KR100349064B1 - 플라즈마처리장치 - Google Patents

플라즈마처리장치 Download PDF

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Publication number
KR100349064B1
KR100349064B1 KR1019940040232A KR19940040232A KR100349064B1 KR 100349064 B1 KR100349064 B1 KR 100349064B1 KR 1019940040232 A KR1019940040232 A KR 1019940040232A KR 19940040232 A KR19940040232 A KR 19940040232A KR 100349064 B1 KR100349064 B1 KR 100349064B1
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South Korea
Prior art keywords
electrode
plasma
processing
gas
magnet assembly
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Expired - Fee Related
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KR1019940040232A
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English (en)
Korean (ko)
Inventor
이마후쿠고스케
엔도쇼스케
다하라가즈히로
쓰치야히로시
도모야스마사유키
나이토유키오
나가세키가즈야
노나카료
히로세게이조
후카사와요시오
고시이시아키라
고바야시이사오
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동경 엘렉트론 주식회사
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Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
KR1019940040232A 1994-04-20 1994-12-31 플라즈마처리장치 Expired - Fee Related KR100349064B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP94-106044 1994-04-20
JP10604494 1994-04-20
JP94-234093 1994-09-01
JP23409394 1994-09-01
JP25296394 1994-09-20
JP94-252962 1994-09-20
JP25296294 1994-09-20
JP94-252963 1994-09-20

Publications (1)

Publication Number Publication Date
KR100349064B1 true KR100349064B1 (ko) 2003-01-24

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ID=27526259

Family Applications (1)

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KR1019940040232A Expired - Fee Related KR100349064B1 (ko) 1994-04-20 1994-12-31 플라즈마처리장치

Country Status (3)

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US (1) US6074518A (enExample)
KR (1) KR100349064B1 (enExample)
TW (1) TW299559B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915740B1 (ko) * 2006-10-02 2009-09-04 도쿄엘렉트론가부시키가이샤 가스 처리 장치, 처리 가스 공급 방법 및 컴퓨터 판독 가능한 기억 매체
KR101490117B1 (ko) * 2007-05-08 2015-02-05 어플라이드 머티어리얼스, 인코포레이티드 기판 세정 챔버 그리고 세정 및 컨디셔닝 방법

Families Citing this family (130)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662770A (en) 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6902683B1 (en) * 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
TW303480B (en) 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
US6471822B1 (en) * 1996-01-24 2002-10-29 Applied Materials, Inc. Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6167837B1 (en) * 1998-01-15 2001-01-02 Torrex Equipment Corp. Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor
US7004107B1 (en) * 1997-12-01 2006-02-28 Applied Materials Inc. Method and apparatus for monitoring and adjusting chamber impedance
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
US20030010453A1 (en) * 1998-03-18 2003-01-16 Jyunichi Tanaka Plasma processing apparatus and plasma processing method
US6192827B1 (en) * 1998-07-03 2001-02-27 Applied Materials, Inc. Double slit-valve doors for plasma processing
JP4066214B2 (ja) * 1998-07-24 2008-03-26 財団法人国際科学振興財団 プラズマプロセス装置
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
JP3595853B2 (ja) 1999-03-18 2004-12-02 日本エー・エス・エム株式会社 プラズマｃｖｄ成膜装置
WO2000070116A1 (en) * 1999-05-19 2000-11-23 Vosen Steven R Low pressure stagnation flow reactors with a flow barrier
US6387817B1 (en) * 1999-09-07 2002-05-14 Agere Systems Guardian Corp. Plasma confinement shield
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
JP4209057B2 (ja) * 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
JP3379506B2 (ja) * 2000-02-23 2003-02-24 松下電器産業株式会社 プラズマ処理方法及び装置
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
US6553932B2 (en) * 2000-05-12 2003-04-29 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
KR100419756B1 (ko) * 2000-06-23 2004-02-21 아넬바 가부시기가이샤 박막 형성 장치
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US7139083B2 (en) 2000-09-20 2006-11-21 Kla-Tencor Technologies Corp. Methods and systems for determining a composition and a thickness of a specimen
US6872281B1 (en) 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
AU2002211730A1 (en) * 2000-10-16 2002-04-29 Tokyo Electron Limited Plasma reactor with reduced reaction chamber
JP2002134484A (ja) * 2000-10-19 2002-05-10 Asm Japan Kk 半導体基板保持装置
TW519716B (en) * 2000-12-19 2003-02-01 Tokyo Electron Ltd Wafer bias drive for a plasma source
JP4791637B2 (ja) 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
JP3833900B2 (ja) * 2001-03-28 2006-10-18 株式会社東芝 エッチング装置およびエッチング方法
US6974523B2 (en) * 2001-05-16 2005-12-13 Lam Research Corporation Hollow anode plasma reactor and method
KR100884414B1 (ko) * 2001-05-16 2009-02-19 램 리서치 코포레이션 애노드형 플라즈마 반응기 및 방법
US6620736B2 (en) * 2001-07-24 2003-09-16 Tokyo Electron Limited Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
WO2003030239A1 (en) * 2001-09-28 2003-04-10 Sumitomo Precision Products Co., Ltd. Silicon substrate etching method and etching apparatus
US20030079688A1 (en) * 2001-10-26 2003-05-01 Walther Steven R. Methods and apparatus for plasma doping by anode pulsing
KR100442194B1 (ko) * 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
JP4847009B2 (ja) * 2002-05-23 2011-12-28 ラム リサーチ コーポレーション 半導体処理プラズマ反応器用の多部品電極および多部品電極の一部を取り換える方法
US20040028837A1 (en) * 2002-06-28 2004-02-12 Tokyo Electron Limited Method and apparatus for plasma processing
US20040112544A1 (en) * 2002-12-16 2004-06-17 Hongwen Yan Magnetic mirror for preventing wafer edge damage during dry etching
US7455748B2 (en) * 2003-06-20 2008-11-25 Lam Research Corporation Magnetic enhancement for mechanical confinement of plasma
JP4607517B2 (ja) * 2003-09-03 2011-01-05 東京エレクトロン株式会社 プラズマ処理装置
US20080087220A1 (en) * 2003-12-03 2008-04-17 Tokyo Electron Limited Plasma Processing Apparatus and Multi-Chamber System
JP4931799B2 (ja) * 2004-03-22 2012-05-16 ケーエルエー−テンカー コーポレイション 基板の特徴を測定する、または分析のために基板を準備する方法およびシステム
JP4527431B2 (ja) * 2004-04-08 2010-08-18 東京エレクトロン株式会社 プラズマ処理装置
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2007018575A2 (en) * 2004-11-12 2007-02-15 Thorrn Micro Technologies, Inc. Ion generation by the temporal control of gaseous dielectric breakdown
US7381926B2 (en) * 2005-09-09 2008-06-03 Applied Materials, Inc. Removable heater
US8200700B2 (en) * 2005-02-01 2012-06-12 Newsilike Media Group, Inc Systems and methods for use of structured and unstructured distributed data
US7148073B1 (en) 2005-03-15 2006-12-12 Kla-Tencor Technologies Corp. Methods and systems for preparing a copper containing substrate for analysis
US20060278339A1 (en) * 2005-06-13 2006-12-14 Lam Research Corporation, A Delaware Corporation Etch rate uniformity using the independent movement of electrode pieces
US7394067B1 (en) 2005-07-20 2008-07-01 Kla-Tencor Technologies Corp. Systems and methods for reducing alteration of a specimen during analysis for charged particle based and other measurement systems
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
US8789493B2 (en) * 2006-02-13 2014-07-29 Lam Research Corporation Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
US8104428B2 (en) * 2006-03-23 2012-01-31 Tokyo Electron Limited Plasma processing apparatus
US20080179288A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Process for wafer backside polymer removal and wafer front side scavenger plasma
US20080179287A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Process for wafer backside polymer removal with wafer front side gas purge
US7967996B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Process for wafer backside polymer removal and wafer front side photoresist removal
US20080179007A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Reactor for wafer backside polymer removal using plasma products in a lower process zone and purge gases in an upper process zone
US20080194112A1 (en) * 2007-02-09 2008-08-14 International Business Machines Corporation Method and system for plasma etching having improved across-wafer etch uniformity
JP5154124B2 (ja) * 2007-03-29 2013-02-27 東京エレクトロン株式会社 プラズマ処理装置
JP5514413B2 (ja) 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
KR101553423B1 (ko) * 2007-12-19 2015-09-15 램 리써치 코포레이션 반도체 진공 프로세싱 장치용 필름 점착제
US8418649B2 (en) * 2007-12-19 2013-04-16 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
TWI501704B (zh) 2008-02-08 2015-09-21 Lam Res Corp 於電漿處理系統中用以改變面積比之方法與裝置
JP5348919B2 (ja) * 2008-03-27 2013-11-20 東京エレクトロン株式会社 電極構造及び基板処理装置
US8721796B2 (en) * 2008-10-23 2014-05-13 Applied Materials, Inc. Plasma cleaning apparatus and method
CN101740298B (zh) * 2008-11-07 2012-07-25 东京毅力科创株式会社 等离子体处理装置及其构成部件
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
JP5601794B2 (ja) * 2009-05-29 2014-10-08 株式会社東芝 プラズマエッチング装置
WO2011033849A1 (ja) * 2009-09-15 2011-03-24 三菱電機株式会社 プラズマ生成装置
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
KR20110127389A (ko) * 2010-05-19 2011-11-25 삼성전자주식회사 플라즈마 처리 장치
CN105755450B (zh) 2010-12-30 2019-03-15 维易科仪器公司 使用承载器扩展的晶圆加工
CN102915902B (zh) * 2011-08-02 2015-11-25 中微半导体设备(上海)有限公司 一种电容耦合式的等离子体处理装置及其基片加工方法
US20140166618A1 (en) 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US9388493B2 (en) * 2013-01-08 2016-07-12 Veeco Instruments Inc. Self-cleaning shutter for CVD reactor
CN104103566B (zh) * 2013-04-15 2017-07-25 中微半导体设备(上海)有限公司 等离子体处理装置及其静电夹盘
US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
JP6570993B2 (ja) * 2015-12-16 2019-09-04 東京エレクトロン株式会社 プラズマ処理装置
JP6629116B2 (ja) * 2016-03-25 2020-01-15 芝浦メカトロニクス株式会社 プラズマ処理装置
TWI728197B (zh) 2016-10-24 2021-05-21 美商克萊譚克公司 整合至一計量及/或檢測工具中之製程模組
JP2019009185A (ja) * 2017-06-21 2019-01-17 東京エレクトロン株式会社 プラズマ処理装置
CN111052873B (zh) * 2017-09-06 2022-10-28 东芝三菱电机产业系统株式会社 活性气体生成装置
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US20190301012A1 (en) * 2018-04-02 2019-10-03 Veeco Instruments Inc. Wafer processing system with flow extender
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
KR102731053B1 (ko) * 2020-03-19 2024-11-15 삼성전자주식회사 기판 처리 장치
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
KR102593140B1 (ko) * 2020-12-18 2023-10-25 세메스 주식회사 지지 유닛 및 기판 처리 장치
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
FI129948B (en) * 2021-05-10 2022-11-15 Picosun Oy SUBSTRATE PROCESSING APPARATUS AND METHOD
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US12027352B2 (en) 2021-05-28 2024-07-02 Applied Materials, Inc. Apparatus for generating magnetic fields on substrates during semiconductor processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5795452A (en) * 1989-11-15 1998-08-18 Kokusai Electric Co., Ltd. Dry process system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5795452A (en) * 1989-11-15 1998-08-18 Kokusai Electric Co., Ltd. Dry process system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915740B1 (ko) * 2006-10-02 2009-09-04 도쿄엘렉트론가부시키가이샤 가스 처리 장치, 처리 가스 공급 방법 및 컴퓨터 판독 가능한 기억 매체
KR101490117B1 (ko) * 2007-05-08 2015-02-05 어플라이드 머티어리얼스, 인코포레이티드 기판 세정 챔버 그리고 세정 및 컨디셔닝 방법

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Publication number Publication date
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US6074518A (en) 2000-06-13

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