KR100338332B1 - 기재상에입자층을형성하는방법과,기재의요철면을평탄화하는방법및입자층이부설된기재 - Google Patents
기재상에입자층을형성하는방법과,기재의요철면을평탄화하는방법및입자층이부설된기재 Download PDFInfo
- Publication number
- KR100338332B1 KR100338332B1 KR1019960701917A KR19960701917A KR100338332B1 KR 100338332 B1 KR100338332 B1 KR 100338332B1 KR 1019960701917 A KR1019960701917 A KR 1019960701917A KR 19960701917 A KR19960701917 A KR 19960701917A KR 100338332 B1 KR100338332 B1 KR 100338332B1
- Authority
- KR
- South Korea
- Prior art keywords
- particle layer
- substrate
- dispersion
- liquid
- dispersion medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 title claims abstract description 200
- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000001788 irregular Effects 0.000 title 1
- 239000007788 liquid Substances 0.000 claims abstract description 54
- 239000006185 dispersion Substances 0.000 claims abstract description 51
- 239000002612 dispersion medium Substances 0.000 claims abstract description 47
- 239000007787 solid Substances 0.000 claims abstract description 38
- 239000011230 binding agent Substances 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 230000005484 gravity Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 39
- 239000010410 layer Substances 0.000 description 112
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 43
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 27
- 239000002904 solvent Substances 0.000 description 23
- 239000000377 silicon dioxide Substances 0.000 description 19
- 239000011521 glass Substances 0.000 description 17
- 238000002834 transmittance Methods 0.000 description 16
- 239000005340 laminated glass Substances 0.000 description 14
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 239000002356 single layer Substances 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- 238000004381 surface treatment Methods 0.000 description 8
- 239000004816 latex Substances 0.000 description 6
- 229920000126 latex Polymers 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229920001709 polysilazane Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- LGCMKPRGGJRYGM-UHFFFAOYSA-N Osalmid Chemical compound C1=CC(O)=CC=C1NC(=O)C1=CC=CC=C1O LGCMKPRGGJRYGM-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- -1 diketone compound Chemical class 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- CEGOLXSVJUTHNZ-UHFFFAOYSA-K aluminium tristearate Chemical compound [Al+3].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CEGOLXSVJUTHNZ-UHFFFAOYSA-K 0.000 description 1
- 229940063655 aluminum stearate Drugs 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000002635 aromatic organic solvent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- VAROLYSFQDGFMV-UHFFFAOYSA-K di(octanoyloxy)alumanyl octanoate Chemical compound [Al+3].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O.CCCCCCCC([O-])=O VAROLYSFQDGFMV-UHFFFAOYSA-K 0.000 description 1
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- HLXDKGBELJJMHR-UHFFFAOYSA-N methyl-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](C)(OC(C)C)OC(C)C HLXDKGBELJJMHR-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- CZFVBIJYVFABOJ-UHFFFAOYSA-N tetraoctylsilane Chemical compound CCCCCCCC[Si](CCCCCCCC)(CCCCCCCC)CCCCCCCC CZFVBIJYVFABOJ-UHFFFAOYSA-N 0.000 description 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- GYZQBXUDWTVJDF-UHFFFAOYSA-N tributoxy(methyl)silane Chemical compound CCCCO[Si](C)(OCCCC)OCCCC GYZQBXUDWTVJDF-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
- B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y10T428/24372—Particulate matter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24893—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Laminated Bodies (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1994-213148 | 1994-08-15 | ||
| JP21314894A JP3280804B2 (ja) | 1994-08-15 | 1994-08-15 | 基材上への粒子層の形成方法、基材凹凸面の平坦化方法および粒子層付基材 |
| PCT/JP1995/001610 WO1996004998A1 (en) | 1994-08-15 | 1995-08-11 | Method for forming particle layer on substrate, method for flattening irregular substrate surface, and particle-layered substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960704643A KR960704643A (ko) | 1996-10-09 |
| KR100338332B1 true KR100338332B1 (ko) | 2002-07-18 |
Family
ID=16634375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960701917A Expired - Lifetime KR100338332B1 (ko) | 1994-08-15 | 1995-08-11 | 기재상에입자층을형성하는방법과,기재의요철면을평탄화하는방법및입자층이부설된기재 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6090446A (https=) |
| EP (1) | EP0728531B1 (https=) |
| JP (1) | JP3280804B2 (https=) |
| KR (1) | KR100338332B1 (https=) |
| AT (1) | ATE189978T1 (https=) |
| DE (1) | DE69515289T2 (https=) |
| TW (1) | TW311106B (https=) |
| WO (1) | WO1996004998A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160090252A (ko) | 2015-01-21 | 2016-07-29 | 코닝정밀소재 주식회사 | 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자 |
| KR20170110767A (ko) | 2016-03-23 | 2017-10-12 | 코닝 인코포레이티드 | 유기발광소자용 광추출 기판, 그 제조방법 및 이를 포함하는 유기발광소자 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10314700A1 (de) * | 2003-03-31 | 2004-10-14 | Behr Gmbh & Co. Kg | Verfahren zur Herstellung oberflächenmodifizierter Werkstücke |
| DE102004049107A1 (de) * | 2004-10-07 | 2006-04-13 | Behr Gmbh & Co. Kg | Beschichtungsverfahren |
| DE102005039517A1 (de) * | 2005-08-20 | 2007-02-22 | Carl Zeiss Smt Ag | Phasenverzögerungselement und Verfahren zur Herstellung eines Phasenverzögerungselementes |
| US8425985B2 (en) | 2008-08-22 | 2013-04-23 | Corning Incorporated | Method for particulate coating |
| FR2941159B1 (fr) * | 2009-01-19 | 2012-02-24 | Commissariat Energie Atomique | Procede de depot d'un materiau a la surface d'un objet. |
| TWI421209B (zh) * | 2010-08-12 | 2014-01-01 | Academia Sinica | 大面積單層微粒膜及其製備方法 |
| US9153451B2 (en) | 2012-12-12 | 2015-10-06 | Micron Technology, Inc. | Method of forming a planar surface for a semiconductor device structure, and related methods of forming a semiconductor device structure |
| CN105683116A (zh) * | 2013-08-30 | 2016-06-15 | 康宁股份有限公司 | 低反射率制品及其制造方法 |
| CN106103370B (zh) | 2014-03-21 | 2020-05-01 | 康宁股份有限公司 | 具有图案化涂层的制品 |
| KR101699275B1 (ko) | 2014-09-11 | 2017-01-25 | 코닝정밀소재 주식회사 | 유기발광소자용 광추출 기판, 그 제조방법 및 이를 포함하는 유기발광소자 |
| FR3031683B1 (fr) * | 2015-01-16 | 2017-02-17 | Commissariat Energie Atomique | Procede de formation d'un film compact de particules a la surface d'un liquide porteur |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2633426A (en) * | 1950-07-07 | 1953-03-31 | Gen Electric | Method of forming a powder coating on a surface |
| US4051275A (en) * | 1974-06-21 | 1977-09-27 | Forestek Clarence W | Embedding and compacting particles in porous surfaces |
| JPH0611794B2 (ja) * | 1985-04-01 | 1994-02-16 | 新技術開発事業団 | 高分子超微粒子とその複合体 |
| JPH0642043B2 (ja) * | 1986-04-10 | 1994-06-01 | 富士写真フイルム株式会社 | 固体粒子膜の形成方法 |
| US4801476A (en) * | 1986-09-24 | 1989-01-31 | Exxon Research And Engineering Company | Method for production of large area 2-dimensional arrays of close packed colloidal particles |
| JPH02307571A (ja) * | 1989-05-19 | 1990-12-20 | Fuji Photo Film Co Ltd | 固体粒子膜の形成方法 |
| JPH03157162A (ja) * | 1989-11-15 | 1991-07-05 | Hitachi Ltd | 有機薄膜の作製方法 |
| JP2885587B2 (ja) * | 1992-10-28 | 1999-04-26 | 科学技術振興事業団 | ２次元粒子薄膜製造方法 |
-
1994
- 1994-08-15 JP JP21314894A patent/JP3280804B2/ja not_active Expired - Lifetime
-
1995
- 1995-08-11 WO PCT/JP1995/001610 patent/WO1996004998A1/ja not_active Ceased
- 1995-08-11 KR KR1019960701917A patent/KR100338332B1/ko not_active Expired - Lifetime
- 1995-08-11 DE DE69515289T patent/DE69515289T2/de not_active Expired - Lifetime
- 1995-08-11 US US08/624,537 patent/US6090446A/en not_active Expired - Lifetime
- 1995-08-11 AT AT95928022T patent/ATE189978T1/de active
- 1995-08-11 EP EP95928022A patent/EP0728531B1/en not_active Expired - Lifetime
- 1995-09-12 TW TW084109497A patent/TW311106B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160090252A (ko) | 2015-01-21 | 2016-07-29 | 코닝정밀소재 주식회사 | 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자 |
| KR20170110767A (ko) | 2016-03-23 | 2017-10-12 | 코닝 인코포레이티드 | 유기발광소자용 광추출 기판, 그 제조방법 및 이를 포함하는 유기발광소자 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1996004998A1 (en) | 1996-02-22 |
| US6090446A (en) | 2000-07-18 |
| ATE189978T1 (de) | 2000-03-15 |
| TW311106B (https=) | 1997-07-21 |
| EP0728531B1 (en) | 2000-03-01 |
| JPH0857295A (ja) | 1996-03-05 |
| DE69515289T2 (de) | 2000-11-30 |
| KR960704643A (ko) | 1996-10-09 |
| DE69515289D1 (de) | 2000-04-06 |
| JP3280804B2 (ja) | 2002-05-13 |
| EP0728531A4 (en) | 1996-10-16 |
| EP0728531A1 (en) | 1996-08-28 |
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