JP3352160B2 - 固体サプレッサ - Google Patents
固体サプレッサInfo
- Publication number
- JP3352160B2 JP3352160B2 JP17424593A JP17424593A JP3352160B2 JP 3352160 B2 JP3352160 B2 JP 3352160B2 JP 17424593 A JP17424593 A JP 17424593A JP 17424593 A JP17424593 A JP 17424593A JP 3352160 B2 JP3352160 B2 JP 3352160B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- suppressor
- diffusion region
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB92150176 | 1992-07-15 | ||
| GB929215017A GB9215017D0 (en) | 1992-07-15 | 1992-07-15 | Solid state suppressor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06163886A JPH06163886A (ja) | 1994-06-10 |
| JP3352160B2 true JP3352160B2 (ja) | 2002-12-03 |
Family
ID=10718739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17424593A Expired - Fee Related JP3352160B2 (ja) | 1992-07-15 | 1993-07-14 | 固体サプレッサ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5429953A (enExample) |
| EP (1) | EP0579502A2 (enExample) |
| JP (1) | JP3352160B2 (enExample) |
| KR (1) | KR100322288B1 (enExample) |
| CA (1) | CA2098967A1 (enExample) |
| GB (1) | GB9215017D0 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2709872B1 (fr) * | 1993-09-07 | 1995-11-24 | Sgs Thomson Microelectronics | Diode de shockley bidirectionnelle. |
| US5734207A (en) * | 1994-05-06 | 1998-03-31 | Miklinjul Corporation | Voltage polarity memory system and fuse-switch assembly usable therewith |
| EP0926740A3 (en) * | 1997-12-23 | 1999-08-25 | National University of Ireland, Cork | A transient voltage suppressor |
| JP3141869B2 (ja) | 1999-02-15 | 2001-03-07 | 日本電気株式会社 | 液晶モジュールの取付構造およびこれを搭載する携帯用情報端末機器 |
| US6531717B1 (en) | 1999-03-01 | 2003-03-11 | Teccor Electronics, L.P. | Very low voltage actuated thyristor with centrally-located offset buried region |
| US6956248B2 (en) | 1999-03-01 | 2005-10-18 | Teccor Electronics, Lp | Semiconductor device for low voltage protection with low capacitance |
| US6084253A (en) * | 1999-03-01 | 2000-07-04 | Teccor Electronics, Lp | Low voltage four-layer device with offset buried region |
| DE10344592B4 (de) * | 2003-09-25 | 2006-01-12 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Verfahren zum Einstellen der Durchbruchspannung eines Thyristors mit einer Durchbruchsstruktur |
| FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
| CN105720108A (zh) * | 2016-03-25 | 2016-06-29 | 昆山海芯电子科技有限公司 | 低电容低电压半导体过压保护器件 |
| CN106783949A (zh) * | 2016-12-19 | 2017-05-31 | 东莞市阿甘半导体有限公司 | 单向tvs结构及其制造方法 |
| CN108538722A (zh) * | 2018-04-03 | 2018-09-14 | 苏州德森瑞芯半导体科技有限公司 | 放电管生产方法 |
| CN114429946A (zh) * | 2022-01-21 | 2022-05-03 | 吉林华微电子股份有限公司 | 一种放电管及放电管制作方法 |
| CN118412279A (zh) * | 2023-01-30 | 2024-07-30 | 力特半导体（无锡）有限公司 | 用于半导体器件制造的通态峰值电压降低的方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54887A (en) * | 1977-06-03 | 1979-01-06 | Mitsubishi Electric Corp | Two-way thyristor |
| JPS55124262A (en) * | 1979-03-16 | 1980-09-25 | Mitsubishi Electric Corp | Bidirectional thyristor |
| JPS5676568A (en) * | 1979-11-27 | 1981-06-24 | Mitsubishi Electric Corp | Manufacture of thyristor |
| JPS57196569A (en) * | 1981-05-27 | 1982-12-02 | Toshiba Corp | Bidirectional thyristor |
| US4797720A (en) * | 1981-07-29 | 1989-01-10 | American Telephone And Telegraph Company, At&T Bell Laboratories | Controlled breakover bidirectional semiconductor switch |
| JP2510972B2 (ja) * | 1984-12-28 | 1996-06-26 | 株式会社東芝 | 双方向サイリスタ |
| JPS6263472A (ja) * | 1985-09-13 | 1987-03-20 | Sharp Corp | パワ−ｍｏｓ−ｆｅｔ |
| EP0262485A1 (de) * | 1986-10-01 | 1988-04-06 | BBC Brown Boveri AG | Halbleiterbauelement mit einer Ätzgrube |
| CA1238115A (en) * | 1986-10-29 | 1988-06-14 | Jerzy Borkowicz | Bi-directional overvoltage protection device |
| GB2208257B (en) * | 1987-07-16 | 1990-11-21 | Texas Instruments Ltd | Overvoltage protector |
| EP0394859A1 (de) * | 1989-04-28 | 1990-10-31 | Asea Brown Boveri Ag | Bidirektionals, abschaltbares Halbeiterbauelement |
-
1992
- 1992-07-15 GB GB929215017A patent/GB9215017D0/en active Pending
-
1993
- 1993-06-11 US US08/075,656 patent/US5429953A/en not_active Expired - Fee Related
- 1993-06-22 CA CA002098967A patent/CA2098967A1/en not_active Abandoned
- 1993-07-13 KR KR1019930013107A patent/KR100322288B1/ko not_active Expired - Fee Related
- 1993-07-14 JP JP17424593A patent/JP3352160B2/ja not_active Expired - Fee Related
- 1993-07-15 EP EP93305581A patent/EP0579502A2/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06163886A (ja) | 1994-06-10 |
| KR940006282A (ko) | 1994-03-23 |
| GB9215017D0 (en) | 1992-08-26 |
| EP0579502A2 (en) | 1994-01-19 |
| CA2098967A1 (en) | 1994-01-16 |
| EP0579502A3 (enExample) | 1994-03-30 |
| KR100322288B1 (ko) | 2002-07-27 |
| US5429953A (en) | 1995-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |