

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5025133A (en) * 1989-04-04 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer heating device
JPH03280417A (ja) * 1990-03-28 1991-12-11 Hoya Corp 基板熱処理装置
KR920701534A (ko) * 1989-05-08 1992-08-12 프레데릭 얀 스미트 반도체 웨이퍼 처리장치 및 방법
JPH06349722A (ja) * 1993-06-10 1994-12-22 Dainippon Screen Mfg Co Ltd 基板加熱装置
JPH10189611A (ja) * 1996-12-24 1998-07-21 Sony Corp 半導体ウェーハの加熱装置
KR20000043020A (ko) * 1998-12-28 2000-07-15 김상식 판형 히트 파이프

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129018B (en) * 1982-08-30 1986-01-29 Ricoh Kk Vacuum evaporation apparatus
JP3119950B2 (ja) * 1992-09-30 2000-12-25 株式会社東芝 パターン形成方法
JPH07152158A (ja) * 1993-11-30 1995-06-16 Sigma Merutetsuku Kk 基板加熱装置
JP3614503B2 (ja) * 1995-04-18 2005-01-26 富士写真フイルム株式会社 感光性平版印刷版の加熱処理方法及び装置
JP3983831B2 (ja) * 1995-05-30 2007-09-26 シグマメルテック株式会社 基板ベーキング装置及び基板ベーキング方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5025133A (en) * 1989-04-04 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer heating device
KR920701534A (ko) * 1989-05-08 1992-08-12 프레데릭 얀 스미트 반도체 웨이퍼 처리장치 및 방법
JPH03280417A (ja) * 1990-03-28 1991-12-11 Hoya Corp 基板熱処理装置
JPH06349722A (ja) * 1993-06-10 1994-12-22 Dainippon Screen Mfg Co Ltd 基板加熱装置
JPH10189611A (ja) * 1996-12-24 1998-07-21 Sony Corp 半導体ウェーハの加熱装置
KR20000043020A (ko) * 1998-12-28 2000-07-15 김상식 판형 히트 파이프

Also Published As

Publication number Publication date
CN1282005A (zh) 2001-01-31
CN1249522C (zh) 2006-04-05
GB0018386D0 (en) 2000-09-13
CN1282003A (zh) 2001-01-31
DE10036001A1 (de) 2001-02-22
GB2352508B (en) 2003-10-08
DE10036183A1 (de) 2001-02-01
GB0018282D0 (en) 2000-09-13
TW428224B (en) 2001-04-01
TW473873B (en) 2002-01-21
CN1193266C (zh) 2005-03-16
GB2352508A (en) 2001-01-31
KR20010011123A (ko) 2001-02-15
GB2352507A (en) 2001-01-31
JP2001085324A (ja) 2001-03-30
JP2001093795A (ja) 2001-04-06
DE10036183B4 (de) 2004-06-17

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