CA2098967A1 - Solid state suppressors - Google Patents

Solid state suppressors

Info

Publication number
CA2098967A1
CA2098967A1 CA002098967A CA2098967A CA2098967A1 CA 2098967 A1 CA2098967 A1 CA 2098967A1 CA 002098967 A CA002098967 A CA 002098967A CA 2098967 A CA2098967 A CA 2098967A CA 2098967 A1 CA2098967 A1 CA 2098967A1
Authority
CA
Canada
Prior art keywords
substrate
conductivity type
suppressor
forming
transient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002098967A
Other languages
English (en)
French (fr)
Inventor
Stephen W. Byatt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Innovations Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2098967A1 publication Critical patent/CA2098967A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Thyristors (AREA)
CA002098967A 1992-07-15 1993-06-22 Solid state suppressors Abandoned CA2098967A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB92.15017.6 1992-07-15
GB929215017A GB9215017D0 (en) 1992-07-15 1992-07-15 Solid state suppressor

Publications (1)

Publication Number Publication Date
CA2098967A1 true CA2098967A1 (en) 1994-01-16

Family

ID=10718739

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002098967A Abandoned CA2098967A1 (en) 1992-07-15 1993-06-22 Solid state suppressors

Country Status (6)

Country Link
US (1) US5429953A (enExample)
EP (1) EP0579502A2 (enExample)
JP (1) JP3352160B2 (enExample)
KR (1) KR100322288B1 (enExample)
CA (1) CA2098967A1 (enExample)
GB (1) GB9215017D0 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2709872B1 (fr) * 1993-09-07 1995-11-24 Sgs Thomson Microelectronics Diode de shockley bidirectionnelle.
US5734207A (en) * 1994-05-06 1998-03-31 Miklinjul Corporation Voltage polarity memory system and fuse-switch assembly usable therewith
EP0926740A3 (en) * 1997-12-23 1999-08-25 National University of Ireland, Cork A transient voltage suppressor
JP3141869B2 (ja) 1999-02-15 2001-03-07 日本電気株式会社 液晶モジュールの取付構造およびこれを搭載する携帯用情報端末機器
US6531717B1 (en) 1999-03-01 2003-03-11 Teccor Electronics, L.P. Very low voltage actuated thyristor with centrally-located offset buried region
US6956248B2 (en) 1999-03-01 2005-10-18 Teccor Electronics, Lp Semiconductor device for low voltage protection with low capacitance
US6084253A (en) * 1999-03-01 2000-07-04 Teccor Electronics, Lp Low voltage four-layer device with offset buried region
DE10344592B4 (de) * 2003-09-25 2006-01-12 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren zum Einstellen der Durchbruchspannung eines Thyristors mit einer Durchbruchsstruktur
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
CN105720108A (zh) * 2016-03-25 2016-06-29 昆山海芯电子科技有限公司 低电容低电压半导体过压保护器件
CN106783949A (zh) * 2016-12-19 2017-05-31 东莞市阿甘半导体有限公司 单向tvs结构及其制造方法
CN108538722A (zh) * 2018-04-03 2018-09-14 苏州德森瑞芯半导体科技有限公司 放电管生产方法
CN114429946A (zh) * 2022-01-21 2022-05-03 吉林华微电子股份有限公司 一种放电管及放电管制作方法
CN118412279A (zh) * 2023-01-30 2024-07-30 力特半导体（无锡）有限公司 用于半导体器件制造的通态峰值电压降低的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54887A (en) * 1977-06-03 1979-01-06 Mitsubishi Electric Corp Two-way thyristor
JPS55124262A (en) * 1979-03-16 1980-09-25 Mitsubishi Electric Corp Bidirectional thyristor
JPS5676568A (en) * 1979-11-27 1981-06-24 Mitsubishi Electric Corp Manufacture of thyristor
JPS57196569A (en) * 1981-05-27 1982-12-02 Toshiba Corp Bidirectional thyristor
US4797720A (en) * 1981-07-29 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Controlled breakover bidirectional semiconductor switch
JP2510972B2 (ja) * 1984-12-28 1996-06-26 株式会社東芝 双方向サイリスタ
JPS6263472A (ja) * 1985-09-13 1987-03-20 Sharp Corp パワ−ｍｏｓ−ｆｅｔ
EP0262485A1 (de) * 1986-10-01 1988-04-06 BBC Brown Boveri AG Halbleiterbauelement mit einer Ätzgrube
CA1238115A (en) * 1986-10-29 1988-06-14 Jerzy Borkowicz Bi-directional overvoltage protection device
GB2208257B (en) * 1987-07-16 1990-11-21 Texas Instruments Ltd Overvoltage protector
EP0394859A1 (de) * 1989-04-28 1990-10-31 Asea Brown Boveri Ag Bidirektionals, abschaltbares Halbeiterbauelement

Also Published As

Publication number Publication date
JP3352160B2 (ja) 2002-12-03
JPH06163886A (ja) 1994-06-10
KR940006282A (ko) 1994-03-23
GB9215017D0 (en) 1992-08-26
EP0579502A2 (en) 1994-01-19
EP0579502A3 (enExample) 1994-03-30
KR100322288B1 (ko) 2002-07-27
US5429953A (en) 1995-07-04

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued