KR100322288B1 - 고체억제기 - Google Patents

고체억제기 Download PDF

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Publication number
KR100322288B1
KR100322288B1 KR1019930013107A KR930013107A KR100322288B1 KR 100322288 B1 KR100322288 B1 KR 100322288B1 KR 1019930013107 A KR1019930013107 A KR 1019930013107A KR 930013107 A KR930013107 A KR 930013107A KR 100322288 B1 KR100322288 B1 KR 100322288B1
Authority
KR
South Korea
Prior art keywords
conductive material
substrate
forming
region
suppressor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930013107A
Other languages
English (en)
Korean (ko)
Other versions
KR940006282A (ko
Inventor
스테픈더블유.비아트
Original Assignee
파워 이노베이션즈 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 파워 이노베이션즈 리미티드 filed Critical 파워 이노베이션즈 리미티드
Publication of KR940006282A publication Critical patent/KR940006282A/ko
Application granted granted Critical
Publication of KR100322288B1 publication Critical patent/KR100322288B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Thyristors (AREA)
KR1019930013107A 1992-07-15 1993-07-13 고체억제기 Expired - Fee Related KR100322288B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9215017.6 1992-07-15
GB929215017A GB9215017D0 (en) 1992-07-15 1992-07-15 Solid state suppressor

Publications (2)

Publication Number Publication Date
KR940006282A KR940006282A (ko) 1994-03-23
KR100322288B1 true KR100322288B1 (ko) 2002-07-27

Family

ID=10718739

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930013107A Expired - Fee Related KR100322288B1 (ko) 1992-07-15 1993-07-13 고체억제기

Country Status (6)

Country Link
US (1) US5429953A (enExample)
EP (1) EP0579502A2 (enExample)
JP (1) JP3352160B2 (enExample)
KR (1) KR100322288B1 (enExample)
CA (1) CA2098967A1 (enExample)
GB (1) GB9215017D0 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2709872B1 (fr) * 1993-09-07 1995-11-24 Sgs Thomson Microelectronics Diode de shockley bidirectionnelle.
US5734207A (en) * 1994-05-06 1998-03-31 Miklinjul Corporation Voltage polarity memory system and fuse-switch assembly usable therewith
EP0926740A3 (en) * 1997-12-23 1999-08-25 National University of Ireland, Cork A transient voltage suppressor
JP3141869B2 (ja) 1999-02-15 2001-03-07 日本電気株式会社 液晶モジュールの取付構造およびこれを搭載する携帯用情報端末機器
US6531717B1 (en) 1999-03-01 2003-03-11 Teccor Electronics, L.P. Very low voltage actuated thyristor with centrally-located offset buried region
US6084253A (en) * 1999-03-01 2000-07-04 Teccor Electronics, Lp Low voltage four-layer device with offset buried region
US6956248B2 (en) 1999-03-01 2005-10-18 Teccor Electronics, Lp Semiconductor device for low voltage protection with low capacitance
DE10344592B4 (de) * 2003-09-25 2006-01-12 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren zum Einstellen der Durchbruchspannung eines Thyristors mit einer Durchbruchsstruktur
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
CN105720108A (zh) * 2016-03-25 2016-06-29 昆山海芯电子科技有限公司 低电容低电压半导体过压保护器件
CN106783949A (zh) * 2016-12-19 2017-05-31 东莞市阿甘半导体有限公司 单向tvs结构及其制造方法
CN108538722A (zh) * 2018-04-03 2018-09-14 苏州德森瑞芯半导体科技有限公司 放电管生产方法
CN114429946A (zh) * 2022-01-21 2022-05-03 吉林华微电子股份有限公司 一种放电管及放电管制作方法
CN118412279A (zh) * 2023-01-30 2024-07-30 力特半导体（无锡）有限公司 用于半导体器件制造的通态峰值电压降低的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61158179A (ja) * 1984-12-28 1986-07-17 Toshiba Corp 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54887A (en) * 1977-06-03 1979-01-06 Mitsubishi Electric Corp Two-way thyristor
JPS55124262A (en) * 1979-03-16 1980-09-25 Mitsubishi Electric Corp Bidirectional thyristor
JPS5676568A (en) * 1979-11-27 1981-06-24 Mitsubishi Electric Corp Manufacture of thyristor
JPS57196569A (en) * 1981-05-27 1982-12-02 Toshiba Corp Bidirectional thyristor
US4797720A (en) * 1981-07-29 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Controlled breakover bidirectional semiconductor switch
JPS6263472A (ja) * 1985-09-13 1987-03-20 Sharp Corp パワ−ｍｏｓ−ｆｅｔ
EP0262485A1 (de) * 1986-10-01 1988-04-06 BBC Brown Boveri AG Halbleiterbauelement mit einer Ätzgrube
CA1238115A (en) * 1986-10-29 1988-06-14 Jerzy Borkowicz Bi-directional overvoltage protection device
GB2208257B (en) * 1987-07-16 1990-11-21 Texas Instruments Ltd Overvoltage protector
EP0394859A1 (de) * 1989-04-28 1990-10-31 Asea Brown Boveri Ag Bidirektionals, abschaltbares Halbeiterbauelement

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61158179A (ja) * 1984-12-28 1986-07-17 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
GB9215017D0 (en) 1992-08-26
EP0579502A2 (en) 1994-01-19
JP3352160B2 (ja) 2002-12-03
US5429953A (en) 1995-07-04
JPH06163886A (ja) 1994-06-10
KR940006282A (ko) 1994-03-23
EP0579502A3 (enExample) 1994-03-30
CA2098967A1 (en) 1994-01-16

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